6MBP50NA060-01 FUJI
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Technical content
_Device Name: IGBT-IPM Type Name : 6MBP50NA060-01 ‘ Fuji Electric Co.,Ltd. Matsumoto Factory | | _pate NAME | APPROVED o ‘ DRAWN iy 27° “74 lil:Kawavant Fuji Electric Co.,Ltd. [| | Toesed §MS6MO275° ins 7 +
Date | heaton re. | Content | Applic | Drawn rece herve Mak -27- i foseren _ | —— | ie | — ese re |g [1 Fuji Electric Co.,Ltd. sMS6M0275 ansER H04-004-06
uO | a 1. Outline Orwing Unit: mm Sti :mm 1o92i , : 95203 13.8203 674 A 22:5 , 322203 | 52a 0% 508 Ds 509 DS, 52 5 [25 Re “ee | a i TA PIL | | (61 Th | deere | GD — — 3 a Pr) _ | 2 | el =| rt Ww ly U | te | Pj lie Qi [© i 52352 6-M5 D0g4 —2p25 3558s Wb | =| 2 2683: ] ell (il tte age! 4, | Fie svsrfoHA06O-01 | 3| ” BgSSe SQ} 4 7 sca} sory ema 0 7 = 22322 : ! Fuji Electric Co.,Ltd. mse M0275. 3st HO4-004-03
2 Block Diagram
VinU @ t Pre-Driver VB GNDU U VecV @ 1 A Vinv & Pre-Driver IN | cnove 3 y VecW © vu GNDW @ ‘ Ow Veco @ | ~comat—IK 4 Ls wwe PEE
23332 VinY @——+— Pre-Driver N
aoe? VinZ & , Pre-Driver iS fesse OB Nc @ EE Temperature sensor Raw Over heating protec- “My ALM @—W- _ circuit [oo] Pre-Drivers include following functions @ Short Circuit Protection Circuit @ Amplifier for Driver @ Under Voltage Lockout Circuit / @ Over current Protection Circuit | g -}— Fuji Electric Co.,Ltd. §MS6EMO0275 4ansom H04-004-03
a 3. Absolute Maximum Ratings (at Tc=25% unless otherwise specified) tems Symbols Ratings Units OC Bus Voltage OC Bus Voltage (surge) Voc(surcé) 0 500 Vv poe | te TT oT a N seewonee Current v Duty=62.6% ac | — [Gunction Temperature TS ST — | ts] Storage Temperature | Tstg | -40 Bas: Isolation Voltage (Case-Terminal) [ Viso #5 | — |acz.s|_ kv 22258 Note 3% 1 Vee shall be applied to the input Voltage between terminal No. 3 and1, 32222 6 and 4, 9 and 7, 11 and 10. ae 3% 2. Vin shall be applied to the input Voltage between terminal No. 2 and 1, egies 5 and 4, 8 and 7, 12 13 1415 and 10. 23323 33 Vata shall be applied to the Voltage between terminal No. 16 and 10. 22528 34 lau shall be applied to the input current to terminal No. 16. si2s 3&5 50Hz/60Hz sine wave 1 minute. ——e (0) [ek fai fal (Oo Fig.1 Measurement of case temperature - fs TT Fuji Electric Co.,Ltd. Msemo27 5 osns = H04-004-03
‘ ; | 4. Electrical Characteristics
4.1 Electrical Characteristics of Power Circuit (at Tc=Tj=25,Vec=15V)
Collector Current | lees [“<er600v |— —| 1.0 | mA 1 | at off Signal Input N |Collector-Emitter | Ic=S0A | | —| 29| Vv V| Saturation Voltage Forward Voltage of FWD Ve [-He=50A — | —] 30
4.2 Electrical Characteristics of Control Circuit (at Tc=Tj=25T,Vec=15V)
Items Symbols Conditions | Min. | Typ. Side Pre-Driver (One Unit) Duty=50% — 6 16 mA Power Supply Current of N-Line fsw=15kHz Side Three Pre-Drivers and Iccn |Duty=50% | —| 18 48 mA Protection Circuits 3325 Input signal Threshold Voltage Vin( on) JON | 1.00 | 1.35 | 1.70 Vv e233 Vin( or) |OFF [1.25 | 1.60] 1.95 24225 |[Zener Voltage | vz | | 69 |—I[77] Vv 2&5 2g ||Over Heating Protection(OH) Tox [eoccoero® | 100 | — 125] 2 5 3 Level Case Temperature ea22e OH Hysterisis TH | | — | 20 |— EES 3 Protection(OC) Level INV Collector Current 25232 |[OC Delay Time (Fig.2) | woe [Tj=25' [les [— 35323 Under Voltage Protection(UV) Vt | | 11.0 | "29 12.5 | v eget Level | 2522: | [UV Hysterisis va | Loz |—|—]|v | Alarm Signal Hold Time | tam | |o8 | 2 | —_ Protection (Fig.3) [Limiting Resistor for Alem | Raw | v2 fasoofis7s[ a | %K6 Switching frequency of IPM
4.3 Dynamic Characteristics (at Te=Tj=125°C,Vec=15V)
Switching Time (FWD) er [F=50AVoce300v | — | —] 400 | ns | Fuji Electric Co.,Ltd. g MS6MO0275° 6xns5 = H04-004-03
ALM : teoc ! Fig.2 : Definition of OC Delay Time : tse : gees : — 23233| Alarmaisable alarm disable : Alarm enable age Fig.3 : Definition of tsc : tf t ‘ one Collector Current (Ic) : : : x 8 ; H \\_toff_} tt ee Fig.4 : Definition of switching time ~]g = Fuji Electric Co.,Ltd. sMS6MO275— 7sEe HO4-004-03
| 5. Thermal Characteristics (Tc=25T) Items [ Symbols | Min. | Typ. | Max. | Units Junction to Case |" IGBT |Rth(j-c) | — | — | 0.63 | cw | | Thermal Resistance ew [RthG-<) | — | — 11.33 | caw 6.Mechanical Characteristics Items | Min. Typ. Max. erento Terminal (MS) | —_ | —_ 3.5 Nem 7.Recommendable Value DC Bus Voltage | ve | 200 |— | 400] v sere Operating Power Supoly Votege | Vec | "35 15 |16.5 Vv 2ili Range of Pre-Driver
23223 Screw Torque | Mounting (M5) — | 25 |—]| 35 | Nm
eieis : Terminal (M5) — | 25 |—]| 3.5 [Nem . Ti Fuji Electric Co.,Ltd. Msemo27 5 ans =
7 HO4004-03
- Packing and labeling Lacel x material card board weight 5.5 kz (Max.) T — prouc:s 1Opes (Max.) ra) a & 260 | typename LotNo. rpaiPeo?) ‘ ee sf SS” —_ VE + Bene ee the number | | ~ oO Ro) a 247 3g2 r 28 33 | 9. Storage and transportation notes (RB, ZRLOSSHA) 285 is : The IGBT-IPM should be stored at a standard temperature of 5 to 35 °C and humidity of g3328 45 to 75%. 22252) MIRREMBELU, (5~35C, 45~75%) 325 3c : Store modules in a place with few temperature changes in order to avoid condensation aee2: on the module surface. geese SUT BERLORE CL, (EYa-WREMSRLGNCL) 223 23 - Avoid exposure to corrosive gases and dust. Bubse BRUAAORABM, BROSVBMZETSCE. ies B: - Avoid excessive extermal force on the module.
23322 BRCBEMOPD SRUADICTHICEBT SCE,
- Store modules with unprocessed terminals. ELYa-NOBFAAMLORECREFSCE. - Do not drop or otherwise shock the modules when transporting. BAOESSICHBESAKY, BRECKYLENCE. 10. Applicable category (MAE) This specification is applied to IGBT-IPM named 6MBPSONAO60-01. AMAA lt. IGBT-IPM 6MBPSONAO6O-O1 (CATS. g To Fuji Electric Co.,Ltd. sMSE6MO275~ sms HO4-004-03
. | 11. Characteristic (Representative) SEA-TF (RBA) 11-1.Control Circuit Power supsly current vs. Switching frequency trout signal threshold voltage sage Tex100C as vs. Power supply voltage me tense 3 7 s ] zi j ery Neiv | 82 a| | i { | £20 F T 7 Veet £5 Tce bees ese 5 s | i | L C 1 i | i 3 2 we i a a Vie(ON) Dyfi ! z21 ; Po i a 0 | i | i } | oT 10 15 20 35 12 13 14 15 16 17 13 Switching frequency : fsw(kiz) power supply voltage : Ver (V) S25 Under voltage vs. Junetion temperature Under voltage hysterisis vs. Junction temperature Base it er neem > 1 | £222, ya = oneks sit i Lone { 2 oa! e2isg/ 2,000 ! $08 1 3232¢ 38 en =2252| 2 | : Ta bsaas oh j 5 26238) 7b 2 3° ; | 243 3s . [ ] 3 “ - 4 Soc seniee ee | #323; rr eT a” aT PT? Zeks 2. 40 so. 80. 100 120° 140 20 40 30 20. +100 +120 ~«&+¢ gE2ee Junction temperature : Tj (©) denction temperature : Tj (C) Over heating characteristics Alarm hold time vs. Power supply voltage TOH,TH vs. Vee aa | i | Poi | ~ 120 row Bes fen a etooe | & bd srfecnedan + vo | ions a i “i . | Zoos = = + + . H H i i H H * f L fete ee ee | ba a a a 12 13 14 15 16 7 18 0 Power supply voltage : Vec(V) 12 13 14 1S 16 7 18 Power supply voltage : Vec (V) Ts T Fuji Electric Co.,Ltd. sMS6MO0275_ wns | H04-004-03
a 11-2.Inverter AYR-FB Collectar currant vs. Callecter-Enitter voltage Collector current vs. Collector-Emitter valtage 7x25 99 ie poo] oo yan v sv ay eT] vcol : : Vecel7V 18 134 j
2 AI i i | | 2 30 7 -
8 i i | S| 2) + oF WA i j ° ar carat °5 1 2 3 + 5 ° ‘cotectent tee vetase vet w) ° Collectar-Emitter voltage : Vee (V) sess Switching tme vs. Collector current Switching time vs. Collector current 33is Ede=300V Vere 15V.T223S Eden 3OOV,Veo=1 5V, Tint 25% 5355 f i t f j i 28255| 2 i , a | i _tteff; | 3 | a Besis 0 10 20 30 40 30 £9 70 50 $0 0 10 20 20 40 50 60 70 80 $9 ones Collector current : I (A) Collesior current : Ie (A) Reverse recovery characteristics , Forward current vs. Forward voltage a ini vs. IF yoo | 2c _l <3 ; i \\ wr tase = 80 ~“ | | 4 2200 ESSE mpomob eS ast 20 — § § 10 preeatsec peers pec feen %o 0s 10 15 20 25 30 35 40 oo 0 20 30 4030 *GOO~~BO. «BO Forward voltage : VF (V) Forward current : IF (A) ; IH Fuji Electric Co.,Ltd. MS6M0275_ uns H04-004-03
: | Reversed tissed safe cceratng area Vere S¥,T}S 1255 Transient thermal resistance ST a | = j 7 FAO asol ! i | | i i i r , 3 7 1 7 Td z i i § 109; 7 7 | i * oot L t i | I | | 0.001 0.01 01 1 a Pulse wictn Pw (sec) Collector-Emitier voltage : Vee (V) Power cerating for IG3T Power derating for FWD | (per device) (per device) zse2| 3 ; — 3 foo] i 35338) 610° fmf Tew l TS fosenennsotenn arene 4 CIID sof 4 22322 9 ae o: i H 0 a es | 2ogee 0 20 40 80 80 100 120 140 180 o 20 40 8 @0 100 120 140 180 EeS23 Case Temperature : Te (T) Case Temperacure : Te (S) Switching Less vs. Collector Current Switching Loss vs. Collector Current _ Ede=300V,Vec=15V, Tja25T . Ede=300V,Veo=15V,Tj=1 25°C 3, core co i B poe pooner eee Loree fof] <, ee ee o f] i o tt 34 | ot | =, (a i &, ia i &, I Se i J ge ed 2 bebe Beyer 3 baz EEE By t 7 tt 1 1 oO 10 20 30 40 50 60 70 80 oO 10 20 30 40 50 60 70 30 Colleetsr Current : Ie (A) Collector Current : te (A) se . i] Fuji Electric Co.,Ltd. AN S6MO0275 iis H04-004-03
Over Current Provecuca vs. dunctisn temperature z 20 : : : vents : Sigg} 3, 1 | a ee a ed ee 4 a a ged oO 20 40 60 80 100 120 140 dJunetion temperature : Tj (<) Fuji Electric Co.,Ltd. : E|Ms6moz27 313/754 HO4-004-03
12.Example of applied circuit (SRHRA) 2eea ———-+? AC200V | veoh ea = Zzz71 08k 3 IPM a) vex |¥ LK ore | a u 20K a ’ 8) we By x hour 4) \\ of KI on | | . —Zaln 20«9 sl lw l cr = our i eo 7 LF ED Vo IN | 20Ka nol 1S = Zour _.| seas = l a id £2588 le n = ZF 5 - g2eEe 20k 2heee h = zz" our eeese sve_itk | z| A RESEE a + The wiring between opto-coupler and input terminal of IPM should be shorter as much as possible. The stray-capacitance between primary and secondary side of opto-coupler should not be increased by pattern lay-out. HREDISEPMOAHBFEMMBIS, TASES LAFATIOI RK: 2RMOPESRE BME tEUNI-YUIFTORELTFEM. : + Capacitor should be installed to VCC-GND terminal of high-speed opto- coupler closely as much as possible. eek KA TSO Vec-GND MICS, AVF VPS TE SLIFHBLTRYMITTHEL + Use high-speed opto-coupler : tPLH,tPHL 3 0.8us, high CMR type. (Example : HCPL-4504) Bik hATS :tPLHtPHL S 0.8 us, MCMRI4 FECHA SU. (IHPCL-4504) - Low-speed opto-coupler : CTR 2 100% ERA hATS :CTRZ 100% Fuji Electric Co.,Ltd. MS6MO0275_ wns H04-004-03
oo | - Each power supply for drive circuit should not have transient voltage fluctuation. Four power supplies which are isolated should be supplied individually. SHSARRLBARERDOV EN, BRLALOS 4 SSTICLTRELTTEN. + The DC bus line to the P-N terminal should have lower inductance as much as possible, such as connecting capacitor to P-N terminal, in order to reduce surge voltage. PNMOBRSRIS CE SEIET VIDS VAICL, PNBFMIC AY TYP ERBRTSRELTI— YREZERLTFEN, «In order to avoid noise from AC line, connect capacitor (about 4.7uF) between three-phase line ) and earth. ) ACS4 YPSD/ A ABASHC KD, HBER-ARMIC4MFBROIYT YS EBRLTREM. + Do not connect N-terminal of main circuit to ground (GND) of input circuit. AABBOYSY EK (GND) CZMBNAFE IPMORSMCERLANTHEN. + In case of using connector for connection to control terminal, it must be Au-plated electrode and 2.54mm of pitch. HBRECOBRICIZAIVERVSSS, Sky+ BS: 254mm CyFOSNECRATEW, - When capacitor is connected between input and GND terminal, pay attention to longer delay time after signal inputted to primary side of opto-coupler.
3323 ADSF-GNOMIC IY FL PEBRTSLARANATS UROANESICHT SHERMMRS VET
233 DCSE,
22555 . se28s SStse : I | H04-004-03