6MBP75TEA060

6MBP75TEA060 FUJI

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 8

Technical content

Features

• Temperature protection provided by directly detecting the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating protection
• Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Symbol Rating Unit Min. Max. Bus voltage DC Surge Short operating Collector-Emitter voltage *1 Collector current DC 1ms Duty=75.0% *2 Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Solder temperature *8 Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Mounting (M5) V DC VDC(surge) VSC VCES IC ICP -IC PC VCC Vin Iin VALM IALM Tj Topr Tstg Tsol Viso Item 200 -0.5 -0.5 -0.5 -20 -40 450 500 400 600 150 198 Vcc+0.5 Vcc 150 100 125 260 AC2500 3.5 V V V V A A A W V V mA V mA V N·m Inverter Note *1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W, N and U or V or W *2 : 125 °C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.855/(75 x 2.6) x 100=75.0% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. *8 : Immersion time 10 ±1sec.

Item Symbol Condition Min. Typ. Max. Unit Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Current limit resistor Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Alarm terminal I ccp ICCN Vin(th) VZ tALM RALM 1.00 1.25 1.1 1425 1.35 1.60 8.0 2.0 1500 1.70 1.95 4.0 1575 mA mA V V V ms ms ms ohm Protection Section ( Vcc=15V) Turn-on time Turn-off time Reverse recovery time Maximum Avalanche Energy (A non-repetition) ton VDC=300V,Tj=125°C toff IC=75A Fig.1, Fig.6 trr VDC=300V, IC=75A Fig.1, Fig.6 P AV Internal wiring inductance=50nH Main circuit wiring inductace=54nH Thermal characteristics ( Tc=25°C) Item Symbol Min. Typ. Max. Unit Junction to Case thermal resistance *10 Case to fin thermal resistance with compound Rth(j-c) Rth(j-c) Rth(c-f) - - 0.63 - - 0.855 - 0.05 - °C/W °C/W °C/W Inverter IGBT FWD Item Symbol Min. Typ. Max. Unit DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) V DC VCC Recommendable value Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Symbol Condition Min. Typ. Max. Unit Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD ICES VCE(sat) VF VCE=600V Vin terminal open. Ic=75A -Ic=75A Terminal Chip Terminal Chip I OC tDOC tSC TjOH TjH VUV VH Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips 113 - - -5 - -- 8 150 - - -2 0 - 11.0 - 12.5 0.2 0.5 - A µs µs V V Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Common mode rectangular noise Common mode lightning surge Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs Interval 20s, 10 times Judge : no over-current, no miss operating ±2.0 - - ±5.0 - - Item Symbol Condition Min. Typ. Max. Unit Item Condition Min. Typ. Max. Unit kV kV - - 400 V 13.5 15.0 16.5 V 2.5 - 3.0 Nm Item Symbol Min. Typ. Max. Unit Weight Weight Wt - 270 - g Inverter - - 1.0 mA - - 2.4 V - 2.0 - - - 2.6 V - 1.6 - 1.2 - - µs - - 3.6 - - 0.3 40 - - mJ *10 : (For 1 device, Case is under the device)

Outline drawings, mm Mass : 270g U V W Vcc VinX GND VinY VinZ AL M B N VinDB VccW ALM W GNDW Vcc V AL MV GNDV P VccU AL MU GNDU VinU VinV VinW Pr e- Dr iv e r Pr e- Dr iv e r Pr e- Dr iv e r Pr e- Dr iv e r Pr e- Dr iv e r Pr e- Dr iv e r VzR ALM 1.5k R ALM 1.5k Vz R ALM 1.5k Vz Vz Vz Vz R ALM 1.5k Pr e- Dr iv e rPr e- Dr iv e r Pr e- Dr iv e rPr e- Dr iv e r Pr e- Dr iv e rPr e- Dr iv e r Pr e- Dr iv e rPr e- Dr iv e r Pr e- Dr iv e rPr e- Dr iv e r Pr e- Dr iv e rPr e- Dr iv e r U V W Vcc VinX GND VinY VinZ AL M B N VinDB VccW ALM W GNDW Vcc V AL MV GNDV P VccU AL MU GNDU VinU VinV VinW Pr e- Dr iv e r Pr e- Dr iv e r Pr e- Dr iv e r Pr e- Dr iv e r Pr e- Dr iv e r Pr e- Dr iv e r VzR ALM 1.5k R ALM 1.5k Vz R ALM 1.5k Vz Vz Vz Vz R ALM 1.5k Pr e- Dr iv e rPr e- Dr iv e r Pr e- Dr iv e rPr e- Dr iv e r Pr e- Dr iv e rPr e- Dr iv e r Pr e- Dr iv e rPr e- Dr iv e r Pr e- Dr iv e rPr e- Dr iv e r Pr e- Dr iv e rPr e- Dr iv e r Pre-drivers include following functions 1.Amplifier for driver 2.Short circuit protection 3.Under voltage lockout circuit 4.Over current protection 5.IGBT chip over heating protectionMBCF M

Control circuit characteristics (Respresentative) 6MBP75TEA060 0 5 10 15 20 25 Power supply current vs. Switching frequency Tc=125°C N-side P-side Power supply current : Icc (mA) Switching frequency : fsw (kHz) Vcc=13V Vcc=13V Vcc=15V Vcc=15V Vcc=17V Vcc=17V 0.5 1.5 2.5 12 13 14 15 16 17 18 Input signal threshold voltage vs. Power supply voltage Input si gnal threshold voltage : Vin(on),Vin(off) (V) Power supply voltage : Vcc (V) Tj=25°C Tj=125°C } Vin(on) } Vin(off) 20 40 60 80 100 120 140 Under voltage vs. Junction temperature Und er voltag e : VUVT (V) Ju nction temperatu re : Tj (°C) 0.2 0.4 0.6 0.8 20 40 60 80 100 120 140 Under voltage hysterisis vs. Jnction temperature Under voltage hysterisi s : VH (V) Ju nction temperatu re : Tj (°C) 0.5 1.5 2.5 12 13 14 15 16 17 18 Alarm hold time vs. Power supply voltage Alarm hold time : tALM (mSec) Power supply voltage : Vcc (V) Tc=100°C Tc=25°C 100 150 200 12 13 14 15 16 17 18 Over heating characteristics TjOH,TjH vs. Vcc Over heating protection : TjOH (°C) OH hysterisis : TjH (°C) Power supply voltage : Vcc (V) TjOH TjH

Main circuit characteristics (Respresentative) 100 00 . 511 . 522 . 53 Collector current vs. Collector-Emitter voltage Tj=25°C(Chip) Vcc=13V Vcc=15V Vcc=17V Collector Current : Ic (A) Collector-Emitter voltage : Vce (V) 100 00 . 511 . 522 . 53 Collector current vs. Collector-Emitter voltage Tj=25°C(Terminal) Vcc=13V Vcc=15V Vcc=17V Collector Current : Ic (A) Collector-Emitter voltage : Vce (V) 100 00 . 511 . 522 . 53 Collector current vs. Collector-Emitter voltage Tj=125°C(Chip) Vcc=13V Vcc=15V Vcc=17V Collector Cu rrent : Ic (A) Collector-Emitter voltage : Vce (V) 100 00 . 511 . 522 . 53 Collector current vs. Collector-Emitter voltage Tj=125°C(Terminal) Vcc=13V Vcc=15V Vcc=17V Collector Current : Ic (A) Collector-Emitter voltage : Vce (V) 100 150 00 . 511 . 522 . 5 Forward current vs. Forward voltage (Chip) 125°C 25°C Forward Current : If (A) Forward voltage : Vf (V) 100 150 00 . 511 . 522 . 5 Forward current vs. Forward voltage (Terminal) 125°C 25°C Forward Current : If (A) Forward voltage : Vf (V)

Switching Loss vs.Collector Current Edc=300V,Vcc=15V,Tj=25°C Eon Eoff Er r Switch in g loss : Eon,Eoff,Err (m J/cycle) Collector current : Ic (A) 02 0 4 0 6 0 8 0 Switching Loss vs.Collector Current Edc=300V,Vcc=15V,Tj=125°C Eon Eoff Err Switching loss : Eon,Eoff,Err (mJ/cycle) Collector current : Ic (A) 0.01 0.1 0.001 0.01 0.1 1 Transient thermal resistance Thermal resi stance : Rth(j-c) (°C/W) Pulse width :Pw (sec) IGBT FWD 100 150 200 250 0 20 40 60 80 100 120 140 160 Power derati ng f or IGBT (per device) Collecter Power Dissipation : Pc (W) Case Temperature : Tc ( °C ) 100 150 200 0 20 40 60 80 100 120 140 160 Power derating for FWD (per device) Collecter Power Dissipation : Pc (W) Case Temperature : Tc ( °C )

Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=25°C Switching time : ton,toff,tf (nSec) Collector cu rren t : Ic (A) toff ton tf 100 1000 10000 20 40 60 80 100 120 Switching time vs. Collector current Edc=300V,Vcc=15V,T j=125°C Switching time : ton,toff,tf (nSec) Collector cu rren t : Ic (A) toff ton tf 100 20 40 60 80 100 120 Reverse recovery characteristics trr,Irr vs.IF Reverse recovery current:Irr(A) Reverse recovery time:trr(nsec) Forward cu rren t:IF(A) trr125 °C trr25 °C Irr125 °C Irr25 °C