6MBP20RTA060 FUJI
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Device Name : IGBT-—IPM : Type Name i 6MBPZ2O0RTAO60O | SE5E Spec. No. : MS6M0713 | presi 2ue2e Fuji Electric Co.,Ltd. Matsumoto Factory bom Vrs <7 Aa Fuji Electric Co.Ltd. [est e=- 2 Gol aJMSOMOTI3 vee FEY HO4-004-07a ai
Classi- Applied Check | Check | Appro Date | fication Content date Drawn ed ed ved 3 . ral Enactment issued A. Kea S023 ate Acted. (Wana foc {lla [Co + Blocke Diegra. . xityed| Sep. 2f evi a atin fr dk in va Tipe ane jeos, {Revision -Exanle oti cious? asunck: onal 7 Sep, 25, Changing manufacturer . Miaeenelt \\ aa of shunt. resistor from | (diizane Lawh—ny_/\\ noo |ltevision | A frcenth So THVosh taba T bests ibe are g2i3¢ ath eesee Begse Fuji Electric Co,Ltd. E|MS6MO713 222 H04-004-06a
- Package Outline Drawings 9+iZE4 F Zs =5 a Bo eg so 5 5 8 ss mn 2a e ears jas 2S c= = gaits e Ede Oo t Sebo | et E Steeces o eee hege 0 gireeiae 2 = s—4—E tt. nhectime 3 as e Cy) Fe5$ | e383 2 = 1 eoval Betas | Beles = L D- = 4 SH she ale” oe Fel EBeFS8 2 : By atte —_— Bagee q | | a i BEeges & | i 2S522 e ale | |G — . Fc es ee nr @ “Vs ’ >i oe = if * o | em a P= ' | —| 2 |/8 J | oo PEERS ha ee Ge cy | Fs) ol CE | law al | [| — < Neat I. i 5a Fuji Electric Co.Ltd. 2|MS6M0713 3/22 HO4-004-03
- Pin Descriptions Y@-FJE Re , Main circuit =EIR |___P | Positive input supply voltage. | Control circuit # ELE [Na | Symbol | Description |@ | GNDU [High side ground (UW. | @ | Vin [Logic input for IGBT gate drive (U). | PO [ [a | Fuji Electric Co,Ltd. [g|MS6MO713.— 4/22 Pe H04-004-03
- Block Diagram FOv7R ‘ PUT Tatas tree sree rs sere ree ere eee meee meee renee eeeeeeey ‘ Pre-drivert P H ' Gvecu © © Veo ond ' Vin SIN gp OUT ! cane © a ' Pre-drivert ' ®veev 4 : © Veo OH 1 sen % * Ovinv OC OIN gyn OTD : @endv () a Ov ' Pre~drivert ' Oveow O Q Vee ond ' 7 song ZN ' ®vinw OC) OIN go UTD H t x Lo H @cnow ©) © w 7 1 ' Pre~driver2 ' sues i OHK 4 ' SEES Vee O vce senox d__¥ ZN ! Bogie H OUTX ' gees ! : eee t t — PE3Pe t i - 22225] @vinx O SINK ' gef3t T OHYS ' Bs32s H scnpyd.___¥ ZN : ERESE| Gviny oO ry INY outy g ' EEE5S ! ' ESSgs] @vinz O OINZ ' peBig ' © N1 Bsa : OHZ 4, t geeze ALM senozd ' Fasee Gam e ourz as Ri ® ' ' RALM 4m} 1 15k WEA PGND O N2 ' oc oy ‘ \\ GND t t Oo ' @anpn O \\ 7 ' eee nee n nee en eee ee ween we eee eee cence ence ee cece eee e eee eeeee ene n ee! Pre-drivert includes following functions. Pre-driver2 includes following functions. (P-side) (N-side) 1. Amplifier for driver 1. Amplifier for driver 2. Under voltage lockout circuit 2. Under voltage lockout circuit 3. IGBT chip over heating protection 3. IGBT chip over heating protection 4, Over current protection 5. Alarm signal output. [Tat Fuji Electric Co.Ltd. z/Ms 6M0713 = 5/22 EF a H04-004-03
4.Absolute Maximum Ratings #ixtmAEHR : Tc=25°C unless otherwise specified. Poteet | in | ax | nit Ce i Bus Volta; (Between terminal P and N) [st owning | wee | 200 | oo | v | joo | ce PH | me a Collector Curent ims | tw | ~ | wo fa Collector Power Dissipation | orevansitor#a | Po | — | 10s | w | Input Signal Voltage #8 |_vin_ | -05 | vecwos | v | Alarm Signal Voltage *6 VALM 3ezs Alarm Signal Current *7 TALM | — | 20 [| ma | — #825t £23 a2 Storage Temperature Tstg | 40 | 125 Key feise EBgs8 - eo cee Isolating Voltage . Bers Hae (Terminal to base, 50/60Hz sine wave Imin,) Viso | — | Ac2500 | V Bagse
3 Fs A i Screw Torque Mounting (M4) | - | -| 20 [nem _|
25222] Note %1 :Vces shall be applied to the input voltage between terminal P and U or V or W, N and U or V or W. #2 :Duty= 125°C/FWD Rth(-c)/(Ic X VF MAX)=125/2.7/(20 x 2.6) x 100=89% #3 :Po=125°C/IGBT Rth(-c)=125/1.21=103W *4 :Vec shall be applied to the input voltage between terminal No.3 and 1, No.6 and 4, No.9 and 7, No.11 and 10. *5 :Vin shall be applied to the input voltage between terminal No.2 and 1, No.5 and 4, No8 and 7, No.12,13,14 and 10. *6 :VALM shall be applied to the voltage between terminal No15 and 10. +7 :IALM shall be applied to the input current to terminal No.15. *8 : Immersion time 10+ 1sec. Ta] Fuji Electric Co.,Ltd. ACS 6M0713 9 6/22 ERA =a | Ho4-004-03 |
- Electrical Characteristics BRHtHtE ‘ Tj=25°C, Vcc=15V unless otherwise specified.
5.1 Main circuit [BIRR
Phen | Sy [Genie [om || on | Collector Current at off Vce=600V 10 mA signal input Vin terminal open. . Colletor-Eitter Terminal | - | - | 22 | v | turation voltage VCE (sat) | Ic=20A | r- | Forward voltage of Terminal | - | - | 2s | v | VF ~Ic=20A nto re ec Reverse recovery VDC=300V tr . Maximum Avalanche Internal wing inductance=56nH Energy PAV Main circuit wiri md ws lain circuit wiring (A non-repetition) inductance=179nH | BEE pace ag 3 de 5.2 Control circuit fil — ESRF Supply current of Prside| | | Switching - 25 go pre-driver (one unit) i Frequency:0~ 6kHz mA 22363) | Supply current of N-side To=-20~ 100°C esses . a 28 Seeie pre-driver Fig.7 ag 3E Input signal threshold voltage Vin(th) Vv 252 2 : Input Zener Voltage Vz Rin=20kQ2 | - [ao] - | v Alarm Signal Hold Time tAM | Fig2 To=25°C | - [20] - | Shunt-Resistor for Between terminal mQ over current sense Nt and N2 Fuji Electric Co.Ltd. MS6M0713 0 7/22 FAX a H04-004-03
5.3 Protection Section {RHéBR (Vec=15V)
tam | Smit Sdn [oi Over Current Protection Level of Te128°C 40 A Inverter circuit Over Current Protection Delay time Tj=1 25°C [- [5 | - | us | IGBT Chips Over Heating . Surface of Tj 1 Protection Temperature Level OH | i@BT Chips 50 °C Vv Under Voltage Protection Hysteresis va | fozfos| - | 6. Thermal Characteristics #4$tk (Te=25°C) ee Junction to Case wear | rewired | = | - | 121 | Thermal Resistance *10 FWD Rth(j-c) | - [| - [270 | c/w Case to Fin Thermal Resistance with Compound Rth(c-f) | - [005 | - | #10:( For Idevice , Case is under the device ) 7. Noise Immunity /4 ARTE (Vde=300V, Vec=15V, Test Circuit Fig 5.) as 3 33 Common mode | Pulse width lus,polarity +,10 minutes +20 kv fee ag rectangular noise _| Judge:no over—current, no miss operating ~~ — 282231 | common mode | Rise time 1.2us, Fall time 50us _ gazes 101 bee ae Interval 20s, 10 times 5.0 kV efsse lightning surge + . BSEE5 Judge :no over-current, no miss operating eBSEE eas ££] 8. Recommended Operating Conditions HE32Bi(F2e(¢ gps? By u Item Symbol [ min. | Typ. | max. | Units ee588 Egsee 9. Weight Be ee ec ee 5 1 a . s 4 Fuji Electric Co.,Ltd. z/Ms 6M0713 = 8/22 EY = a H04-004-03 i
10.Truth table RE(EH
10.1 IGBT Control IGBT lf)
The following table shows the IGBT ON/OFF status with respect to the input signal Vin. The [GBT turn-on when Vin is at “Low” level under no alarm condition ADM SViniIZWF SIGBTOAY A/AIE FRICHLET. Vind*" Low" VAIL, HOP I— LA RUE CIGBTISAULET.. Input (Vin) Output (IGBT)
10.2 Fault Detection AMEE
(1) When a fault is detected at the high side, only the detected arm stops its output. At that time the IPM doesn’ t any alarm. LP -ACHEEBELEBS, RBULEP-LOAMHEBLLES. COMBA, PMP S—IMESIZSHALELA. (2) When a fault is detected at the low side, all the lower arms stop their outputs oes and the IPM outputs an alarm of the low side. pars FP-LCARERULEBSA, FP-LE TOMAEEILL, PMD SP S—LESELAL 2055 of | High side | High side | High side ; Hae _| fault (ephase) | (W-phase) MM BEetE| tien side [wo | oorr | | sie 2223s SSEUEIREI IF =PSEEEEEE Wenmmeeoememee aeEmme=meeen an Hts] tien side [uv | Torr Te |i io *: Depend on input logic. E ta Fuji Electric Co,Ltd, MS6M0713 —iia2 EA a HN4-004-03
- Cautions for design and application 21+ AIC RLCOERA 1. Trace routing layout should be designed with particular attention to least stray capacity between the primary and secondary sides of optical isolators by minimizing the wiring length between the optical isolators and the IPM input terminals as possible. JHbAFZEIPMOA As F MO RREBABKL, PFbAFIO—RAME—RMNOPBARE VECLIE RA-VUAIPOMILT RAL. 2. Mount a capacitor between Vcc and GND of each high-speed optical isolator as close to as possible. BIANFIO Vec-GND MZ. IV FL VERSE EEL TRI MT TRS. 3. For the high-speed optical isolator, use high-CMR type one with tpHL, tpLH S 0.85. BRItbAT TIS, tpHL, tpLHS0.8us, BH OMR S14 FEC RACES. 4. For the alarm output circuit, use low-speed type optical isolators with CTR = 100%. FS LBABBIS (ERIFbNTS CTRE10NOS1 FECES, 5. For the control power Vcc, use four power supplies isolated each. And they should be designed to reduce the voltage variations. ‘PNA Voc (k, HARE GREE CAL. Ek, BERMEMALRHELT PSL, seers 6. Suppress surge voltages as possible by reducing the inductance between the DC bus P re and N, and connecting some capacitors between the P and N terminals 3 i i is PNM OARS RSE 09 SU EL, PONE ISI FL ERT BEL CHE q PRPs E@ERLTFAL. 23 235 7. To prevent noise intrusion from the AC lines, connect a capacitor of some 4700pF it between the three-phase lines each and the ground. : : ise AG SAUDBO/AABAEMCIAIZ, SALE —P AMIDA 7O0PFEOAY FLY EEL TRL wal 8. At the external circuit, never connect the control terminal GNDU to the main terminal 3 23 a U-phase, GNDV to V-phase, GNDW to W-phase, and GND to N-phase. Otherwise, at malfunctions may be caused. _ ‘fF GNDUES SF U4d, HIF GNDV £2: tm V 4B lf GNDW £2: oF WB, fit GNDES ti N EELS CHERLEU CSL, RO FORBILGVET. 9. Take note that an optical isolator’s response to the primary input signal becomes slow if a capacitor is connected between the input terminal and GND. APMeF-GND PUISALY TU ERERT SL, DtbAFI—RAMA AES IMT SHSHMMR VET OCCA. 10. Taking the used isolator’s CTR into account, design with a sufficient allowance to decide the primary forward current of the optical isolator. PHEAFIO—RA BRL, SEVOPFEAFIOCIRES RL, +HICRBELOEBHICLT FAL), Fuji Electric Colt. —|2|MS6MO713_— 2/22 A Lt | H04-004-03
- Apply thermal compound to the surfaces between the IPM and its heat sink to reduce ‘ the thermal contact resistance. PRARBMEIE DECT Ste WIC IPMEE—bY DI OMICS VLA NILES RALT PAL, 12. Finish the heat sink surface within roughness of 10um and flatness (camber) between screw positions of 0 to +50ym. If the flatness is minus, the heat radiation becomes worse due to a gap between the heat sink and the IPM. And, if the flatness is over +50um, there is a danger that the IPM copper base may be deformed and this may cause a dielectric breakdown. Eb DO RMOL LIL, BS1OuUMU, HOME CO FIERY) Ik, O~+50umMELT PAL, FI | BVAFADBE, Eb Y 7 EPMO ISM AS CHAS MELET. Hie. FBR A+ SOumU bOI | PIP MOEA -KMIEELIGRMURERET BIREAEUET. | | ; | , 50m a 0 ' | oe | \\ 2gek [est sink sgies | 1 seis i nn, pede On & g2g28 Mount ing holes | fest ' 88525 + 7 EBSE5 ' | Bi23 pees s | 13. This product is designed on the assumption that it applies to an inverter use. Sufficient Ere 52 examination is required when applying to a converter use. Please contact Fuji Electric Co.,Ltd 2g8 i & if you would like to applying to converter use. reeee AMIE, (UN—-FARA ORME EN CHIE INFRA EN SHAE. TREBHOBS CST. L. AYN FN BASH SS SBI CESLY, 14. There is thermal interference between nearby power devices, because the P619 PKG. is a compact package. Therefore you measure the case temperature just under the IGBT chips that showed in report MT6M04858, and estimate the chip temperature. RyT—VENEUEL TH SED, NI-RF ORF BMBADNET EN&, FIP REE IEDS MTEM04858 LRT FYFE FOT—-AREERELTHIOT PAL. 15. Please see the [Fuji |GBT-IPM R SERIES APPLICATION MANUAL RH983J and [Fuji IGBT MODULES N SERIES APPLICATION MANUAL RH982]. [BLIGBT-APM RLY—A PFS —VarvaaP yy RHB3IIRUIIGBTEYa- NUU—X PIU —Vay VIA /LRHB2IE HS REEL, i Fuji Electric Co.,Ltd. A MS6M 0713 S99 H04-004-03
- Example of applied circuit AHR @ cetcaster TO OVE FF O: ™~ - Sr sony D aoa Db fae D (er it rl its, “9 BH t Ow | ath. ow Ne bEEs 13. Package and Marking #A@UL#& zBs2 gigs Please see the MT6M04140 that is packing specification. o3e8g _ Eesay BEALE MT6MO4140 AiMSHRCHAL. 2 FES 14. Cautions for storage and transportation AR, BHELOES nt i +Store the modules at the normal temperature and humidity (5 to 35°C, 45 to 75%). sa328 Epese HR MIB(6~35°C, 45~798) CRALT FAL, Bh 3g «Avoid a sudden change in ambient temperature to prevent condensation on the module 2385 begs Hy surfaces. egehe geile EVa—-ORAMABLEWES, BAB EIERIT CRE, -Avoid places where corrosive gas generates or much dust exists. BRHAORESM, HBOS MBMLETT RAL, *Store the module terminals under unprocessed conditions EV1—WO iF ISAM LORECRETSCE.. i Avoid physical shock or falls during the transportation. | MICH RESALVBPERUUT RAL, 15. Scope of application Ji F#iH This specification is applied to the IGBT-IPM (type: 6MBP20RTA060). Att HEBEL IGBT-IPM (23% : BMBP20RTA060)IZBAT So 16. Based safety standards PARR UL1557 Fuji Electric Co.Ltd. A MS6M0713 = 14722 EES [t] HN4—004-03
- Characteristics(Representative) . Htth —F ( RRB) 17-1. Inverter 4UK—-BR Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage Tja25°C (F y Fiat) Tj=25°C (E23 —) ia Fe) 40 40 3 | aA | | 3 i : j { i 0 < 0 0 05 1 #15 2 25 3 0 05 1 #15 2 25 8 Col lector-Emitter voltage : Voe (V) Collector-Emitter voltage : Vee (V) Syes Past Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage ge ee Tjs125°C (F y Fite) Tj$128°C (EY 3. — Lie HE) ere 40 40 ERRES z i i i } Voo=18V z H i i i Veo=15V Sif 2 H i i Voo=17V i 2 H i | Moos U7 seeee i i i H i é H i i Vj, ‘ | B-BSs 3 i i H t 3 i t | i i H esis & ee ee) Ae eee £ i VA i eeiss 0 Lee 0 is !
0 O85 1 #415 2 25 3 0 05 1 #15 2 25 38
Collector-Emitter voltage : Vee (V) Collector-Emitter voltage : Vee (V) | Forward current vs. Forward voltage Forward current vs. Forward voltage | (Fy Fiat) (EY 3— RF) | 40 40 | 20 a ee ae 20 ssnnefnnnnennte neste annepes “ Hl i 125°C i H i 15% 2 i i 5°C 2 i i Lf 2e B29 nnn fanned B 20 esennne freer ne nnn
5 H H j 5 i i f
0 0.5 1 15 2 0 0.5 1 1.5 2 Forward voltage : VF (V) Forward voltage : Vf (V) ara Fuji Electric Co.,Ltd. MS6M 0713 15/22 ET [1] H04-004-03
i Switching Loss vs. Collector Current Switching Loss vs. Col lector Current. i Edc=300V, Veo=15V, Tj=125°C Ede=300V, Veo=15V, Tj=25°C. i a? _2 | 3 t i i \\ i { { 3S i i i H i i i Dees en ee ees aes ee CD ee ee ee ee ee ee 3 eee 3 pe Err | By) bial & aa i 0 5 10 15 2 2% 30 35 40 0 5 10 15 2 2 30 35 40 Collector current : Io (A) Collector current : Ic (A) ed a3 Reversed biased safe operating area . . gases Voo=15V, Tj S125°C Transient thermal resistance Busey 50 10 Geen eeies ! 1 i i i | e a ee Are eanee eae SEras ee ee 7 ——— Ee e222 m Se eee es SOE SOO SO RO 2 EEE ar. B22 » 4% pocoeprmpr tet B Gece E2825 5 i i i i : ~ AT > AT Bese 2 i i H { i s ae eer eee 0 100 200 300 400 500 600 700 0.001 0.01 04 1 Col lector-Enitter voltage : Voe (V) Pulse width :Pw (seo) Power derating for GBT Power derating for FWD (per device) (per device) 150 50 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Case Temperature > Te (’C) Case Temperature : Te (°C) Ea Fuji Electric Co.,Ltd. MS6M 0713 16/22, PT] H04-004-03
Switching time vs. Collector current. Switching time vs. Collector current Edc=300V, Vec=15V, T j=25°C Ede=300V, Vec=15V, Tj=125°C 10000 peeer pen ESEEE EE EE EEO EEPEEE 10000 peepee SEER EEE PERE PEED 000 a a 000 PoP Et ten 100 bere eet ee £10 eee bed H Hi Hi } t i 3 i H i Hi i H 10 10 0 5 10 15 2 2% 320 35 0 5 10 15 2 2 30 3 Collector current : Ic (A) Collector current : Io (A) esis £2325 ges: aiais Psst oe Fuji Electric Co.,Ltd. MS6M 0713 17/22, Pt H04-004-03
17-2. Contro| Circuit . ‘all ATED Power supply current vs. Switching frequency Power supply current vs. Switching frequency Tc=100°C Te=25°C 6 6 ° i { i Voo=15V @ i | { 4 Veo=15V 2 i i i 4 Voo=13V- = i i j { Voo=13V- Es i bt Voo=t7V E i bese zy Voor oY H | e222 Voo=15y a i bes dt 2222 | Voo=t5V 1& 1 0 5 10 15 20 B 0 5 10 15 20 25 Switching frequency : fsw (kHz) Switching frequency : fsw (kHz) Base Input signal threshold voltage yj.o5%6 Under voltage vs. Junction temperature go3* vs. Power supply voltage i, 4 BeSey na> Tiet25°C T | | eoees ze H | i i Hl i i i i i 32 z az 215 sw oanasiocec aoa ety ad a es a a a es "EL Bs i i H i i = i i i i Hi ®88sz we H H i ! i 3 i } H t H g225s 2 i i i j i H H j i { 25222 i i | H H 0 sees 0 2 40 60 80 10 120 140 2 13 1415 Ta Junction temperature : Tj (°C) Power supply voltage : Veo (V) . Over heating character istics Alarm hold time vs. Power supply voltage TjOH, TjH vs. Veo H i i i H 200 i i i i i s : i tt i 3 berardereetpe reds n 36 EE Ee | g a BD fa 2 brveeeeretbeseeeeeeecieensseneeche TGR DE°C wrereenndonnennsee Be i H i H i 3 i i i { H ee : i i i { 3! poe Bg ee ee e 1 i i i i we i i } i i = po i i i = i itr | |
0 Ss 4
2 8 4 1 6 7 18 2 oe 4 8 oe Uf Power supply voltage : Veo (V) Power supply voltage : Veo (V) Fuji Electric Co.,Ltd. MS6M 0713 18/22 a TI H04-004-03
- Reliability Test Items {2AitHtHI5 A Test Reference norms | Number |Accept- cate- Test items ‘Test methods and conditions EIAJ of ance gories £D-4701 sample |number Terminal strength [Pull force > 40N (main terminal) Test Method 401 (1:0) Fa 10 N (control terminal) Method [ (Pull test) Test time 210 #1 sec. lee eee | ee | sp 43S BE Test time 210 #1 sec. method IL 3|Vibration Range of frequency: 10~500 Hz Test Method 403 (1:0) i) Sweeping time : 15min, Condition code B Acceleration + 100 mis? # Sweeping direction: Each X,YZaxis 2 [Test time 1G hr. (2hr./direction) = | 4/Shock Maximum acceleration : 5000 mis? Test Method 404 (4:0) | ete ee feed £ Direction : Each X,Y,Z axis 3 [Test time 13 times/direction = Solderabitlity [Solder temp. 1 23545 °C Test Method 303 (1:0) ATE HE Immersion duration —: 5.0 40.5 sec. Condition code A [Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Resistance to [Solder temp. 1 260 #5 °C Test Method 302 (1:0) soldering heat —_ Immersion time 110 41sec. Condition code A (LATS [Test time 21 time Each terminal should be Immersed in solder within 4~1.5mm from the body. 2 $3 & storage MS(RYE [Test duration 11000 hr. 5o230 storage {Gi8{R7F _|Test duration 21000 hr. eeuPre humidity storage {Relative humidity —: 85 45% Test code C 5s g5a fepstonieted Test duration :.1000hr. £5235 ‘Unsaturated Test temp. 7 120 £2°C Test Method 103 (1:0) £8363 pressure cooker [Atmospheric pressure : 1.7x10°Pa Test code E eBsos # FL y-4¥—9yA— [Test humidity 1 85 5% Zeres 2 Test duration 196 hr. geeze 2 Temperature Test temp. + Minimum storage temp. 405°C Test Method 105 (1:0) pege2] | 2 | foyce Maximum storage temp. 125 :5°C 3835? 5 wey Normal temp. 5~35°C Begs s Dwell time + Tmin ~ Tx ~ Tmax ~ TN 2suiz Number ofcycles _: 100 cycles ~ Thermal shock 0 ‘Test Method 307 (1:0) RAE Test temp. : High temp. side 100° °c method 1
6 Condition code A
Lowtemp. side 0c Fluid used + Pure water (running water) Dipping time : 5 min. pareach temp. Transfer time 2 10 sec, Number of cycles __: 10 cycles 3 ma Fuji Electric Co.Ltd. MS6M0713 9 i9/22 HA 5 [| J 04-04-03
Test Reference norms] \\) aya, (Accept lcate- Test items Test methods and conditions EIA, | reamojefance \\gories £4701 Pe number | t[High temperature | Test temp. > Ta= 125 45°C Test Method 1015 | (1:0) reverse bias (Tj S 150°C) PRB APA Bias Voltage : VC = 0.8*VCES Bias Method : Applied DC voltage to C-E Vee = 15V 2 Test duration 21000 hr. 8 | 2]Temperature Test temp. 7 8542°C Test Method 102 (4:0) @ | [humidity bias Relative humidity 1 8545 % Conaition code C é amie 472 — | Bias Voltage : VO =0.8xVCES
5 Vee = 15V
a Bias Method : Applied DC voltage to C-E ‘Test duration 11000 hr. Intermitted ON time 72sec, Test Method 106 (1:0) operating life OFF time : 18sec, |(Power cycle) Test temp 2 A Ti=100 #5deg ba Tj S 150°C, Ta=25 35°C Number ofeycles __: 15000 cycles 19. Failure Criteria Bene He Cherasevsie | Symbal sere : _ peed Electrical Leakage current ices | - ‘| _UsLx20 Begs eae . agase characteristic [Saturation voltage veg(sa)| - | _ustx12 EBeES BAM [Forward voltage [ove | - | usixt2 2Fat heme fet [Rinie) [=| usixi2 Bggn5 resistance |Fwo | Ringe | - | usixt2 ga025 Lsix08 | USL*12 Bebe . cbse [Alarm signal hold time Lsix0.8 | USLx12 EEESS , , — gees¢ Isolation voltage Broken insulation [ - | 333 ae Visual Visual inspection Be 3 3 Hy inspection eeling The visual sample epee SHARE Plating E2828 and the others LSL : Lower specified limit. USL : Upper specified limit. Note: Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. Andin case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. i ss 5 s &G Fuji Electric Co.,Ltd. 8|MS6M0713 = 20/22 HH Ss [|] Ho4-004-03
Warnings #& 1. This product shail be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. RROBARALB (EE, BH. RES) OWAATHEA TAL, BHRACHEMA THAT SL, REM WRT SRGMBVET. 2. Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. B—-OFEORRCHTI ABEL ACSA, BAERCARRO MIDE SROLA—XRLIL—h-E QF TCARBUREMLY TES. 3. When studying the device at a normal turn-off action, make sure that working paths of the turn-off voltage and current are within the RBSOA specification. And ,when studying the device duty at a short-circuit current non-repetitive interruption, make sure that the paths are also within the avalanche proof(PAV) specification which is calculated from the snubber inductance, the IPM inner inductance and the turn-off current. In case of use of |GBT-IPM over these specifications, it might be possible to be broken. WEOS—LVAPMMEIBU SRF RBOBH OMICS, SLA TEE BO MBA RBSOAL RAILS a CeRMRLT SL. Fic, HELO GS BAREIS SRF RBOBMICML TIS, APN YF OGRE pais IPMART YS 99D ARUS—LA TBD SA WEN ST NGL cit (PAV ILA CHOBERALT Fal), FETE! CASOLHERA CRIT SL, REMMI SBAMBYET. seiig 2 ee ae 4. Use this product after realizing enough working on environment and considering of product's reliability #2 22 life. This product may be broken before target life of the systemin case of using beyond the product's 53225 reliability life. c2iss NROCMRRET HIRE, SLOMELAHMAR CEOMANO L AMREMALT FAL, MAOIEME peee? HEATERS BHO BAH LU MICRE ART SB AMBVET. Bagge 283 ae 5. If the product had been used in the environment with acid, organic matter, and corrosive gas zg 3 a5 (For example : hydrogen sulfide, sulfurous acid gas), the product's performance and appearance 235 3 FS can not be ensured easily. Bai BRAA GUAR, BRAS) ESCORT CR MENA, DRE HME O EES RLIMAET. 6. The thermal stress generated from rise and fall of Tj restricts the product lifetime. You should estimate the ATj from power losses and thermal resistance, and design the inverter lifetime within the number of cycles provided from the power cycle curve. (Technical Rep. No.: MT6M4057) RROw HS RAREOLRE TRICK TRLOMAPLATREVET, RE RUET DG A TEHEL, NI | YA IWR BN—IJ CREST 4 IIRL EE, (NFO BRERALT FELL EIN. :MT6M4057), 7. Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. EMFROGMMBFILEAESATEBSEBUTHA, HFORBICKY RP RGESSSHECTRS MS BVET. 8. If excessive static electricity is applied to the control terminals, the devices can be broken. Implement some countermeasures against static electricity. ‘itn FAH EAM MMSE, BF MMRT SRA AHVIET, MUIR LAE AM RE RMLTFAL. - . 2 avy Ih Fuji Electric Co.Ltd. g| MSeM 0713 59 Ea H04-004-03
Caution FR ‘ 1. Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design.. BLBRAGATUN RO MH CEREOR LIB THORS. LAL, ERAMRISRMEMREL EY ROTORS MHVET. SEEBNSE RAM RA OMMRCISAD eS RELTAD BR KKSICSSU RIMS SAR PHANG BER CSR KIICT RBH - LRM BH- AML RHCERSRROLOOFREMCTHREL, 2. The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. HAL CHO GAGS, SLERURE SALERRO ERAT SEO CH, ALHABIS FO CLHMAE. FO MAO RH MT BRE TSAO MBE TISLO CLBVELA. pe 3. The product described in this specification is not designed nor made for being applied to the ag ae z equipment or systems used under life-threatening situations. When you consider applying the 2 # Be) product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, _ i F g fe aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or a guilt systems, please apply after confirmation of this product to be satisfied about system construction Bit and required reliability. Aa : F ACLS ECM SHERRIE. AdIMD DDS LIAR PF CREN SMBS DUEL AT AIC BASS
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EEREE HIGBETSOLECMRO LE, CHITA). 5 2 Fuji Electric Co.Ltd. MS6M0713 22/22 ae Toi cot-03