6MBP75RJ120

6MBP75RJ120 FUJI

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 8

Technical content

Features

• Temperature protection provided by directly detecting the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating protection
• Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Symbol Rating Unit Min. Max. Bus voltage DC Surge Short operating Collector-Emitter voltage *1 Collector current DC 1ms Duty=76.1% *2 Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Terminal (M5) Mounting (M5) V DC VDC(surge) VSC VCES IC ICP -IC PC VCC Vin Iin VALM IALM Tj Topr Tstg Viso Item 200 -0.5 -0.5 -0.5 -20 -40 900 1000 800 1200 150 500 Vcc+0.5 Vcc 150 100 125 AC2500 3.5 3.5 V V V V A A A W V V mA V mA V N·m N·m Inverter Note *1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W, N and U or V or W *2 : 125 °C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.73/(75 x 3.0) x 100=76.1% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.25=500W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.

Item Symbol Condition Min. Typ. Max. Unit Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Limiting Resistor for Alarm Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 I ccp ICCN Vin(th) VZ tALM RALM 1.00 1.25 1.1 1425 1.35 1.60 8.0 2.0 1500 1.70 1.95 4.0 1575 mA mA V V V ms ms ms ohm Protection Section ( Vcc=15V) Turn-on time Turn-off time Reverse recovery time ton VDC=600V,Tj=125°C toff IC=75A Fig.1, Fig.6 trr VDC=600V, IF=75A Fig.1, Fig.6 Thermal characteristics ( Tc=25°C) Item Symbol Min. Typ. Max. Unit Junction to Case thermal resistance *8 Case to fin thermal resistance with compound Rth(j-c) Rth(j-c) Rth(c-f) - - 0.25 - - 0.73 - 0.05 - °C/W °C/W °C/W Inverter IGBT FWD Item Symbol Min. Typ. Max. Unit DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) V DC VCC Recommendable value Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Protection Temperature Level Over Heating Protection Hysteresis Over Heating Protection Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Symbol Condition Min. Typ. Max. Unit Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD ICES VCE(sat) VF VCE=1200V Vin terminal open. Ic=75A -Ic=75A Terminal Chip Terminal Chip I OC tDOC tSC TjOH TjH TcOH TcH VUV VH Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips V DC=0V, IC=0A CaseTemperature 113 - - -1 0 - -- 1 2 150 - -2 0 - 110 - 125 -2 0 - 11.0 - 12.5 0.2 0.5 - A µs µs V V Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Common mode rectangular noise Common mode lightning surge Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs Interval 20s, 10 times Judge : no over-current, no miss operating ±2.0 - - ±5.0 - - Item Symbol Condition Min. Typ. Max. Unit Item Condition Min. Typ. Max. Unit kV kV - - 800 V 13.5 15.0 16.5 V 2.5 - 3.0 Nm Item Symbol Min. Typ. Max. Unit Weight Weight Wt - 450 - g Inverter - - 1.0 mA - - 2.6 V - 1.9 - - - 3.0 V - 2.3 - 1.2 - - µs - - 3.6 - - 0.3 *8 : (For 1 device, Case is under the device)

Outline drawings, mm Mass : 450g Pre-drivers include following functions 1.Amplifier for driver 2.Short circuit protection 3.Under voltage lockout circuit 4.Over current protection 5.IGBT chip over heating protection U V W Vcc VinX GND VinY VinZ ALM B N VinD B VccW ALM W GNDW VccV ALM V GNDV P VccU ALM U GNDU VinU VinV VinW Pr e - Dr iv er Pr e - Dr iv er Pr e - Dr iv er Pr e - Dr iv er Pr e- Driver Pr e - Dr iv er VzRALM 1.5k RALM 1.5k Vz RALM 1.5k Vz Vz Vz Vz RALM 1.5k Ov er heating protection circuit NC U V W Vcc VinX GND VinY VinZ ALM B N VinD B VccW ALM W GNDW VccV ALM V GNDV P VccU ALM U GNDU VinU VinV VinW Pr e - Dr iv er Pr e - Dr iv er Pr e - Dr iv er Pr e - Dr iv er Pr e- Driver Pr e - Dr iv er VzRALM 1.5k RALM 1.5k Vz RALM 1.5k Vz Vz Vz Vz RALM 1.5k Ov er heating protection circuit NC 1212 1111 1010 1414 1616 1313 1717 1818 1515 1919 12.5 22 9 717 1.0 52.02.02.02.0 51.051.0 3.0 3.0 66.44 1210 6.0+ 3.0- 0.1+ 3.0- 0.1+ 2.0- 5M-6 0.1+ 3.0- 3.0 3.0 51.0 3.0 0.5 262624 0.5 210 17 20 20 3.22 13.8 109 B UVW N P 4- 5 19- 0.5 2- 2.5 +_+_ +_+_ +_+_

Control circuit characteristics (Respresentative) 6MBP75RJ120 0 5 10 15 20 25 Power supply current vs. Switching freque ncy Tj=100 °C N-side P-side Power supply current : Icc (mA) Switchi ng frequ en cy : fsw (kHz ) Vcc=13V Vcc=13V Vcc=15V Vcc=15V Vcc=17V Vcc=17V 0.5 1.5 2.5 12 13 14 15 16 17 18 Input signal threshold voltage vs. Power supply voltage In pu t si gn al threshol d v oltage Power su pply vol tage : Vcc (V) Tj =25°C Tj=125°C } Vin(on) } Vin(off) : Vi n(on),Vi n(off) (V) 20 40 60 80 100 120 140 Under voltage vs. Junction temperature Under voltage : VUVT (V) Junction temperatu re : Tj (°C) 0.2 0.4 0.6 0.8 20 40 60 80 100 120 140 Under voltage hysterisis vs. Jnction temperature Under vol tage hysterisis : VH (V) Junction temperature : Tj (°C) 0.5 1.5 2.5 12 13 14 15 16 17 18 Alarm hold time vs. Power supply voltage Alarm hold time : tALM (mSec) Power su pply vol tage : Vcc (V) Tj=125°C Tj=25°C 100 150 200 12 13 14 15 16 17 18 Over heating characteristics TcOH,TjOH,TcH,TjH vs. Vcc Over heating protection : TcOH,TjOH (°C) Power supply voltage : Vcc (V) TjOH TcOH TcH,TjH OH hysterisis : TcH ,Tj H (°C)

Main circuit characteristics (Respresentative) 100 120 00 . 511 . 522 . 53 Collector current vs. Collector-Emitter voltage Tj=25 °C( Chip) Collector Current : Ic (A) C ollector-Emitter voltage : Vce (V) Vcc=13V Vcc=15V Vcc=17V 100 120 00 . 511 . 522 . 53 Collector current vs. Collector-Emitter voltage Tj =25°C( Terminal ) Collector Current : Ic (A) C ollector-Emitter voltage : Vce (V) Vcc=13V Vcc=15V Vcc=17V 100 120 00 . 511 . 522 . 53 Vcc=13V Vcc=15V Vcc=17V Collector current vs. Collector-Emitter voltage Tj=125 °C( Chip ) Collector Current : Ic (A) C ollector-Emitter voltage : Vce (V) 100 120 00 . 511 . 522 . 53 Vcc=13V Vcc=15V Vcc=17V Collector current vs. Collector-Emitter voltage Tj=125 °C (Terminal ) Collector Current : Ic (A) C ollector-Emitter voltage : Vce (V) 100 120 00 . 511 . 522 . 53 Forward current vs. Forward voltage (Chip) Forward Current : If (A) Forward voltage : Vf (V) 125°C 25°C 100 120 00 . 511 . 522 . 53 Forward current vs. Forward voltage (Terminal) Forward Current : If (A) Forward voltage : Vf (V) 125°C 25°C

Switching Loss vs. Collector Current Edc=600V,Vcc=15V,Tj=25 °C Switching loss : Eon,Eoff,Err (mJ/cycle) Collector curren t : Ic (A) Eon Eoff Err 0 2 04 06 08 0 1 0 0 1 2 0 Swi tchin g Loss vs. Col lect or Cu rren t Edc=600V,Vcc=15V,Tj=125 °C Eon Eoff Err Switching loss : Eon,Eoff,Err (mJ/cycle) Collector current : Ic (A) 0.01 0.1 0.001 0.01 0.1 1 Transient thermal resistance Thermal resistance : Rth(j-c) (°C/W) Pulse width :Pw (sec) FW D IGBT 100 200 300 400 500 600 0 20 40 60 80 100 120 140 160 Power derating for IGBT (per device) Collecter Pow er Dissipation : Pc (W) Case Temperature : Tc (°C) 100 125 150 175 200 0 20 40 60 80 100 120 140 160 Power derating for FWD (per device) Collecter Power Dissipation : Pc (W) Case Temperature : Tc (°C) 150 300 450 600 750 900 1050 0 200 400 600 800 1000 1200 1400 Reversed biased safe operating area Vcc=15V,Tj 125 °C Collector current : Ic (A) Collector-Emitt er voltage : Vce (V) SCSOA (non-repetitive pulse) RBSOA (Repetitive pulse)

Switching time vs. Collector current Edc=600V,Vcc=15V,Tj=25 °C Switching time : ton,toff,tf (nSec) Collector curren t : Ic (A) toff ton tf 100 1000 10000 0 20 40 60 80 100 120 Switching time vs. Collector current Edc=600V,Vcc=15V,Tj=125 °C Switching time : ton,toff,tf (nSec) Collector curren t : Ic (A) toff ton tf 100 1000 0 20 40 60 80 100 120 Reverse recovery characteristics trr,Irr vs. IF Reverse recovery current : Irr(A) Reverse recovery time : trr(nSec) Forward current : IF(A) trr125°C trr25°C Irr125°C Irr25°C