6MBP50VBA060-50 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 8

Technical content

Features

  • Temperature protection provided by directly detecting the junction temperature of the IGBTs
  • Low power loss and soft switching
  • Compatible with existing IPM-N series packages
  • High performance and high reliability IGBT with overheating protection
  • Higher reliability because of a big decrease in number of parts in built-in control circuit

IGBT Modules6MBP50VBA060-50 http://www.fujielectric.com/products/semiconductor/ Electrical Characteristics (Tj=25ºC, V CC=15V unless otherwise specified) Items Symbol Conditions Min. Typ. Max. Units Inverter Collector Current at off signal input ICES VCE=600V - - 1.0 mA Collector-Emitter saturation voltage VCE(sat) IC=50A Terminal - - 2.00 V Chip - 1.40 - V Forward voltage of FWD VF IF=50A Terminal - - 2.30 V Chip - 1.80 - V Switching time ton VDC=300V, Tj=125ºC Ic=50A 1.1 - - µs toff - - 2.1 µs trr VDC=300V IF=50A - - 0.3 µs Supply current of P-side pre-driver (per one unit) Iccp Switching Frequency= 0-15kHz Tc=-20~110ºC - - 11 mA Supply current of N-side pre-driver Iccn - - 34 mA Input signal threshold voltage Vinth(on) Vin-GND ON 1.2 1.4 1.6 V Vinth(off) OFF 1.5 1.7 1.9 V Over Current Protection Level IOC Tj=125ºC 75 - - A Over Current Protection Delay time tdOC Tj=125ºC - 5 - µs Short Circuit Protection Delay time tSC Tj=125ºC - 2 3 µs IGBT Chips Over Heating Protection Temperature Level TjOH Surface of IGBT Chips 150 - - ºC Over Heating Protection Hysteresis TjH - 20 - ºC Under Voltage Protection Level VUV 11.0 - 12.5 V Under Voltage Protection Hysteresis VH 0.2 0.5 - V Alarm Signal Hold Time tALM(OC) ALM-GND Tc=-20~110ºC 1.0 2.0 2.4 ms t ALM(UV) VCC 10V 2.5 4.0 4.9 ms tALM(TjOH) 5.0 8.0 11.0 ms Resistance for current limit RALM 960 1265 1570 Ω Thermal Characteristics (T C = 25ºC) Items Symbol Min. Typ. Max. Units Junction to Case Thermal Resistance (*10) Inverter IGBT Rth(j-c)Q - - 0.74 °C/W FWD Rth(j-c)D - - 1.27 °C/W Case to Fin Thermal Resistance with Compound Rth(c-f) - 0.05 - °C/W Note *10: For 1device, the measurement point of the case is just under the chip. Noise Immunity (V DC=300V, VCC=15V) Items Conditions Min. Typ. Max. Units Common mode rectangular noise Pulse width 1μs, polarity ±, 10 minute Judge : no over-current, no miss operating ±2.0 - - kV Recommended Operating Conditions Items Symbol Min. Typ. Max. Units DC Bus Voltage VDC - - 400 V Power Supply Voltage of Pre-Driver VCC 13.5 15.0 16.5 V Arm shoot through blocking time for IPM's input signal tdead 1.0 - - µs Screw Torque (M4) - 1.3 - 1.7 Nm

http://www.fujielectric.com/products/semiconductor/ Block Diagram Pre-drivers include following functions 1. Amplifier for driver 2. Short circuit protection 3. Under voltage lockout circuit 4. Over current protection 5. IGBT chip over heating protection Vcc VinX GND VinY VinZ ALM VccV GNDV VccU GNDU VinU VinV VccW GNDW VinW ALMU ALM V ALM W Pre-Driver Pre-Driver Pre-Driver Pre-Driver Pre-Driver Pre-Driver RALM RALM RALM RALM U V W P N

IGBT Modules6MBP50VBA060-50 http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Power supply current vs. Switching frequency Tj=25ºC (typ.) 0 5 10 15 20 25 12 13 14 15 16 17 18 Power supply current : Icc [mA] N-side P-side Vcc=17V Vcc=15V Vcc=13V Vcc=17V Vcc=15V Vcc=13V Switchig frequency : fsw [kHz] 0 20 40 60 80 100 120 140 Under voltage vs. Junction temperature (typ.) Junction temperature : Tj [ºC] Alarm hold time vs. Power supply voltage (typ.) Power supply voltage : Vcc [V] 12 13 14 15 16 17 18 Under voltage : VUV [V]Alarm hold time : TALM [msec] tALM(TjOH) tALM(OC) 2.5 1.5 0.5 Input signal threshold voltage : Vinth (on), Vinth (off) [V] Input signal threshold voltage vs. Power supply boltage (typ.) Vinth (off) Tc=25~125ºC Vinth (on) Power supply voltage : Vcc [V] 0.8 0.6 0.4 0.2 0 20 40 60 80 100 120 140 12 13 14 15 16 17 18 Under voltage hysterisis vs. Junction temperature (typ.) Under voltage hysterisis : VH [V] Junction temperature : Tj [ºC] 200 150 100 Over heating characteristics TjoH, TjH vs. Vcc (typ.) Over heating protection : TjoH [ºC] OH hysterisis : TjH [ºC] Power supply voltage : Vcc [V] TjoH TjH

http://www.fujielectric.com/products/semiconductor/ Collector current vs. collector-Emitter voltage Tj=25ºC [Chip] (typ.) Collector current : Ic [A] Collector-Emitter voltage : VCE [V] 100 100 100 Collector current vs. collector-Emitter voltage Tj=125ºC [Chip] (typ.) Collector-Emitter voltage : VCE [V] Forward current vs. Forward voltage [Chip] (typ.) Forward voltage : VF [V] Collector current : Ic [A]Forward current : IF [A] Collector current : Ic [A] Collector current vs. collector-Emitter voltage Tj=25ºC [Terminal] (typ.) Collector-Emitter voltage : VCE [V] Collector current vs. collector-Emitter voltage Tj=125ºC [Terminal] (typ.) Collector current : Ic [A] Forward current vs. Forward voltage [Terminal] (typ.) Forward current : IF [A] Forward voltage : VF [V] Vcc=17V Vcc=15V 0 0.5 1 1.5 2 2.5 Vcc=17V Vcc=15V Vcc=13V Vcc=13V 0 0.5 1 1.5 2 2.5 Vcc=17V Vcc=15V Vcc=13V 0 0.5 1 1.5 2 2.5 Collector-Emitter voltage : VCE [V] 0 0.5 1 1.5 2 2.5 100 100 Tj=25ºCTj=125ºC 0 0.5 1 1.5 2 2.5 100 0 0.5 1 1.5 2 2.5 Vcc=17V Vcc=15V Vcc=13V Tj=25ºCTj=125ºC

IGBT Modules6MBP50VBA060-50 http://www.fujielectric.com/products/semiconductor/ Switching Loss vs. Collector Current (typ.) VDC=300V, Vcc=15V, Tj=25ºC 0 20 40 60 80 Switching loss : Eon, Eoff, Err [mJ/cycle] Eon Eoff Err Eon Eoff FWD IGBT Err Collector Current : Ic [A] 200 150 100 0 200 400 600 800 Reversed biased safe operating area Vcc=15V, Tjɹ 125ºC [Main Terminal] (min.) Collector-Emitter voltage : VCE [V] Power derating for IGBT (max.) [per device] Case Temperature : Tc [ºC] 300 200 100 0 50 100 150 Collector current : IC [A]Collector Power Dissipation : Pc [W] Switching loss : Eon, Eoff, Err [mJ/cycle] Switching Loss vs. Collector Current (typ.) VDC=300V, Vcc=15V, Tj=125ºC Collector Current : Ic [A] 0.1 0.01 0.001 0.01 0.1 1 10 0 50 100 150 Transient thermal resistance (max.) Thermal resistance : Rth(j-c) [ºC/W] Pulse width : Pw [sec] Power derating for FWD(max.) [per device] Collector Power Dissipation : Pc [W] Case Temperature : Tc [ºC] 0 20 40 60 80 RBSOA (Repetitive pulse) 300 200 100

http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) VDC=300V, Vcc=15V, Tj=25ºC 0 20 40 60 80 0 20 40 60 80 0 20 40 60 80 Switching time : ton, toff, tr [nsec] ton toff tf 10000 1000 100 Reverse recovery characteristics (typ.) trr, Irr vs. If Forward current : IF [A] Reverse recovery current : Irr [A] Reverse recovery time : trr [nsec] 10000 1000 100 Switching time : ton, toff, tr [nsec] Switching time vs. Collector current (typ.) VDC=300V, Vcc=15V, Tj=125ºC ton toff tf Collector current : Ic [A]Collector current : Ic [A] 200 150 100 0 20 40 60 80 100 120 140 Over current protection vs. Junction temperature (typ. ) Vcc=15V Over current protection level : Ioc [A] Junction temperature : Tj [ºC] 1000 100 trr Tj=125ºC trr Tj=25ºC Irr Tj=125ºC Irr Tj=25ºC Outline Drawings, mm

IGBT Modules6MBP50VBA060-50 http://www.fujielectric.com/products/semiconductor/ WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

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