Single bilateral switch

Document overview

  • Manufacturer or author: STMICROELECTRONICS
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Technical content

■ HIGH SPEED: tPD = 4ns (TYP .) at VCC = 4.5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) ■ LOW "ON" RESISTANCE: R ON = 50Ω (TYP .) AT VCC = 9V II/O = 100µA ■ SINE WAVE DISTORTION: 0.042% AT VCC = 4V f = 1KHz ■ WIDE OPERATING RANGE: V CC (OPR) = 2V TO 12V

DESCRIPTION

The 74H1G66 is a CMOS SINGLE BILATERAL SWITCH fabricated in silicon gate C2MOS technology. It achieves high speed performance combined with true CMOS low power consumption. The C input is provided to control the switch and it’s compatible with standard CMOS output; the switch is ON (port I/O is connected to Port O/I) when the C input is held high and OFF (high impedance state exists between the two ports) when C is held low. All inputs and output are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. 74H1G66 SINGLE BILATERAL SWITCH PIN CONNECTION AND IEC LOGIC SYMBOLS ORDER CODES PACKAGE T & R SOT23-5L 74H1G66STR SOT23-5L

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION TRUTH TABLE * High Impedance State ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C RECOMMENDED OPERATING CONDITIONS PIN No SYMBOL NAME AND FUNCTION

1 I/O Independent Input/Output

2 O/I Independent Output/Input

3 GND Ground (0V)

4C Enable Input (Active HIGH) 5 V CC Positive Supply Voltage C SWITCH FUNCTION HO N L OFF * Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +13.0 V VI/O DC Input/Output Voltage -0.5 to V CC + 0.5 V VIC DC Control Input Voltage -0.5 to V CC + 0.5 V IIOK DC Input/Output Diode Current ± 20 mA IIK DC Control Input Diode Current ± 20 mA IO DC Output Source Sink Current per Output Pin ± 25 mA ICC or IGND DC V CC or Ground Current ± 50 mA PD Power Dissipation 500 (*) mW Tstg Storage Temperature -65 to +150 °C TL Lead Temperature (10 sec) 300 °C Symbol Parameter Value Unit VCC Supply Voltage 2 to 12 V VI Control Input Voltage 0 to V CC V VI/O Input/Output Voltage 0 to V CC V Top Operating Temperature -55 to 125 °C tr, tf Input Rise and Fall Time on control pin V CC = 2.0V 0 to 1000 ns VCC = 4.5V 0 to 500 ns VCC = 6.0V 0 to 400 ns VCC = 10.0V 0 to 250 ns

(V) TA = 25°C -40 to 85°C -55 to 125°C VIH High Level Input Voltage 2.0 1.5 1.5 1.5 V4.5 3.15 3.15 3.15 9.0 6.3 6.3 6.3 12.0 8.4 8.4 8.4 V IL Low Level Input Voltage 2.0 0.5 0.5 0.5 V4.5 1.35 1.35 1.35 9.0 2.7 2.7 2.7 12.0 3.6 3.6 3.6 R ON ON Resistance 4.5 V IC = VIH VI/O = VCC to GND II/O ≤ 1mA 96 170 200 250 Ω9.0 55 85 100 150 12.0 45 80 90 120 R ON ON Resistance 4.5 VIC = VIH VI/O = VCC or GND II/O ≤ 1mA 70 100 130 160 Ω9.0 50 75 95 115 12.0 45 70 90 110 IOFF Input/Output Leakage Current (SWITCH OFF) 12.0 V OS = VCC to GND VIS = VCC to GND VIC = VIL ±0.1 ± 1 ± 2 µA IIZ Switch Input Leakage Current (SWITCH ON, OUTPUT OPEN)

12.0 V OS = VCC to GND

VIC = VIH ±0.1 ± 1 ± 2 µA IIN Control Input Leakage Current ICC Quiescent Supply Current 6.0 VI = VCC or GND 11 0 2 0 µA9.0 4 40 80 12.0 8 80 160

AC ELECTRICAL CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns) CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC Symbol Parameter Test Condition Value UnitVCC (V) TA = 25°C -40 to 85°C -55 to 125°C Φ I/O Phase Difference Between Input and Output 2.0 10 50 65 75 ns4 . 5 4 1 01 51 8 9.0 3 8 13 16 12.0 3 7 10 12 t PLZ tPHZ Output Disable Time 2.0 R L = 500 Ω 18 100 125 150 ns4 . 5 8 2 02 53 0 9 . 0 6 1 22 22 7 12.0 6 12 18 25 tPZL tPZH Output Enable Time 2.0 R L = 1 KΩ 20 115 145 175 ns4.5 10 23 29 35 9 . 0 8 2 02 53 0 12.0 8 18 22 27 Maximum Control Input Frequency

2.0 R L = 1 KΩ

C L = 15pF VO = 1/2VCC MHz4.5 30 9.0 30 12.0 30 Symbol Parameter Test Condition Value UnitTA = 25°C -40 to 85°C -55 to 125°C C IN Input Capacitance 5 1 01 01 0 p F C I/O Switch Terminal Capacitance 10 pF C IOS Feed through Capacitance 0.5 pF C PD Power Dissipation Capacitance (note 1) 15 pF

ANALOG SWITCH CHARACTERISTICS (GND = 0V; TA = 25°C) Symbol Parameter Test Condition Value UnitVCC (V) VIN (Vp-p) Typ. Sine Wave Distortion (THD) 4.5 4 fIN = 1 KHz RL = 10 KΩ , CL = 50 pF 0.04 %9.0 8 0.04 fMAX Frequency Response (Switch ON) 4.5 Adjust f IN voltage to obtain 0 dBm at VOS . Increase fIN Frequency until dB meter reads -3dB R L = 50Ω , CL = 10 pF 150 MHz9.0 180 Feed through Attenuation (Switch OFF)

4.5 V IN is centered at VCC /2

Adjust fIN Voltage to obtained 0dBm at VIS R L = 600Ω , CL = 50 pF, fIN = 1KHz sine wave -60 dB9.0 -60 Crosstalk (Control Input to Signal Output)

4.5 R L = 600Ω , CL = 50 pF, fIN = 1KHz square wave

tr = tf = 6ns mV9.0 60

SWITCHING CARACTERISTICS TEST CIRCUIT CROSSTALK (control to output BANDWIDTH AND FEEDTHROUGH ATTENUATION MAXIMUM CONTROL FREQUENCY

CHANNEL RESISTANCE (R ON) ICC (Opr.)

DIM. mm. mils A 0.90 1.45 35.4 57.1 A1 0.00 0.15 0.0 5.9 A2 0.90 1.30 35.4 51.2 b 0.35 0.50 13.7 19.7 C 0.09 0.20 3.5 7.8 D 2.80 3.00 110.2 118.1 E 2.60 3.00 102.3 118.1 E1 1.50 1.75 59.0 68.8 e0 . 9 5 3 7 . 4 e1 1.9 74.8 L 0.35 0.55 13.7 21.6 SOT23-5L MECHANICAL DATA

DIM. mm. inch A 180 7.086 D 20.2 0.795 N 60 2.362 T 14.4 0.567 Tape & Reel SOT23-xL MECHANICAL DATA

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