74LV132_09 NXP
Document overview
- PDF pages: 17
Technical content
Page 1
1. General description
The 74LV132 is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC132 and 74HCT132.
The 74LV132 contains four 2-input NAND gates which accept standard input signals. They are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.
The gate switches at different points for positive and negative-going signals. The difference between the positive voltage VT+ and the negative voltage VT− is defined as the input hysteresis voltage VH.
2. Features
I Wide operating voltage: 1.0 V to 5.5 V I Optimized for low voltage applications: 1.0 V to 3.6 V I Accepts TTL input levels between VCC = 2.7 V and VCC = 3.6 V I Typical output ground bounce < 0.8 V at VCC = 3.3 V and Tamb = 25 °C I Typical HIGH-level output voltage (VOH) undershoot: > 2 V at VCC = 3.3 V and Tamb = 25 °C I ESD protection: N HBM JESD22-A114E exceeds 2000 V N MM JESD22-A115-A exceeds 200 V I Multiple package options I Specified from −40 °C to +85 °C and from −40 °C to +125 °C
3. Applications
I Wave and pulse shapers for highly noisy environments I Astable multivibrators I Monostable multivibrators

Page 2
4. Ordering information
Table 1. Ordering information
| Type number | Package | |||
|---|---|---|---|---|
| Temperature range | Name | Description | Version | |
74LV132N
−40 °C to +125 °C DIP14
74LV132D
−40 °C to +125 °C SO14
74LV132DB
−40 °C to +125 °C SSOP14
plastic dual in-line package; 14 leads (300 mil)
SOT27-1
plastic small outline package; 14 leads;
SOT108-1
body width 3.9 mm plastic shrink small outline package; 14 leads;
SOT337-1
body width 5.3 mm
−40 °C to +125 °C TSSOP14 plastic thin shrink small outline package; 14 leads;
74LV132PW
SOT402-1
body width 4.4 mm
−40 °C to +125 °C DHVQFN14 plastic dual in-line compatible thermal enhanced very
SOT762-1
74LV132BQ
thin quad flat package; no leads; 14 terminals; body 2.5 × 3 × 0.85 mm
5. Functional diagram

2 of 17
Page 3
6. Pinning information
6.1 Pinning

6.2 Pin description
Table 2. Pin description Symbol
Pin
Description
1A
1
data input
1B
2
data input
1Y
3
data output
2A
4
data input
2B
5
data input
2Y
6
data output
GND
7
ground (0 V)
3Y
8
data output
3A
9
data input
3B
10
data input
4Y
11
data output
4A
12
data input
4B
13
data input
14
supply voltage
VCC
3 of 17
Page 4
7. Functional description
Table 3. Function table H = HIGH voltage level; L = LOW voltage level.
| Input | Output | |
| nA | nB | nY |
L
L
H
L
H
H
H
L
H
H
H
L
8. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol
Parameter
Conditions
Min Max Unit
supply voltage
−0.5 +7.0 V
VCC
[1] -
VI < −0.5 V or VI > VCC + 0.5 V
input clamping current
±20 mA
IIK
[1] -
VO < −0.5 V or VO > VCC + 0.5 V
output clamping current
±50 mA
IOK
VO = −0.5 V to (VCC + 0.5 V)
output current
- ±25 mA
IO
supply current
- 50 mA
ICC
ground current
−50 - mA
IGND
storage temperature
−65 +150 °C
Tstg
total power dissipation
Tamb = −40 °C to +125 °C
Ptot
[2] -
750 mW
DIP14 package
[3] -
500 mW
SO14 package
[4] -
500 mW
(T)SSOP14 package
[5] -
500 mW
DHVQFN14 package
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] Ptot derates linearly with 12 mW/K above 70 °C. [3] Ptot derates linearly with 8 mW/K above 70 °C. [4] Ptot derates linearly with 5.5 mW/K above 60 °C. [5] Ptot derates linearly with 4.5 mW/K above 60 °C.
4 of 17
Page 5
9. Recommended operating conditions
Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol
Parameter
Conditions
Min Typ Max Unit
supply voltage[1]
1.0
3.3
5.5
V
VCC
input voltage
0
-
VCC V
VI
output voltage
0
-
VCC V
VO
ambient temperature
−40
+25
+125 °C
Tamb
[1] The static characteristics are guaranteed from VCC = 1.2 V to VCC = 5.5 V, but LV devices are guaranteed to function down to VCC = 1.0 V (with input levels GND or VCC).
10. Static characteristics
Table 6. Static characteristics Voltages are referenced to GND (ground = 0 V).
| Symbol | Parameter | Conditions | −40 °C to +85 °C | −40 °C to +125 °C | Unit | |||
|---|---|---|---|---|---|---|---|---|
| Min | Typ[1] | Max | Min | Max | ||||
HIGH-level output voltage
VI = VT+ or VT−
VOH
lO = −100 µA; VCC = 1.2 V
- 1.2 - - - V
lO = −100 µA; VCC = 2.0 V
1.8 2.0 - 1.8 - V
lO = −100 µA; VCC = 2.7 V
2.5 2.7 - 2.5 - V
lO = −100 µA; VCC = 3.0 V
2.8 3.0 - 2.8 - V
lO = −100 µA; VCC = 4.5 V
4.3 4.5 - 4.3 - V
lO = −6 mA; VCC = 3.0 V
2.4 2.82 - 2.2 - V
lO = −12 mA; VCC = 4.5 V
3.6 4.2 - 3.5 - V
LOW-level output voltage
VI = VT+ or VT−
VOL
IO = 100 µA; VCC = 1.2 V
- 0 - - - V
IO = 100 µA; VCC = 2.0 V
- 0 0.2 - 0.2 V
IO = 100 µA; VCC = 2.7 V
- 0 0.2 - 0.2 V
IO = 100 µA; VCC = 3.0 V
- 0 0.2 - 0.2 V
IO = 100 µA; VCC = 4.5 V
- 0 0.2 - 0.2 V
IO = 6 mA; VCC = 3.0 V
- 0.25 0.40
- 0.50 V
IO = 12 mA; VCC = 4.5 V
- 0.35 0.55
- 0.65 V
input leakage current
VI = VCC or GND;
- - 1.0 - 1.0 µA
II
VCC = 5.5 V
supply current
VI = VCC or GND; IO = 0 A;
- - 20.0 - 40 µA
ICC
VCC = 5.5 V
additional supply current
per input; VI = VCC − 0.6 V;
- - 500 - 850 µA
∆ICC
VCC = 2.7 V to 3.6 V
input capacitance
- 3.5 - - - pF
CI
[1] Typical values are measured at Tamb = 25 °C.
5 of 17
Page 6
11. Dynamic characteristics
Table 7. Dynamic characteristics GND = 0 V; For test circuit see Figure 7.
| Symbol | Parameter | Conditions | −40 °C to +85 °C | −40 °C to +125 °C | Unit | |||
|---|---|---|---|---|---|---|---|---|
| Min | Typ[1] | Max | Min | Max | ||||
[2]
propagation delay nA, nB to nY; see Figure 6 tpd
VCC = 1.2 V
- 65 - - - ns
VCC = 2.0 V
- 18 34 - 43 ns
VCC = 2.7 V
- 15 24 - 30 ns
[3]
VCC = 3.0 V to 3.6 V; CL = 15 pF
- 10 - - - ns
[3]
VCC = 3.0 V to 3.6 V
- 12 20 - 25 ns
[3]
VCC = 4.5 V to 5.5 V
- 9.0 14 - 17 ns
[4]
power dissipation
CL = 50 pF; fi = 1 MHz;
- 24 - - - pF
CPD capacitance
VI = GND to VCC
[1] All typical values are measured at Tamb = 25 °C. [2] tpd is the same as tPLH and tPHL. [3] Typical values are measured at nominal supply voltage (VCC = 3.3 V and VCC = 5.0 V). [4] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz, fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in V N = number of inputs switching Σ(CL × VCC2 × fo) = sum of the outputs.
12. Waveforms

6 of 17
Page 7
Table 8. Measurement points Supply voltage
Input
Output
VCC
VM
VM
< 2.7 V
0.5VCC
0.5VCC
2.7 V to 3.6 V
1.5 V
1.5 V 0.5VCC
≥ 4.5 V
0.5VCC

Table 9. Test data
| Supply voltage V CC | Input | |
| V I | t, t r f | |
< 2.7 V
VCC
≤ 2.5 ns
2.7 V to 3.6 V
2.7 V
≤ 2.5 ns ≤ 2.5 ns
≥ 4.5 V
VCC
13. Transfer characteristics
Table 10. Transfer characteristics GND = 0 V; For test circuit see Figure 7.
| Symbol | Parameter | Conditions | −40 °C to +85 °C | −40 °C to +125 °C | Unit | |||
|---|---|---|---|---|---|---|---|---|
| Min | Typ[1] | Max | Min | Max | ||||
positive-going
see Figure 6
VT+ threshold voltage
VCC = 1.2 V
- 0.70 - - - V
VCC = 2.0 V
0.8 1.10 1.4 0.8 1.4 V
VCC = 2.7 V
1.0 1.45 2.0 1.0 2.0 V
VCC = 3.0 V
1.2 1.60 2.2 1.2 2.2 V
VCC = 3.6 V
1.5 1.95 2.4 1.5 2.4 V
VCC = 4.5 V
1.7 2.50 3.2 1.7 3.2 V
VCC = 5.5 V
2.1 3.00 3.9 2.1 3.9 V
7 of 17
Page 8
Table 10. Transfer characteristics …continued GND = 0 V; For test circuit see Figure 7.
| Symbol | Parameter | Conditions | −40 °C to +85 °C | −40 °C to +125 °C | Unit | |||
|---|---|---|---|---|---|---|---|---|
| Min | Typ[1] | Max | Min | Max | ||||
VT− negative-going
see Figure 6
threshold voltage
VCC = 1.2 V
- 0.34 - - - V
VCC = 2.0 V
0.3 0.65 0.9 0.3 0.9 V
VCC = 2.7 V
0.4 0.90 1.4 0.4 1.4 V
VCC = 3.0 V
0.6 1.05 1.5 0.6 1.5 V
VCC = 3.6 V
0.8 1.30 1.8 0.8 1.8 V
VCC = 4.5 V
0.9 1.60 2.0 0.9 2.0 V
VCC = 5.5 V
1.2 2.00 2.6 1.2 2.6 V
hysteresis voltage
(VT+ − VT−); see Figure 6
VH
VCC = 1.2 V
- 0.3 - - - V
VCC = 2.0 V
0.2 0.55 0.8 0.2 0.8 V
VCC = 2.7 V
0.3 0.60 1.1 0.3 1.1 V
VCC = 3.0 V
0.4 0.65 1.2 0.4 1.2 V
VCC = 3.6 V
0.4 0.70 1.2 0.4 1.2 V
VCC = 4.5 V
0.4 0.80 1.4 0.4 1.4 V
VCC = 5.5 V
0.6 1.00 1.5 0.6 1.5 V
[1] All typical values are measured at Tamb = 25 °C.
14. Waveforms transfer characteristics

8 of 17
Page 9


9 of 17
Page 10
15. Package outline
DIP14: plastic dual in-line package; 14 leads (300 mil)
SOT27-1


Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
| OUTLINE VERSION | REFERENCES | EUROPEAN PROJECTION | ISSUE DATE | ||||
| IEC | JEDEC | JEITA | |||||
| SOT27-1 | 050G04 | MO-001 | SC-501-14 | 99-12-27 03-02-13 | |||
Fig 13. Package outline SOT27-1 (DIP14)
10 of 17
Page 11
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1


Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
| OUTLINE VERSION | REFERENCES | EUROPEAN PROJECTION | ISSUE DATE | ||||
| IEC | JEDEC | JEITA | |||||
| SOT108-1 | 076E06 | MS-012 | 99-12-27 03-02-19 | ||||
Fig 14. Package outline SOT108-1 (SO14)
11 of 17
Page 12
SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm
SOT337-1



Fig 15. Package outline SOT337-1 (SSOP14)
12 of 17
Page 13
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm
SOT402-1



Fig 16. Package outline SOT402-1 (TSSOP14)
13 of 17
Page 14
DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads;
SOT762-1
14 terminals; body 2.5 x 3 x 0.85 mm


Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
| OUTLINE VERSION | REFERENCES | EUROPEAN PROJECTION | ISSUE DATE | ||||
| IEC | JEDEC | JEITA | |||||
| SOT762-1 | - - - | MO-241 | - - - | 02-10-17 03-01-27 | |||
Fig 17. Package outline SOT762-1 (DHVQFN14)
14 of 17
Page 15
16. Abbreviations
Table 11. Abbreviations Acronym
Description
CMOS
Complementary Metal Oxide Semiconductor
DUT
Device Under Test
ESD
ElectroStatic Discharge
HBM
Human Body Model
MM
Machine Model
TTL
Transistor-Transistor Logic
17. Revision history
Table 12. Revision history Document ID
Release date
Data sheet status
Change notice
Supersedes
20090702
-
74LV132_4
- Table 6: the conditions for HIGH-level output voltage and LOW-level output voltage have been
Modifications:
changed.
74LV132_4
20071112
-
74LV132_3
74LV132_3
20040415
Product specification -
74LV132_2
74LV132_2
19980428
Product specification -
74LV132_1
74LV132_1
19970204
Product specification -
-
15 of 17
Page 16
18. Legal information
18.1 Data sheet status
Document status[1][2]
Product status[3]
Definition This document contains data from the objective specification for product development.
Objective [short] data sheet
Development
This document contains data from the preliminary specification.
Preliminary [short] data sheet Qualification
This document contains the product specification.
Product [short] data sheet
Production
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
18.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
18.3 Disclaimers
General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
19. Contact information
For more information, please visit: http://www.nxp.com
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
18.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
For sales office addresses, please send an email to: salesaddresses@nxp.com
16 of 17
Page 17
20. Contents
1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 4 8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
9 Recommended operating conditions. . . . . . . . 5 10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 11 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 13 Transfer characteristics. . . . . . . . . . . . . . . . . . . 7 14 Waveforms transfer characteristics . . . . . . . . . 8 15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 16 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 15 17 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15 18 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 18.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
18.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 18.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 18.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 19 Contact information. . . . . . . . . . . . . . . . . . . . . 16 20 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 July 2009 Document identifier: 74LV132_5