6MBP25RU2A120 Datasheet PDF & Specifications

Manufacturer Specifications

Compare 6MBP25RU2A120 variants.

Select a manufacturer to view its specifications, local PDF, and searchable HTML text.

1 manufacturers / 1 documents

Manufacturer	Series	Package	Documents	Available	Select specification
Fuji Electric	-	-	1	PDF HTML	Viewing

Online Datasheet

Read the Fuji Electric document online.

6MBP25RU2A120 FUJI

Document overview

Manufacturer or author: Provided By digicamel.com
PDF pages: 22

Technical content

Device Name: GBT - IPM 2 #3 3

3333 Type Name: 6MBP25RU2A120 _

Fe: Spec. No. : MS6M01047 _ gaze aa gads tee p=$25 ret Peet apeeé faaee gegeg EE 2asse S| pate NAME _| APPROVED PP A = | Fuji Electric Device Technology Co.,Ltd, DRAWN Tan -33 -06 linda. i aed oS —a er , 3 MS6M01047 toe CHECKED) = - hesadie. (ZH; wel 5 22 IT] H04-004-07b

Date Content Drawn | Checked | Checked | Approved fication date A Issued hi i J Ldan-23- 0b] Enactment ‘AGldedol{ Welanke |, Fthopsr date /” la lawcdin 7 oom sees SERe Bas: gies geoe Safe Hii eubeé a E333 & ge Hg Be2a3 gage gees Egdgs Fuji Electric Device Technology Co.,Ltd. | MS6M 01047 ” 99 a H04-004-03a

Package Outline Drawings . Package type : P610 togt Pee 95 +03 | 13.9203 67.4 | ° PoP Popa igi O18 | 2.5484 ae ] a Oe Fi oe tilnig lp epi... te (o) ~ I— 1 4 7 10 16 eee HE) |] B a | aa Siz] 4 P iZ . S2Rs Bale N e252 ees 5 S W y U see = a figs Set — Gey ite) QD ‘S) ges 2332 s23a 16-50.64 2-92.5 53385) S ih ap fi UL Mn =1- zeEes “ES FO cuppasruzai2o “ g22$a rel ca 25A 12009 JAPAN O gauze = Zacs3i resee Indication of Lot We. §=OOOOO TT Adered No. in monthly = Manufactured month (dan, ~8ep, :1~9, Oot. 0, Nov, Dec. :D) Last digit of manufactured year 3.22409 2, 5440.1 2.54201 ; | 222 . 62.5 it = (o1gl.8) a, || [8 tat el are Details of control terminals Dimensions in mm Fuji Electric Device Technology Co., Ltd. g) MS6M 01047 “59 FTI = 22 FY H04-004-03a

Pin Descriptions .

2.1 Main circuit

Negative input supply voltage. | oP | Positive input supply voltage. a

2.2 Control circuit

Block Diagram : ovecU Po Pre-Driver JGNDU Tr U, ovecY. iy ov pL] v, ovecW yo _ SRD gee i E358 2GNDW. wW, | Sz Ee Veco | Pst ° Ha | | ESEE Vink ae Tt i ; 1 74 A 2533 (GND $3285 ai ai. EFgEs SHEse ovinY euPse Tt S°8Ea Bess £6582 ovinz k fers ‘Tf ~9 N, Pre-drivers include following functions RALM || reed = 1. Amplifier for driver (ALM Tc Over Heating 2. Short circuit protection 4.5k Protection Circuit 3. Under voltage lockout circuit 4, Over current protection 5. IGBT chip over heating protection Fuji Electric Device Technology Co., Ltd. 3 MS6M 01047 5 oy = = I H04-004-03a

Absolute Maximum Ratings . | Tc=25°C unless otherwise specified. Bus Voltage pc Moc J oT 00 | | (between terminal P andN) [Surge | Voom | 0 | 1000 | v4 sot operating [vse | #00 | 00 | v_| © |collector Current om melo 5 7 ~ [cotiector Power Dissipation [One transistor“3 | Po | = | 172 | w_ | Peteeercwen te | g lime [ep [- | - | a & [Forward Current of Diode Tw TT 2'33 26] Notes 22353] “1: Voes shall be applied to the input voltage between terminal P-U(V, W) or U(V, W, B)-N. *2: Duty=125°C/Rth(j-c)D/(Icx VF Max.) x 100 *3: Po=125°C/Rth(j-c)Q= 172W (Inverter) *4: Vcc shall be applied to the input voltage between terminal No.3 and 1, 6 and 4, 9 and 7, 11 and 10. *5: Vin shall be applied to the input voltage between terminal No.2 and 1, 5 and 4, 8 and 7, 12~15 and 10. *6: VALM shall be applied to the voltage between terminal No.16 and 10. *7: IALM shall be applied to the input current to terminal No.16. *8: Terminal to base, 50/60Hz sine wave 1min. 3 6 2 / H04-004-03a

Electrical Characteristics . Tj=25°C, Vec=15V unless otherwise specified.

5.1 Main circuit

Collector Current Ices |Vce=1200V 1.0 mA at off signal input Vin terminal open. 8 |collector-Emitter Vee |1c=25A terminal | - | 19 | 22 | v_ | o Collector Current Ices |Vce=1200V A mi at off signal input Vin terminal open. o Base - fais rigs fom | = | = | - |v | BERS E252 | [Tum-offtime c=25A _Fig.1.6 2332 | trr = | VDC=600V Eefty Reverse recovery time 0.3 g25 33 IF=25A Fig.1,6 £E03¢ SSE ao Hate 5.2 Control circuit 5 gé 52 Ns ontrol circull £O285 B ge a2 Supply current of P-side Iccp |Switching Frequency 18 mA 3 2k 5s pre-driver (per one unit) = 0-15kHz = Ei Ess2a Supply current of N-side Iecn |Tc=-20~100°C #8582 . mA pre-driver Fig.7 Input signal threshold voltage | Vinth(on)| Vin-GND | _ on} 1.00 | 195 | 1.70] v_ | Alarm Signal Hold Time tALM Te=25| - | 20 | - | ms | Resistor for current limit |ram| sss: 1425 | 1500 | 1575 . . . g 7 iT Fuji Electric Device Technology Co,Ltd. |g) MSsé6M 01047 22 }— = | H04-004-03a

5.3 Protection Circuit (Vec=15V)

Over Current Protection Delay time | tdoc |rj=125% [| - [5s | - [os | SC Protection Delay time | tso [Tj=125°C Fig.8 | - | - | @ [us | IGBT Chips Over Heating TJOH '|Surface of °c Protection Temperature Level |GBT Chips Case Over Heating TcOH |VDC=OV, Ic=0A. 110 125 med Protection Temperature Level Case Temperature BRS 3 3 a2 6. Thermal Characteristics (Tc = 25°C) wese S328 Symbol Min. Typ. Max. | Units fote SEs Junction to Case Inverter | 1GBT Rth(j-c)Q 0.73 | °c Pget 8 2 SEES Thermal Resistance FWD Rth(j-c)D 2.05 "CW aeag 22a . % = g 3 : 8 Case to Fin Thermal Resistance with Compound Rth(c-f) | - [005 |= | sow | 35335 aBs 38 *9: For idevice , Case is under the device 2 8 Be 7. Noise Immunity (Vdc=300V, Vcc=15V, Test Circuit Fig 9.) 2BEas Bezze a8 a 8 Common mode Pulse width ‘us, polarity +,10 minuets +2.0 kv Estee P 2 3 3 3 3 rectangular noise Judge: no over-current, no miss operating Fasse Common mode Rise time 1.2us,Fall time SQusinterval 20s,10 times} +5.0 kv lightning surge Judge: no over-current, no miss operating 8. Recommended Operating Conditions 9. Weight Fuji Electric Device Technology Co,Ltd. |S Msem 01047 8 22 | = || H04-004-03a

Vinth(on) Vinth(off) off Input signal t on _ 4 ' tr : { { H 190% Y -f\\ 1 90% { 1 ot Collector current i H ' i\\, fi 1 1 \\to% i rt ~ | inal i 1 ; jon, ! i toff ! Figure1. Switching Time Waveform Difinitions. off Nin I {lowside input) on i, Vge t (inside 1PM) —J |__gate off_j Ld a Bae py) ——f LE | Goma J __ ease (inside IPM) 1 ! i i normal_| e 82 e (alarm output) ‘ A ‘ 1 ‘ 1 3SEe taLMemax. (1) tALM>max. (2) tALM=2ms(typ.) @) a 8 fault: Over-current, Under-voltage or Over-heat =e ge Figure2. Input/Output Timing Diagram. eegt. ‘ 3 + 33 Necessary conditions for alarm reset (refer to © to @ in figure2.) A é 538 @ This represents the case when a failure-causing Fault lasts for a period more than tALM. 35a 3 > E #3 83] The alarm resets when the input Vin is OFF and the Fault has disappeared. SHE5e ,

23 FS ae @ This represents the case when the ON condition of the input Vin lasts for a period more

3 3 iS g than tALM. The alarm resets when the Vin turns OFF under no Fault conditions. Sass 3 gs s 8 @ __ This represents the case when the Fault disappears and the Vin turns OFF within tALM. coaee ge 4 3 The alarm resets after lasting for a period of the specified time tALM. 8820 Bs3re £8e5s| Fasse oft Input signal \\ on 0G -oncpfec| ona nnenenennnectet omen ne Collector current ' ‘ ‘ H ron { { rs a | Alarm output of { {alarm OL cece 1a 2 ot sce Figure3. Over-current Protection Timing Diagram. Period @: When a collector current over the OC level flows and the OFF command is input within a period less than the trip delay time tdoc, the current is hard-interrupted and no alarm is output. Period @: When a collector current over the OC level flows for a period more than the trip delay time tdoc, the current is soft-interrupted. If this is detected at the lower arm IGBTs, an alarm is output. a g aE Fuji Electric Device Technology Co,Ltd. |g} mseM 01047 ero] | H04-004-03a

Vee] P(U,V.WB) Vec P(U.V.W) 20k 20k IF Vee! vin ] © (_) ' Vee] vin] | w) (_) | sw \\ O) Ic sw ©) NO} I GND} I Close LJU.V.Wn) Open [__JUV,WBIN) Figure4. Vce(sat) Test Circuit (Terminal) FigureS. VF Test Circuit (Terminal) lec Veo. P —> () Veco Veo | 3 fs Veo Min 7 ol 7 PG eves HoPL- sev (Ai) Ba8e 4504 GND fsw GND 2 3s 8 o o a) Big: oga3 Pui 5 Figure6. Switching Characteristics Test Circuit Figure7. Icc Test Circuit SEES goRE ee iA maee e2o8 pita H H ras Io_/ Ic ae) Io} 22333 : , SHESE eae ee Tau Iau taunt 232 Es 8 Figure8. Difinition of tsc eee eu vec} |p CT. Fasse 1 ia Ww a ? 9 4700p Noise y o @ simulator 3) oO N Earth Lor) an Fin i Figure9. Noise Test Circuit | Fuji Electric Device Technology Co.,Ltd. : MS6M 01047 10 gl = : H04-004-03a

Truth table .

10.1 IGBT Control

The following table shows the IGBT ON/OFF status with respect to the input signal The IGBT turn-on when Vin is at “Low” level under no alarm condition. ADEZSViniIKMF SIGBTOON/ OFFS FRICHLET P5—LNIEK, Vink "L" UNIVE, IGBTISONLET, es

10.2 Fault Detection

(1) When a fault is detected at the high side, only the detected arm stops its output. 3 Ee 2 At that time the IPM dosen't any alarm. an i L7-ACRBERHALEBSA, RBLET-LOAWHEELLET. She OBS PMH SPI-LEWALEE A. ae g (2) When a fault is detected at the low side, all the lower arms stop their outputs ii i H and the IPM outputs an alarm of the low side. a2), FP-ASRM, UATE BU ARSE LISS Aare FP-LETORAEBIEL, PMA SPI-LEWALEF. e4eas Operation of IGBT =ones Cause of a . Alarm fi F g U-phase | V-phase | W-phase Fesse Uphase | uv | orf | = | * | + | High | [aon [ork [= or verase | uv [+ [ore | + | | High _| [iow [ore A [oc fo fs ff or | tow | [teow [= [= | = |_orF [tow *: Depend on input logic. 2 ’ H04-004-03a

Cautions for design and application . | (1) Trace routing layout should be designed with particular attention to least stray capacity 4 between the primary and secondary sides of optical isolators by minimizing the wiring | length between the optical isolators and the IPM input terminals as possible. ; DabAFSEIPMOA DP tin F MO Bese S BA KL, i DthAFIO—RAMEX RAO PHS BEVECLENG—VLAFINILT FAL. | j (2) Mount a capacitor between Vcc and GND of each high-speed optical isolator ; as close to as possible. BBIFLATIOVec-GNDAI=, AV FU PSH SEM RL TRY HFT FEL | (3) For the high-speed optical isolator, use high-CMR type one with tpHL, tpLH S 0.8ys. BiRItbAT SIE, tpHL,tpLHS0.8us, BCMRIT FEC RACES. 223s (4) For the alarm output circuit, use low-speed type optical isolators with CTR 2 100%. asge FI—LWABBIL, (BRIZHHASCTRE100%WNF4FEC ACL esze ee ee 5 (5) For the control power Vcc, use four power supplies isolated each. And they should be e258 designed to reduce the voltage variations. 2 FA g H PMB RVecis, RSNA BRERAL CCHS, Ek, BERWEMALRHELT PSL. ESE 2 35 3 g| (6) Suppress surge voltages as possible by reducing the inductance between the DC bus a EE 33 P and N, and connecting some capacitors between the P and N terminals. EL: P-NAL DISTR RSIETHE US 7S EL, S98E8 =. 4 ; y z Beas P-NiGF MILI FLY EGS SEL THY RESELL T Feb, a2550 i ae 23 {7) To prevent noise intrusion from the AC lines, connect a capacitor of some 4700pF gece : Easse between the three-phase lines each and the ground. ACSI UPDSO/AABASMCEDIE, SHER —F —AMIC4 7 00pFEOIY FU Y EIRRLT PEL, (8) At the external circuit, never connect the control terminal GNDU to the main terminal U-phase, GNDV to V-phase, GNDW to W-phase, and GND to N-phase. Otherwise, malfunctions may be caused. ‘BF GNDUCE Se F-U4B, fil GF GNDVES a F VAR, Hilf GNDOWE Stn FWA, ‘BMF GNDEEMFNENBELB CEMLEL TFS, REMEORAILGVET (9) Take note that an optical isolators response to the primary input signal becomes slow if a capacitor is connected between the input terminal and GND. ADMF-GNDEISAY FLY EET BL, IAAT S— RMA SIAT SiG SH A RGVET OCCERCESL. . : . s 2 4 Fuji Electric Device Technology Co,Ltd. |S) msem 01047 PP Ej . H04-004-03a

(10) Taking the used isolator’s CTR into account, design with a sufficient allowance to decide the : | primary forward current of the optical isolator. | DAHNFIO—RUBRIL, HE OPFHHSFOCTREB BLED IORBELVERHICLT FAL, | (11) In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the : thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. | Confirm spreading state of the thermal compound when its applying to this product. | (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) PERMIT (ICMAT SRS, MRBARRT SODA NILE SEC ECSU). | RM, BAHRMF RLY, SHARPE IYUT SE, AVNET AIRF SIC BDF, | BAECS LS RRERRICRMSRMBVET. AVNER OMRILIS, | BM aS MICA NIUE BA o TU SHEREREL TKEAL, a (BELEBICRFERYIST FLAY NGUEO RAV RGERAT OBMURET. ) Babe ad g : (12) Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the £ iu roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex aes 3 of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too i 3 : large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will z 3 2 3 3 be worse and over heat destruction may occur. 2 i 2 2 Fi AMIR RYT CHEE 100mm T100umE F, RH OMSL 10uM FISLT FAL. F Ei a3 BAEORYIMHHYT SCARRMERREECL, BKERICRET SRAMBVET. BSE2]| kh WARM EDMEMGSL ALBERT 1 OM ICRA CHARIRCEY, 25553] maminIRMaceaeuET. Fs 2 4 : B (13) This product is designed on the assumption that it applies to an inverter use. Sufficient examination is required 22355 when applying to a converter use. Please contact Fuji Electric Co.,Ltd if you would like to applying to converter use. AMIS. 4 /N—SAEA O BBE AIRC oh CHVET. IU N—-SRBABRSN SH Als, +PEBHADRCT. BL, AY NSN AOHN SBS ISR ESL, (14) Please see the [IGBT-IPM APPLICATION MANUALJ and [GBT MODULES APPLICATION MANUALJ. [IGBTIPM PFUS—YayvoaP7 LIRUGIGBTEYa—IL PFU Yay yaaF ib] SHS ICES). Ss = / H04-004-03a

Example of applied circuit : tem Peo FHT T Tat tad =F ee / . riest, ii | var | ~poe HBS zor | . ies vas Co Sumac “pee GT 22Es geez [ott | v ase8 “pee tH - rege i 3yas Armas re Esse . 2338 13. Package and Marking feat. Please see the packing specification of IPM (Technical Rep. No. : MT6M04140). eaeas :

23223 IPM #84 HEEMTOMO41404-G1SER EAL,

EE Ee g| 14. Cautions for storage and transportation = 3 5 FE » Store the modules at the normal temperature and humidity (5 to 35°C, 45 to 75%). Se MURA G~35°C, 45~75%) CRALT PAU, 'ge8a ¢ : i ze + Avoid a sudden change in ambient temperature to prevent condensation é 83 28 on the module surfaces. Eagse EVa—/ORDMGBLOUKS, BWTRERLERITTPAL, « Avoid places where corrosive gas generates or much dust exists. BRHAZORLIEM, MEO SBMS CFaL. + Store the module terminals under unprocessed conditions EVAN OMFISRMLOKUECRET SLL. . + Avoid physical shock or falls during the transportation. SEM IGRSS AU PERALYT PAL. 15. Scope of application This specification is applied to the IGBT-IPM (type: 7MBP25RU2A120). AMLHABIL. IGBT-APM (ist : MBP25RU2A1 20ST 5. 16. Based safety standards UL1557 j ic Devi g wav Fuji Electric Device Technology Co.,Ltd. |S) msS6M 01047 ‘ i = - 22 a H04-004-03a

Characteristics .

17.1 Control Circuit Characteristics (Representative)

_ Switohing fi Input signal threshold voltage — 1)=25'c. a Power supply aioe tye ing frequency ; vs. Power supply voltage(typ.) ---- Tense —— Weside i i t i g2 mee ” ” SS H i i i H = 10 te : por est) i L 5 A i 0 i i o i i i oO 5 10 6 20 a 12 1 4 15 1 W 48 Sys Switching frequency :fsw [ktiz] Power supply voltage : Yoo (¥) had gfe gas: =2So Bsze bad oc as Under voltage vs. Junction temperature (typ. ) Under voltage hysterisis vs. Junction temperature (typ.) S82e “4 1 tgs i i : #4 i H Hi T H i] eRe a = : i } : i £2525 Sr ee ee EO eens ees eee neces en eugse s j : i i i Fs i : i H i ones i i i i i es ee ee ee aesgo i H i H i i i i Hl H g2828 ° ° i i Eeged i a a en 2» 40 oo 6 10 0 140 £3225 vnet ion tesoeratura : T4(°6) Junction temperature © 1) () #4582 Alarm hold time vs. Power supply voltage (typ. ) Over heating characteristics 3 ToOH, TjOH, TcH, TjH vs. Veo (typ.) H H i T H 200 t T 3 i i [Testoorg i oT) Se ee a a ee ee ees = i j i i ° i H i i ° i A H { i 2 13 4 15 16 W ts 2 3 14 15 16 "7 1a Powar supply voltage : Yeo (¥) Power supply voltage : Veo (WP g 15 Fuji Electric Device Technology Co.,Ltd. g| MS6M 01047 2 a H04-004-03a

17.2 Main Circuit Characteristics (Representative) ‘

Collector current vs. Collector-Emitter voltage (typ. ) Collector current vs. Collector-Emitter voltage (typ. )

50 Tj=25°C (Chip) 50 14=25°C (Terminal)

o 7 0 . oO os 1 Ls 2 25 3 35 0 O85 1 6 2 25 3 a5 Gollector-Emitter voltage ‘¥oo {V¥] Collector-Emitter voltage :¥oe [V] 22Rs Base 2358 aise ae > 3 Collector current vs. Gollector-Emitter voltage(typ.) Collector current vs. Collector-Emitter voltage (typ. ) a eis n Tj=125°C (Chip) . Tj=125°C (Terminal) Beis Pop Pp eee £82 boob | Po vers i poobo GE b veestw PRES Fn a FS ee ee i es & H Hi 3 Hi Vi Weer iV t A A Fi 04 7 Voor 1aV Sigs ES PoE | Hl a H = Poboo| fs | g2528 3 mannan : oe 7 — 53335 a] ee ee a 2 er ee ee Oe | ee 25225 5 a ae 8 a ae Zizzo 0 “ L i o $2328 0 Os 1 502 28 a 3.5 0 Os 1 1S 2 25 3 as EH ee28 Callector-Enittar voltage :Veo [V} Gollector-tni tter voltage “Voe [¥} azote #8552 Forward current vs. Forward voltage(typ. ) Forward current vs. Forward voltage(typ. ) (Chip) (Terminal)

50 T T 50 T

ey aa 7 // = : i ] = E / LF H i a Lo : oO : ° i . 5 Zs a os T LS 2 25 3 35 oO Os 1 15 2 25 3 35 Forward voltage :Vf [¥] Forward voltage :¥f (V} Ej : Fuji Electric Device Technology Co,Ltd. |%| msem 01047 16 2 EI H04-004-03a

Switching Loss vs. Collector Current (typ. } Switehing Loss vs. Collector Current (typ. ) to Ede=600V, Voo=I5V, Tj=25°C 0 Edo=B00V, Voo=I5V, Tj=125°C 2 a 5 & i Eon & 5 En & H a & i 3 oe {Bort 2 i “ i 4 EOF | $2 oe La — LETT of 5 7 er g — H o 10 20 30 40 50 o 10 20 30 40 50 Gollactor current :le {A} Gof loctor curront :1¢ IA] 22S Base age?

258 Reversed biased safe operating area

fra EB € 100 Voo=15V, TjS125°C (min.) 10 Transient thermal resistance (max. ) a2¢ 39 z 2 : Pe Seno EE A ea 23224 5 50 ~ 8 SS ehh. Benet 2ESes 5 2 pest ee ie 22383 3 i Fd PEE ey He ee 2 ASO : © ot Pete a si eeecdasiitadt bnnhepchasit is SES5E 3 | “Ropatitive pulse) ! i SSE Ce a ead Bpese i i bob bidtloeedoebede bb ifewndade bE RAE Seegs H pun ped a Bezie ° 0.01 feed Eaeet sot £8823 o 300 600 00 1200 1500 0.001 0.01 ot 1 Bey 2g Gollector-Emitter voltage :Vco [V] Pulse width :Pw [sec] geste ea582 Power derating for 1GBT (max. ) Power derating for FHD (max. ) (por device) (er device) 200 100 r T = ~ : = 2 0b. . nd Dagens a ne : NI 8 é . ] é : i B sob severe ese secsucseenacel Bopha é senses Noses ese & i Fa i ; 0 0 * i 0 50 100 150 0 50 100 150 | Gaso Temperature -Te ["C] Case Tamerature ‘Te [°C] Fl 7 Fuji Electric Device Technology Co, Ltd. Z MS6M 01047 99 | = : H04-004-03a

Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)

5 Edo=600V, Voo=15V, T j=25°C 5 Ede=600V, Voo=15V, T j=125°C

o ee passed 3 4 . : Sah Le Loeeeed a) ne re ; g : 5 a i bd toff @ i 2 i : N s tn = tt £ : 3 tom & i | ; i ; i : oO 10 20 wo 40 50 o 10 20 0 40 50 Collector current <1 [A] Collector currant <tc [A] BERS az BES Reverse recovery charactoristios (typ. ) eegec trreirr vs. If 2ar eS : aai2 eB fon ye ere sone coer re uss efa:., y pee : | $2 ee cg eee eee ne Ee tre Tet ge825 a5 - : : 25333) B80 foc BZRESS ee irr Tis1250 Esass gzegé tepes 10 . 22823 0 10 20 30 40 50 eeued Forward current :1f [A] 2222 2abaa| s . Fuji Electric Device Technology Co,Ltd. |$| msem 01047 18 39 poof] S H04-004-03a

Reliability Test Test conditions and results Test Reference norms| Number|Accept-| Number] cate- Test items Test methods and conditions EIAJ of [ance of gories €0-4701 | sample |number| failure ‘Terminal strength |Pull force > 40 N (main terminal) Test Method 401 (1:0)

10 N (control terminal) Method I

Pull test) Test time 110 #1 sec. i a i Test time 110 #1 sec. method It i 3 [Vibration Range of frequency : 10~500 Hz Test Method 403 (7:0) i Sweeping time 215 min. Condition code B i Acceleration 2 100 ms* Sweeping direction: Each X,Y,Z axis | 2 Test time 2 6 hr, (2hr/direction! ia Set fo a Pulse width 1.0 ms Condition code B < Direction : Bach X,Y,Z axis $s Test time : 3times/direction 3 Solderabitity |Solder temp. 7 238 25 °C Test Method 303 (1:0) Immersion duration ; 5.0 £0.5 sec. Condition code A ees Test time 24 time Base Each terminal should be Immersed in solder 2352 within 1~1.5mm from the body. = 3a g Resistance to Solder temp. : 26045 °C Test Method 302 (1:0) Hogs soldering heat —_|immersion time : 10 £1sec. Condition code A S852 Test time : 1 time 3s: Each terminal should be Immersed in solder ge28 within 1~1.5mm from the body. tl] elem =e80 storage Test duration 21000 hr. Hid | Cie eae ET 225 3 EI storage Test duration 21000 hr. 22uis 3 [Temperature |Storage temp. 18522 °C Test Method 103 (7:0) £5335 humidity storage |Relative humidity: 85 25% Test code C Bes 83| Test duration 2 1000hr. é ES Fes Unsaturated Test temp. 2 120 &2°C Test Method 103 (1:0) oetee pressure cooker Atmospheric pressur : 1.7x10°Pa Test code E = 3 zes8| | 2 Test humidity 1 85 5% BRess| | & Test duration 296 hr. 32s $6 2 Temperature [Test temp. : Minimum storage temp. -40 £5°C | Test Method 105 (1:0) Bayes zg cycle Maximum storage temp. 125 +5°C| Esgea| | § Normal temp. 5~35°C 232s) | = Dwell time 2 Tmin ~ Tw ~ Tmax ~ TN Number of cycles: 100 cycles ‘Thermal shock 0 Test Method 307 Test temp. : High temp. side 100° °c. method I

5 Condition code A

Low temp. side 0° °C Fluid used : Pure water (running water) Dipping time : 5 min, par each temp. Transfer time 210 sec, Number of cycles _: 10 cycles s g@- Ke Fuji Electric Device Technology Co,Ltd. |g) mse 01047 1 90 | H04-004-03a

23526 Thermal [IGBT Rthg-cQ[ = | usix12 | cw

5s a° af a 33 resistance Rih(-op | - «(| USLx1.2 EEE lover Gurrent Protection| loc | LSLx0.8 | USL«1.2 E3588 egiee [Alarm signal hold time usixo.8 | USL«1.2 [ms | BEES ; BSiaa LSLx0.8 | USLx1.2 3; ag Isolation voltage Broken insulation | - _| E8220 Visual Visual inspection Fabsa| inspection Peeling The visual sample Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. i s , | Fuji Electric Device Technology Co,, Ltd. 2 MS6M 01047 2 39 HH 6 mo H04-004-03a

This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. RROBHRATH (EE, Bi, BRS) OBEN THERA. MARAE REMA CHAT SE, RF MBRT SHAMHVET,. 2. Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. F—-OQFRORRCRTIABRLEB SES RL, BA ERCEARROMIDESROLA—X RMILFL—A EDF AF TAR AURE MAL CCERLY. 3. When studying the device at a normal turn-off action, make sure that working paths of the turn-off voltage and current are within the RBSOA specification. BEOS—VAIMEILS SRF RBOBNOMICIE, SUA DEE BHO WAR ASRBSOMLRAICH SOLA ELT FAL). 4, Use this product after realizing enough working on environment and considering of product's reliability = a3 5 life. This product may be broken before target life of the system in case of using beyond the product's ase reliability life. fies RRORMRRETAHEL, NE ORMEBAMBR CESMRNO L. ANGEMALTFAL 3 z 5 RMOwMEs wes RALLIES, REO AREY MICRTOBIRT SBRMHVET. BERS bss 5 5. If the product had been used in the environment with acid, organic matter, and corrosive gas s 2 3 i (For example : hydrogen sulfide, sulfurous acid gas), the product's performance and appearance 5 a2 au can not be ensured easily. z | =e al Ei A D BRE A (GUCAR, BRRAAS) SACHA CR RENBA, a By H 3 SAE MRE O RELRLADET. EFgeas é ae 26 6. Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). 3 aie Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. & 35 28 Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of 3 23 5s equipment which use this product. In application which has such frequent rise and down of Tc, & 83 gu well consideration of product life time is necessary. ESsS2) AMIS, AIO OIL MA—IUP CORAA PSL GRATIEHINO: MTSF12959), NIV AD AARITIECO A TILSBS OMI, ATI kSBAMHVET. THUS —ABET)O ER FRICKSMALLA THY, AMRECEAT SIRO RALET. 7—-ABEOLA PEA RIECOBS Id, MAH RITA BELTCEA Pav. 7. Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. EMF RU AEFI NES-A TEBEEETFEU WFORBILLY RMF REESTSROTBEMHVET, Ss _t_ Fuji Electric Device Technology Co.,Ltd. H04-004-03a

According to the outline drawing, select proper length of screw for main terminal. : Longer screws may break the case. AMRIT SEMF AOA ORSIL, HERING MELGRE Fal). FUBRWET—-AMBAT SBAMBVET | 9. If excessive static electricity is applied to the control terminals, the devices can be broken. | Implement some countermeasures against static electricity. HF IAC EAMM MSHS, BF MBRT SBAMBVET, FRY IRL LH BAM AEE T FEL, Caution 1. Fuji Electric Deveice Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted 2235 from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep A z 5 3 safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. Pees BL BRT A27 9/07 SAT BRO BH CBRE LISS) THEFT. LOL, EARS ERASE ELI, 3a52 ROT SRARHVET, SL ERLE B AM RORMELISROED, MRELTAS BA KSI LSM EI Ege H WT SRS PHAMGAS ECoG ESIC RAH - EMEA - ROEM LRH ERS RROLOO FRE Bese MUTFAL), 3 ae PE 2. The application examples described in this specification only explain typical ones that used the Fuji : 25 3 g| Electric Deveice Technology products. This specification never ensure to enforce the industrial property g 23 33 and other rights, nor license the enforcement rights. SESS2) -SEHMPSIEML TH SGMBIS, BEET N1277/07 MEE EALERRMCE ADEM S40 THY, 2 é ize AHERB ILL CLAM AM. FONE HO RGM TS REI (SRE O HBS TILO TLBVELA, eBEas z £3 36 3. The product described in this specification is not designed nor made for being applied to the equipment z ae bs or systems used under life-threatening situations. When you consider applying the product of this 23: 33 specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submatine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. AMHARIEMENER GIL, APICDDDSLIGAAP CH MENSRESAMELAT AISA DNSCLE BME CHE SEENEEO CLHVECA, ALHPONRE RHE. MOAN. MEER. ERE. RED ‘aE, ABE DP HERES OS SUMED AT LE RANA OCAMECRNOMIS, VDATLERRUERAAIC BET SCLECHROL, CMAPS. if there is any unclear matter in this specification, please contact Fuji Electric Deveice Technology Co., Ltd. yl Ld Fuji Electric Device Technology Co.,Ltd. =} “ H04-004-03a

Selected Specification

Fuji Electric 6MBP25RU2A120 overview.

Overview

6MBP25RU2A120 is listed in the IC category. Available datasheets include documents from Fuji Electric. DigiCamel provides a local PDF and searchable HTML technical text for online reference.

Summary

IGBT - IPM

Description

IGBT - IPM

Source title 6MBP25RU2A120 Datasheet(PDF) - Fuji Electric

Related Parts

More parts from the same family.

Browse manufacturer