6MBP150VEA120-50 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 8

Technical content

Features

  • Temperature protection provided by directly detecting the junction temperature of the IGBTs
  • Low power loss and soft switching
  • High performance and high reliability IGBT with overheating protection
  • Higher reliability because of a big decrease in number of parts in built-in control circuit

IGBT Modules6MBP150VEA120-50 http://www.fujielectric.com/products/semiconductor/ Electrical Characteristics (T j=25°C, VCC=15V unless otherwise specified) Items Symbol Conditions Min. Typ. Max. Units Inverter Collector Current at off signal input ICES VCE=1200V - - 1.0 mA Collector-Emitter saturation voltage (*10) VCE(sat) IC=150A Terminal - - 2.20 V Chip - 1.70 - V Forward voltage of FWD (*10) VF IF=150A Terminal - - 2.70 V Chip - 2.10 - V Brake Collector Current at off signal input ICES - - - - mA Collector-Emitter saturation voltage (*10) VCE(sat) - - - - V - - - V Forward voltage of FWD (*10) VF - - - - V - - - V Switching time ton VDC=600V, Tj=125°C, IC=150A 1.1 - - µs toff - - 2.1 µs trr VDC=600V, IF=150A - - 0.3 µs Supply current of P-side pre-driver (per one unit) Iccp Switching Frequency= 0-15kHz TC=-20~110°C - - 35 mA Supply current of N-side pre-driver Iccn - - 105 mA Input signal threshold voltage Vinth(on) Vin-GND ON 1.2 1.4 1.6 V Vinth(off) OFF 1.5 1.7 1.9 V Over Current Protection Level Inverter I OC Tj=125°C 225 - - A Brake - - - A Over Current Protection Delay time tdOC Tj=125°C - 5 - µs Short Circuit Protection Delay time tSC Tj=125°C - 2 3 µs IGBT Chips Over Heating Protection Temperature Level TjOH Surface of IGBT Chips 150 - - °C Over Heating Protection Hysteresis TjH - 20 - °C Under Voltage Protection Level VUV 11.0 - 12.5 V Under Voltage Protection Hysteresis VH 0.2 0.5 - V Alarm Signal Hold Time tALM(OC) ALM-GND T C=-20~110°C 1.0 2.0 2.4 ms tALM(UV) VCC 10V 2.5 4.0 4.9 ms tALM(TjOH) 5.0 8.0 11.0 ms Resistance for current limit RALM 960 1265 1570 Ω Note *10: The Max value is a case where it measures from P2-(U,V,W,B) , (U,V,W,B)-N2. Thermal Characteristics (T C = 25ºC) Items Symbol Min. Typ. Max. Units Junction to Case Thermal Resistance (*11) Inverter IGBT Rth(j-c)Q - - 0.160 °C/W FWD Rth(j-c)D - - 0.235 °C/W Brake IGBT Rth(j-c)Q - - - °C/W FWD Rth(j-c)D - - - °C/W Case to Fin Thermal Resistance with Compound Rth(c-f) - 0.05 - °C/W Note *11: For 1device, the measurement point of the case is just under the chip. Noise Immunity (V DC=600V, VCC=15V) Items Conditions Min. Typ. Max. Units Common mode rectangular noise Pulse width 1μs, polarity ±10 min. Judge : no over-current, no miss operating ±2.0 - - kV Recommended Operating Conditions Items Symbol Min. Typ. Max. Units DC Bus Voltage VDC - - 800 V Power Supply Voltage of Pre-Driver VCC 13.5 15.0 16.5 V Switching frequency of IPM fSW - - 20 kHz Arm shoot through blocking time for IPM's input signal tdead 1.0 - - µs Screw Torque (M5) - 2.5 - 3.5 Nm Weight Items Symbol Min. Typ. Max. Units Weight Wt - 980 - g

http://www.fujielectric.com/products/semiconductor/ Block Diagram Pre-drivers include following functions 1. Amplifier for driver 2. Short circuit protection 3. Under voltage lockout circuit 4. Over current protection 5. IGBT chip over heating protection VCC ⑭ VinX ⑯ GND ⑬ VinY ⑰ VinZ ⑱ ALM ⑲ VCCV ⑦ GNDV ⑤ VCCU ③ GNDU ① VinU ② VinV ⑥ VCCW ⑪ GNDW ⑨ VinW ⑩ ALMU ④ ALM V ⑧ ALM W ⑫ Pre-Driver Pre-Driver Pre-Driver Pre-Driver Pre-Driver Pre-Driver RALM RALM RALM RALM U V W B

IGBT Modules6MBP150VEA120-50 http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 12 13 14 15 16 17 18 Vinth(on) Vinth(off) TC=25~125°C 12 13 14 15 16 17 18 tALM(TjOH) tALM(OC) 0 20 40 60 80 100 120 140 0.2 0.4 0.6 0.8 0 20 40 60 80 100 120 140 100 150 200 0 5 10 15 20 25 VCC=17V VCC=15V VCC=13V Low-side High-side VCC=17V VCC=15V VCC=13V 100 150 200 12 13 14 15 16 17 18 TjOH TjH Input signal threshold voltage vs. Power supply voltage (typ.) Power supply voltage : VCC [ V ] Input signal threshold voltage : Vinth(on),Vinth(off) [ V ] Alarm hold time vs. Power supply voltage (typ.) Power supply voltage : VCC [ V ] Alarm hold time : tALM [ msec ] Under voltage vs. Junction temperature (typ.) Junction temperature : Tj [ °C ] Under voltage : VUV [ V ] Under voltage hysterisis vs. Junction temperature (typ.) Junction temperature : Tj [ °C ] Under voltage hysterisis : VH [ V ] Power supply current vs. Switching frequency Tj= 25°C(typ.) Switchig frequency : fsw [ kHz ] Power supply current : ICC [ mA ] Over heating characteristics TjOH,TjH vs. VCC (typ.) Power supply voltage : VCC [ V ] Over heating protection : TjOH [°C] OH hysterisis : TjH [°C]

http://www.fujielectric.com/products/semiconductor/ 100 150 200 250 300 Tj=25°C Tj=125°C 100 150 200 250 300 Tj=25°C Tj=125°C 100 150 200 250 300 VCC=17V VCC=15V VCC=13V 100 150 200 250 300 VCC=17V VCC=13V VCC=15V 100 150 200 250 300 VCC=17V VCC=13V VCC=15V 100 150 200 250 300 VCC=13V VCC=15V VCC=17V Forward current vs. Forward voltage [Terminal] (typ.) Forward voltage : VF [ V ] Forward current : IF [ A ] Forward current vs. Forward voltage [Chip] (typ.) Forward voltage : VF [ V ] Forward current : IF [ A ] Collector current vs. Collector-Emitter voltage Tj=125°C[Terminal] (typ.) Collector-Emitter voltage : VCE [ V ] Collector current : IC [ A ] Collector current vs. Collector-Emitter voltage Tj=125°C[Chip] (typ.) Collector-Emitter voltage : VCE [ V ] Collector current : IC [ A ] Collector current vs. Collector-Emitter voltage Tj=25°C[Terminal] (typ.) Collector-Emitter voltage : VCE [ V ] Collector current : IC [ A ] Collector current vs. Collector-Emitter voltage Tj=25°C[Chip] (typ.) Collector-Emitter voltage : VCE [ V ] Collector current : IC [ A ] Inverter

IGBT Modules6MBP150VEA120-50 http://www.fujielectric.com/products/semiconductor/ 100 200 300 400 500 600 0 50 100 150 200 400 600 800 1000 0 50 100 150 0.01 0.1 0.001 0.01 0.1 1 10 IGBT FWD 100 200 300 400 500 600 0 200 400 600 800 1000 1200 1400 RBSOA (Repetitive pulse) 0 50 100 150 200 250 300 Eon Eoff Err 0 50 100 150 200 250 300 Eon Eoff Err Power derating for FWD (max.) [per device] Case Temperature : TC [ °C ] Collector Power Dissipation : PC [ W ] Collector Power Dissipation : PC [ W ] Transient thermal resistance (max.) Pulse width : PW [ sec ] Thermal resistance : Rth(j-c) [ °C/W ] Collector current : IC [ A ] Power derating for IGBT (max.) [per device] Case Temperature : TC [ °C ] Reversed biased safe operating area VCC=15V,Tj≦125°C[Main Terminal] (min.) Collector-Emitter voltage : VCE [ V ] Switching Loss vs. Collector Current (typ.) VDC=600V,VCC=15V,Tj=25°C Collector current : IC [ A ] Switching loss : Eon,Eoff,Err [mJ/cycle] Switching Loss vs. Collector Current (typ.) VDC=600V,VCC=15V,Tj=125°C Collector current : IC [ A ] Switching loss : Eon,Eoff,Err [mJ/cycle]

http://www.fujielectric.com/products/semiconductor/ 200 400 600 800 1000 0 20 40 60 80 100 120 140 100 1000 0 50 100 150 200 250 300 trr Tj=125°C Irr Tj=125°C Irr Tj=25°C trr Tj=25°C 100 1000 10000 0 50 100 150 200 250 300 ton toff tf 100 1000 10000 0 50 100 150 200 250 300 ton toff tf Over current protection vs. Junction temperature (typ.) VCC=15V Junction temperature : Tj [ °C ] Over current protection level : IOC [ A ] Reverse recovery characteristics (typ.) trr,Irr vs. If Forward current : IF [ A ] Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Switching time vs. Collector current (typ.) VDC=600V,VCC=15V,Tj=25°C Collector current : IC [ A ] Switching time : ton,toff,tf [ nsec ] Switching time vs. Collector current (typ.) VDC=600V,VCC=15V,Tj=125°C Collector current : IC [ A ] Switching time : ton,toff,tf [ nsec ] Outline Drawings, mm

IGBT Modules6MBP150VEA120-50 http://www.fujielectric.com/products/semiconductor/ WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2012. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
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