6MBP100VDA120-50 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 8

Technical content

Features

  • Temperature protection provided by directly detecting the junction temperature of the IGBTs
  • Low power loss and soft switching
  • High performance and high reliability IGBT with overheating protection
  • Higher reliability because of a big decrease in number of parts in built-in control circuit

IGBT Modules6MBP100VDA120-50 http://www.fujielectric.com/products/semiconductor/ Electrical Characteristics (T j=25ºC, VCC=15V unless otherwise specified) Items Symbol Conditions Min. Typ. Max. Units Inverter Collector Current at off signal input ICES VCE=1200V - - 1.0 mA Collector-Emitter saturation voltage VCE(sat) IC=100A Terminal - - 2.40 V Chip - 1.70 - V Forward voltage of FWD VF IF=100A Terminal - - 2.70 V Chip - 2.10 - V Brake Collector Current at off signal input ICES - - - - mA Collector-Emitter saturation voltage VCE(sat) - - - - V - - - V Forward voltage of FWD VF - - - - V - - - V Switching time ton VDC=600V, Tj=125ºC, IC=100A 1.1 - - µs toff - - 2.1 µs trr VDC=600V, IC=100A - - 0.3 µs Supply current of P-side pre-driver (per one unit) Iccp Switching Frequency= 0-15kHz TC=-20~110ºC - - 21 mA Supply current of N-side pre-driver Iccn - - 69 mA Input signal threshold voltage Vinth(on) Vin-GND ON 1.2 1.4 1.6 V Vinth(off) OFF 1.5 1.7 1.9 V Over Current Protection Level Inverter I OC Tj=125ºC 150 - - A Brake - - - A Over Current Protection Delay time tdOC Tj=125ºC - 5 - µs Short Circuit Protection Delay time tSC Tj=125ºC - 2 3 µs IGBT Chips Over Heating Protection Temperature Level TjOH Surface of IGBT Chips 150 - - ºC Over Heating Protection Hysteresis TjH - 20 - ºC Under Voltage Protection Level VUV 11.0 - 12.5 V Under Voltage Protection Hysteresis VH 0.2 0.5 - V Alarm Signal Hold Time tALM(OC) ALM-GND T C=-20~110ºC 1.0 2.0 2.4 ms tALM(UV) VCC 10V 2.5 4.0 4.9 ms tALM(TjOH) 5.0 8.0 11.0 ms Resistance for current limit RALM 960 1265 1570 Ω Thermal Characteristics (T C = 25ºC) Items Symbol Min. Typ. Max. Units Junction to Case Thermal Resistance (*10) Inverter IGBT Rth(j-c)Q - - 0.30 °C/W FWD Rth(j-c)D - - 0.52 °C/W Brake IGBT Rth(j-c)Q - - - °C/W FWD Rth(j-c)D - - - °C/W Case to Fin Thermal Resistance with Compound Rth(c-f) - 0.05 - °C/W Note *10: For 1device, the measurement point of the case is just under the chip. Noise Immunity (V DC=600V, VCC=15V) Items Conditions Min. Typ. Max. Units Common mode rectangular noise Pulse width 1μs, polarity ±, 10 min. Judge : no over-current, no miss operating ±2.0 - - kV Recommended Operating Conditions Items Symbol Min. Typ. Max. Units DC Bus Voltage VDC - - 800 V Power Supply Voltage of Pre-Driver VCC 13.5 15.0 16.5 V Switching frequency of IPM fSW - - 20 kHz Arm shoot through blocking time for IPM's input signal tdead 1.0 - - µs Screw Torque (M4) - 1.3 - 1.7 Nm

http://www.fujielectric.com/products/semiconductor/ Block Diagram Pre-drivers include following functions 1. Amplifier for driver 2. Short circuit protection 3. Under voltage lockout circuit 4. Over current protection 5. IGBT chip over heating protection Vcc ⑭ VinX ⑯ GND ⑬ VinY ⑰ VinZ ⑱ ALM ⑲ VccV ⑧ GNDV ⑤ VccU ④ GNDU ① VinU ③ VinV ⑦ VccW ⑫ GNDW ⑨ VinW ⑪ ALMU ② ALM V ⑥ ALM W ⑩ Pre-Driver Pre-Driver Pre-Driver Pre-Driver Pre-Driver Pre-Driver RALM RALM RALM RALM U V W P N

IGBT Modules6MBP100VDA120-50 http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Power supply current vs. Switching frequency Tj= 25℃(typ.) 0 5 10 15 20 25 Switchig frequency ： fSW [ kHz ] Power supply current : ICC [ mA ] VCC=17V VCC=15V VCC=13V VCC=17V VCC=15V VCC=13V N-side P-side Input signal threshold voltage vs. Power supply voltage (typ.) 0.5 1.5 2.5 12 13 14 15 16 17 18 Power supply voltage ： VCC [ V ] Vinth(on) Vinth(off) TC=25～125℃ Under voltage vs. Junction temperature (typ.) 0 20 40 60 80 100 120 140 Junction temperature ： Tj [ ℃ ] Under voltage : VUV [ V ] Under voltage hysterisis vs. Junction temperature (typ.) 0.2 0.4 0.6 0.8 0 20 40 60 80 100 120 140 Junction temperature ： Tj [ ℃ ] Under voltage hysterisis : VH [ V ] Alarm hold time vs. Power supply voltage (typ.) 12 13 14 15 16 17 18 Power supply voltage ： V CC [ V ] Alarm hold time : tALM [ msec ] tALM(TjOH) tALM(OC) Over heating characteristics TjOH,TjH vs. VCC (typ.) 100 150 200 12 13 14 15 16 17 18 Power supply voltage ： VCC [ V ] Input signal threshold voltage : Vinth(on),Vinth(off) [ V ] Over heating protection : TjOH [℃] OH hysterisis : TjH [℃] TjOH TjH

http://www.fujielectric.com/products/semiconductor/ Collector current vs. Collector-Emitter voltage Tj=25℃[Chip] (typ.) 100 120 140 160 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage ： VCE [ V ] Collector current : IC [ A ] VCC=13V VCC=15V VCC=17V Collector current vs. Collector-Emitter voltage Tj=25℃[Terminal] (typ.) 100 120 140 160 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage ： VCE [ V ] Collector current : IC [ A ] VCC=13V VCC=15V VCC=17V Collector current vs. Collector-Emitter voltage Tj=125℃[Chip] (typ.) 100 120 140 160 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage ： VCE [ V ] Collector current : IC [ A ] VCC=13V VCC=15V VCC=17V Collector current vs. Collector-Emitter voltage Tj=125℃[Terminal] (typ.) 100 120 140 160 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage ： VCE [ V ] Collector current : IC [ A ] VCC=13V VCC=15V VCC=17V Forward current vs. Forward voltage [Chip] (typ.) 100 120 140 160 0 0.5 1 1.5 2 2.5 3 3.5 Forward voltage ： VF [ V ] Forward current : IF [ A ] Tj=25℃ Tj=125℃ Forward current vs. Forward voltage [Terminal] (typ.) 100 120 140 160 0 0.5 1 1.5 2 2.5 3 3.5 Forward voltage ： VF [ V ] Forward current : IF [ A ] Tj=25℃ Tj=125℃ Inverter

IGBT Modules6MBP100VDA120-50 http://www.fujielectric.com/products/semiconductor/ Switching Loss vs. Collector Current (typ.) VDC=600V,VCC=15V,Tj=25℃ 0 20 40 60 80 100 120 140 160 Collector current ： IC [ A ] Switching loss ：Eon,Eoff,Err [mJ/cycle] Eon Eoff Eｒｒ Reversed biased safe operating area VCC=15V,Tj≦125℃[Main Terminal] (min.) 100 150 200 250 300 350 400 0 300 600 900 1200 1500 Collector-Emitter voltage ： VCE [ V ] Collector current : IC [ A ] RBSOA (Repetitive pulse) Transient thermal resistance (max.) 0.01 0.1 0.001 0.01 0.1 1 10 Pulse width ： PW [ sec ] Thermal resistance : Rth(j-c) [ ℃/W ] IGBT FWD Power derating for IGBT (max.) [per device] 100 200 300 400 500 0 50 100 150 Case Temperature ： TC [ ℃ ] Collector Power Dissipation : PC [ W ] Switching Loss vs. Collector Current (typ.) VDC=600V,VCC=15V,Tj=125℃ 0 20 40 60 80 100 120 140 160 Collector current ： I C [ A ] Switching loss ：Eon,Eoff,Err [mJ/cycle] Eon Eoff Eｒｒ Power derating for FWD (max.) [per device] 100 200 300 400 500 0 50 100 150 Case Temperature ： TC [ ℃ ] Collector Power Dissipation : PC [ W ]

http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) VDC=600V,VCC=15V,Tj=25℃ 100 1000 10000 0 20 40 60 80 100 120 140 160 Collector current ： IC [ A ] Switching time : ton,toff,tf [ nsec ] ton toff tf Switching time vs. Collector current (typ.) VDC=600V,VCC=15V,Tj=125℃ 100 1000 10000 0 20 40 60 80 100 120 140 160 Collector current ： IC [ A ] Switching time : ton,toff,tf [ nsec ] ton toff tf Reverse recovery characteristics (typ.) trr,Irr vs. If 100 1000 0 20 40 60 80 100 120 140 160 Forward current ： IF [ A ] Reverse recovery current :Irr [ A ] Reverse recovery time : trr [ nsec ] trr Tj=125℃ Irr Tj=125℃ Irr Tj=25℃ trr Tj=25℃ Over current protection vs. Junction temperature (typ.) VCC=15V 100 150 200 250 300 350 400 0 20 40 60 80 100 120 140 Junction temperature ： Tj [ ℃ ] Over current protection level : IOC [ A ] Outline Drawings, mm

IGBT Modules6MBP100VDA120-50 http://www.fujielectric.com/products/semiconductor/ WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
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