6MBP100NA060-01 FUJI
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Technical content
Device Name : IGBT-IPM Type Name : 6MBP100NA060-01 aa Spec. No. : MS6M0277 Fuji Electric Co.,Ltd. Matsumoto Factory ae ee eee Fuji Electric Co.,Ltd. en a 2 EMS6M0277 insEH a H04-004-07
1 Issued | . Har, -2'7-'gf | enactment date Peres 7 050 Fuji Electric Co.,Ltd. IMS6M0277 nse H04-004-06
“11. Outline Drwing WE Unit :mm Sif mm 10941 13.840. 67.4 227% 322403 | 508 1016 504 10% 508 0K 524 e 25 Sinica fa. | : a] i+ te\\ fel Te Tel th ne 6-M5 0064 oe Eeaes N a} (| weal enous 0 _ ~~ ruteeorceo.tia _‘[flusemo277_ansl H04-004-03
© | 2. Block Diagram 7oy7e VecU @ OP vind @ =) “ KL cNDU @ — Oy VecV © wv 4 we EE GNDV @ 3 Ov VecW © VinW @ Pre-Driver Vve'Z\\ cow @ 2a 5 w Vec TS A SEES Vinx ® Pre-Driver
22585 VinY @ [| Pre-Driver S
Pees VinZ ® [—| Pre-Driver K — OB NC ® C_] ON la Temperature sensor Raum Over heating protec- “A ALM @ rl tion circuit Co] Pre-Drivers include following functions @ Short Circuit Protection Circuit @ Amplifier for Driver @Under Voltage Lockout Circuit @ Over current Protection Circuit Fuji Electric Co,Ltd. |sIMS6MO277 ansEE H04-004-03
- Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Units (Min. [Max. | DC Bus Voltage [we [0 [4so[ v | DC Bus Voltage (surge) [ vocsunse) [0 [soo | v_| DC Bus Voltage (short operating) Collector-Emitter Voltage [ves [0 | 600] v | [oc te | — too | a | N|Collector Current [ims [ep | — | 200 | A _| v Duty=42.0% [ic |— | 100] A _| Collector Power Dissipation One Transistor | pc | — | 400] w | [Junction Temperature | STS 150 | | Input Voltage of Power Supply for Pre-Driver [vec x1] 0 | 20 | v | input Signal Voltage [vin x2[o | vz | v | input Signal Current [in [— J a [ma | Alarm Signal Voltage [Van x3] 0 | vec] v | Alarm Signal Current Liaw 4 [| — [1s | ma | Storage Temperature 2323 | [Operating Case Temperature (Fig.1) [tor | -20 | 100] | go33 Isolation Voltage (Case-Terminal) [ viso «5 | — | AC2.5 288 oo Note 31 Vcc shall be applied to the input Voltage between terminal No. 3 and1, e528 6 and 4, 9 and 7, 11 and 10. seeee 3% 2. Vin shall be applied to the input Voltage between terminal No. 2 and 1, ee2ee 5 and 4, 8 and7, 12 131415 and 10. eesie 3% 3. Va shall be applied to the Voltage between terminal No. 16 and 10. erect 3% 4 lato shall be applied to the input current to terminal No. 16. eects 3 5 5OHz/60Hz sine wave 1 minute. at Te curse - #sE8e 4 Ease: f [ore eee (0) iG) . | bet | | | i} (0) fei_fsi_ fale) Fig.1 Measurement of case temperature Ee Fuji Electric Co.,Ltd. MS6M0277 = snsEt4 H04-004-03
- Electrical Characteristics
4.1 Electrical Characteristics of Power Circuit (at Tc=Tj=25°C,Vec=15V)
| | _at off Signal Input Veer. ere | V | Saturation Voltage [Forward Voltage of FWO | ve [te=100A_ | — | —] 3.3 | Vv |
4.2 Electrical Characteristics of Control Circuit (at Tc=Tj=25°C,Vcc=15V)
Power Supply Current of P-Line al ee ee Side Pre-Driver (One Unit) Duty=50% — 18 mA Power Supply Current of N-Line fsw=15kHz Side Three Pre-Drivers and Iccn |Duty=50% 24 54 mA Protection Circuits Inox sone Tiresod tage nfo. fou __froo tissue | : e5 28 Level Case Temperature id ize Protection(OC) Level | INV Collector Current i Fs 3 5 || Level wee | Protection (Fig.3) [Limiting Resistor for Alarm [ram | —————*4 1425 [iso0[iszs] ao | 3&6 Switching frequency of IPM
4.3 Dynamic Characteristics (at Tc=Tj=125,Vcc=1 5V)
[sittems | Symbols [Conditions| in. | Typ. [ Max. [units | map Pari ett Fig.4 Voc=300V [= [=] 3.6 | us | Fuji Electric Co.,Ltd. AY S6M0277_ ens rr H04-004-03
ALM ' ‘ tove ! <—™ Fig.2 : Definition of OC Delay Time ‘ tsc : sESi le le Fo =£535| Alarm disable Alarm disable — Alarm enable ERE: Hf Fig.3 : Definition of tsc atts INPUT Signal Collector Current (Ic) ! : : ‘ 10% Fig.4 : Definition of switching time a Fuji Electric Co.,Ltd. AL S6MO0277 7msER H04-004-03
- Thermal Characteristics (Tc=25°C) [tems | Symbols | Min. | Typ. | Max. | units | eee —_[ leet eet Thermal Resistance [Fw [rth(-c) | — | — | 0.90 | c/w | [Case to Fin Thermal Resistance with Compound _[rth(c-f) | — | 0.05 | — [c/w } 6.Mechanical Characteristics [tems Min. typ. T Max. | units | Sere Torae owimaey {ff sf 7.Recommendable Value [tems [Symbois[ Conditions| Min. [ Typ. | Max. | Units | [DCBusvotage |e “| SC 200 | — J a0] v pete Range of Pre-Driver aa Fuji Electric Co.,Ltd. MS6M0277 as 4 H04-004-03
- Packing and labeling BOACRR Label material card board weight 5.5 kg (Max.) | products 10pcs (Max.) wo Ke} aS) 260 typename Lot.No. IPMP6OT) Se g| Fae Cg es I " + AS the number pe a eae ol | | ~ wo Pay 247 eg g a. 9. Storage and transportation notes (R#. BR + OF EBIA) eee 2s - The IGBT-IPM should be stored at a standard temperature of 5 to 35 °C and humidity of eEBee 45 to 75%. 2258 BBRAOBELL, (5~35C. 45~75%) 2ee rc + Store modules in a place with few temperature changes in order to avoid condensation Hata on the module surface. geeee SRCRRBMORMECL, (EYa—-WROMERLENEL) B33 58 + Avoid exposure to corrosive gases and dust. Feese BREHAORABM, BROS MBMILHIISTE. zs é : - Avoid excessive extermal force on the module. Epbe2 HACMEMPD SANK IICTRICERBTSCE, - Store modules with unprocessed terminals. EVa—MWOWFSAMIORUECRET SCE. - Do not drop or otherwise shock the modules when transporting. RROBRRICGRESALCU, BPEthRyLAWcCe. 10. Applicable category (Ja FA St BH) This specification is applied to IGBT-IPM named 6MBP100NA060-01. AMAHB(S. IGBT-IPM 6MBP1OONA060-01 [CAT S. EA Fuji Electric Co.,Ltd. se M0277) snsEq H04-004-03
- Characteristic (Representative) ssttn—7 (KR) 11-1.Control Circuit ‘eGR Power supply current vs. Switching frequency Input signal threshold voltage — pers Te=100T vs. Power supply voltage oo Tye 25 0. ———— OT 25 - £2 ‘Veen Bo 2 sf 4 | | | | = il | ao 7 ~ to Fs meena tes" | Veen 3V 3 os | a 0 - - : 0 i 0 5 10 Ss 20 25 12 13, 14 1S 16 7 18 Switching frequency : fsw(kHz) power supply voltage : Vec (V) eEes Under voltage vs. Junction temperature Under voltage hysterisis vs. Junction temperature 2ats Boss “ 7 1 ’ Seee if s 4 I agees ee & e3285| 5°) = og ge55 = fT > essee| 3 | g | Sgf2s] & | i 2 { esse] § 4. 3 + i | efees| 5 - S02 i - i 3o88 0! - 0. . $e Bag 20 40 60 80 100 120 140 20 40 60 80 100 120 140 =8e gE Junction temperature : Tj (%C) Junction temperature : Tj (C) Over heating characteristics Alarm hold time vs. Power supply voltage —— TOH,TH vs. Vec : ese I eendwnnh | 5 ee ton ges i Zao eee ee Ef oo SES 26) | | 2 rte ge ce es ra i ~ poe Ed Se ed 5E eo 4— gis -_ ge = | | eee ee Se Se £5 60 ;-—— —n i Zos + . ra | t | | | g 20 1 To TH if if iH if o 4. = = + percent ot + ai | 2 13 14 1S 16 7 18 oO — Power supply voltage : Vec(V) 12 13 14 1S 16 7 18 Power supply voltage : Vcc (V) Ee Fuji Electric Co.,Ltd. MS6M0277 wrsfr4 H04-004-03
11-2.Inverter AVIN-9R Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage = i=1
0 Teese “0-3 a
I Po Veen isvii3v | { —y if Ve CRT AV. T SV BV 5200 ere 200 2160 2160 . zo. | raat ] | Y E i i a I 5 120-— $120! t Fi | re cenel i 7
5 J Bo | y
ans t i | Z § | ol | o-— 0} 0 1 2 3 4 5 0 1 2 3 4 5 Collector-Emitter voltage : Vce (V) Collector-Emitter voltage : Vce (V) Switching time vs. Collector current Switching time vs. Collector current 3EEs dea 300V,Ver=15V,Tj=25 a Edce=300V,Vec=15V,Tj=125 egees z ee £ a i eee ee) Sto0-— ton_| = 1000+ Sa eae eee ee 82333 ba Poon) t t pip = frevnent + at eeee sn Peon | | oe ia gs po an aaa ! - fBrss)/ Fo | ae | | Bosge| 100} i : t + = tp § 100 ———— seezg 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 eaece Collector current ; lc (A) Collector current : le (A) Reverse recovery characteristics oa Forward current vs. Forward voltage ____trryiir_vs. IF _ | nase... ee ee ee ee Z peepee toot 2200 = 160} | f\\. | get ‘ focnneapenna i cooniperiocn foc abe ann anes oe | | | ge | { i i i ; 2s ce a | pony Sep Tt — 40; 7 T tT BS 10 bh fee 00 05 «10 +15 20 25 30 35 40 . 0 20 40 60 80 100 120 140 160 Forward voltage : VF (V) Forward current : IF (A) Fuji Electric Co.,Ltd. MS6M0277) unas [| Tj H04-004-03
Reversed biased safe operating area Transient thermal resistance Veo=15V, TiS 125 ._ eee 1000 T 7 z | Wo 900 + i = t + : > gq 800 so: ; i 700}— | Kt = t + ‘1 iat = | i \\ 8 1 = so0+ T = 409 T r4 0.001 0.01 0.1 a 0, ~ Pulse width :Pw (sec) o 100 200 300 400 500 600 700 Collector-Emitter voltage : Vee (V) Power derating for IGBT Power derating for FWD (per device) (per device) = OE Tape a ee a aS 140 = — Toot 1 T T SEE an en ane § 100 ———— ee oon : eee aE t ogee ef t 1 { i" | % f- feo coh t SBE84] =) pet 5 60 — ££535| § 200 3 Top cf geese) = 1 { { i f of got t - : + BEBES] Ebene { | ct ; g 205 oe met Egses| © 9 EE [osc poy B ob | st a ae ae PEpes 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 gears Case Temperature : Tc (6) Case Temperature : Tc (‘C) esege fg558 ERSEE Switching Loss vs. Collector Current Switching Loss vs. Collector Current mis Ede=300V,Vec=15V, Tj=25C 1s Edc=300V,Vee=1 5V,Tj=125°C 338. areas ig ae S00 Were To TO 2 - | ee) z fon - | , 4 Eoff 310 tt B10 pa - Fhe (noe bod 2 | | ml 2) | Fer 2 a — § 4a 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Collector Current : ic (A) Collector Current : lc (A) EA Fuji Electric Co.,Ltd. MS6M0277_) wnsEr4 H04-004-03
Over Current Protection vs. Junction temperature Vec=15V = 360 -— g 320 - + + + . 3 280: + | © 249 ——— g = so +++ + a a a re 0 2 40 60 80 100 120 140 Junction temperature : Tj (°C) eyes 22588 BeE8 egSoe feb28 Fuji Electric Co.,Ltd. MS6M0277 _i3ns — H04-004-03
12.Example of applied circuit (ABB) 20kQ P AC200V woh k es ei) «PMP 0 ce Ty 4 2) Bs] | 20k9 D [nol Fee iow | a D +2 | ° 0 ZZ : a, 20k9 [nok AE iow gl p \\ al p O | 20k0 | Ivo tis 10uF 4] roege 6 uF + The wiring between opto-coupler and input terminal of IPM should be shorter as much as possible. The stray-capacitance between primary and secondary side of opto-coupler should not be increased by pattern lay-out. AKAAFDEPMOAAMF MARIS, TH SEIT UR FAZIO R:-2RMOPRARS ME HRUANI-—YLITORELTFEL. + Capacitor should be installed to VCC-GND terminal of high-speed opto- coupler closely as much as possible. . BBR bATIO Vec-GNDMlclt, AVF VPS CA SKIFABL TRY MITT FEU. + Use high-speed opto-coupler : tPLH,tPHL S 0.8us, high CMR type. (Example : HCPL-4504) BRK bATS :tPLH,tPHL $0.8 us, CMRY4 SECA PEL. (PI HPCL-4504) + Low-speed opto-coupler : CTR 2 100% ERK hATS:CTRZ 100% Fuji Electric Co.,Ltd. MS6M0277 wns—ro H04-004-03
+ Each power supply for drive circuit should not have transient voltage fluctuation. Four power supplies which are isolated should be supplied individually. SHODARASRRRERHOD IC, BRLLOOE 4 PRUICLTHRLTFSU. + The DC bus line to the P-N terminal should have lower inductance as much as possible, such as connecting capacitor to P-N terminal, in order to reduce surge voltage. PNE OB ABRIL TE SEIET VIDS VAIL, PNRF MIC IY TYPE RMT SRELTH— VRESERLTRAL. + In order to avoid noise from AC line, connect capacitor (about 4.7uF) between three-phase line and earth. ACS 4 YMBD/ 4 KARAS SEO, SHB R-AMMIIC 4. 7NFREOIYT VY ERRL TFSI. + Do not connect N-terminal of main circuit to ground (GND) of input circuit. AABROFSY K (GND) CEBBN HFS IPM OM CHRLENTEEU. + In case of using connector for connection to control terminal, it must be Au-plated electrode and 2.54mm of pitch. SMRFCORMBICIAISERUSBAlS, SAYS BE: 2.54mM CvFOOOS CHAPS. + When capacitor is connected between input and GND terminal, pay attention to longer delay time after signal inputted to primary side of opto-coupler. tEEE AAMF-GNDB ICTY TF VP EBRTSERbEATI IU RAAAES CHT SHSBMORS VET Bess DCCEEFEW. 22556 Ege aE Fuji Electric Co.,Ltd. AY S6MO0277 iss H04-004-03