730H KIA

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6Amps，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 730HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheKIA730HN-ChannelenhancementmodesilicongatepowerMOSFETisdesignedfor high voltage,high speed power switching applications such as switching regulators,switching converters,solenoid,motordrivers,relaydrivers. 2.Features n RDS(on)=0.83Ω@VGS=10V n Lowgatecharge(typical20nC) n Avalancheenergyspecified n Fastswitchingcapability n Improveddv/dtcapability 3. Pinconfiguration 1of6 Rev1.1JAN2014 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

6Amps，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 730HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Ratings UnitsT0220 T0220F Drain-sourcevoltage VDSS 400 V Gate-sourcevoltage VGSS ±30 V Draincurrentcontinuous Tc=25°C ID 6.0 6.0* A Draincurrentpulsed （note1） IDP 24 24* A Avalancheenergy Repetitive(note1) EAR 7.3 mJ Singlepulse(note2) EAS 270 mJ Peakdioderecoverydv/dt(note3) dv/dt 4.5 V/ns Totalpowerdissipation Tc=25°C PD 73 38 W Derateabove25 °C 0.58 0.30 W/°C Junctiontemperature TJ +150 °C Storagetemperature TSTG -55~+150 °C *Draincurrentlimitedbymaximumjunctiontemperature 5. Thermalcharacteristics Parameter Symbol Rating UnitTO220 TO220F Thermalresistance,Junction-to-case RthJC 1.64 3.31 ºC/W Thermalresistance,Junction-to-ambient RthJA 62.5 62.5 ºC/W Thermalresistance,Case-to-sinktyp. RthCS 0.5 -- ºC/W 2of6 Rev1.1JAN2014

6Amps，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 730HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Unit OffCharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 400 - - V Zerogatevoltagedraincurrent IDSS VDS=400V,V GS=0V - - 1 μA VDS=320V,T C=125 ºC - - 10 μA Gate-bodyleakage current Forward IGSS VGS=30V,VDS=0V - - 100 nA Reverse VGS=-30V,VDS=0V - - -100 nA Breakdownvoltagetemperature ΔBVDSS/ΔTJ ID=250μA, - 0.54 - V/ºC Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 - 4.0 V Staticdrain-sourceon-resistance RDS(on) VGS=10V,ID=3.0A - 0.83 1.0 Ω Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 520 - pF Outputcapacitance Coss - 80 - pF Reversetransfercapacitance Crss - 15 - pF Switchingcharacteristics Turn-ondelaytime td(on) VDD=200V,ID=6.0A, RG=25Ω(note4,5) - 10 - ns Risetime tr - 60 - ns Turn-offdelaytime td(off) - 20 - ns Falltime tf - 40 - ns Totalgatecharge Qg VDS=320V,ID=6.0A, VGS=10V(note4,5) - 18 - nC Gate-sourcecharge Qgs - 2.5 - nC Gate-draincharge Qgd - 8.5 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,ISD=6.0A - - 1.4 V ContinuousDrain-sourcecurrent ISD - - 6.0 A PulsedDrain-sourcecurrent ISM - - 24.0 A Reverserecoverytime trr ISD=6.0A, dISD/dt=100A/μs(note4) - 250 - ns Reverserecoverycharge Qrr - 2.0 - μC Note:1.RepetitiveRating:Pulsewidthlimitedbymaximumjunctiontemperature 2.L=14mH,IAS=6.0A,VDD=50V,RG=25Ω,StartingTJ=25 ºC 3.ISD<6.0A,di/dt<200A/μs,V DD< BVDSS,StartingTJ=25 ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperature 3of6 Rev1.1JAN2014

6Amps，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 730HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of6 Rev1.1JAN2014

6Amps，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 730HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.1JAN2014

6Amps，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 730HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.1JAN2014