6MBP75RA-120

6MBP75RA-120 FUJI

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Technical content

Intelligent Power Module ( R-Series ) nn Maximum Ratings and Characteristics

• Absolute Maximum Ratings ( T c =25°C ) Items Symbols Ratings Units Min. Max. DC Bus Voltage V DC 0 900 DC Bus Voltage (surge) V DC(Surge) 0 1000 DC Bus Voltage (short o p erating) V SC 200 800 Collector-Emitter Voltage V CES 0 1200 Inverter Continuous IC 75 Collector 1ms ICP 150 A Current Duty=62.6% -I C 75 Collector Power Dissipation One Transistor P C 595 W Voltage of Power Supply for Driver V CC 0 20 Input Signal Voltage V IN 0 V Z Input Signal Current IIN 1 mA Alarm Signal Voltage V ALM 0 V CC V Alarm Signal Current IALM 15 mA Junction Temperature T j 150 Operating Temperature T OP -20 100 °C Storage Temperature T stg -40 125 Isolation Voltage A.C. 1min. V iso 2500 V Mounting *1 3.5 Terminals *1 3.5 Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5)
• Electrical Characteristics of Power Circuit ( at T j=25°C, V CC =15V ) Items Symbols Conditions Min. Typ. Max. Units Collector Current At Off Signal Input ICES V CE =1200V, Input Terminal Open 1.0 mA INV Collector-Emitter Saturation Voltage V CE(Sat) IC =75A 2.6 V Forward Voltage of FWD V F -I C =75A 3.0 V
• Electrical Characteristics of Control Circuit ( at T j=25°C, V CC =15V ) Items Symbols Conditions Min. Typ. Max. Units Current of P-Line Side Driver (One Unit) ICCP fSW =0~15kHz, T C =-20~100°C 3 18 Current of N-Line Side Driver (Three Units) ICCN fSW =0~15kHz, T C =-20~100°C 10 65 On 1.00 1.35 1.70 Off 1.25 1.60 1.95 V Input Zener Voltage V Z R IN =20k Ω 8.0 Over Heating Protection Temperature Level T COH V DC =0V, I C =0A, Case Temp. 110 125 Hysteresis T CH 20 IGBT Chips Over Heating Protec. Temp. Level T jOH Surface Of IGBT Chip 150 Hysteresis T jH 20 Inverter Collector Current Protection Level IOC T j=125°C 113 A Over Current Detecting Time tDOC T j=25°C 10 µs Alarm Signal Hold Time tALM 1.5 2 ms Limiting Resistor for Alarm R ALM 1425 1500 1575 Ω Under Voltage Protection Level V UV 11.0 12.5 Hysteresis V H 0.2
• Dynamic Characteristics ( at T C =T j=125°C, V CC =15V ) Items Symbols Conditions Min. Typ. Max. Units tON IC =50A, V DC =600V 0.3 Switching Time tOFF 3.6 µs tRR IF =50A, V DC =600V 0.4
• Thermal Characteristics Items Symbols Conditions Min. Typ. Max. Units R th (j-c) Inverter IGBT 0.21 Thermal Resistance R th (j-c) Diode 0.47 °C/W R th (c-f) With Thermal Compound 0.05 nn Outline Drawing Screw Torque V IN( th )Input Signal Threshold Voltage V V Nm mA V

Drivers include following fun c tions À Short circuit protection circuit Á Amplifier for driver  Undervoltage protection circuit à Overcurrent protection circuit Ä IGBT Chip overheating protection

V CC =17V V CC =15V V CC =13V V CC =17V V CC =15V V CC =13V P-Side N-Side Power Supply Current vs. Switching Frequency T j=100°C Power Supply Current : I CC [mA] Switching Frequency : fsw [kHz] 12 13 14 15 16 17 18 0,0 0,5 1,0 1,5 2,0 2,5 T j=25°C T j=125°C V in(on) V in(off) Input Signal Threshold Voltage vs. Power Supply Voltage Input Signal Threshold Voltage : V in(on) , V in(off) [V] Power Supply Voltage : V cc [V] 20 40 60 80 100 120 140 Under Voltage vs. Junction Temperature Under Voltage : V UV [V] Junction Temperature : T j [°C] 20 40 60 80 100 120 140 0,0 0,2 0,4 0,6 0,8 1,0 Under Voltage Hysterisis vs. Junction Temperature Under Voltage Hysterisis : V H [V] Junction Temperature: T j [°C] 12 13 14 15 16 17 18 0,0 0,5 1,0 1,5 2,0 2,5 3,0 T j=25°C T j=125°C Alarm Hold Time vs. Power Supply Voltage Alarm Hold Timen : t ALM [ms] Power Supply Voltage : V cc [V] 12 13 14 15 16 17 18 100 150 200 T cH ,T jH T cOH T jOH Over Heating Characteristics T cOH , T jOH , T cH , T jH vs. V cc Over Heating Protection : T cOH , T jOH [°C] Over Heating Hysterisis : T cH , T jH [°C] Power Supply Voltage : V cc [V]

V CC =17V,15V, 13V Collector Current vs. Collector-Emitter Voltage T j=25°C Collector Current : I C [A] Collector-Emitter Voltage : V CE [V] 0 1 2 3 4 100 150 V CC =17V,15V, 13V Collector Current vs. Collector-Emitter Voltage T j=125°C Collector Current : I C [A] Collector-Emitter Voltage : V CE [V] 0 20 40 60 80 100 120 140 100 1000 t f t off t on Switching Time vs. Collector Current V DC =600V, V CC =15V, T j=25°C Switching Time : t on , t r , t off , t f [ns] Collector Current : I C [A] 0 20 40 60 80 100 120 140 100 1000 t f t off t on Switching Time vs. Collector Current V DC =600V, V CC =15V, T j=125°C Switching Time : t on , t r , t off , t f [ns] Collector Current : I C [A] 0 1 2 3 4 100 120 25°CT j=125°C Forward Voltage vs. Forward Current Forward Current : I F [A] Forward Voltage : V F [V] 0 20 40 60 80 100 120 140 E rr E off E on Switching Loss vs. Collector Current V DC =600V, V CC =15V, T j=125°C Switching Loss : E on , E off , E rr [mJ/cycle]

Transient Thermal Resistance Thermal Resistance : R th(j-c) [°C/W] Pulse Width : P W [sec] 0 200 400 600 800 1000 1200 1400 150 300 450 600 750 900 1050 RBSOA (repetitive pulse) SCSOA (non-repetitive pulse) Reverse Biased Safe Operating Area V CC =15V, T j< 125°C Collector Current : I C [A] Collector-Emitter Voltage : V CE [V] 0 20 40 60 80 100 120 140 160 100 200 300 400 500 600 Power Derating For IGBT (per device) Collector Power Dissipation : P C [W] Case Temperature : T C (°C) 0 20 40 60 80 100 120 140 160 100 150 200 Power Derating For FWD (per device) Collector Power Dissipation : P C [W] Case Temperature : T C (°C) 0 20 40 60 80 100 120 140 E rr E off E on Switching Loss vs. Collector Current V DC =600V, V CC =15V, T j=25°C Switching Loss : E on , E off , E rr [mJ/cycle] Collector Current : I C [A] 0 20 40 60 80 100 120 140 E rr E off E on Switching Loss vs. Collector Current V DC =300V, V CC =15V, T j=125°C Switching Loss : E on , E off , E rr [mJ/cycle]

Over Current Protection vs. Junction Temperature V cc =15 V Over Current Protection Level : I oc [A] Junction Temperature: T j [°C] nn Outline Drawing Weight: 440g Specification is subject to change without notice October 98