6R1MBI75P-160 ETC1

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Compact Package
  • P.C. Board Mount Module
  • Converter Diode Bridge Dynamic Brake Circuit

Applications

  • Inverter for Motor Drive
  • AC and DC Servo Drive Amplifier
  • Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Symbol Condition Rating Unit Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current One cycle surge current I Operation junction temperature Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Repetitive peak reverse voltage Operation junction temperature Brake Converte Storage junction temperature Isolation voltage Mounting screw torque V RRM VRSM IO IFSM I2t Tj VCES VGES IC ICP PC VRRM Tj Tstg Viso 50Hz/60Hz sine wave Tc=115°C From rated load From rated load DC Tc=25°C Tc=75°C 1ms Tc=25°C Tc=75°C 1 device AC : 1 minute M5 screw 1600 1760 600 1440 -40 to +125 1400 ±20 100 240 1400 +150 -40 to +125 3000 2.0 to 2.5 V V A A A V V A A W V V N·m Fofward voltage Reverse current Zero gate voltage Collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Turn-off time Reverse current Electrical characteristics (Tj=25°C unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Thermal characteristics Item Symbol Condition Min. Typ. Max. Unit Thermal resistance Thermal Resistance(Case to fine) VFM IRRM ICES IGES VCE(sat) ton tr toff tf I RRM Rth(j-c) Rth(c-f) Tj=25°C, IFM=75A Tj=150°C, VR=VRRM VGE=0V. VCE=1400V VCE=0V. VGE=±20V VGE=15V. IC=35A Vcc=800V Ic=35A V GE=±15V RG=33ohm Converter Per total loss Per each device Brake IGBT (1 device) with thermal compound 1.35 1.0 200 2.4 2.8 0.35 1.2 0.25 0.6 0.45 1.0 0.08 0.3 1.0 0.16 0.96 0.70 0.08 V mA mA nA V µs mA °C/W °C/W Brake Co.

Forward Current IF (A) max typ 150deg 25deg Forward Characteristics Forward Voltage O utp ut C urrent - Total Loss 100 150 200 250 0 2 04 06 08 0 Output Current Io (A) Total Loss (W) Sur ge Cur r ent 100 200 300 400 500 600 700 0.01 0.1 1 Peak Surge Current IFSM(A) Tim e Out put Curr ent - Case Temper at ure 100 110 120 130 0 2 04 06 08 0 O utput Current Io (A ) Case Temperature Tc(deg.C) Transient Thermal Impedance 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Zth(j-c)(deg.C/W) Time [ Brake ] Transient Thermal I mpedance 0.01 0.1 0.001 0.01 0.1 1 10 Time (sec) Zth(j-c)(t) (deg.C/W) IGBT FWD 6R1MBi75P-160Diode Module

12V15VVGE= 20V [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ] 012345 10V 12V15VVGE= 20V [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 012345 Tj= 25°C Tj= 125°C [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 5 1 01 52 02 5 Ic= 17.5A Ic= 35A Ic= 70A [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] 0 5 10 15 20 25 30 35 100 1000 10000 [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] Coes Cres Cies 0 100 200 300 400 200 400 600 800 1000 [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=35A, Tj= 25°C Gate charge : Qg [ nC ] Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

Outline Drawings, mm Equivalent Circuit Schematic 6R1MBi75P-160 K C E G K C E G 328.5 1111 11.75 14 14 2.5 1.5 K C G E 6R1MBi100P-160 JAPAN 2.1 3.4 2 x t1 R1 20.4 78.5 711.75 14 7 0.5 21 7 23.5 4- 6.1 2- 5.5 Ø Ø Ø Ø 6R1MBi75P-160