74HC4316 PHILIPS
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Technical content
Product specification File under Integrated Circuits, IC06 September 1993 INTEGRATED CIRCUITS 74HC/HCT4316 Quad bilateral switches For a complete data sheet, please also download:
- The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications
- The IC06 74HC/HCT/HCU/HCMOS Logic Package Information
- The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4316
FEATURES
- Low “ON” resistance: 160 Ω (typ.) at VCC − VEE = 4.5 V 120 Ω (typ.) at VCC − VEE = 6.0 V 80 Ω (typ.) at VCC − VEE = 9.0 V
- Logic level translation: to enable 5 V logic to communicate with± 5 V analog signals
- Typical “break before make” built in
- Output capability: non-standard
- I CC category: MSI GENERAL DESCRIPTION The 74HC/HCT4316 are high-speed Si-gate CMOS devices. They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT4316 have four independent analog switches. Each switch has two input/output terminals (nY, nZ) and an active HIGH select input (nS). When the enable input ( E) is HIGH, all four analog switches are turned off. Current through a switch will not cause additional VCC current provided the voltage at the terminals of the switch is maintained within the supply voltage range; V CC >> (VY, VZ)>> VEE . Inputs nY and nZ are electrically equivalent terminals. VCC and GND are the supply voltage pins for the digital control inputs (E and nS). The VCC to GND ranges are 2.0 to 10.0 V for HC and 4.5 to 5.5 V for HCT. The analog inputs/outputs (nY and nZ) can swing between V CC as a positive limit and VEE as a negative limit. VCC − VEE may not exceed 10.0 V. See the “4016” for the version without logic level translation. QUICK REFERENCE DATA VEE = GND = 0 V; Tamb =2 5°C; tr =tf= 6 ns SYMBOL PARAMETER CONDITIONS TYPICAL UNIT HC HCT tPZH turn “ON” time C L = 15 pF; RL =1 kΩ ; VCC =5 VE to VOS 19 19 ns nS to VOS 16 17 ns tPZL turn “ON” time E to VOS 19 24 ns nS to VOS 16 21 ns tPHZ / tPLZ turn “OFF” time E to VOS 20 21 ns nS to VOS 16 19 ns C I input capacitance 3.5 3.5 pF C PD power dissipation capacitance per switch notes 1 and 2 13 14 pF C S max. switch capacitance 5 5 pF Notes 1. C PD is used to determine the dynamic power dissipation (PD inµW): PD =C PD × VCC 2 × fi+∑ {( CL + C S)× VCC 2 × fo } where: fi= input frequency in MHz fo = output frequency in MHz ∑ {( CL + C S)× VCC 2 × fo } = sum of outputs C L = output load capacitance in pF C S = max. switch capacitance in pF VCC = supply voltage in V 2. For HC the condition is VI= GND to VCC For HCT the condition is VI= GND to VCC − 1.5 V
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4316
ORDERING INFORMATION
See “74HC/HCT/HCU/HCMOS Logic Package Information”. PIN DESCRIPTION PIN NO. SYMBOL NAME AND FUNCTION 1, 4, 10, 13 1Z to 4Z independent inputs/outputs 2, 3, 11, 12 1Y to 4Y independent inputs/outputs E enable input (active LOW)
8 GND ground (0 V)
EE negative supply voltage 15, 5, 6, 14 1S to 4S select inputs (active HIGH) 16 V CC positive supply voltage Fig.1 Pin configuration. Fig.2 Logic symbol. Fig.3 IEC logic symbol. (b)
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4316 FUNCTION TABLE Note 1. H = HIGH voltage level L = LOW voltage level X = don’t care
APPLICATIONS
- Signal gating
- Modulation
- Demodulation
- Chopper INPUTS SWITCH En S L L L H off on H X off Fig.4 Functional diagram. Fig.5 Schematic diagram (one switch).
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4316 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Voltages are referenced to VEE = GND (ground = 0 V) Note to ratings To avoid drawing VCC current out of terminal Z, when switch current flows in terminals Yn, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into terminals Z, no VCC current will flow out of terminal Yn. In this case there is no limit for the voltage drop across the switch, but the voltages at Yn and Z may not exceed VCC or VEE . RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS VCC DC supply voltage −0.5 +11.0 V ±IIK DC digital input diode current 20 mA for V I<− 0.5 V or VI > VCC + 0.5 V ±ISK DC switch diode current 20 mA for V S <− 0.5 V or VS > VCC + 0.5 V ±IS DC switch current 25 mA for −0.5 V< VS < VCC + 0.5 V ±IEE DC V EE current 20 mA ±ICC ; ±IGND DC V CC or GND current 50 mA Tstg storage temperature range −65 +150 °C Ptot power dissipation per package for temperature range: −40 to+125 °C 74HC/HCT plastic DIL 750 mW above +70 °C: derate linearly with 12 mW/K plastic mini-pack (SO) 500 mW above +70 °C: derate linearly with 8 mW/K PS power dissipation per switch 100 mW SYMBOL PARAMETER 74HC 74HCT UNIT CONDITIONS VI DC input voltage range GND V CC GND V CC V VS DC switch voltage range V EE VCC VEE VCC V Tamb operating ambient temperature range−40 +85 −40 +85 °C see DC and AC CHARACTERISTICSTamb operating ambient temperature range−40 +125 −40 +125 °C tr, tf input rise and fall times 6.0 1000 500 400 250 6.0 500 ns V CC = 2.0 V VCC = 4.5 V VCC = 6.0 V VCC = 10.0 V
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4316 Fig.6 Guaranteed operating area as a function of the supply voltages for 74HC4316. Fig.7 Guaranteed operating area as a function of the supply voltages for 74HCT4316. DC CHARACTERISTICS FOR 74HC/HCT For 74HC: VCC − GND or VCC − VEE = 2.0, 4.5, 6.0 and 9.0 V Notes 1. At supply voltages (VCC − VEE ) approaching 2.0 V the analog switch ON-resistance becomes extremely non-linear. Therefore it is recommended that these devices are used to transmit digital signals only, when using these supply voltages. 2. For test circuit measuring R ON see Fig.8. SYMBOL PARAMETER Tamb (°C) UNIT TEST CONDITIONS 74HC/HCT VCC (V) VEE (V) IS (µA) Vis VI+25 −40 to+85 −40 to+125 R ON ON resistance (peak) 160 120 320 240 170 400 300 215 480 360 255 Ω Ω Ω Ω 2.0 4.5 6.0 4.5 −4.5 100 1000 1000 1000 VCC to VEE VIH or VIL R ON ON resistance (rail) 160 160 140 120 200 175 150 240 210 180 Ω Ω Ω Ω 2.0 4.5 6.0 4.5 −4.5 100 1000 1000 1000 VEE VIH or V IL R ON ON resistance (rail) 170 180 160 135 225 200 170 270 240 205 Ω Ω Ω Ω 2.0 4.5 6.0 4.5 −4.5 100 1000 1000 1000 VCC VIH or V IL ΔR ON maximum ΔON resistance between any two channels Ω Ω Ω Ω 2.0 4.5 6.0 4.5 −4.5 VCC to VEE VH or VIL
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4316 DC CHARACTERISTICS FOR 74HC Voltages are referenced to GND (ground = 0 V) SYMBOL PARAMETER Tamb (°C) UNIT TEST CONDITIONS 74HC VCC (V) VEE (V) VI OTHER+25 −40 to+85 −40 to+125 VIH HIGH level input voltage 1.5 3.15 4.2 6.3 1.2 2.4 3.2 4.3 1.5 3.15 4.2 6.3 1.5 3.15 4.2 6.3 V 2.0 4.5 6.0 9.0 V IL LOW level input voltage 0.8 2.1 2.8 4.3 0.5 1.35 1.8 2.7 0.5 1.35 1.8 2.7 0.5 1.35 1.8 2.7 V 2.0 4.5 6.0 9.0 I input leakage current 0.1 0.2 1.0 2.0 1.0 2.0 µA 6.0 10.0 VCC or GND ±IS analog switch OFF-state current 0.1 1.0 1.0 µA 10.0 0 VIH or VIL VS = VCC − VEE (see Fig.10) ±IS analog switch ON-state current 0.1 1.0 1.0 µA 10.0 0 VIH or VIL VS = VCC − VEE (see Fig.11) ICC quiescent supply current 8.0 16.0 80.0 160.0 160.0 320.0 µA 6.0 10.0 VCC or GND Vis=V EE or VCC ; VOS =V CC or VEE
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4316 AC CHARACTERISTICS FOR 74HC GND = 0 V; tr =tf= 6 ns; CL = 50 pF SYMBOL PARAMETER Tamb (°C) UNIT TEST CONDITIONS 74HC VCC (V) VEE (V) OTHER+25 −40 to+85 −40 to+125 tPHL / tPLH propagation delay Vis to Vos ns 2.0 4.5 6.0 4.5 −4.5 R L = ∞ ; CL = 50 pF (see Fig.18) tPZH / tPZL turn “ON” time E to Vos 205 255 310 ns 2.0 4.5 6.0 4.5 −4.5 R L =1 kΩ ; C L = 50 pF (see Figs 19, 20 and 21) t PZH / tPZL turn “ON” time nS to Vos 175 220 265 ns 2.0 4.5 6.0 4.5 −4.5 R L =1 kΩ ; C L = 50 pF (see Figs 19, 20 and 21) t PHZ / tPLZ turn “OFF” time E to Vos 220 275 330 ns 2.0 4.5 6.0 4.5 −4.5 R L =1 kΩ ; C L = 50 pF (see Figs 19, 20 and 21) t PHZ / tPLZ turn “OFF” time nS to Vos 175 220 265 ns 2.0 4.5 6.0 4.5 −4.5 R L =1 kΩ ; C L = 50 pF (see Figs 19, 20 and 21)
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4316 DC CHARACTERISTICS FOR 74HCT Voltages are referenced to GND (ground = 0) Note 1. The value of additional quiescent supply current (ΔICC ) for a unit load of 1 is given here. To determineΔICC per input, multiply this value by the unit load coefficient shown in the table below. SYMBOL PARAMETER Tamb (°C) UNIT TEST CONDITIONS 74HCT VCC (V) VEE (V) VI OTHER +25 −40 to+85 −40 to+125 VIH HIGH level input voltage to 5.5 V IL LOW level input voltage to 5.5 I input leakage current 0.1 1.0 1.0 µA 5.5 0 VCC or GND ±IS analog switch OFF-state current 0.1 1.0 1.0 µA 10.0 0V IH or VIL VS = VCC − VEE (see Fig.10) ±IS analog switch ON-state current 0.1 1.0 1.0 µA 10.0 0V IH or VIL VS = VCC − VEE (see Fig.11) ICC quiescent supply current 8.0 16.0 80.0 160.0 160.0 320.0 µA 5.5 5.0 −5.0 VCC or GND Vis=V EE or VCC ; VOS =V CC or VEE ΔICC additional quiescent supply current per input pin for unit load coefficient is 1 (note 1) 100 360 450 490 µA 4.5 to 5.5 VCC −2.1 V other inputs at VCC or GND INPUT UNIT LOAD COEFFICIENT nS E 0.50 0.50
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4316 Fig.8 Test circuit for measuring RON . Fig.9 Typical RON as a function of input voltage Vis for Vis= 0 to VCC − VEE . Fig.10 Test circuit for measuring OFF-state current. Fig.11 Test circuit for measuring ON-state current.
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4316 AC CHARACTERISTICS FOR 74HCT GND = 0 V; tr =tf= 6 ns; CL = 50 pF SYMBOL PARAMETER Tamb (°C) UNIT TEST CONDITIONS 74HCT VCC (V) VEE (V) OTHER +25 −40 TO +85 −40 to+125 tPHL / tPLH propagation delay Vis to Vos ns 4.5 4.5 −4.5 R L = ∞ ; C L = 50 pF (see Fig.18) tPZH turn “ON” time E to Vos ns 4.5 4.5 −4.5 R L =1 kΩ ; C L = 50 pF (see Figs 19, 20 and 21) t PZL turn “ON” time E to Vos ns 4.5 4.5 −4.5 tPZH turn “ON” time nS to Vos ns 4.5 4.5 −4.5 R L =1 kΩ ; C L = 50 pF (see Figs 19, 20 and 21) t PZL turn “ON” time nS to Vos ns 4.5 4.5 −4.5 t PHZ / tPLZ turn “OFF” time E to Vos ns 4.5 4.5 −4.5 R L =1 kΩ ; C L = 50 pF (see Figs 19, 20 and 21) t PHZ / tPLZ turn “OFF” time nS to Vos ns 4.5 4.5 −4.5 R L =1 kΩ ; C L = 50 pF (see Figs 19, 20 and 21)
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4316 ADDITIONAL AC CHARACTERISTICS FOR 74HC/HCT Recommended conditions and typical values GND = 0 V; Tamb =2 5°C Notes 1. Adjust input voltage Vis to 0 dBm level (0 dBm = 1 mW into 600Ω ). 2. Adjust input voltage Vis to 0 dBm level at VOS for 1 MHz (0 dBm = 1 mW into 50Ω ). General note Vis is the input voltage at an nY or nZ terminal, whichever is assigned as an input. Vos is the output voltage at an nY or nZ terminal, whichever is assigned as an output. SYMBOL PARAMETER typ. UNIT VCC (V) VEE (V) Vis(p-p) (V) CONDITIONS sine-wave distortion f = 1 kHz 0.80 0.40 2.25 4.5 −2.25 −4.5 4.0 8.0 R L = 10 kΩ ; CL = 50 pF (see Fig.14) sine-wave distortion f = 10 kHz 2.40 1.20 2.25 4.5 −2.25 −4.5 4.0 8.0 R L = 10 kΩ ; CL = 50 pF (see Fig.14) switch “OFF” signal feed-through −50 −50 dB dB 2.25 4.5 −2.25 −4.5 note 1 R L = 600Ω ; CL = 50 pF f = 1 MHz (see Figs 12 and 15) crosstalk between any two switches −60 −60 dB dB 2.25 4.5 −2.25 −4.5 note 1 R L = 600Ω ; CL = 50 pF; f = 1 MHz; (see Fig.16) V(p-p) crosstalk voltage between control and any switch (peak-to-peak value) 110 220 mV mV 4.5 4.5 −4.5 R L = 600 kΩ ; CL = 50 pF; f = 1 MHz (E or nS, square-wave between VCC and GND, tr =tf= 6 ns) (see Fig.17) fmax minimum frequency response (−3 dB) 150 160 MHz MHz 2.25 4.5 −2.25 −4.5 note 2 R L =5 0Ω ; CL = 10 pF (see Figs 13 and 14) C S maximum switch capacitance 5 pF Fig.12 Typical switch “OFF” signal feed-through as a function of frequency. Test conditions: VCC = 4.5 V; GND = 0 V; VEE = −4.5 V; R L =5 0Ω ; Rsource=1 kΩ .
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4316 Fig.13 Typical frequency response. Test conditions: VCC = 4.5 V; GND = 0 V; VEE = −4.5 V; R L =5 0Ω ; Rsource=1 kΩ . Fig.14 Test circuit for measuring sine-wave distortion and minimum frequency response. Fig.15 Test circuit for measuring switch “OFF” signal feed-through. Fig.16 Test circuit for measuring crosstalk between any two switches. (a) channel ON condition; (b) channel OFF condition. Fig.17 Test circuit for measuring crosstalk between control and any switch. The crosstalk is defined as follows (oscilloscope output):
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4316 AC WAVEFORMS Fig.18 Waveforms showing the input (Vis) to output (Vos) propagation delays. Fig.19 Waveforms showing the turn-ON and turn-OFF times. (1) HC : VM = 50%; VI= GND to VCC . HCT : VM = 1.3 V; VI= GND to 3 V.
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4316 TEST CIRCUIT AND WAVEFORMS Conditions Definitions for Figs 20 and 21: C L = load capacitance including jig and probe capacitance (see AC CHARACTERISTICS for values). R T = termination resistance should be equal to the output impedance ZO of the pulse generator. tr =tf= 6 ns; when measuring fmax , there is no constraint to tr, tf with 50% duty factor. PACKAGE OUTLINES See “74HC/HCT/HCU/HCMOS Logic Package Outlines”. TEST SWITCH V is tPZH tPZL tPHZ tPLZ others VEE VCC VEE VCC open VCC VEE VCC VEE pulse FAMILY AMPLITUDE V M tr; tf fmax ; PULSE WIDTH OTHER 74HC V CC 50% < 2 ns 6 ns 74HCT 3.0 V 1.3 V < 2 ns 6 ns Fig.20 Test circuit for measuring AC performance. Fig.21 Input pulse definitions.