6MBP100RA060

6MBP100RA060 FUJI

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| GBT | PM R eries MUU ET PUNE HUE Vaunayy seri 6MBP100RA060 His & Features + BRACYI KAT YFLI ite | + IPMN UY —XEBREDN HSN TY ae | + IGBTF y POT} RUB MRM RAE LC £ S BRIERE K ¢ SSO RR Ae | + ARB IEE O BR RAO AMBIIC & SERIE eo a e Le | + Low power loss and soft switching EN Sf fal + Compatible with existing IPM-N series packages = Ls) | + High performance and high reliability |GBT with overheating protection a BE — + Higher reliability because of a big decrease in number of parts in an built-in control circuit Wit Ct §=Maximum ratings and characteristics @ €HHALH Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item | Symbol Rating | Unit [Min [ Max. | T eae [voc [| of 450 IV rae BRR (-T) Vv | O flewnaepreapl BABE (551805) Vv eS SIZ ZEESSEL 1a [Vces {| 0 [600 [Vv 10 )] 2473@% [oc fie T= 00 A = N [ims ftcp | = 200 TA @e v | Duty=59.5% [ic | = | 100 A I Bv7sme IRF [Po |= 00 Ww Olle Ronee ee ee St v v | MOTHS [vec #1 [| 0 [2 |v lor tor for ona APSE [Vin “#2 [ove Iv (i ey ter or 2aeR a a CT) 75— LEAARE [van =a 0 [Vee [Vv 5 ~ AEA PS - LEDER [am #4 | — | 15 | mA Fig.1 Measurement of case temperature Rea c Bris 7—2BE Fig SH c BRE (7—2eTm) Visco *5 | — | AC25 | kV RBDATE IL-7 Screw torque [BAtBB Mounting (M5) | — | 3.5 | Nem =MFHBTerminal(M5)[ — [35 [Nem Note: P.3 7Oy 7H Refer to block diagram, page 3. 3 Vaud. 6-10 MEM GEL TF AL 2 Apply Vin between terminal No. 2 and i, § and 4. 8 and 7 #4 Wit, GMFLVANLTRAW, G& band 5 SOHZ/60H2 ERR 15M %* 3. Apply Vaum between terminal No. 16 and 10 * 4 Apply lau to terminal No. 6 * 5 SOHZ/60Hz sine wave 1 minute, @ SAH //NT—B Electrical characteristics of power circuit (at Tc=Tj=25'°C , Vec=15V) Item Unit IED 7eEseri its [ices | Vee=soov, | = T= 0 mA N [BU7S- 53 y 5 mMBFORE [ veewey [icst00A_ 28 VY v | 44 — FRE [ve | = tc=t00q [30 |v A-522

6MBP100RA060 = + IGBT-IPM ttt a @ BAH / HAH Electrical characteristics of control circuit (at Tc=Tj=25°C, Vec=15V) Tem Unit P BIER Haw He (1 BR) [icce | tow=0~15kHzx To=-20~100] 3 [= [8 | ma N ABUL 8 7H BS it leon tsw=0~ 15kHz* } 10 65 mA (3 Ses) To=-20~100°C ADL SBE 170; V [Vinore) [OFF T2560 | 1.98 | Ya t—-@E [vz [Rinezoeo | = to | BARE RE Toor Voc=0V, Ic=0A 110 125 «| C Case temperature EXFYYR CO IGBT F y 7M RHR FB | Ton | surface of GBT chins [t50_ | = = EAF ISA A BERRA IER Tj=125C Collectorcurrent | 150 | — | — [A BERRA Fig? FH [tooo [Tease ts MOSASEETRMMTRE a EFDA SN OT 75 —LHARBE a =| ms aRRRE AE Fg BR a PILE [Rau t4as [1500 1575 9 * Switching frequency of IPM @ 4448 » 7%tt Dynamic characteristics (at Tc=Tj=125'C, Vec=15V) Item | Symbol_[ Condition Min. Typ. [ Max. | Unit A4 7 F > FHP (IGBT) Fig.4 SF2 [ton | Ic=100A, Voc=300V [os | - | — lus [ = [=] 36 [us RID FST WO) [ve [e100 Voo=s0ov | = = 1460 [ns ; te «| Pia | epee ! > Fig.3 #28(R3E3H 1855) (tsc) OHH Definition of tsc BR REE nish (tdoc) OER Fig.2 Definition of OC delay time INPUT Signal cotector Curent ey? // | i wail boton: Ltoff - name — At y Fv FPS (ton, toff) DER Fig.4 Definition of switching time @ Ht Thermal characteristics (Tc=25°C) Item [Symbol Typ. Max. Unit BE 7 — ARR INV [iget [AthG-e) = ost ew [ewo [Athi = 0.70 cw PERE PET EPRI TA) [atm (ey 008 = ew @ #32(8 Recommendable value ltem | Symbol [ Min. [Typ Max] Unit 5585 [ve [20 = 400 Tv uweeeE v TESBESEL ET [sw ft = 20 re HBOATT bIL7 Screw torque | BUFEB Mounting (M5) [= | 25 T= TOON EHF Terminal (us) | — | 28) = [30 [Nem A-523

= + IGBT-IPM 6MBP100RA060 @7O-,7BH Block diagram vecu > OF i nou @ ¥ ou Vecv (6) vinv © QF Veow oF A now) | AL ow vec @) =e aes | K GND (0 TTT viny @ = X 4 SIGUE (SF ACOMAE EAE onl 2 sO =. 3 MERTEET RM t— K4 a . vez & hed . 2 PERRO wa, 3 IGBT Fy 7aseeaeiRs NC*OB Pre-drivers include following functions @enc 1. Short circuit protection circuit ——ol 2 Amplifier for driver

3 Undervoltage protection circuit

am © @ Overcurrent protection circuit vse S IGBT Chip overheating protection Stith (tA) Characteristics (Representative) @ #1@88 Control circuit Hi Vee ¥7V. a. eS SAAS ge EEE EE oe ge 8 5 o

2 ZA gS

8 vol —— é Be Aas, a ors baal i i BS ae ees ee Pp} +} 44 i) Ss 10 1S 20 2s %2 13 14 1s 16 7 18 Switching frequency fsw (kHz) Power supply voltage Vcc (V) BRBR—AT y FL TRB ANAL a MESE-BRBE SH Power supply current vs. Switching frequency Input signal threshold voltage vs. Power supply voltage A-524

6MBP100RA060 = + IGBT-IPM —_—— @ #938 Control circuit “ H i H i , EEEEEEEEEEFS| «= FEE PEER SEEEEE St Ey 2 : JESEERSEEEGE Sy 9 34 - 5 g Xo 40 60 80 100 120 140 30 40 60 80 100 120 140 Junction temperature Tj (‘C) Junction temperature Tj (‘C) SMERELET REL SIS BER BERTREE ATUL A-HSMBEBE Undervoltage vs. Junction temperature Undervoltage hysterisis vs. Junction temperature

3 GS 200 7

sue ee EEE] oO LEE Fast oF PCOCop oe} ef = gz By Sz 2 ao a 2 92 13 14 15 16 17 18 ° 12 13 14 15 16 17 18 Power supply voltage Vcc (V) Power supply voltage Vcc (V) PIL ese — BREE BAREH(AR—SRSESH Alarm hold time vs. Power supply voltage Overheating characteristics Tcou, Tiol.ToH. TiH vs. Vec @4>N-—3B Inverter 200 . Teese 200 mse . ort ++ 1sv

2 P Ved j < KE :

5109] : + Va + 5100 YW Vl 2 3 50 : J+ 3 50 VA ° H oo % 1 2 3 4 °9 1 2 3 4 Collector-Emitter voltage Vce (V) Collector-Emitter voltage Vce (V) - AU ISBR-ALIS- Li y SBE ALISER-ALIZ+- Ii y SBE Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage A-525

= + IGBT-IPM 6MBP100RA060 —_— eS @ 4-3 Inverter Edc=300V,Vec=15V,T}=2ST Ede=300V,Vec=15V,Tj=125T ey a g P 5 =o Soe 3 = ay 5 5 SESS SSS5 “SSS soSs= o 20. 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Collector current Ic (A) Collector current Ic (A) At y FL FBI L 7 2 BRE Af y FFM —AL 7 2 BRS Switching time vs. Collector current Switching time vs. Collector current 200; =o | Pt erhase 33 | rec 100 < 150 ; - St ze sangeet == Shs =f : s Hi j Lo aiseee reves enerennenntfersoverenrsfecenrssveredfeneeereseedesensnesoselferooeges oe cree meee —— Seé i t iri2se a i i 33 | | ir 2s g i i HH APES USS == ° 1 2 3 4 0 20. 40 60 680 100 120 140 160 Forward voltage VF (V) Forward current IF (A) Bm BEE StH HOE SEM wmete Forward current vs. Forward voltage Reverse recovery characteristics trr. Irr vs. IF Vec=1SV,TiS 125°C = eg SE ] 2 i 900 g eee eee es ee Joop. [| | | \\ | { a cele 3 ee ee 5 400 a A Fa organ fn 3 300 SS é loot 0.01 07 1 °9 yoo 200300400 500600700 Pulse width Pw (sec) Collector-Emitter voltage Vce (V) am BINT PARSE ERS Transient thermal resistance Reverse biased sate operating area A-526

6MBP100RA060 = + IGBT-IPM eg @ 4-4 inverter or device) 500 — 200 - — - a“ sitchen & 150 + : i i t go fiijiummimonssekouonhompo 100 —— it 1 ef ot i Co 4 i Co) 20 40 60 80 100 «120 140 «160 ° 20 40 60 80 100 4120 «4140 «(160 Case temperature Tc (C) Case temperature Tc (C) IGBT BHM (1 Fy 7) FWD @A1Biasstt (1 Fy 7) Power derating for IGBT (per device) Power derating for FWD (per device) = Ede=300V,Vec=1SV,Tj=25T > 2 1s 2 1s, a on ro = ma < < a aia ot a | a Fe | Ser =| | z an a a nee ee ee Se 2 jase G °0 2 4060-80100 120140160 & “0 20 40 60 80 100 120 140 160 Collector current Ic (A) Collector current Ic (A) AA YF LTBR—AL I BBR At vy FL TBR—IALI SS RatE Switching loss vs. Collector current Switching loss vs. Collector current

280 Vec=15V

9 240) = 80 6 ecko bebe 6 joo a] ° 20 40 60 80 100 120 140 Junction temperature Tj (‘C) BERRE IS BASH Overcurrent protection vs. Junction temperature A-527

Wi StAti& Outline drawings, mm | ie T 7 T 17 Te = + #1 Su | | " yy {ot { W v u eOh tt | BB Mass: 440g A528