6MBI50VA-060-50

6MBI50VA-060-50 FUJI

Document overview

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Technical content

Features

P.C.Board Mount Low VCE (sat)

Applications

AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at T C=25°C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Inverter Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Collector current IC Continuous TC=80°C 50 AIC pulse 1ms TC=80°C 100 -IC 50 -IC pulse 1ms 100 Collector power dissipation PC 1 device 200 W Junction temperature Tj 175 Operating junciton temperature (under switching conditions) Tjop 150 Case temperature TC 125 Storage temperature Tstg -40 ~ +125 Isolation voltage Between terminal and copper base (*1) Between thermistor and others (*2) Viso AC : 1min. 2500 VAC Screw torque Mounting (*3) - M5 3.5 N m Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5)

http://www.fujielectric.com/products/semiconductor/ IGBT Modules Electrical characteristics (at T j= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. Inverter Zero gate voltage collector current ICES VGE = 0V, VCE = 600V - - 1.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 200 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 50mA 6.2 6.7 7.2 V Collector-Emitter saturation voltage VCE (sat) (terminal) VGE = 15V IC = 50A V Tj=125°C - 2.20 - Tj=150°C - 2.40 - VCE (sat) (chip) VGE = 15V IC = 50A Tj=125°C - 1.90 - Tj=150°C - 2.10 - Internal gate resistance RG (int) - 0 - Ω Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 3.3 - nF Turn-on time ton VCC = 300V IC = 50A VGE = +15 / -15V RG = 43Ω - 0.36 1.20 µs tr - 0.25 0.60 tr (i) - 0.07 - Turn-off time toff - 0.52 1.20 tf - 0.03 0.45 Forward on voltage VF (terminal) IF = 50A V Tj=125°C - 1.80 - Tj=150°C - 1.75 - VF (chip) IF = 50A Tj=125°C - 1.50 - Tj=150°C - 1.45 - Reverse recovery time trr IF = 50A - - 0.35 µs Thermistor Resistance R T = 25°C - 5000 - ΩT = 100°C 465 495 520 B value B T = 25 / 50°C 3305 3375 3450 K Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance (1device) Rth(j-c) Inverter IGBT - - 0.71 °C/WInverter FWD - - 1.15 Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 - Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. Equivalent Circuit Schematic [ Thermistor ][ Inverter ] WVU 13,14 15,16 19,2021,22 17 18 23,24 25,26 27,28 WVU 13,14 15,16 19,2021,22 17 18 23,24 25,26 27,28

http://www.fujielectric.com/products/semiconductor/ 6MBI50VA-060-50 Characteristics (Representative) 100 0 1 2 3 4 5 VGE =20V 15V 12V 10V 100 0 1 2 3 4 5 10V 15V 12V VGE=20V 100 0 1 2 3 4 5 125°C Tj=25°C 150°C 5 10 15 20 25 0.1 1.0 10.0 100.0 0 10 20 30 40 Cies Coes Cres -400 0 400 VGE IC=100A IC=50A IC=25A VCE Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage: VCE [V] Collector current : IC [A] Collector-Emitter voltage: VCE [V] Collector current : IC [A] [ Inverter ] Capacitance: Cies, Coes, Cres [nF] Gate charge: QG [nC] Collector-Emitter voltage: VCE [V] Collector current : IC [A] Collector - Emitter voltage : VCE [V] Gate - Emitter voltage: VGE [V] Collector - Emitter voltage: VCE [V] Dynamic gate charge (typ.) Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] Capacitance vs. Collector-Emitter voltage (typ.) [ Inverter ] Tj= 25°C / chip [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip [ Inverter ] VGE=0V, f= 1MHz, Tj= 25°C VCC=300V, IC=50A,Tj= 25°C [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip Tj= 150°C / chip Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ]

http://www.fujielectric.com/products/semiconductor/ IGBT Modules 100 150 0 100 200 300 400 500 600 700 800 RBSOA (Repetitive pulse) 100 1000 10000 0 50 100 150 toff 100 1000 10000 0 50 100 150 toff 100 1000 10000 10.0 100.0 1000.0 tr tf ton toff 0 25 50 75 100 E rr(125°C) Err(150°C) EP⒎(125°C) EP⒎(150°C) Eon(125°C) Eon(150°C) 10 100 1000 Eon(125°C) Eon(150°C) Eoff(125°C) Eoff(150°C) Err(125°C) Err(150°C) ton tr tf ton tr tf VCC=300V, VGE=±15V, RG=43Ω, Tj= 125°C [ Inverter ] Switching time vs. Collector current (typ.) [ Inverter ] Switching time vs. Collector current (typ.) VCC=300V, VGE=±15V, RG=43Ω, Tj= 150°C Switching time : ton, tr, toff, tf [ nsec ] Collector current: IC [A] Switching time : ton, tr, toff, tf [ nsec ] Collector current: IC [A] VCC=300V, VGE=±15V, RG=43Ω [ Inverter ] Switching loss vs. Collector current (typ.) Gate resistance : RG [Ω] (Main terminals) Gate resistance : RG [Ω] Collector current: IC [A] Collector-Emitter voltage : VCE [V] [ Inverter ] VCC=300V, IC=50A, VGE=±15V, Tj= 125°C Switching time vs. gate resistance (typ.) +VGE=15V,-VGE <= 15V, RG >= 43Ω ,Tj <= 150°C [ Inverter ] VCC=300V, IC=50A, VGE=±15V Switching loss vs. gate resistance (typ.) [ Inverter ] Reverse bias safe operating area (max.) Collector current: IC [A] Switching time : ton, tr, toff, tf [ nsec ] Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching loss : Eon, Eoff, E [mJ/pulse ]

http://www.fujielectric.com/products/semiconductor/ 6MBI50VA-060-50 0.01 0.10 1.00 10.00 0.001 0.010 0.100 1.000 FWD[Inverter] IGBT[Inverter] 0.1 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 100 0 1 2 3 4 5 Tj=125°C Tj=25°C 100 1000 0 50 100 150 trr(150°C) Tj=150°C Irr(125°C) Irr(150°C) trr(125°C) τ [sec] 0.0023 0.0301 0.0598 0.0708 Rth IGBT 0.07616 0.19308 0.27277 0.16800 [°C/W] FWD 0.12335 0.31274 0.44181 0.27211 [ Inverter ] Forward current vs. forward on voltage (typ.) chip [ Inverter ] VCC=300V, VGE=±15V, RG=43Ω Reverse recovery characteristics (typ.) Transient thermal resistance (max.) Forward on voltage : VF [V] Thermal resistanse : Rth(j-c) [ °C/W ] Forward current : IF [A] Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Pulse width : Pw [sec] Temperature [°C ] Resistance : R [kΩ] [ Thermistor ] Temperature characteristic (typ.) Forward current : IF [A] Outline Drawings, mm

http://www.fujielectric.com/products/semiconductor/ IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
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• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
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