6MBP15RH-060 FUJI
Document overview
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- PDF pages: 4
Technical content
6×15A Intelligent Power Module ( RH-Series ) nn Maximum Ratings and Characteristics
- Absolute Maximum Ratings ( T c =25°C ) Items Symbols Ratings Units Min. Max. DC Bus Voltage V DC 0 450 DC Bus Voltage (surge) V DC(Surge) 0 500 DC Bus Voltage (short o p erating) V SC 400 Collector-Emitter Voltage V CES 0 600 Inverter Continuous IC 15 Collector 1ms ICP 30 A Current Duty=44.1% -I C 15 Collector Power Dissipation One Transistor P C 40 W Voltage of Power Supply for Driver V CC -0.3 20 V Input Signal Current IIN 1 mA Alarm Signal Voltage V ALM 0 V CC V Alarm Signal Current IALM 15 mA Junction Temperature T J 150 Operating Temperature T OP -20 100 °C Storage Temperature T stg -40 125 Isolation Voltage A.C. 1min. V iso 2500 V Screw Torque Mounting (M4) 2.0 Nm
- Electrical Characteristics of Power Circuit ( at T j=25°C, V CC =15V ) Items Symbols Conditions Min. Typ. Max. Units Collector Current At Off Signal Input ICES V CE =600V, Input Terminal Open 1.0 mA Collector-Emitter Saturation Voltage V CE(Sat) IC =15A 2.7 V Forward Voltage of FWD V F -I C =15A 3.5 V
- Electrical Characteristics of Control Circuit ( at T j=25°C, V CC =15V ) Items Symbols Conditions Min. Typ. Max. Units Current of P-Line Side Driver (One Unit) ICCP fSW =0~15kHz, T C =-20~100°C 2.0 5.0 Current of N-Line Side Driver (Three Units) ICCN fSW =0~15kHz, T C =-20~100°C 4.0 10.0 On 1.00 1.35 1.70 Off 1.25 1.60 1.95 V Input Zener Voltage V Z R IN =20k Ω 8.0 IGBT Chips Over Heating Protec. Temp. Level T jOH Surface Of IGBT Chip 150 Hysteresis T jH 20 Inverter Collector Current Protection Level IOC N-Side, (N1-N2 open) 21 27 33 A Over Current Detecting Time tDOC T j=25°C 5.0 7.0 µs Alarm Signal Hold Time tALM 1.0 2.0 ms Over Current Detecting Resistance Value R OC 7.5 m Ω Under Voltage Protection Level V UV 11.0 12.5 Hysteresis V H 0.2 0.8
- Dynamic Characteristics ( at T C =T j=125°C, V CC =15V ) Items Symbols Conditions Min. Typ. Max. Units tON IC =15A, V DC =300V 0.5 Switching Time tOFF 3.5 µs tRR IF =15A, V DC =300V 0.5
- Thermal Characteristics Items Symbols Conditions Min. Typ. Max. Units R th (j-c) Inverter IGBT 3.1 Thermal Resistance R th (j-c) Diode 5.4 °C/W R th (c-f) With Thermal Compound 0.05 nn Outline Drawing V IN( th )Input Signal Threshold Voltage V mA V
6×15A nn Equivalent Circuit Drivers include following fun c tions À Over-current protection circuit Á Amplifier for driver  Under-voltage protection circuit à IGBT Chip overheating protection
6×15A nn Inverter 0 1 2 3 4 Collector Current vs. Collector-Emitter Voltage V CC =15V, T j=25°C Collector Current : I C [A] Collector-Emitter Voltage : V CE [V] 0 1 2 3 4 Collector Current vs. Collector-Emitter Voltage V CC =15V, T j=125°C Collector Current : I C [A] Collector-Emitter Voltage : V CE [V] 0 1 2 3 4 25°CT j=125°C Forward Voltage vs. Forward Current Forward Current : I F [A] Forward Voltage : V F [V] 10 -2 10 -1 10 0 10 -1 10 0 10 1 IGBT FWD Transient Thermal Resistance Thermal Resistance : R th(j-c) [°C/W] Pulse Width : P W [sec] 0 5 10 15 20 25 0,0 0,5 1,0 1,5 2,0 E rr E off E on Switching Loss vs. Collector Current V DC =300V, V CC =15V, T j=25°C Switching Loss : E on , E off , E rr [mJ/cycle] 0 5 10 15 20 25 0,0 0,5 1,0 1,5 2,0 E rr E off E on Switching Loss vs. Collector Current V DC =300V, V CC =15V, T j=125°C Switching Loss : E on , E off , E rr [mJ/cycle]
6×15A nn Outline Drawing Weight: 50g Specification is subject to change without notice January 99