IC
10 manufacturer specifications
The 6N138 and 6N139 devices each consists of an infrared emitting diode, optically coupled to a high gain split Darlington photo detector. They provide extremely high current transfer ratio…
Manufacturer Specifications
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| Manufacturer | Series | Package | Documents | Available | Select specification |
|---|---|---|---|---|---|
| AVAGO TECHNOLOGIES LIMI... | - | - | 4 | PDF HTML | View spec |
| Fairchild Semiconductor | - | - | 4 | PDF HTML | View spec |
| Vishay Siliconix | - | - | 3 | PDF HTML | View spec |
| Broadcom Corporation. | - | - | 2 | PDF HTML | View spec |
| Toshiba Semiconductor | - | - | 2 | PDF HTML | View spec |
| Agilent(Hewlett-Packard... | - | - | 1 | PDF HTML | View spec |
| Everlight Electronics C... | - | - | 1 | PDF HTML | Viewing |
| Lite-On Technology Corp... | - | - | 1 | PDF HTML | View spec |
| Marktech Corporate | - | - | 1 | PDF HTML | View spec |
| Sharp Corporation | - | - | 1 | PDF HTML | View spec |
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Summary
8 PIN DIP LOW INPUT CURRENT HIGH GAIN
Description
The 6N138 and 6N139 devices each consists of an infrared emitting diode, optically coupled to a high gain split Darlington photo detector. They provide extremely high current transfer ratio between input and output, with access to a base terminal to adjust the gain bandwidth.
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