6MBP75RTB060

6MBP75RTB060 FUJI

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 8

Technical content

Features

• Temperature protection provided by directly detecting the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating protection
• Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Symbol Rating Unit Min. Max. DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current DC 1ms Duty=74.9% Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) V DC VDC(surge) VSC VCES *1 IC ICP -IC *2 PC *3 Tj VCC *4 Vin *5 Iin VALM *6 IALM *7 Tstg Topr Viso *8 Item 200 -0.5 -0.5 -0.5 -40 -20 450 500 400 600 150 198 150 Vcc+0.5 Vcc 125 100 AC2.5 3.5 * 3.5 *9 V V V V A A A W V V mA V mA kV N·m N·m *1 : Vces shall be applied to the input voltage between terminal P and U or V or W, N and U or V or W. *2 : 125°C/FWD Rth(j-c)/(Ic x V F MAX)=125/0.855/(75 x 2.6)x100=74.9% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter] *4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *6 : VALM shall be spplied to the voltage between terminal No. 16 and 10. *7 : IALM shall be applied to the input current to terminal No. 16. *8 : 50Hz/60Hz sine wave 1 minute. *9 : Recommendable Value : 2.5 to 3.0 N·m Fig.1 Measurement of case temperature

Item Symbol Condition Min. Typ. Max. Unit Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Limiting resistor for alarm Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 I ccp ICCN Vin(th) VZ tALM RALM 1.00 1.25 1.1 1425 1.35 1.60 8.0 2.0 1500 1.70 1.95 4.0 1575 mA mA V V V ms ms ms ohm Protection Section ( Vcc=15V) Turn-on time Turn-off time Reverse recovery time Maximum Avalanche Energy (A non-repetition) ton VDC=300V,Tj=125°C toff IC=75A Fig.1, Fig.6 trr VDC=300V, IC=75A Fig.1, Fig.6 P AV Internal wiring inductance=50nH Main circuit wiring inductace=54nH Thermal characteristics ( Tc=25°C) Item Symbol Min. Typ. Max. Unit Junction to Case thermal resistance Case to fin thermal resistance with compound Rth(j-c) Rth(j-c) Rth(c-f) - - 0.63 - - 0.855 - 0.05 - °C/W °C/W °C/W INV IGBT FWD Item Symbol Min. Typ. Max. Unit DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) V DC VCC Recommendable value Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Over Heating Protection Hysteresis Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Symbol Condition Min. Typ. Max. Unit INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD ICES VCE(sat) VF VCE=600V Vin terminal open. Ic=75A -Ic=75A - - 1.0 mA - - 2.4 V - 2.0 - - - 2.6 V - 1.6 - 1.2 - - µs - - 3.6 - - 0.3 40 - - mJ Terminal Chip Terminal Chip I OC tDOC tSC TjOH TjH TCOH TCH VUV VH Tj=125°C Tj=125°C Tj=125°C Fig.4 surface of IGBT chips VDC=0V, Ic=0A, Case temperature 113 - - -5 - -- 8 150 - - -2 0 - 110 - 125 -2 0 - 11.0 - 12.5 0.2 0.5 - A µs µs V Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Common mode rectangular noise Common mode lightning surge Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs Interval 20s, 10 times Judge : no over-current, no miss operating ±2.0 - - ±5.0 - - Item Symbol Condition Min. Typ. Max. Unit Item Condition Min. Typ. Max. Unit kV kV - - 400 V 13.5 15.0 16.5 V 2.5 - 3.0 Nm Item Symbol Min. Typ. Max. Unit Weight Weight Wt - 450 - g *9 : (For 1 device, Case is under the device)

Outline drawings, mm Mass : 450g VccU 3 VinU 2 GNDU 1 VccV 6 VinV 5 GNDV 4 VccW 9 VinW 8 GNDW 7 Vcc 11 VinX 13 GND 10 VinY 14 VinZ 15 ALM 16 P U V W B N Pre-driver include following functions

1 Amplif ier f or drive

2 Short circuit protection

3 Under voltage lockout circuit

4 Over current protection

5 IGBT chip over heating protection

1.5kΩ Over heating protection circuit NC NC

Control circuit characteristics (Respresentative) Power supply current vs. Switching frequency 0 5 10 15 20 25 Switching frequency fsw (kHz) 12 13 14 15 16 17 18 Power supply voltage Vcc (V) Power supply current Icc (mA) Input signal threshold voltage Vin (ON), Vin (OFF), (V) Input signal threshold voltage vs. Power supply voltage

0 Under voltage VUVT (V)

Under voltage vs. Junction temperature Undervoltage hysterisis V H (V) Under voltage hysterisis vs. Junction temperature Alarm hold time t ALM (msec.) Alarm hold time vs. Power supply voltage Overheating protection TCOH,TjOH (°C) OH hysterisis T CH,TjH (°C) Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC Tc=125°C 20 40 60 80 100 120 140 Junction temperature Tj ( °C) 12 13 14 15 16 17 18 Power supply voltage Vcc (V) N-side Tj=25°C Tj=125°C2.5 2.0 1.5 1.0 0.5 1.0 0.8 0.6 0.4 0.2 3.0 2.5 2.0 1.5 1.0 0.5 200 150 100 6MBP75RTB060 20 40 60 80 100 120 140 Junction temperature Tj ( °C) 12 13 14 15 16 17 18 Power supply voltage Vcc (V)

Collector current vs. Collector-Emitter voltage Collector current Ic (A) Collector current vs. Collector-Emitter voltage Collector current Ic (A) Forward current vs. Forward voltage (Chip) Forward current IF (A) 0 0.5 1 1.5 2 2.5 Foeward voltage VF (V) 150 100 Tj=25°C(Chip) Tj=25°C(Terminal) Collector current vs. Collector-Emitter voltage Collector current Ic (A) Tj=125°C(Chip) Collector current vs. Collector-Emitter voltage Collector current Ic (A) Tj=125°C(Terminal) Forward current vs. Forward voltage (Terminal) Forward current IF (A) 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage V CE (V) 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage V CE (V) 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage V CE (V) 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage V CE (V) 150 100 0 0.5 1 1.5 2 2.5 Foeward voltage VF (V) Main circuit characteristics (Respresentative)

Transient thermal resistance 0.001 0.01 0.1 1 Pulse width Pw (sec.) 0.1

0.01 Thermal resistance Rth(j-c) (°C/W)

Reverse biased safe operating area Collector current Ic (A) 0 20 40 60 80 100 120 140 160 Case temperature Tc (°C) Collector power dissipation Pc (W) Power derating for FWD (per device) Collector power dissipation Pc (W) 0 100 200 300 400 500 600 700 Collector-Emitter voltage VCE (V) 300 250 200 150 100 <=Vcc=15V, Tj 125°C Power derating for IGBT (per device) Switching loss Eon,Eoff, Err (mJ/cycle) 0 20 40 60 80 Collector current IC (A) Switching Loss vs. Collector current Edc=300V, Vcc=15V, Tj=25°C Switching loss Eon,Eoff, Err (mJ/cycle) Switching Loss vs. Collector current Edc=300V, Vcc=15V, Tj=125°C 0 20 40 60 80 Collector current IC (A) 200 150 100 0 20 40 60 80 100 120 140 160 Case temperature Tc (°C) 250 200 150 100

Collector current Ic (A) Switching time ton,toff,tf ( nsec.) 10000 1000 100 Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=25°C Reverse recovery current Irr (A) Reverse recovery time trr (nsec.) Reverse recovery characteristics trr, Irr, vs. IF 100 20 40 60 80 100 120 Foeward current IF (A) Switching time ton,toff,tf ( nsec.) 10000 1000 100 Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=125°C 20 40 60 80 100 120 Collector current Ic (A)