74HCT3G04 PHILIPS
Document overview
- PDF pages: 17
Technical content
Page 1
INTEGRATED CIRCUITS
Page 2
FEATURES
- Wide supply voltage range from 2.0 to 6.0 V
- Symmetrical output impedance
- High noise immunity
- Low power dissipation
- Balanced propagation delays
- Very small 8 pins package
- Output capability: standard
- ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.
DESCRIPTION
The 74HC3G/HCT3G04 is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL). Specified in compliance with JEDEC standard no. 7. The 74HC3G/HCT3G04 provides three inverting buffers.
| SYMBOL | PARAMETER | CONDITIONS | TYPICAL | UNIT | |
|---|---|---|---|---|---|
| HC3G04 | HCT3G04 | ||||
| t /t PHL PLH | propagation delay nA to nY | C = 50 pF; V = 4.5 V L CC | 8 | 10 | ns |
| C I | input capacitance | 1.5 | 1.5 | pF | |
| C PD | power dissipation capacitance per buffer | notes 1 and 2 | 9 | 9 | pF |
Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total switching outputs; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For HC3G04 the condition is VI = GND to VCC. For HCT3G04 the condition is VI = GND to VCC − 1.5 V.
FUNCTION TABLE
See note 1.
| Column 1 | Column 2 |
|---|---|
| INPUT | OUTPUT |
| nA | nY |
| L | H |
| H | L |
Note 1. H = HIGH voltage level; L = LOW voltage level.
Page 3
ORDERING INFORMATION
| TYPE NUMBER | PACKAGE | |||||
|---|---|---|---|---|---|---|
| TEMPERATURE RANGE | PINS | PACKAGE | MATERIAL | CODE | MARKING | |
| 74HC3G04DP | −40 to +125 °C | 8 | TSSOP8 | plastic | SOT505-2 | H04 |
| 74HCT3G04DP | −40 to +125 °C | 8 | TSSOP8 | plastic | SOT505-2 | T04 |
| 74HC3G04DC | −40 to +125 °C | 8 | VSSOP8 | plastic | SOT765-2 | H04 |
| 74HCT3G04DC | −40 to +125 °C | 8 | VSSOP8 | plastic | SOT765-2 | T04 |
PINNING
| PIN | SYMBOL | DESCRIPTION |
|---|---|---|
| 1 | 1A | data input 1A |
| 2 | 3Y | data output 3Y |
| 3 | 2A | data input 2A |
| 4 | GND | ground (0 V) |
| 5 | 2Y | data output 2Y |
| 6 | 3A | data input 3A |
| 7 | 1Y | data output 1Y |
| 8 | V CC | supply voltage |
Page 4
Page 5
Inverter
74HC3G04; 74HCT3G04
RECOMMENDED OPERATING CONDITIONS
| SYMBOL | PARAMETER | CONDITIONS | 74HC3G04 | 74HCT3G04 | UNIT | ||||
|---|---|---|---|---|---|---|---|---|---|
| MIN. | TYP. | MAX. | MIN. | TYP. | MAX. | ||||
| V CC | supply voltage | 2.0 | 5.0 | 6.0 | 4.5 | 5.0 | 5.5 | V | |
| V I | input voltage | 0 | − | V CC | 0 | − | V CC | V | |
| V O | output voltage | 0 | − | V CC | 0 | − | V CC | V | |
| T amb | operating ambient temperature | see DC and AC characteristics per device | −40 | +25 | +125 | −40 | +25 | +125 | °C |
| t, t r f | input rise and fall times | V = 2.0 V CC | − | − | 1000 | − | − | − | ns |
| V = 4.5 V CC | − | 6.0 | 500 | − | 6.0 | 500 | ns | ||
| V = 6.0 V CC | − | − | 400 | − | − | − | ns |
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
|---|---|---|---|---|---|
| V CC | supply voltage | −0.5 | +7.0 | V | |
| I IK | input diode current | V < −0.5 V or V > V + 0.5 V; note 1 I I CC | − | ±20 | mA |
| I OK | output diode current | V < −0.5 V or V > V + 0.5 V; note 1 O O CC | − | ±20 | mA |
| I O | output source or sink current | −0.5 V < V < V + 0.5 V; note 1 O CC | − | 25 | mA |
| I CC | V or GND current CC | note 1 | − | 50 | mA |
| T stg | storage temperature | −65 | +150 | °C | |
| P D | power dissipation | T = −40 to +125 °C; note 2 amb | − | 300 | mW |
Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. Above 110 °C the value of PD derates linearly with 8 mW/K.
Page 6
Inverter
74HC3G04; 74HCT3G04
DC CHARACTERISTICS
Type 74HC3G04 At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
| SYMBOL | PARAMETER | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
|---|---|---|---|---|---|---|---|
| OTHER | V (V) CC | ||||||
| T = 25 °C amb | |||||||
| V IH | HIGH-level input voltage | 2.0 | 1.5 | 1.2 | − | V | |
| 4.5 | 3.15 | 2.4 | − | V | |||
| 6.0 | 4.2 | 3.2 | − | V | |||
| V IL | LOW-level input voltage | 2.0 | − | 0.8 | 0.5 | V | |
| 4.5 | − | 2.1 | 1.35 | V | |||
| 6.0 | − | 2.8 | 1.8 | V | |||
| V OH | HIGH-level output voltage | V = V or V I IH IL I = −20 µA O I = −20 µA O I = −20 µA O I = −4.0 mA O I = −5.2 mA O | 2.0 4.5 6.0 4.5 6.0 | 1.9 4.4 5.9 4.18 5.68 | 2.0 4.5 6.0 4.32 5.81 | − − − − − | V V V V V |
| V OL | LOW-level output voltage | V = V or V I IH IL I = 20 µA O I = 20 µA O I = 20 µA O I = 4.0 mA O I = 5.2 mA O | 2.0 4.5 6.0 4.5 6.0 | − − − − − | 0 0 0 0.15 0.16 | 0.1 0.1 0.1 0.26 0.26 | V V V V V |
| I LI | input leakage current | V = V or GND I CC | 6.0 | − | − | ±0.1 | µA |
| I CC | quiescent supply current | V = V or GND; I CC I = 0 O | 6.0 | − | − | 1.0 | µA |
Page 7
Inverter
74HC3G04; 74HCT3G04
| SYMBOL | PARAMETER | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
|---|---|---|---|---|---|---|---|
| OTHER | V (V) CC | ||||||
| T = −40 to +85 °C amb | |||||||
| V IH | HIGH-level input voltage | 2.0 | 1.5 | − | − | V | |
| 4.5 | 3.15 | − | − | V | |||
| 6.0 | 4.2 | − | − | V | |||
| V IL | LOW-level input voltage | 2.0 | − | − | 0.5 | V | |
| 4.5 | − | − | 1.35 | V | |||
| 6.0 | − | − | 1.8 | V | |||
| V OH | HIGH-level output voltage | V = V or V I IH IL I = −20 µA O I = −20 µA O I = −20 µA O I = −4.0 mA O I = −5.2 mA O | 2.0 4.5 6.0 4.5 6.0 | 1.9 4.4 5.9 4.13 5.63 | − − − − − | − − − − − | V V V V V |
| V OL | LOW-level output voltage | V = V or V I IH IL I = 20 µA O I = 20 µA O I = 20 µA O I = 4.0 mA O I = 5.2 mA O | 2.0 4.5 6.0 4.5 6.0 | − − − − − | − − − − − | 0.1 0.1 0.1 0.33 0.33 | V V V V V |
| I LI | input leakage current | V = V or GND I CC | 6.0 | − | − | ±1.0 | µA |
| I CC | quiescent supply current | V = V or GND; I CC I = 0 O | 6.0 | − | − | 10 | µA |
Page 8
| SYMBOL | PARAMETER | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
|---|---|---|---|---|---|---|---|
| OTHER | V (V) CC | ||||||
| T = −40 to +125 °C amb | |||||||
| V IH | HIGH-level input voltage | 2.0 | 1.5 | − | − | V | |
| 4.5 | 3.15 | − | − | V | |||
| 6.0 | 4.2 | − | − | V | |||
| V IL | LOW-level input voltage | 2.0 | − | − | 0.5 | V | |
| 4.5 | − | − | 1.35 | V | |||
| 6.0 | − | − | 1.8 | V | |||
| V OH | HIGH-level output voltage | V = V or V I IH IL I = −20 µA O I = −20 µA O I = −20 µA O I = −4.0 mA O I = −5.2 mA O | 2.0 4.5 6.0 4.5 6.0 | 1.9 4.4 5.9 3.7 5.2 | − − − − − | − − − − − | V V V V V |
| V OL | LOW-level output voltage | V = V or V I IH IL I = 20 µA O I = 20 µA O I = 20 µA O I = 4.0 mA O I = 5.2 mA O | 2.0 4.5 6.0 4.5 6.0 | − − − − − | − − − − − | 0.1 0.1 0.1 0.4 0.4 | V V V V V |
| I LI | input leakage current | V = V or GND I CC | 6.0 | − | − | ±1.0 | µA |
| I CC | quiescent supply current | V = V or GND; I CC I = 0 O | 6.0 | − | − | 20 | µA |
Page 9
Type 74HCT3G04 At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
| SYMBOL | PARAMETER | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
|---|---|---|---|---|---|---|---|
| OTHER | V (V) CC | ||||||
| T = 25 °C amb | |||||||
| V IH | HIGH-level input voltage | 4.5 to 5.5 | 2.0 | 1.6 | − | V | |
| V IL | LOW-level input voltage | 4.5 to 5.5 | − | 1.2 | 0.8 | V | |
| V OH | HIGH-level output voltage | V = V or V I IH IL I = −20 µA O I = −4.0 mA O | 4.5 4.5 | 4.4 4.18 | 4.5 4.32 | − − | V V |
| V OL | LOW-level output voltage | V = V or V I IH IL I = 20 µA O I = 4.0 mA O | 4.5 4.5 | − − | 0 0.15 | 0.1 0.26 | V V |
| I LI | input leakage current | V = V or GND I CC | 5.5 | − | − | ±0.1 | µA |
| I CC | quiescent supply current | V = V or GND; I CC I = 0 O | 5.5 | − | − | 1.0 | µA |
| ∆I CC | additional supply current per input | V = V −2.1 V; I CC I = 0 O | 4.5 to 5.5 | − | − | 300 | µA |
| T = −40 to +85 °C amb | |||||||
| V IH | HIGH-level input voltage | 4.5 to 5.5 | 2.0 | − | − | V | |
| V IL | LOW-level input voltage | 4.5 to 5.5 | − | − | 0.8 | V | |
| V OH | HIGH-level output voltage | V = V or V I IH IL I = −20 µA O I = −4.0 mA O | 4.5 4.5 | 4.4 4.13 | − − | − − | V V |
| V OL | LOW-level output voltage | V = V or V I IH IL I = 20 µA O I = 4.0 mA O | 4.5 4.5 | − − | − − | 0.1 0.33 | V V |
| I LI | input leakage current | V = V or GND I CC | 5.5 | − | − | ±1.0 | µA |
| I CC | quiescent supply current | V = V or GND; I CC I = 0 O | 5.5 | − | − | 10 | µA |
| ∆I CC | additional supply current per input | V = V −2.1 V; I CC I = 0 O | 4.5 to 5.5 | − | − | 375 | µA |
Page 10
| SYMBOL | PARAMETER | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
|---|---|---|---|---|---|---|---|
| OTHER | V (V) CC | ||||||
| T = −40 to +125 °C amb | |||||||
| V IH | HIGH-level input voltage | 4.5 to 5.5 | 2.0 | − | − | V | |
| V IL | LOW-level input voltage | 4.5 to 5.5 | − | − | 0.8 | V | |
| V OH | HIGH-level output voltage | V = V or V I IH IL I = −20 µA O I = −4.0 mA O | 4.5 4.5 | 4.4 3.7 | − − | − − | V V |
| V OL | LOW-level output voltage | V = V or V I IH IL I = 20 µA O I = 4.0 mA O | 4.5 4.5 | − − | − − | 0.1 0.4 | V V |
| I LI | input leakage current | V = V or GND I CC | 5.5 | − | − | ±1.0 | µA |
| I CC | quiescent supply current | V = V or GND; I CC I = 0 O | 5.5 | − | − | 20 | µA |
| ∆I CC | additional supply current per input | V = V −2.1 V; I CC I = 0 O | 4.5 to 5.5 | − | − | 410 | µA |
Page 11
AC CHARACTERISTICS
Type 74HC3G04 GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF.
| SYMBOL | PARAMETER | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
|---|---|---|---|---|---|---|---|
| WAVEFORMS | V (V) CC | ||||||
| T = 25 °C amb | |||||||
| t /t PHL PLH | propagation delay nA to nY | see Figs 5 and 6 | 2.0 | − | 22 | 75 | ns |
| 4.5 | − | 8 | 15 | ns | |||
| 6.0 | − | 6 | 13 | ns | |||
| t /t THL TLH | output transition time | see Figs 5 and 6 | 2.0 | − | 18 | 75 | ns |
| 4.5 | − | 6 | 15 | ns | |||
| 6.0 | − | 5 | 13 | ns | |||
| T = −40 to +85 °C amb | |||||||
| t /t PHL PLH | propagation delay nA to nY | see Figs 5 and 6 | 2.0 | − | − | 90 | ns |
| 4.5 | − | − | 18 | ns | |||
| 6.0 | − | − | 16 | ns | |||
| t /t THL TLH | output transition time | see Figs 5 and 6 | 2.0 | − | − | 95 | ns |
| 4.5 | − | − | 19 | ns | |||
| 6.0 | − | − | 16 | ns | |||
| T = −40 to +125 °C amb | |||||||
| t /t PHL PLH | propagation delay nA to nY | see Figs 5 and 6 | 2.0 | − | − | 110 | ns |
| 4.5 | − | − | 22 | ns | |||
| 6.0 | − | − | 20 | ns | |||
| t /t THL TLH | output transition time | see Figs 5 and 6 | 2.0 | − | − | 125 | ns |
| 4.5 | − | − | 25 | ns | |||
| 6.0 | − | − | 20 | ns |
Page 12
Type 74HCT3G04 GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF.
| SYMBOL | PARAMETER | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
|---|---|---|---|---|---|---|---|
| WAVEFORMS | V (V) CC | ||||||
| T = 25 °C amb | |||||||
| t /t PHL PLH | propagation delay nA to nY | see Figs 5 and 6 | 4.5 | − | 10 | 18 | ns |
| t /t THL TLH | output transition time | see Figs 5 and 6 | 4.5 | − | 6 | 15 | ns |
| T = −40 to +85 °C amb | |||||||
| t /t PHL PLH | propagation delay nA to nY | see Figs 5 and 6 | 4.5 | − | − | 23 | ns |
| t /t THL TLH | output transition time | see Figs 5 and 6 | 4.5 | − | − | 19 | ns |
| T = −40 to +125 °C amb | |||||||
| t /t PHL PLH | propagation delay nA to nY | see Figs 5 and 6 | 4.5 | − | − | 29 | ns |
| t /t THL TLH | output transition time | see Figs 5 and 6 | 4.5 | − | − | 22 | ns |
AC WAVEFORMS
Page 13
Inverter
74HC3G04; 74HCT3G04
S1 VCC
handbook, full pagewidth
open
VCC
GND RL = 1 kΩ
VI
VO
PULSE
D.U.T.
GENERATOR
CL =
RT
50 pF
MNA742
| Column 1 | Column 2 |
|---|---|
| TEST | S 1 |
| t /t PLH PHL | open |
| t /t PLZ PZL | V CC |
| t /t PHZ PZH | GND |
Definitions for test circuit: CL = load capacitance including jig and probe capacitance. RT = termination resistance should be equal to the output impedance Zo of the pulse generator.
Fig.6 Load circuitry for switching times.
Page 14
PACKAGE OUTLINES
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm
SOT505-2
D
E
A X
c
HE
v M A
y
Z
5
8
A2 A
(A3)
A1
pin 1 index
θ Lp L
1
4
detail X
w M
e bp
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
| UNIT | A max. | A1 | A2 | A3 | bp | c | D(1) | E(1) | e | HE | L | Lp | v | w | y | Z(1) | θ |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| mm | 1.1 | 0.15 0.00 | 0.95 0.75 | 0.25 | 0.38 0.22 | 0.18 0.08 | 3.1 2.9 | 3.1 2.9 | 0.65 | 4.1 3.9 | 0.5 | 0.47 0.33 | 0.2 | 0.13 | 0.1 | 0.70 0.35 | 8° 0° |
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
ISSUE DATE
VERSION
PROJECTION
IEC
JEDEC
JEITA
02-01-16
SOT505-2
- - -
Page 15
Inverter
74HC3G04; 74HCT3G04
VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm
SOT765-1
D
E
A X
c
y
HE
v M A
Z
5
8
Q
A2 A A1
(A3)
pin 1 index
θ Lp L
1
4
detail X
e
w M bp
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
| UNIT | A max. | A1 | A2 | A3 | bp | c | D(1) | E(2) | e | HE | L | Lp | Q | v | w | y | Z(1) | θ |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| mm | 1 | 0.15 0 0.00 0 | .85 .60 | 0.12 | 0.27 0.17 | 0.23 0.08 | 2.1 1.9 | 2.4 2.2 | 0.5 | 3.2 3.0 | 0.4 | 0.40 0.15 | 0.21 0.19 | 0.2 | 0.13 | 0.1 | 0.4 0.1 | 8° 0° |
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
ISSUE DATE
VERSION
PROJECTION
IEC
JEDEC
JEITA
02-06-07
SOT765-1
MO-187
Page 16
DATA SHEET STATUS
| Column 1 | Column 2 | Column 3 | Column 4 |
|---|---|---|---|
| LEVEL | DATA SHEET STATUS(1) | PRODUCT STATUS(2)(3) | DEFINITION |
| I | Objective data | Development | This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. |
| II | Preliminary data | Qualification | This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. |
| III | Product data | Production | This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). |
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
DISCLAIMERS
Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
Page 17
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
SCA75
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613508/02/pp17
Date of release: 2003 Oct 30
Document order number: 9397 750 10568
