6MBP75RA120 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 7

Technical content

Features

  • Temperature protection provided by directly detecting the junction temperature of the IGBTs
  • Low power loss and soft switching
  • Compatible with existing IPM-N series packages
  • High performance and high reliability IGBT with overheating protection
  • Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Symbol Rating Unit Min. Max. DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current DC 1ms DC Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) V DC VDC(surge) VSC VCES IC ICP -IC PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5 Item 200 -40 -20 900 1000 800 1200 150 500 150 Vz Vcc 125 100 AC2.5 3.5 * 3.5 *6 V V V V A A A W V V mA V mA kV N·m N·m *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N·m Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V) Item Symbol Condtion Min. Typ. Max. Unit INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD ICES VCE(sat) VF VCE =1200V input terminal open Ic=75A -Ic=75A – – 1.0 mA – – 2.6 V – – 3.0 V Fig.1 Measurement of case temperature

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V) Item Symbol Condition Min. Typ. Max. Unit Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time (Fig.2) Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm fsw=0 to 15kHz Tc=-20 to 100°C *7 fsw=0 to 15kHz Tc=-20 to 100°C *7 ON OFF Rin=20k ohm VDC=0V, Ic=0A, Case temperature surface of IGBT chips Tj=125°C Tj=25°C Fig.2 Tj=25°C Fig.3 I ccp ICCN Vin(th) VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC R ALM 1.00 1.25 110 150 113 11.0 0.2 1.5 1425 1.35 1.60 8.0 1500 1.70 1.95 125 12.5 1575 mA mA V V V A µs V V ms µs ohm Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V) Item Symbol Condition Min. Typ. Max. Unit Switching time (IGBT) Switching time (FWD) ton IC=75A, VDC=600V toff trr IF=75A, VDC=600V 0.3 - - - - 3.6 - - 0.4 µs µs µs Thermal characteristics(Tc=25°C) Item Symbol Typ. Max. Unit Junction to Case thermal resistance Case to fin thermal resistance with compound Rth(j-c) Rth(j-c) Rth(c-f) - 0.25 - 0.73 0.05 - °C/W °C/W °C/W INV IGBT FWD Item Symbol Min. Typ. Max. Unit DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) V DC 200 - 800 V VCC 13.5 15 16.5 V fSW 1 - 20 kHz - 2.5 - 3.0 N·m - 2.5 - 3.0 N·m Recommendable value *7 Switching frequency of IGBT

Outline drawings, mm Mass : 440g Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection

Characteristics (Representative) Control Circuit 0 5 10 15 20 25 Power supply current vs. Switching frequency Tj=100°C N-side P-side Power supply current : Icc (mA) Switching frequency : fsw (kHz) Vcc=13V Vcc=13V Vcc=15V Vcc=15V Vcc=17V Vcc=17V 0.5 1.5 2.5 12 13 14 15 16 17 18 Input signal threshold voltage vs. Power supply voltage Input signal threshold voltage Power supply voltage : Vcc (V) Tj=25°C Tj=125°C } Vin(on) } Vin(off) : Vin(on),Vin(off) (V) 20 40 60 80 100 120 140 Under voltage vs. Junction temperature Under voltage : VUVT (V) Junction temperature : Tj (°C) 0.2 0.4 0.6 0.8 20 40 60 80 100 120 140 Under voltage hysterisis vs. Jnction temperature Under voltage hysterisis : VH (V) Junction temperature : Tj (°C) 0.5 1.5 2.5 12 13 14 15 16 17 18 Alarm hold time vs. Power supply voltage Alarm hold time : tALM (mSec) Power supply voltage : Vcc (V) Tj=125°C Tj =25°C 100 150 200 12 13 14 15 16 17 18 Over heating characteristics TcOH,TjOH,TcH,TjH vs. Vcc Over heating protection : TcOH,TjOH (°C) Power suppl y voltage : Vcc (V) TjOH TcOH TcH,TjH OH hysterisis : TcH,TjH (°C)

0 0.5 1 1.5 2 2.5 3 Collector current vs. Collector-Emitter voltage Tj=25°C Collector Current : Ic (A) Collector-Em itter voltage : Vce (V) Vcc=13V Vcc=15V Vcc=17V 100 120 0 0.5 1 1.5 2 2.5 3 Vcc=13V Vcc=15V Vcc=17V Collector current vs. Collector-Emitter voltage Tj=125°C Collector Current : Ic (A) Collector-Em itter voltage : Vce (V) 100 1000 10000 0 2 04 06 08 0 1 0 0 1 2 0 Switching time vs. Collector current Edc=600V,Vcc=15V,Tj=25°C Switching tim e : ton,toff,tf (nSec) Collector current : Ic (A) to ff to n tf 100 1000 10000 02 0 4 0 6 0 8 0 1 0 0 1 2 0 Switching time vs. Collector current Edc=600V,Vcc=15V,Tj=125°C Switching tim e : ton,toff,tf (nSec) Collector current : Ic (A) toff ton tf 100 120 00 . 511 . 522 . 53 Forward current vs. Forward voltag e Forward Current : If (A) Forward volta ge : Vf (V) 125°C 25°C 100 1000 0 20 40 60 80 100 120 Reverse recover y characteristics trr,Irr vs. IF Reverse recovery current : Irr(A) Reverse recovery tim e : trr(nSec) Forward current : IF(A) trr125°C trr25°C Irr125°C Irr25°C

0.01 0.1 0.001 0.01 0.1 1 Transient thermal resistance Thermal resistance : Rth(j-c) (°C/W) Pulse width :Pw (sec) FW D IGBT 150 300 450 600 750 900 1050 0 200 400 600 800 1000 1200 1400 Reversed biased safe operating area Vcc=15V,Tj 125°C Collector current : Ic (A) Collector-Emitter voltage : Vce (V) SCSOA (non-repetitive pulse) RBSOA (Repetitive pulse) 100 200 300 400 500 600 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 Power derating for IGBT (per device) Collecter Power D issipation : P c (W ) Case Temperature : Tc (°C) 100 125 150 175 200 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 Power derating for FW D (per device) Collecter Power Dissipation : Pc (W) Case Temperature : Tc (°C) 0 2 04 06 08 0 1 0 0 1 2 0 Switching Loss vs. Collector Current Edc=600V,Vcc=15V,Tj=25°C Switching loss : Eon,Eoff,Err (mJ/cycle) Collector current : Ic (A) Eon Eoff Err 0 2 04 06 08 0 1 0 0 1 2 0 Switching Loss vs. Collector Current Edc=600V,Vcc=15V,Tj=125°C Eon Eoff Err Switching loss : Eon,Eoff,Err (mJ/cycle) Collector current : Ic (A)

Over current protection vs. Junction temperature Vcc=15V Over current protection level : Ioc(A) Junction temperature : Tj(°C)