7160A KIA

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Technical content

20A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 7160AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.GeneralFeatures n ProprietaryNewPlanarTechnology n RDS(ON),typ.=0.35Ω@VGS=10V n LowGateChargeMinimizeSwitchingLoss n FastRecoveryBodyDiode 2.Applications n CRT,TV/Monitor n OtherApplications 3. Pinconfiguration 1of8 Rev1.0Aug2017 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

20A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 7160AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. OrderingInformation PartNumber Package Brand KNP7160A TO-220 KIA KNF7160A TO-220F KIA 5. Absolutemaximumratings (TC=25ºC,unlessotherwisespecified) Symbol Parameter KNP7160A KNF7160A Unit VDSS Drain-to-SourceVoltage [1] 400 VVGSS Gate-to-SourceVoltage ±30 ID ContinuousDrainCurrent 20 AContinuousDrainCurrent@Tc=100ºC Figure3 IDM PulsedDrainCurrentatV GS=10V[2] Figure6 EAS SinglePulseAvalancheEnergy 1000 mJ dv/dt PeakDiodeRecoverydv/dt [3] 5.0 V/ns PD PowerDissipation 250 60 W DeratingFactorabove25ºC 2.0 0.48 W/ºC TL TPAK MaximumTemperatureforSoldering Leadsat0.063in(1.6mm)fromCasefor10 seconds,PackageBodyfor10seconds 300 260 ºC TJ&TSTG OperatingandStorageTemperatureRange -55to150 Caution:Stressesgreaterthanthoselistedinthe“AbsoluteMaximumRatings”maycausepermanent damagetothedevice. 6. Thermalcharacteristics Symbol Parameter KNP7160A KNF7160A Unit RθJC ThermalResistance,Junction-to-Case 0.5 2.08 ºC/WRθJA ThermalResistance,Junction-to-Ambient 62 100 2of8 Rev1.0Aug2017

20A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 7160AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics OFFCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min. Typ. Max. Unit BVDSS Drain-to-SourceBreakdownVoltage VGS=0V,I D=250uA 600 -- -- V IDSS Drain-to-SourceLeakageCurrent VDS=48V,V GS=0V -- -- 1 uAVDS=600V,VGS=0V, IGSS Gate-to-SourceLeakageCurrent VGS=+30V,VDS=0V -- -- +100 nA VGS=-30V,V DS=0V -- -- -100 ONCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min. Typ. Max. Unit RDS(ON) StaticDrain-to-SourceOn-Resistance [4] VGS=10V,I D=10A -- 0.35 0.45 Ω VGS(TH) GateThresholdVoltage VDS=VGS,ID=250uA 2.0 -- 4.0 V gFS ForwardTransconductance [4] VDS=15V,ID=10A -- 15 -- S DynamicCharacteristics Essentiallyindependentofoperatingtemperature Symbol Parameter TestConditions Min. Typ. Max. Unit Ciss InputCapacitance VGS=0V, VDS=25V, f=1.0MHZ -- 2800 -- pFCrss ReverseTransferCapacitance -- 20 -- Coss OutputCapacitance -- 249 -- Qg TotalGateCharge VDD=300V, ID=20A, VGS=0to10V -- 60 -- nCQgs Gate-to-SourceCharge -- 14 -- Qgd Gate-to-Drain(Miller)Charge -- 23 -- ResistiveSwitchingCharacteristics Essentiallyindependentofoperatingtemperature Symbol Parameter TestConditions Min. Typ. Max. Unit td(ON) Turn-onDelayTime VDD=300V, ID=20A, VGS=10V RG=25Ω -- 35 -- nS trise RiseTime -- 72 -- td(OFF) Turn-OffDelayTime -- 155 -- tfall FallTime -- 70 -- Source-DrainBodyDiodeCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min Typ. Max. Unit ISD ContinuousSourceCurrent [4] IntegralPN-diodein MOSFET -- -- 20 A ISM PulsedSourceCurrent [4] -- -- 80 VSD DiodeForwardVoltage IS=20A,V GS=0V -- -- 1.5 V trr Reverserecoverytime VGS=0V,I F=20A, diF/dt=100A/μs -- 400 -- ns Qrr Reverserecoverycharge -- 3.0 -- uC Note: 1.TJ=+25°Cto+150°C 2. Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature. 3.ISD=20Adi/dt<100A/ μs,VDD<BVDSS ,TJ=+150°C. 4.Pulsewidth ≤380μs;dutycycle ≤2%. 3of8 Rev1.0Aug2017

20A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 7160AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of8 Rev1.0Aug2017

20A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 7160AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of8 Rev1.0Aug2017

20A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 7160AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of8 Rev1.0Aug2017

20A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 7160AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of8 Rev1.0Aug2017

20A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 7160AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8of8 Rev1.0Aug2017