6MBP75NA060-01 FUJI

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; | SPECIFICATION _Device Name: IGBT-IPM Type Nema; BMBP75NA060-01 2h Spec. No. : MS6M0276. ‘ Fuji Electric Co.,Ltd. Matsumoto Factory [DRAWN [Gh=27~ "7b W.Kawatani Fuji Electric Co.,Ltd. fbisemo276 a 2222 sIMSOMO276 insh H04-004-07

i Revised Records Classi- Applied Date fication | Ind. Content date Drawn |Checked |Approved . Issued | j neal ip Hen, -2y-'gg | enzeiment | — | ————— date \\ Terese 7. i256 .{s [4 Fuji Electric Co.,Ltd. i|Ms6moz76 2/15 Fo ] H04-004-05

  1. Outline Drwing Ree Unit : mm SB :mm 10921 a f 95403 j 13.8203 674 ! 22 | 327203 | 503 0s 504 DS SOQ DS, 52s 25 EL | oF Te PCIe; tt Ih 2 mw, 1 & 1 Ey 16 — 8} | | 3/3] 121} a ee Ao S)2) 07 ji") Wl =~ | ;—_T g = =| = W Iv uU sees i ; as = 4g £53e2 y ' 2238: 33 wun j | ® T | T Fuji Electric Co.,Ltd. gIMS6M0276 ans T H04-004-03

2 Block Diagram

VecU @ | P oo | VinU @ ’ Pre-Driver ra GNDU @ U VecVE vu A GNDVe TL 3 Sy V2Z\\ GNDW @ Ow Veco @ A 3yE3 Vinx & - Pre-Driver IN Bis? Vz Ease 2 Boeke VinY @ | Pre-Driver [——~ IN Beds Vinz ® (| Pre-Driver KS -e2e2 OB Nc @® [| ON lm Temperature sensor Raum Over heating protec- “A ALM @ poe circuit po] Pre-Drivers include following functions @ Short Circuit Protection Circuit @ Amplifier for Driver ; @Under Voltage Lockout Circuit @ Over current Protection Circuit ss: . J i Fuji Electric Co.,Ltd. fF MS6M0276 4nsf ] HO4-004-03

  1. Adsclute Maximum Ratings (at Te=257C unless otherwise specified): | Items Symbols Ratings Units Min. _|Max. DC Bus Voltage vec | 0 DC Bus Voltage (surge) Voc(surce) ie} S00 DC Bus Voltage (short operating) Vsc 200 | 400 Vv Collector-Emitter Voltage Vces ie) 600 Vv 1 oC Ic — | 75 N [Collector Current 1mS | Icp | —_— | 150 | A Vv Duty=61.7% -Ie = 75 A Collector Power Dissipation One Transistor Pc Junction Temperature Tj —_ | 150 Tc Input Voltage of Power Supply for Pre-Driver Veco 1 0 | 20 | Vv Input Signal Voltage | Vin 2 | ie) Vz Vv Input Signal Current Alarm Signal Voltage Vai 33 ie} Vec Vv Alarm Signal Current lam 3x4 | — | 15 | ma Storage Temperature | Tstg | -40 | 125 c 33 zs Operating Case Temperature (Fig.1) | Tor -20 | 100 Ke} Bast Isolation Voltage (Case-Terminal) Viso x5 | — {AC2.5|_ kV es3fe Note 31 Vcc shall be applied to the input Voltage between terminal No. 3 and1, 53222 6 and 4,9 and7, 11 and 10. 83225 32 Vin shall be applied to the input Voltage between terminal No. 2 and1, Bsa55 5 and 4, 8 and 7, 12131415 and 10. 22255 3% 3 Vato shall be applied to the Voltage between terminal No. 16 and 10. geet > 4 lam shall be applied to the input current to terminal No. 16. 25338 5 50Hz/60Hz sine wave 1 minute. 35333 #2322 4 pmemee e) (©) fal isi fei /e) Fig.1 Measurement of case temperature EI Fuji Electric Co.,Ltd. MS6M0276 9 sms 7 | HO4-004-03

4.1 Electrical Characteristics of Power Circuit (at Tc=Tj=25°C,Vcc=15V)

Conditions | Min. | Typ. | Max. [Units Collector Current | Ices mA | | at off Signal Input | im : : V | Saturation Voltage LY | Forward Voltage of FWD | Ve -Ic=75A

4.2 Electrical Characteristics of Control Circuit (at Tc=Tj=25,Vec=15V)

Side Pre-Driver (One Unit) Duty=50% — 7 17 mA Power Supply Current of N-Line fsw=15kHz Side Three Pre-Drivers and Iccn |Duty=S0% —_ | 21 51 mA Protection Circuits sus Input signal Threshold Voltage Vin(ox) J|ON 1.00 | 1.35 | 1.70 Vv ae _ Vin( or) |OFF | 1.25 | 1.60] 1.95 2722_| [Zener Voltage [ove [ts [77 [Tv 2225 | |Over Heating Protection(OH) | Tou [Loc ovsenoa 100 | —|i2s] = iefe Level Case Temperature Es 32 5 Protection(OC) Level INV. Collector Current 3£223/| Level FES22 ll alarm SignalHold Time | tM Delay Time of Short Circuit tsc Protection (Fig.3) Limiting Resistor for Alarm Ram

36 Switching frequency of IPM

4.3 Dynamic Characteristics (at Tc=Tj=125°C,Vec=15V)

Switching Time ton ers PES rig. toff _ |Voc=300V | — | —] 36 | us | Switching Time (FWD) tr [i=75A,Voc=300v [| — | —] 400 | as | Fuji Electric Co.,Ltd. AY S6M0276 = ens = H04-004-03

ALM : Fig.2 : Definition of OC Delay Time : tse : rs!

232 FI Alarm disable Alarm disable ‘ Alarm enable

Hi Fig.3 : Definition of tsc : H/\\ fire | Collector Current (Ic) } : : 10% ton tof ! Fig.4 : Definition of switching time [oT Fuji Electric Co.,Ltd. MS6M0276) ans l H04-004-03

a 5. Thermal Characteristics (Te=25) Junction to Case |" iGaT |RthG-c) | — | — | 0.39 | c/w Thermal Resistance 6.Mechanical Characteristics Items Min. Typ. Max. | Units Screw Torque Terminal(MS) | —- | — | 3.5 Nem 7.Recommendable Value DC Bus Voltage | vec | 200 |— | 400] v seee Operating Power Supply Voltage | Vec | | 13.5] 15 |"*° Vv Fy ae: Range of Pre-Driver Pree Switching frequency of IPM | few | 1 [—T] 20 | kHz 22222] [Screw Torque [Mounting (MS) ieee Terminal (M5) | —_| aogee Fuji Electric Co.,Ltd. ANS 6M0276 ans i I H04-004-03

a 8. Packing and labeling Lebel ZO weight 5.5kz (Max.) | | oe | products 1Cpes (Max.) o 2 = LAH i eS & 260 wean typename Lot.No PMIP6O7) H the number t_— Pay | 247 222 _| 9. Storage and transportation notes (RE. BBLO=S BR) 233 g2 : The IGBT-IPM should be stored at a standard temperature of 5 to 35 ‘C and humidity of £3282| RIBREMBELW. (5~35°C, 45~75%)

233 Ee - Store modules in a place with few temperature changes in order to avoid condensation

bs ie: on the module surface.

22285 PMABEMLOSE ce, (SV¥a-WRAMBRLENTE)

232 3 g - Avoid exposure to corrosive gases and dust. Bogs BSenzoReism, BEOSWIBMERISTE. 2s aE - Avoid excessive extermal force on the module. 232]2| NACHE MMSEUALSCTHCEETSCE. - Store modules with unprocessed terminals. EVa-NWOBFILRMLORETRETSCE. - Do not drop or otherwise shock the modules when transporting. NAOBBRICHRESALU, BPFECKV LANCE, 10. Applicable category (AaB) This specification is applied to IGBT-IPM named 6MBP75NA060-01. AAA Et. IGBT-IPM 6MBP75NA060-01 [CAT S. Fuji Electric Co.,Ltd. sMS6EMO0276 gis Co HO4-004-03

  1. Characteristic (Representative) SEA-7 (RRS) 11-1.Control Circuit aan Power suegly current vs. Switching’ frequency Input signal threshold voltage coe oe os vs. Powar sussly voltage MEER 21 i | Vezet3¥ 2a i j j i i =| _ z2.. eb vit pee <— - 3515 ——_+ errs ee é i z§ : i ' 219 i a ee Fae emer verat3y_ 3 o5 | _ | po i H i 0 | i . 2 i . i 5 3 19 is 20 25 12 13 is 15 16 7 13 Swinzhing frecvensy + fsw(Hz) power suscly velage : Vee (V) Sgr Under voltage vs. Junction temperature Under voltage hysterisis vs. Junction temperacure Egon r H > + J 2232, ee 2 f i 22225] sf i Be a eseiz| 3 fo 2 22253] > gb 8 22222] 5 | | S02 en ne zee Ps aed 2° 3355 L . . ___] a Pegse °25 40 60 50 woo 120°~—«140 °20 20 30 80 100. 120~=« es de dencuen temperature : Ty (T) duncuen temperature : Tj (C) Gver eating characteristics Alarm hold time vs. Power supply voltage TOH,TH vs. Vee Ce a ae 1290 Lt Trow__1 i Bes Tito = too nce i t po | 2 ! : —1j-25 + ee prepregs i i i a] 5 oad f fd £5 60 _— - 31 4 : + — PS i i : peeps Sas WO nS ee ee i a a — E : my ey i 25 poe nt 08 ! Hl Leaf ne 8 20; 5 TH 2 ® Pe py ta ve) " ® * - 7 1s 16 7 18 ower supply voltage : Vee! y veka Power supoly voltage : Vee (V) 2 = Fuji Electric Co.,Ltd. SIMS6M0276 wns to z H04-004-03

11-2.Invarter AYK-9B Collector currant vs. Callector-Emitter veltage Collector current vs. Collector-Emitter voltage Tje25S . Tjsi25o C—O VS Sjs0) pt ! Sasol i r i i > aos! i i i a el i Hi i d 1 i

0 Te QO

t) i 2 3 4 3 [') 1 2 3 4 3 Collector-Emitier voltage : Vee (¥) Collector-Emitter voltage : Vee (¥) - Switching time vs. Collector current Switching time vs. Collector current 3gER Edo=300V,Veo=15V,Tj=25T _. Eden 300V, Vere $V, Tis 25ST Ba. a r | ges | i . . ! > 4 : : . : voit | 232e5 2 i 50owcS>0S = Se ae SueBel SF ol 2 V0 ri 32223 0 2 40 #0 € 100 120 140 o 2 40 6 8 100 120 140 Reverse recovery characteristics Forward current vs. Forward voltage ters 5 7 [autumn bed BE | ' | i : | saase | ogg PRbseten PE | | 0 ce fomnf 2: A an " 2 A { ! is 25 i Forward voltage : VF (V) Forward current : IF (A) T oe . . i Fuji Electric Co.,Ltd. MS6M0276 uns H04-004-03

«xs Reversed Sigsed safe cceraurg area Transient thermal resistance ses Versi 5V.TjS 125% > rr a | a a zg i i i FWO_| ap Bo eee i j | | i H = poo : , : 9828 2 | | i - | | fl 0.01 ee ol i | i : i j 0.001 Oo se wetn wow (280). : ES “se wasn te tees Collestar-Emictar velvage : Vee (Vv) Power derating for IG3T Power derating fer Fv (per device) | (per_ device) 22388) § [Seca Bp (Epa ppg 22382] 2 190 (EEE aisedtctseeteecaron 2 aot : * * : B cer3? ° EEE EES EESSSSn piiitayminmgmn ° 7 a RR 353 °o a a0 gO 89 100 «120:«1s0”«180 0 20 40 8080 HOO 120149180 Soest Case Temperature : Te () Case Temperature : 12 (T) 30552 Switching Loss vs. Collector Current Switching Loss vs. Collector Current

10 Ede=300V,Vecs15V,Tjx25T 10 Edc=300V,Vec=15V,Tj=125C

cs a a | 2 oes ce | Z, ap eet 5 i . i 0 20 40 60 80 100 120 0 20 40 60 80 100 120 Collector Current : Ie (A) Collector Current : fe (A) Fuji Electric Co.,Ltd. MS6mMo276 2/15 = H04-004-03

Over Current Protection vs. Juncuen temperature s20 Vere 5¥ ° ol i i _ i ] co) 22 40 60 20 100 120 140 Jurction temzeracure : Tj () Ts Fuji Electric Co.,Ltd. sMS6M0276. asns FE oS — 0400403

12.Example of applied circuit (SABBS) geen ———» AC200V > _, 3} bn i [ui gy Le = wie = IPM P ro : a U 202 a ot CTS SS eA | Lona S , eR - M m) Le ld el a | — = \\4 g | 2cKa 4 lw crt SS wor Loa a S LS Sa oe 3 = . IN rd | 20«Q veh A SS Dio a 2R5SE Cae SS we ou 22882 bon A & e885 ‘ I sais! veil 4 FaSte oC 2 - The wiring between opto-coupler and input terminal of IPM should be shorter as much as possible. The stray-capacitance between primary and secondary side of opto-coupler should not be increased by pattern lay-out. FREAPSEPMOANBFMERIS, TESEIFEK LRFATZIO 1K: 2: RMOSHSRE BME HEUNS-VYLATIRELTHREM. + Capacitor should be installed to VCC-GND terminal of high-speed opto- coupler closely as much as possible. BR AA TIO Vec-GNDAMICld, IVF LYSE TS SKIFMEL TRU MITTREW. + Use high-speed opto-coupler : tPLH,tPHL S 0.8us, high CMR type. (Example : HCPL-4504) BR RATS tPLHtPHL S 0.8 us, SCMRYTPFECHAPEL. (HI) HPCL-4504) + Low-speed opto-coupler : CTR 2 100% EMR bhALS:CTR2 100% _ Ts = Fuji Electric Co.,Ltd. sIMS6MO276 i4ns— ! H04-004-03

a + Each power supply for drive circuit should not have transient voltage fluctuation. Four power supplies which are isolated should be supplied incividually. SSP SRRGBSREEHOL SW, SRLKDDE 4 BSUICLTRELTI SY, + The DC bus line to the P-N terminal should have lower inductance as much as possible, such 2s connecting capacitor to P-N terminal, in order to reduce surge voltage. PNR OBRSISS TE SKIFEL VIDS VAICL, PNBFMICIY FY TERRI SORCLTT— VRBEZEALTIEM, - In order to avoid noise from AC line, connect capacitor (about 4.7uF) between three-phase line and earth. ACSA YPSO/ 4 XABASRCKD, SRSR-AMMIC4.7FEROIY TYG EBRUTFEMW, + Do not connect N-terminal of main circuit to ground (GND) of input circuit. ANBBOYSYK (GND) E=RBNBFS IPMOAGITERLENTTFEM, - In case of using connector for connection to control terminal, it must be Au-plated electrode and 2.54mm of pitch. SHARE CORR IRIVERVSRE. SA vy FBS 254mm CyFONODECRATES, + When capacitor is connected between input and GND terminal, pay attention to longer delay time after signal inputted to primary side of opto-coupler. ete ANMSF-GNDMIC AVF YS EIBATOEMEATSIURADIES CNT SHS RAMR<S VET 2233 DCIEBPFE. Z2322 22225 | Fuiletecticcotts —|[Ms6mo276 wns | H04-004-03