6MBP50RU2A120 FUJI

Document overview

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Technical content

Device Name: IGBT- IPM £238 PEE i Type Name : 6MBP50RU2A120 2 ES Spec. No. : MS6M 01048 Hil | g2325 | siges 22823 pgs 6552 > te 5 . DATE |, News row Fuji Electric Device Technology Co.,Ltd, DRAWN Su, ->2 - ob | [Auala-tles CHECKED Ty =23 “nb Medel _| . MSeMo1048 1 cnecked) = - = [ELL dn [Ze yA 22 Fo HO4~004-07b

Date Content Drawn | Checked | Checked | Approved fication date Issued Han-23- bb| Enactment | pated Ny A date |N* Watt Korat \\7 peal £eB5 Pi yf ft | EE gage rege caer ea: ahs 2338 $2238 feadg ge58) agree EEE aiges 222iu Fuji Electric Device Technology Co.,Ltd. g} MS6M 01048 29 EE Bj H04-004~-03a

Package type : P611 10941 95 403 "| 13, 8403 67.4 | 5. gto. 15 ia 0.15 He 2. 5420)t a [ I Ht un e ?P Py TT] RILEESITILELSIA eeselb| | O 1 4 7 10 16 — Ley 1] B to poe $235 al, Base Gy il N ee53 ky i ease { W v U Zags oI mea = ol © ‘S) s53e i 2538 0.5] 24 26 26 B32e ° 7 ef2L 22538 16-00.64 2-62.5 ssesi casts SMS. ————

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g3832 \\ } i o ate se UE UE ol} syle : a 26228 au L ‘i? a) pels af =z ga o Sj SOA 1200V JAPAN 0 Sebae > ie eg Lot No.“ 23322) Easse Indication of Lot Wo. §=OOOOD TTS dered to, in monty Manufactured month (Jan, ~Sep. :1~9, Oct. :0, Nov. :N, Dec. :D) i Last digit of manufactured year | 9.22403 2, $440.1 2.54401 | 222 o 62.5 11 = “RTs Be +454 = 7 Ty (od txt. 5) s F cage S: lain u = sic ge Details of control terminals Dimensions in mn Fuji Electric Device Technology Co.,Ltd. g) MS6M 01048 ‘99 i 6 : i H04-004-03a

  1. Pin Descriptions .

2.1 Main circuit

| NWNesative input suppb votase =| [P [Posive input supply vote. =| [8 roconact CC*d

2.2 Control circuit

Fo | vec flowside supp votass = F@ [Vino8 |roconact Ss SSC=*d [@ [AL flowside alam signaloupat =| | H04-004-03a

  1. Block Diagram . ovecU Po Pre-Driver ovecV anv pL v, ovecW.

3 He i a

2353 GNDW LF Ww

Bees ° ° Beas >SEe gees | {| ega2 saee 4 geese HEP wr | | TP £6320 ages ge ges Zatss oving S Faber Gers Litt MN, Pre-drivers include following functions RALM || roe = 1. Amplifier for driver ALM Te Over Heating 2. Short circuit protection 45k Protection Circuit 3. Under voltage lockout circuit 4, Over current protection 5. IGBT chip over heating protection Fuji Electric Device Technology Co.,Ltd. g MS6M 01048 “99 2 : H04-004-03a

  1. Absolute Maximum Ratings : Tc=25°C unless otherwise specified. Bus Voliage Bo ve fo | om | v (between terminal P and N) surge | Vocreurgey| 0 | 1000 | v_ | [GoteciorEmiverVotage 1 | ves |_| 1200 | _v_| : poe g ee __[Cetiector Power Dissipation [One transistors | Pc | - | 300 | w_| Collector Current jc ff te g lime | ee | - | - [a 5 [Forward GurentofDigs —=SC~wCi |] Cd | z 9 : 28 Notes Fd 23 BE “1: Vces shall be applied to the input voltage between terminal P-U(V, WW) or U(V, W, B)-N. *2: Duty=125°C/Rth(-c)D/(lexVF Max.) x 100 *3: Pco=125°C/Rth(j-c)Q= 300W (Inverter) *4: Voc shall be applied to the input voltage between terminal No.3 and 1, 6 and 4, 9 and 7, 11 and 10. | *5: Vin shall be applied to the input voltage between terminal No.2 and 1, 5 and 4, 8 and 7, 12~15 and 10. *6: VALM shall be applied to the voltage between terminal No.16 and 10. *7: |ALM shall be applied to the input current to terminal No.16. *8: Terminal to base, 50/60Hz sine wave 1min. . 3 6. | 2 : H04-004-03a
  1. Electrical Characteristics . Tj=25°C, Vec=15V unless otherwise specified.

5.1 Main circuit

a at off signal input Vin terminal open. s Collector-Emitter Vegisat) |IC=50A [terminal | - | 19 | 22 | v_ | oe Forward voltage of FWD | VF |-c-50A [Terminal | - | 22 | 25 | v_| ee A ee ee Collector Current lces |Vce=1200V ee ee 2 i 5 ao saturation voltage Fig.4 jcrip | - | - | - | v | Hy bemoe [eee | [oT ceat. Reverse recovery time 0.3 us 22533 IF=50A_ Fig.1,6 aa | 5.2 Control circuit 3 a] ae pre-driver (per one unit) = 0-15kHz rabse pre-driver Fig.7 Input signal threshold voltage [inth(on)|Vin-ND | on| 1.00 | 135 | 170 | v | ie = ie ee eee lnoazonerVotege | ve _[Rnmama | _- [ea | - |v Alarm Signal Hold Time iALM [to=25'c] - | 20 | - | ms | Ss | 2 ‘ H04-004-03a

5.3 Protection Circuit (Vec=15V) . od Over Current loc [Tj=125°C | 7 | 150] - | a | poms ae | yee overcuree een Sosyine | wee eww | fcPonsiononmyene | ww firwwre ree | [|e | w | IGBT Chips Over Heating TjOH |Surface of 150 ey Lwrieaiaronsenimes [| | pa | pe Case Over Heating TcOH |VDC=OV, Ic=0A 110 125 °c Se lnirvomgePrinise [ww | we | [me v1 liner votpe Prien eas | wi | ide Pas] - Pv ; u ; 6. Thermal Characteristics (Tc = 25°C) EES43) °9: For tdevice , Case is under the device SES55 38 re 7. Noise Immunity (Vdc=300V, Vec=15V, Test Circuit Fig 9.) a8 = 33 rectangular noise jJudge:no over-current, no miss operating Common mode Rise time 1.2us,Fall time SOusinterval 20s,10 times} £5.0 kV Moone huwmecamnmneme || ||” |] 8. Recommended Operating Conditions | a cwwtowiews) as 8 pe | 9, Weight ea eee Sw we H04-004-03a

Vinthvon) Vinth(off) oft Input signal i ee ee ‘ tr ' i re! i 00% y ; 1 90% i : Collector current ' | : i\\, a i 1 \\10% 1 i r | pith fon, ! 1 tof ! i 1 t Figure1. Switching Time Waveform Difinitions. . off Nin \\ (lowside input) on \\ Vge t \\ {inside IPM) ate off : pu) —— ELE norma J £233 {inside IPM) : | normal SaBe i \\ 1 1 i Bees (alarm output) alarm ogS2 tALM>max. 2 tALM>max. @) —_tALM=2ms(typ.) @) 353 fault: Over-current, Under-voltage or Over-heat sa28 Bese 2 3 3 3 Figure2. Input/Output Timing Diagram. 2322 g 5 £35 Necessary conditions for alarm reset (refer to @ to @ in figure2. 825 3a " 2 2s 3 g| @ This represents the case when a failure-causing Fault lasts for a period more than tALM. A BE H 3 The alarm resets when the input Vin is OFF and the Fault has disappeared. g BE Ee @ This represents the case when the ON condition of the input Vin lasts for a period more £4589 F 8 z 2 than tALM. The alarm resets when the Vin turns OFF under no Fault conditions. BREESE 5 £ 288 This represents the case when the Fault disappears and the Vin turns OFF within tALM. Binz = 2 3 A 3 The alarm resets after lasting for a period of the specified time tALM. Egu2g 2aes3 Fasee off Input signal \\ on f Hl Collector current it ! ' Alarm output ial i ® alarm el he « tdoe a F tdoc Figure3. Over-current Protection Timing Diagram. Period ©: When a collector current over the OC level flows and the OFF command is input within 1 a period less than the trip delay time tdoc, the current is hard-interrupted and no alarm is output. Period @: When a collector current over the OC level flows for a period more than the trip delay time tdoc, the current is soft-interrupted. If this is detected at the lower arm IGBTs, an alarm is output. g 9 Fuji Electric Device Technology Co.,Ltd. g) MS6M 01048 99 IIIT 6 Cr H04-004-03a

Veo[ JPUVWB) Vec| P(U.V.W) IF 20k 20k Ver : al oO) (.) t Veg = @) (.) | SW 4 ‘\\ O) Ic sw? ©) GND 7 GNO cose LUNN) Open LUNE Figure4. Vce(sat) Test Circuit (Terminal) Figures. VF Test Circuit (Terminal) Vee. P ico @ Vee! IPM = IPM Vec || Vin + Veco Vin — © o Wii © P.G cuss HCPL- sav (if) gabe 4504 GND few END Este See ze E 2 Figure6. Switching Characteristics Test Circuit Figure7. Icc Test Circuit | aad geees et Lo wo / |i on i Sug52 arse Tam Tau aun ened E3288 Figure8. Difinition of tsc BEuze aees E832a Vectll dP CT. £a5 58] | 15V | 10u a vin} lu ris = Ww ° 9 4700p Noise d ° @ simulator cs) oO N Earth [Ann Cooling Fin Figure. Noise Test Circuit Fuji Electric Device Technology Co,Ltd. |s) msem 01048 10 59 = = : = H04-004-03a

  1. Truth table .

10.1 IGBT Control

The following table shows the IGBT ON/OFF status with respect to the input signal | The IGBT turn-on when Vin is at “Low’ level under no alarm condition. ; AA BSVinISAF SIGBTOON/ OFFS PRICKLET | FI—LMAEK, Vind "L” LAILT IGBTIKONLET / a es

10.2 Fault Detection

(1) When a fault is detected at the high side, only the detected arm stops its output. 23 2 At that time the IPM dosen't any alarm. ae i L?-ACRHERMLESBS. BHLET-LOAKAEELLET. age COMBE PMA STI-LEMALELA, Has j (2) When a fault is detected at the low side, all the lower arms stop their outputs Hy: H g and the IPM outputs an alarm of the low side. Sty FP-DRE. TUARBH SETAE LIEBE 32826 FI-LE TOM HEBEL, PMAD7I-LEWHLEF. 2 ae a5 Operation of IGBT i a] as U-phase | V-phase | W-phase Feske Uphase | uv | ore | + [| | + | High_| [tion [orr [= | = |= | Hor Veorase | uv | * | ore [os | | High | High side [oc | = | = | corr | + | High _| Pon [= fore [| Hon Poc [os fT tf or | tow | Paon [= ore tow os *:Depend on input logic. | Ss j : H04-004-03a

  1. Cautions for design and application . (1) Trace routing layout should be designed with particular attention to least stray capacity between the primary and secondary sides of optical isolators by minimizing the wiring length between the optical isolators and the IPM input terminals as possible. DrbAFSEIPMOA Aili HO BRISA BCL, DHbDFIO— BME RAO PHA BEVECLENG—VLA POMEL T FEL. (2) Mount a capacitor between Vcc and GND of each high-speed optical isolator as close to as possible. BRIAHATIOVec-GNDAMIC, AY FY PEW RSET EL CUTTS FEL, (3) For the high-speed optical isolator, use high-CMR type one with tpHL, tpLH S 0.8ys. MIRIt HAT IIL, tpHL,tpLHS0.8us, BHCMRIT FEC RACESL. £33 g (4) For the alarm output circuit, use low-speed type optical isolators with CTR 2 100%. eee FS— LM ABBE, TAHT SCTRE100%DS4 FEC BAHL. eoge 38s 232 5 (5) For the control power Vcc, use four power supplies isolated each. And they should be g eee designed to reduce the voltage variations. ei8 HUB Voolk, ARENA BRE BAL TEL. Eie, ERMEMALBHELT PE, #2535 eis 38 (6) Suppress surge voltages as possible by reducing the inductance between the DC bus 228 33 . . , e FE P and N, and connecting some capacitors between the P and N terminals. bgeee PNET TERRIERS ETHEL HO S>-AUEL, 25 rag PNP MICILF YY ERAT SEELTH—S BESIERLT PAL, -gPiga eegee 3 ea cg (7) To prevent noise intrusion from the AC lines, connect a capacitor of some 4700pF geote easse2 between the three-phase lines each and the ground. ACTIUPSD/{ABASMCEOIR, HSH — 7 —AMIL4 7 OOpFHEOIY TY VEL T FAL. (8) At the external circuit, never connect the control terminal GNDU to the main terminal U-phase, GNDV to V-phase, GNDW to W-phase, and GND to N-phase. Otherwise, malfunctions may be caused. ‘Spl GD-F GNDUES San FUE Halting FGNDVES HF VAD, Hila FGNDWE StF WAB ‘fal ita GND ES HF NE APL CHERLELY CFS. REO RAILGVET (9) Take note that an optical isolators response to the primary input signal becomes slow if a capacitor is connected between the input terminal and GND. ADiSeF-GNDMILIY FLY ERT SE, DALAFI—-RMAMESICAG SBSH MA RGVETOCCERCEEL. Fuji Electric Device Technology Co.,Ltd. | MS6M 01048 92 for 5} im H04-004-03a

(10) Taking the used isolator’s CTR into account, design with a sufficient allowance to decide the ‘ primary forward current of the optical isolator. DAbHFFO—RABHIS, SE OPFEAFIOCTREB BLT ICRBELICRAICLT FAL. (41) In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) BPE MMI (ICRU AIT SPIIS, MURRERRI SEO OAL NIUE SEC RACESL, RX, BHR RALLY, BHAA OIT SE, IUNILEMTD ICRF AAI BMT MRE kSMRER RIOR MS RMBVET ANGLER SARIS, MASMICIYANGLEM KRM oT SRERBLTCESLY, eggs (RELEEICBFERYST ST EAL ANGUEO RAV RSERRT SBME. ) = aS Fy (12) Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the 3¥85 Toughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex re 3 of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too ii 3 i large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will 3 i 3 r be worse and over heat destruction may occur. £ 25 3 g PAPULAR BY AT BA CEES 100mm C100umL FW RMOMSIS10umMUL FICLT FAL). 3 2 ig BACURYIMHWI FT SEARAMBRBRERCL, BARMICERT SHSADHVET. Feu 25] Se BAUMIRU OAM BL, ABBOT 1 OMICETAMEC CARO Se ae re a re a z 28 e3 (13) This product is designed on the assumption that it applies to an inverter use. Sufficient examination is required 3 B = when applying to a converter use. Please contact Fuji Electric Co.,Ltd if you would like to applying to converter use. AMals, (Uo /\\—-FRRAOMAEMRICRH SH CHV. ANS AEN SSIS, FORA DET. tL, A N—SAAEN SBS SC ESL, (14) Please see the [IGBT-IPM APPLICATION MANUALJ and [GBT MODULES APPLICATION MANUALJ. TIGBT-IPM FFU7—Yay yaa PF ILIRUGIGBTELa—IL PIU Yay yaar) SMS IRCESL. i i c—J -—| H04-004-03a

  1. Example of applied circuit : | i I ed TT eS i Dew al aa col |e i pee Pig tS} i “De pe tel | Ge | eth : vece | Bag Mamet 9 ote 2538 13. Package and Marking ei22, Please see the packing specification of IPM (Technical Rep. No. : MT6M04140). Saige IPM HELELEMTOMO41 404 (SIR CIAL, 522a 32333) 5o8 | 14. Cautions for storage and transportation = 5 oe - Store the modules at the normal temperature and humidity (5 to 35°C, 45 to 75%). £6525 eeraé WiRBRG~35°C, 45~75%) THRELT RAL. So285 5 a3 ig + Avoid a sudden change in ambient temperature to prevent condensation euase on the module surfaces. £8582] EVA NORBMBBLEVAI, BMWTRERILERt TFS. + Avoid places where corrosive gas generates or much dust exists. RRHAAORESM. WHO SUBLET TC PSLY, + Store the module terminals under unprocessed conditions | EVA— MO tH FlSRMLOKECRET SL. . + Avoid physical shock or falls during the transportation. MIGRESALUBPSEEUC ALS 15. Scope of application This specification is applied to the IGBT-IPM (type: GMBP50RU2A120). ARB IS IGBT-IPM (213¢ : (MBP5ORU2A 120/13 SS. 16. Based safety standards UL1557 . . . 2 7 Fuji Electric Device Technology Co.,Ltd. 2 MS6M 01048 22 H04-004-03a
  1. Characteristics .

17.1 Control Circuit Characteristics (Representative)

Power supply current vs. Switching frequency Input signal threshold voltage © — Tj=25c 15=25°C (typ. ) vs, Power supply voltage(typ.) —--.- tja1256 50 ee a ———eside i H H i H Poside UO Weost¥ i i i i i Neat i i H i i z AZ 2 i i i i i 2 30 : igen 3 Provese prc sec deeeecedecesccey ¢ ne 3 i i i i EE Vinthioft) a MO i ES p : i i 1 Vinten)

2 Noost7V - i H i { i

= 10 semen i eeerg 3st la Woes 15, = i i i i i o 5 10 a 20 a W Ww 4 Ss 1 7 18 Switching frequency :fsw [kHz] Power supply voltage : Veo (V) £233 ga28 é bes Under voltage vs. Junction temperature (typ. ) Under voltage hysterisis vs. Junction temperature (typ. ) og 4 afl as = j H H i i ieee ees ees ees es ee ae S3558 i ee ee ne ee ee 3 i : i : : peEaS 2 eae ane a eee a i i : i j a22g6 pee ee ee Bo Bags 2 0 ° i i gegeg 20 40 60 80 oo vo M40 20 40 60 80 100 120 140 £3820 unetion tenperature + 140°C) vunction temperatura : Tj (°C) S32 T SI €a5se2 Alarm hold time vs. Power supply voltage (typ.) Over heating characteristics 3 ToOH, TjOH, Toll, TjH vs. Veo (typ. ) T T H Hi i 200 T t T T ca i : i i i en | nn cn eee a! PN se cc ee a ee a 2 | i i i i ee i i H H H 2 i i iron | i m8 4 6B 6 ow » MS i Power supply voltage ° Yoo (¥) Power supply voltage : Yoo (¥) | = 1B | Fuji Electric Device Technology Co,Ltd. |3) sem 01048 5 22 | H04-004-03a

17.2 Main Circuit Characteristics (Representative)

Collector current vs. Collector-Emitter voltage (typ. ) Collector current vs. Collector-Emitter voltage (typ.) H Tj=25°C (Chip) Tj=25°C (Terminal) | i i H H Mi H . Hi H iH WA H = i i ia i i 5 i H uf H i 0 08 1 18 2 25 3 o 08 1 15 2 2 a Collector-Emitter voltage :¥co [¥] Collector-fnitter voltage :Vce [V] 243R5 BSS Sees =e 53 Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Col lector-Emitter voltage (typ.) Bote Tj=125°C (Chip) Tj=125°C Terminal) Seis 100 T T T T 100 T T Size i H i : i H ! i i | PS Hl i i booby i f i i bey B25 = i i H a Lie = i i Hl y a g2a3 z Pb tay § OO ect eet. Sa ee eee ee a 77a ee oa Sn SE Dine ie? 74 aa g25 23 ¢ | D4 Wi | z : pod Via geese] é ed eee ee a a BES3 3 3 i Hi BO i 3 i Hi al i | aige Q = ° | BRS aE ° 05 1 15 2 25 3 0 05 i 15 2 25 3 | : aa eg Cotlector-tnitter voltage :Vco IV] Collector-faitter voltage :Veo (V) ' 2esee| Fosse i Forward current vs. Forward voltage (typ. ) Forward current vs. Forward vol tage(typ. ) Chip) (Terminal) 10 : woo ry a a ee od Tjs25%| ec _ swe fs / atyeasre fi / = y & / / = 60 ce oe i. : 3 - = 6p bo Sa Sena Gann Gaara & fi & : Jf “A 4 en : ZO 0 ; o H aan

0 Os 1 5 2 25 3 o O85 1 16 2 25 3

Forward voltage <Vf [¥] Forward voltage ‘Vf [¥] Ss [ Fuji Electric Device Technology Co,Ltd. |3| msemo1048 6 a H04-004-03a

itehi . . Switching Loss vs. Collector Current (typ. ) Saitoh een: Vooniev Ties ' Edo=600V, Voo=15V, Tj=125C i 1s T 7 Tq i T 7 i 3 i : g i fon | 5 i fon a yy | € : ¢ a, fff | a a uv & H i foft 4 i g Bi o : 2 3 ic Es i i 2 Z fer a ue Fo anne o i i 0% i . o ao 4 a 80 100 o 2 40 oO eo Too tollector current “te (A) Goltector current <tc [Al 2e3s £28 e353 ; ; wege Reversed biased safe operating area 38 i mo Voo=15V, 1/125 (nin.) Transient thermal resistance (max. ) Size i : ; COREE DOE eee S323 : Pee eee ee ete eee E28 i 8 COON SSE DATE —— aesé 160 : nena wd J Ea iL Sy = 25°08 _ F Hi 3 pda AL ME veka oe ed fet, NBT 22te6 5 FBSA : B01 bodind gd Steichen chitin §e85° = Giepotitive pulse) | & Yate See RET RO OR REAR SA ee ROCESS 32832] 2 : 1 ¢ Cee ergge 2 : ; Fo pfhrb biiibenpebbpiitbcebetebi ioe

23328 Ss a : t f E dodighh i becnededi db Easbenefuedebdate

EeEa2 : feet Met Ee ogee Fi aon i ATE Heat} 233 ee ° 00 600 soo 120 1500 0.001 0.01 01 1 ge8eg Collector-Enitter voltage :Vee [¥] Pulso width :Pw [soc] e3a2a 2 3 Dts Fasse Power derating for 1GBT (wax. ) Power derating for FD (max. ) | oo (per device) (ber device) | 300 | § NS = 200 : oe 2 ‘ 2 i i : a © gg bonne fone evnned . i Bw b. Saget § : 0 0 a 50 300 150 0 50 10 150 Care Tenporature :To ['c} ase Teaperature :To [o} g 7 Fuji Electric Device Technology Co.,Ltd. {3} msem 01048 2 ol “ —_ H04-004-03a

Switching time vs. Collector current (typ. ) Switching time vs. Collector current (typ.)

5 Edo=600V, Voo=15V, Tj=25°C 5 Edo=600V, Voo=15V, Tj=125°C

g 5 ttt ; i, : 2, a a 0 i 0 20 40 60 80 100 oO 20 40 0 80 100 Collector current :lc [A] Collector current :Ic [A] 22R8 Z Base Reverse recovery characteristics typ. ) wee trrirr vs. If =eSo T T Seee rte cersecetheaesceneedicoepennet den coe ra preteens 7 a soe 2 i i i £33 ° Be 100 bo rohiudiumise ig e $8239 Be LOUIS, ae eased 3 sevenbantinfpee ee feetahat : 3 ag ge 7 Ine Tj=250 32333] BE pvt a es cae Era 29 He er} : £4325 oes ma 2885 | BRESS 10 L Eg283 . 0 0 0 0 © © 1 @ Bez2e Forward current :1f (A) gegeg 22323 Ega2a 2s0te easSe2 s | Fuji Electric Device Technology Co,Ltd. |s| msem 01048 18 im a 22 H04-004-03a

  1. Reliability Test : | Test condions and results Test Reference norms|Number|Accept-| Number| cate- Test Items Test methods and conditions EIAS of ance of gories ED-4701 | sample |number| failure Terminal strength [Pull force + 40 N (main terminal) Test Method 401 (1:0)

10 N (control terminal) Method I

Pull test) Test time 11031 seo. cee ae eee = Test time 11021 sec. method I Vibration Range of frequency : 10~500 Hz Test Method 403 (1:0) Sweeping time 215 min. Condition code B Acceleration 2100 mis* Sweeping direction: Each X,Y,Z axis 2 Test time : 6 hr. (2hr./direction’ rad Shock Maximum acceleratic : 5000 m/s* Test Method 404 (1:0) B Pulse width 1.0 ms Condition code 8

5 Direction : Bach X,Y,Z axis

5 Test time : 3 times/direction

3 Solderabitity Solder temp. 7 235 25°C Test Method 303 (1:0) Immersion duration : 5.0 £0.5 sec. Condition code A [Test time 1 1 time Buys Each terminal should be Immersed in solder gage within 1~1.5mm from the body. mess Resistance to [Solder temp. : 26045 °C Test Method 302 (1:0) = a2 8 soldering heat __|immersion time : 10 41sec. Condition code A sag Test time 21 time Bey Each terminal should be Immersed in solder SBS e |within 1~1.5mm from the body. 2538 storage Test duration 21000 hr. Saou |? storage Test duration 21000 hr. 33225 3 |Temperature [Storage temp. 1 8522°C Test Method 103 (1:0) gases humidity storage |Relative humidity : 85 5% Test code C abese Test duration :1000hr. Eras Unsaturated | Test temp. : 120 £2°C Test Method 103 (1:0) 2 Bed 24 pressure cooker Atmospheric pressur : 1.7x10°Pa Test code E 2gf2e) | 2 Test humidity 2 B5 5% EB z5 g 2 Test duration : 96 hr. Bossa = Temperature Test temp. : Minimum storage temp. -40 £5°C | Test Method 105 faze Fi 8 cycle Maximum storage temp. 125 +5°C gegeg! | § Normal temp. 5~ 35°C Ess2a| | s Dwell time : Tmin ~ Tw ~ Tmax ~ TN Number ofcycles _: 100 cycles Thermal shock +0 Test Method 307 (1:0) ‘Test temp. : High temp. side 100° °C method I cy Condition code A Low temp. side 0” °C Fluid used : Pure water (running water) Dipping time : S min. par each temp. Transfer time : 10sec. Number of cycles _: 10 cycles fT i i 2 9° Fuji Electric Device Technology Co.,Ltd. |g) MseM 01048 2 H04-004-03a

Test Reference norms|Number| Accept-|Number icate- Test items Test methods and conditions EIAJ of jance of gories| D-4701 | sample |number| failure ~ 1 High temperature [Test temp. =125t5C Test Method 107] 5 |(1:0) | reverse bias (i S 150 °c) | o Bias Voltage : VC = 0.8*VCES /

3 Bias Method : Applied DC voltage to C-E |

r Vee = 15V |

2 Test duration 21000 hr, |

§ 2 |Intermitted ‘ON time : 2sec. Test Method 106 (1:0) i 2 operating life |OFF time : 18sec. | a (Power cycle) | Test temp. : ATj=100 +5deg | Tj S 150 °C, Ta=25 45°C | Number of cycles _: 15000 cycles 2235 gaz | any Failure Criteria | Se28 e5Es | z aE 5 Item Characteristic Symbol Unit | efsg fe, a i E3¢ 2232 | — [Electrical ices [| - | usix2.0 $3234 characteristic [Saturation voltage vcg(sat)| - _| USLx1.2 e252 23teal Forward voltage VF USL*1.2 V gee58 32838 Thermal |IGBT Rthgoal - ‘| UsLx1.2 23528 resistance _|FWD Rth§j-c)D USL«1.2 C/W. 26 See LSLx0.8 | USLx1.2 Bess ERES3 [Alarm signal hold time LSLx0.8 | USL*1.2 agnee LsLx0.6 | USL*1.2 BeSes . " - a E8 3 2a Isolation voltage Broken insulation [ - | £8582) Visual Visual inspection inspection Peeling The visual sample Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. Fuji Electric Device Technology Co.,Ltd. 2 MS6M 01048 20 22 : ; H04-004-03a |

  1. This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. RROBWARALE (EE, Ci. RES) OMAHA THRATAL. BHARAR BCMA CREAT SL, RFAMRT SHEMHVET, 2. Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. B-OQREOBRCREMBRLIEG SEA BL, GHERLAM AO MINER OCI—A RiEDL—A—-EMDF Ht CARRE CHEE, 3. When studying the device at a normal turn-off action, make sure that working paths of the turn-off voltage and current are within the RBSOA specification. WEOS-LATHMFIEU ORF RBORBHOMICIL, S—-VA FEE: BRO MAMA RBSOAL RAIL SOLA HLT FAY, Fs 23 g 4, Use this product after realizing enough working on environment and considering of product's reliability a Ee 2 life. This product may be broken before target life of the system in case of using beyond the product's Peete reliability life. 3: ze NRORMRAET HEEL, MR ORRMESHMBE CESDRHOL, AWREBALTFAL. ae 3 RAO Hear RALLIES, RHO ARH HLYMICRT ART SBEMHVET. gees 3 H 3 5. If the product had been used in the environment with acid, organic matter, and corrosive gas

3 HS zy (For example : hydrogen sulfide, sulfurous acid gas), the product's performance and appearance

2 32 z F can not be ensured easily. Fs A a8 a e- A- BRIEA A HLA, BRAS) ESCM CRMENEBA, buf 23] MRM REL ORIERLOET. 3229 2 gree 6. Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). z ? 23 $ Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. a a3 ze Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of aa 22 equipment which use this product. In application which has such frequent rise and down of Tc, Fe 2: Fi 2 well consideration of product life time is necessary. BGLBIE. NI—1-4 OLB MHA—F YE CE FEU RATE AINo.: MTSF12959), AND—VADNWAMBIECO A TILESBAOMIK, ATALLSRBSMHVET. CHld7—ARETIO EF PIRICESMALLA THY, ALBEE SEO MAE RLET 7-AREOLS FARIS CSB Sls, MAHI DESL PAL. 7. Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. EMF RUG EMF AESATHBEEGL TFA. WF ORIRLY HART RESIST BA MHVET, Fuji Electric Device Technology Co.,Ltd. z= : H04-004-03a

  1. According to the outline drawing, select proper length of screw for main terminal. : Longer screws may break the case. ARR UBI SEF ORV ORSIS, HERI ELBE PSL. RIBRVET—AMBIAT SH ARBIET « 9. If excessive static electricity is applied to the control terminals, the devices can be broken. Implement some countermeasures against static electricity. MFA E AMM MSHS, BFMBRT SRAMHVET, AYR BSH EAH RERILT PSL. Caution 1. Fuji Electric Deveice Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted £23 = from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep é z i A safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. = 82 8 BLBRT 1279/07 SHAT RAO BA CEMIEO RR LICBH TORT. LOL, FRAN AISA ARELEY, 3gse RT SRSMHVET. SLERMER AD ROMMELISRM EA, BRCLTAR BM KSI LSM BIC Eee 3 WT SRE PHSB SRST ATCT RH - MEEHAN ELEM CERLEROLOOFRE a MCTFAL. : ae 3g 2. The application examples described in this specification only explain typical ones that used the Fuji 2 i] 5 34 Electric Deveice Technology products. This specification never ensure to enforce the industrial property ¢ 24 33 and other rights, nor license the enforcement rights. é ERd 52 ALAR CH SIGS. BEET V4 AFI /0Y BSE RLERRME ERAT SEO CY, 28¢ Be AMAL CLM ALE, EOE ORBIT SRM Te LAME O HBE TIED CABVETA, EBEas 253 ee 3. The product described in this specification is not designed nor made for being applied to the equipment ase 22 or systems used under life-threatening situations. When you consider applying the product of this 223 33 specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required i teliability. ARB ICIM SN MBIS, ARICA DDSLIGUR F CRASH SBBH OMSL AFAICAUSHZCES BMEL THE MBSHELO TLHVECA, SHHFOM REHM, MAA MESH. RRS. REA i ‘ofS, AE PRD OUST AT AGE, RAR AOCA ECR OMS, VAT LER RUEBR AAS | BEI SCLECHROL, CHAPEL, If there is any unclear matter in this specification, please contact Fuji Electric Deveice Technology Co., Ltd. Ss i] Fuji Electric Device Technology Co.,Ltd. = é H04-004-03a