6MBP300RA060 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 7

Technical content

Features

  • Temperature protection provided by directly detecting the junction temperature of the IGBTs
  • Low power loss and soft switching
  • High performance and high reliability IGBT with overheating protection
  • Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Symbol Rating Unit Min. Max. DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current DC 1ms Duty=55.5% Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) V DC VDC(surge) VSC VCES IC ICP -IC PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5 Item 200 -40 -20 450 500 400 600 300 600 300 1040 150 Vz Vcc 125 100 AC2.5 3.5 * 3.5 *6 V V V V A A A W V V mA V mA kV N·m N·m *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N·m Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V) Item Symbol Condition Min. Typ. Max. Unit INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD ICES V CE(sat) VF V CE =600V input terminal open Ic=300A -Ic=300A – – 1.0 mA – – 2.8 V – – 3.0 V Fig.1 Measurement of case temperature

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V) Item Symbol Condition Min. Typ. Max. Unit Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm fsw=0 to 15kHz Tc=-20 to 100°C *7 fsw=0 to 15kHz Tc=-20 to 100°C *7 ON OFF Rin=20k ohm VDC=0V, Ic=0A, Case temperature, Fig.1 surface of IGBT chips Tj=125°C Tj=25°C Fig.2 Tj=25°C Fig.3 I ccp ICCN Vin(th) VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC R ALM 1.00 1.70 110 150 450 11.0 0.2 1.5 1425 1.35 2.05 8.0 1500 1.70 2.40 125 12.5 1575 mA mA V V V A µs V V ms µs ohm Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V) Item Symbol Condition Min. Typ. Max. Unit Switching time (IGBT) Switching time (FWD) ton IC=300A, VDC=300V toff trr IF=300A, VDC=300V 0.3 - - - - 3.6 - - 0.4 µs µs µs Thermal characteristics( Tc=25°C) Item Symbol Typ. Max. Unit Junction to Case thermal resistance Case to fin thermal resistance with compound Rth(j-c) Rth(j-c) Rth(c-f) - 0.12 - 0.25 0.05 - °C/W °C/W °C/W INV IGBT FWD Item Symbol Min. Typ. Max. Unit DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) V DC 200 - 400 V VCC 13.5 15 16.5 V fSW 1 - 20 kHz - 2.5 - 3.0 N·m - 2.5 - 3.0 N·m Recommendable value *7 Switching frequency of IPM

Outline drawings, mm Mass : 920g Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection

Characteristics (Representative) Control circuit 100 0 5 10 15 20 25 Power supply current vs. Switching frequency Tj=100°C N-side P-side Vcc=13V Vcc=13V Vcc=15V Vcc=15V Vcc=17V Vcc=17V Power supply current : Icc (mA) Switching frequency : fsw (kHz) 0.5 1.5 2.5 12 13 14 15 16 17 18 Input signal threshold voltage vs. Power supply voltage Input signal threshold voltage : Vin(on),Vin(off) (V) Power supply voltage : Vcc (V) Tj=25°C Tj=125°C } Vin(on) } Vin(off) 20 40 60 80 100 120 140 Under voltage vs. Junction temperature Under voltage : VUVT (V) Junction temperature : Tj (°C) 0.2 0.4 0.6 0.8 20 40 60 80 100 120 140 Under voltage hysterisis vs. Jnction temperature Under voltage hysterisis : VH (V) Junction temperature : Tj (°C) 0.5 1.5 2.5 12 13 14 15 16 17 18 Alarm hold time vs. Power supply voltage Alarm hold time : tALM (mSec) Power supply voltage : Vcc (V) Tj=125°C Tj=25°C 100 150 200 12 13 14 15 16 17 18 Over heating characteristics TcOH,TjOH,TcH,TjH vs. Vcc Over heating protection : TcOH,TjOH (°C) OH hysterisis : TcH,TjH (°C) Power supply voltage : Vcc (V) TjOH TcOH TcH,TjH

0 0.5 1 1.5 2 2.5 3 3.5 Collector current vs. Collector-Emitter voltage Tj=25°C Vcc=13V Vcc=15V Vcc=17V Collector Current : Ic (A) Collector-Emitter voltage : Vce (V) 100 1000 10000 0 100 200 300 400 500 Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=25°C Switching time : ton,toff,tf (nSec) Collector current : Ic (A) toff ton tf 100 200 300 400 500 0 0.5 1 1.5 2 2.5 3 Forward current vs. Forward voltage Forward Current : If (A) Forward voltage : Vf (V) 125°C 25°C 100 200 300 400 500 0 0.5 1 1.5 2 2.5 3 3.5 Collector current vs. Collector-Em itter voltage Tj=125°C Vcc=13V Vcc=15V Vcc=17V Collector Current : Ic (A) Collector-Em itter voltage : Vce (V) 100 1000 10000 0 100 200 300 400 500 Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=125°C Switching time : ton,toff,tf (nSec) Collector current : Ic (A) toff ton tf 100 1000 0 100 200 300 400 500 Reverse recovery characteristics trr,Irr vs. IF Reverse recovery current : Irr(A) Reverse recovery time : trr(nSec) Forward current : IF(A) trr125°C trr25°C Irr125°C Irr25°C

0.001 0.01 0.1 0.001 0.01 0.1 1 Transient thermal resistance IGBT FWD Thermal resistance : Rth(j-c) (°C/W) Pulse width :Pw (sec) 300 600 900 1200 1500 1800 2100 2400 2700 3000 0 100 200 300 400 500 600 700 Reversed biased safe operating area Vcc=15V,Tj 125°C Collector current : Ic (A) Collector-Emitter voltage : Vce (V) SCSOA (non-repetitive pulse) RBSOA (Repetitive pulse) 200 400 600 800 1000 1200 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 Power derating for IGBT (per device) Collecter Power Dissipation : Pc (W) Case Temperature : Tc (°C) 100 200 300 400 500 600 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 Power derating for FWD (per device) Collecter Power Dissipation : Pc (W) Case Temperature : Tc (°C) 0 50 100 150 200 250 300 Switching Loss vs. Collector Current Edc=300V,Vcc=15V,Tj=25°C Eon Eoff Err Switching loss : Eon,Eoff,Err (mJ/cycle) Collector current : Ic (A) 0 50 100 150 200 250 300 Switching Loss vs. Col lector Current Edc=300V,Vcc=15V,Tj=125°C Eon Eoff Err Switching loss : Eon,Eoff,Err (mJ/cycle) Collector current : Ic (A)

0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 Over current protection vs. Junction temperature Vcc=15V Over current protection level : Ioc(A) Junction temperature : Tj(°C)