75N06_17 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor 75N06
- DESCRIPTION
- Highcurrentcapability
- DrainSource Voltage- :VDSS=60V(Min)
- FastSwitching Speed
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation
- APPLICATIONS
- Regulator
- Highcurrent,highspeed switching
- Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-SourceVoltage(VGS=0) 60 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-continuous@TC=25℃ 75 A ID(puls) PulseDrainCurrent 300 A Ptot TotalDissipation@TC=25℃ 150 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.67 ℃/W Rthj-a ThermalResistance,JunctiontoAmbient 62.5 ℃/W
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor 75N06
- ELECTRICALCHARACTERISTICS(TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0;ID=0.25mA 60 V VGS(th) GateThresholdVoltage VDS=VGS; ID=1mA 2.0 4.0 V VSD DiodeForwardOn-Voltage IS=75A;VGS=0 1.6 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=40A 0.014 Ω IGSS Gate-BodyLeakageCurrent VGS= ±20V;VDS=0 ±100 nA IDSS ZeroGateVoltageDrainCurrent VDS=60V;VGS=0 250 µA tr RiseTime VGS=10V;ID=40A; VDD=25V;RG=50Ω 270 ns td(on) Turn-onDelayTime 1300