6MBI550V-120-50 FUJI

Document overview

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Technical content

Features

P.C.Board Mount Low VCE (sat)

Applications

AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at T C=25°C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Inverter Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current IC Continuous TC=25°C 750 AIC pulse 1ms TC=100°C 550 -IC 1100 -IC pulse 1ms 550 Collector power dissipation PC 1 device 1100 W Junction temperature Tj 2500 Operating junciton temperature (under switching conditions) Tjop 150 Case temperature TC 125 Storage temperature Tstg -40 ~ +125 Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. 2500 VACBetween thermistor and others (*2) Screw torque Mounting (*3) - 3.5 N mTerminals (*4) 4.5 Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable Value : 2.5-3.5 Nm (M5) Note *4: Recommendable Value : 3.5-4.5 Nm (M6)

http://www.fujielectric.com/products/semiconductor/ IGBT Modules Electrical characteristics (at T j= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. Inverter Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 3.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 600 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 600mA 6.0 6.5 7.0 V Collector-Emitter saturation voltage VCE (sat) (terminal) VGE = 15V IC = 600A V Tj=125°C - 2.85 - Tj=150°C - 2.90 - VCE (sat) (chip) VGE = 15V IC = 600A Tj=125°C - 2.20 - Tj=150°C - 2.25 - Internal gate resistance RG (int) - - 1.10 - Ω Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 48 - nF Turn-on time ton VCC = 600V IC = 600A VGE = ±15V RG = 0.62Ω LS = 80nH - 550 - nsec tr - 180 - tr (i) - 120 - Turn-off time toff - 1050 - tf - 110 - Forward on voltage VF (terminal) VGE = 0V, IF = 600A V Tj=125°C - 2.55 - Tj=150°C - 2.50 - VF (chip) VGE = 0V, IF = 600A Tj=125°C - 1.90 - Tj=150°C - 1.85 - Reverse recovery time trr IF = 600A - 200 - nsec Thermistor Resistance R T = 25°C - 5000 - ΩT = 100°C 465 495 520 B value B T = 25 / 50°C 3305 3375 3450 K Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance (1device) Rth(j-c) Inverter IGBT - - 0.060 °C/WInverter FWD - - 0.100 Contact thermal resistance (1device) (*5) Rth(c-f) with Thermal Compound - 0.0167 - Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. Equivalent Circuit Schematic [ Inverter ] [ Thermistor ]

http://www.fujielectric.com/products/semiconductor/ 6MBI550V-120-50 Characteristics (Representative) 0.1 100 1000 0 10 20 30 Cies Coes Cres 200 400 600 800 1000 1200 1400 0 1 2 3 4 5 15V 15V12V 10V 10V 200 400 600 800 1000 1200 1400 0 1 2 3 4 5 VGE=20V 12V 200 400 600 800 1000 1200 1400 0 1 2 3 4 5 125°C Tj=25°C 150°C 5 10 15 20 25 IC=1200A IC=600A IC=300A -20 -15 -10 -6000 -3000 0 3000 6000 -1000 -800 -600 -400 -200 200 400 600 800 1000 VGE=20V VGE VCE Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage: VCE [V] Collector current : IC [A] Collector-Emitter voltage: VCE [V] Collector current : IC [A] [ Inverter ] Capacitance: Cies, Coes, Cres [nF] Gate charge: QG [nC] Collector-Emitter voltage: VCE [V] Collector current : IC [A] Collector - Emitter voltage : VCE [V] Gate - Emitter voltage: VGE [V] Collector - Emitter voltage: VCE [V] Dynamic gate charge (typ.) Collector - Emitter voltage: VCE [V] Gate - Emitter voltage: VGE [V] Capacitance vs. Collector-Emitter voltage (typ.) [ Inverter ] Tj= 25°C / chip [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip [ Inverter ] VGE=0V, f= 1MHz, Tj= 25°C VCC=600V, IC=600A,Tj= 25°C [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip Tj= 150°C / chip Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ]

http://www.fujielectric.com/products/semiconductor/ IGBT Modules 100 1000 10000 0 500 1000 1500 100 1000 10000 0 500 1000 1500 Tj=125oC Tj=150oC 100 1000 10000 0.1 1 10 100 tf tr toff ton Tj=125oC Tj=150oC 100 200 300 400 0 1 10 100 Eoff Err Eon Tj=125oC Tj=150oC 200 400 600 800 1000 1200 1400 0 500 1000 1500 Notice) Switching characteristics of V CE is defined between Sense C1,3,5 and Sense E1,3,5 for Upper arm(U,V,W) and Sense E1,3,5 and Sense E2,4,6 for Lower arm(X,Y,Z) . 100 150 200 250 0 500 1000 1500 Tj=125oC Tj=150oC toff ton tr tf toff ton tr tf Eoff Err Eon VCC=600V, VGE=±15V, RG=0.62Ω, Tj= 25°C [ Inverter ] Switching time vs. Collector current (typ.) [ Inverter ] Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=0.62Ω, Tj= 125°C, 150°C Switching time : ton, tr, toff, tf [ nsec ] Collector current: IC [A] Switching time : ton, tr, toff, tf [ nsec ] Collector current: IC [A] VCC=600V, VGE=±15V, RG=0.62Ω, Tj=125°C, 150°C [ Inverter ] Switching loss vs. Collector current (typ.) Gate resistance : RG [Ω] (Main terminals) Gate resistance : RG [Ω] Collector current: IC [A] Collector-Emitter voltage : VCE [V] [ Inverter ] VCC=600V, IC=550A, VGE=±15V, Tj= 125°C, 150°C Switching time vs. gate resistance (typ.) +VGE=15V,-VGE ≤= 15V, RG ≥= 0.62Ω ,Tj = 150°C [ Inverter ] VCC=600V, IC=600A, VGE=±15V, Tj=125°C, 150°C Switching loss vs. gate resistance (typ.) [ Inverter ] Reverse bias safe operating area (max.) Collector current: IC [A] Switching time : ton, tr, toff, tf [ nsec ] Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching loss : Eon, Eoff, Err [mJ/pulse ]

http://www.fujielectric.com/products/semiconductor/ 6MBI550V-120-50 0.001 0.01 0.1 0.001 0.01 0.1 1 τ [sec] 0.00232 0.03007 0.05976 0.07082 Rth IGBT 0.00644 0.01632 0.02305 0.01420 [°C/W] FWD 0.01073 0.02719 0.03842 0.02366 200 400 600 800 1000 1200 1400 0 1 2 3 T j=25°C 150°C 125°C 100 1000 10000 0 500 1000 1500 Irr trr 0.1 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 200 400 600 800 1000 1200 0 500 1000 1500 Pmax=550kW FWD IGBT 100 1000 10000 0 500 1000 1500 Irr trr Tj=125°C Tj=150°C Transient Thermal Resistance (max.) Temperature characteristic (typ.) Tj=150°C FWD safe operating area (max.) [INVERTER] Forward Current vs. Forward Voltage (typ.) chip [THERMISTOR] Reverse Recovery Characteristics (typ.) VCC=600V, VGE=±15V, RG=0.62Ω, Tj=125°C, 150°C Reverse Recovery Characteristics (typ.) VCC=600V, VGE=±15V, RG=0.62Ω, Tj=25°C [INVERTER][INVERTER] Pulse Width : PW [sec] Thermal resistanse: Rth(j-c) [°C/W] Forward on voltage: VF [V] Forward current: IF [A] Forward current: IF [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Temperature [°C] Resistance : R [kΩ] Collector-Emitter voltage: VCE [V] (Main terminals) Reverse recovery current: Irr [A] Forward current: IF [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec]

http://www.fujielectric.com/products/semiconductor/ IGBT Modules Outline Drawings, mm

http://www.fujielectric.com/products/semiconductor/ 6MBI550V-120-50 WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
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