6MBP75RA060

6MBP75RA060_00 FUJI

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 7

Technical content

Features

• Temperature protection provided by directly detecting the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating protection
• Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Symbol Rating Unit Min. Max. DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current DC 1ms Duty=61.7% Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) V DC VDC(surge) VSC VCES IC ICP -IC PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5 Item 200 -40 -20 450 500 400 600 150 320 150 Vz Vcc 125 100 AC2.5 3.5 * 3.5 *6 V V V V A A A W V V mA V mA kV N·m N·m *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N·m Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V) Item Symbol Condition Min. Typ. Max. Unit INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD ICES V CE(sat) VF VCE =600V input terminal open Ic=75A -Ic=75A – – 1.0 mA – – 2.8 V – – 3.0 V Fig.1 Measurement of case temperature

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V) Item Symbol Condition Min. Typ. Max. Unit Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm fsw=0 to 15kHz Tc=-20 to 100°C *7 fsw=0 to 15kHz Tc=-20 to 100°C *7 ON OFF Rin=20k ohm VDC=0V, Ic=0A, Case temperature, Fig.1 surface of IGBT chips Tj=125°C Tj=25°C Fig.2 Tj=25°C Fig.3 I ccp ICCN Vin(th) VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC R ALM 1.00 1.25 110 150 113 11.0 0.2 1.5 1425 1.35 1.60 8.0 1500 1.70 1.95 125 12.5 1575 mA mA V V V A µs V V ms µs ohm Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V) Item Symbol Condition Min. Typ. Max. Unit Switching time (IGBT) Switching time (FWD) ton IC=75A, VDC=300V toff trr IF=75A, VDC=300V 0.3 - - - - 3.6 - - 0.4 µs µs µs Thermal characteristics( Tc=25°C) Item Symbol Typ. Max. Unit Junction to Case thermal resistance Case to fin thermal resistance with compound Rth(j-c) Rth(j-c) Rth(c-f) - 0.39 - 0.90 0.05 - °C/W °C/W °C/W INV IGBT FWD Item Symbol Min. Typ. Max. Unit DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) V DC 200 - 400 V VCC 13.5 15 16.5 V fSW 1 - 20 kHz - 2.5 - 3.0 N·m - 2.5 - 3.0 N·m Recommendable value *7 Switching frequency of IPM Definition of tsc

Outline drawings, mm Mass : 440g Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection

Characteristics (Representative) Control circuit Power supply current vs. Switching frequency Switching frequency fsw (kHz) 0 5 10 15 20 2512 13 14 15 16 17 18 Power supply voltage Vcc (V) Power supply current Icc (mA) Input signal threshold voltage Vin (ON ), Vin (OFF ), (V) Input signal threshold voltage vs. Power supply voltage Junction temperature Tj (°C)

0 Undervoltage VUVT (V)

Undervoltage vs. Junction temperature Junction temperature Tj (°C) Undervoltage hysterisis VH (V) Undervoltage hysterisis vs. Junction temperature Power supply voltage Vcc (V) Alarm hold time tALM (msec.) Alarm hold time vs. Power supply voltage Power supply voltage Vcc (V) Overheating protection TCOH ,TjOH (°C) OH hysterisis TCH ,TjH (°C) Overheating characteristics TCOH ,TjOH,TCH ,TjH vs. VCC Tj=100°C 20 40 60 80 100 120 140 12 13 14 15 16 17 18 12 13 14 15 16 17 18 N-side Tj=25°C Tj=125°C2.5 2.0 1.5 1.0 0.5 1.0 0.8 0.6 0.4 0.2 20 40 60 80 100 120 140 3.0 2.5 2.0 1.5 1.0 0.5 200 150 100

Collector current vs. Collector-Emitter voltage Collector-Emitter voltage VCE (V) 0 1 2 3 4 Collector current Ic (A) Collector current vs. Collector-Emitter voltage Collector-Emitter voltage VCE (V) Collector current Ic (A) Switching time vs. Collector current Collector current IC (A) Switching time ton, toff (nsec.) Switching time vs. Collector current Collector current IC (A) Switching time ton, toff (nsec.) Forward current vs. Forward voltage Foeward voltage VF (V) Forward current IF (A) Foeward current IF (A) Reverse recovery current Irr (A) Reverse recovery time trr (nsec.) Reverse recovery characteristics trr, Irr, vs. IF 100 0 1 2 3 4 0 1 2 3 4 Edc=300V, Vcc=15V, Tj=25°C 1000 100 Edc=300V, Vcc=15V, Tj=125°C 150 100 0 20 40 60 80 100 120 Tj=25°C 150 100 Tj=125°C 150 100 1000 100 0 20 40 60 80 100 120 0 20 40 60 80 100 120

Transient thermal resistance Pulse width Pw (sec.) 0.001 0.01 0.1 1 0.1

0.01 Thermal resistance Rth(j-c) (°C/W)

Reverse biased safe operating area Collector-Emitter voltage VCE (V) Collector current Ic (A) Case temperature Tc (°C) 0 20 40 60 80 100 120 140 160 350 300 250 200 150 100

0 Collector power dissipation Pc (W )

Power derating for FWD (per device) Case temperature Tc (°C) 140 120 100

0 Collector power dissipation Pc (W)

Switching loss vs. Collector current Collector current Ic (A) 0 20 40 60 80 100 120 Switching loss Eon,Eoff,Err (mJ/cycle) Switching loss vs. Collector current Collector current Ic (A) Switching loss Eon,Eoff,Err (mJ/cycle) 0 20 40 60 80 100 120 140 160 Edc=300V, Vcc=15V, Tj=125°C 0 100 200 300 400 500 600 700 750 675 600 525 450 375 300 225 150 Edc=300V, Vcc=15V, Tj=25°C 0 20 40 60 80 100 120 <=Vcc=15V, Tj 125°C Power derating for IGBT (per device)

Overcurrent protection vs. Junction temperature Junction temperature Tj (°C) Overcurrent protection level Ioc (A) 0 20 40 60 80 100 120 140 200 160 120 Vcc=15V