740H KIA
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10Amps，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 740HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheKIA740HN-ChannelenhancementmodesilicongatepowerMOSFETisdesignedfor high voltage,high speed power switching applications such as switching regulators,switching converters,solenoid,motordrivers,relaydrivers. 2.Features n RDS(on)=0.45 Ω@VGS=10V n Avalancheenergyspecified n Rugge-SOAispowerdissipationlimited n Fastswitchingcapability n Lineartransfercharacteristics n Highinputimpedance 3. Pinconfiguration 1of5 Rev1.1SEP2014 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
10Amps，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 740HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Ratings Units Drain-sourcevoltage VDSS 400 V Gate-sourcevoltage VGSS ±30 V Draincurrenetcontinuous Tc=25°C ID 10.0 A Tc=100°C 6.3 A Draincurrentpulsed IDP 8.0 A Avalancheenergy Repetitive EAR(Note4) 13.9 mJ Singlepulse EAS(Note3) 378 mJ Peakdioderecoverydv/dt dv/dt 4.5 V/ns Totalpowerdissipation Tc=25°C PD 139 W Derateabove25 °C 1.0 W/°C Junctiontemperature TJ +150 °C Storagetemperature TSTG -55~+150 °C Note:1.Absolutemaximumratingsarethosevaluesbeyondwhichthedevicecouldbepermanently damaged Absolutemaximumratingsarestressratingsonlyandfunctionaldeviceoperationisnotimplied 2.RepetitiveRatings:Pulsewidthlimitedbumaximumjunctiontemperature 3.L=6mH,IAS=10.5A,VDD=50V,RG=25 Ω,StartingTJ=25 °C 4.RepetitiveRating:Pulsewidthlimitedbymaximumjunctiontemperature 5. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-to-case θJC 1.0 ºC/W Thermalresistance,Junction-to-ambient θJA 62.5 ºC/W 2of5 Rev1.1SEP2014
10Amps，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 740HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Unit OffCharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 400 V Zerogatevoltagedraincurrent IDSS VDS=400V,V GS=0V 1 μA VDS=320V,T C=125 ºC 10 μA Gate-bodyleakage current Forward IGSS VGS=30V,VDS=0V 100 nA Reverse VGS=-30V,VDS=0V -100 nA Breakdownvoltagetemperature ΔBVDSS/ΔTJ ID=250μA, 0.4 V/ºC Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 4.0 V Staticdrain-sourceon-resistance RDS(on) VGS=10V,ID=5.2A 0.45 0.50 Ω Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V,f=1.0MHz 870 pF Outputcapacitance Coss 250 pF Reversetransfercapacitance Crss 85 pF Switchingcharacteristics Turn-ondelaytime td(on) VDD=200V,ID=10A,RG=9.1Ω 15 21 ns Risetime tr 25 41 ns Turn-offdelaytime td(off) 52 75 ns Falltime tf 25 36 ns Totalgatecharge Qg VDS=320V,ID=10A,VGS=10V, 41 63 nC Gate-sourcecharge Qgs 6.5 nC Gate-draincharge Qgd 23 nC Drain-sourcediodecharacteristicsandmaximumrating Drain-sourcediodeforwardvoltage VSD VGS=0V,ISD=10A 2.0 V ContinuousDrain-sourcecurrent ISD 10 A PulsedDrain-sourcecurrent ISM 40 A Reverserecoverytime trr ISD=10A,dISD/dt=100A/μs 170 390 790 ns Reverserecoverycharge Qrr 1.6 4.5 8.2 μC Note:1.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 2.Essentiallyindependentofoperatingtemperature 3of5 Rev1.1SEP2014
10Amps，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 740HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of5 Rev1.1SEP2014
10Amps，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 740HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1SEP2014