75N10 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 75N10
- DESCRIPTION
- Drain Current I D= 75A@ TC=25℃
- Drain Source Voltage- : V DSS= 100V(Min)
- Fast Switching Speed
- APPLICATIONS
- General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 75 A ID(puls) Pulse Drain Current 200 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
- THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.62 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 80 ℃/W PDF pdfFactory Pro www.fineprint.cn
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 75N10
- ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 100 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V VSD Diode Forward On-Voltage IS=75A ;VGS= 0 1.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=40A 0.011 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=80V; VGS= 0 200 µA tr Rise Time VGS=10V; ID=37.5A; VDD=40V; RL=50Ω 110 ns td(on) Turn-on Delay Time 90 tf Fall Time 95 td(off) Turn-off Delay Time 200 PDF pdfFactory Pro www.fineprint.cn