6MBI35U4A-120-50 FUJI
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Device Name : Type Name : Spec. No. : H04-004-07b IGBT Module 6MBI35U4A-120-50 MS5F06818 MS5F06818 (RoHS compliant product) Feb. 23 ’07 S.Igarashi S.Ogawa K.Yamada T.MiyasakaFeb. 23 ’07 a
R e v i s e d R e c o r d s Date Classi- fication Ind. Content Applied date Drawn Checked Checked Approved Enactment Issued date MS5F06818 Feb -23-’07 a aRevisionMay.-15-’07 K.Yamada T.Miyasaka K.Yamada T.MiyasakaS.Igarashi S.IgarashiH.EndoRevised Electrical characteristics. (P4/14)
a 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit [ Inverter ] [ Thermistor ] 6MBI35U4A-120-50 (RoHS compliant product) U V W 13,14 15,16 19,2021,22 17 18 23,24 25,26 27,28 U V W 13,14 15,16 19,2021,22 17 18 23,24 25,26 27,28
a 3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified ) Tc=25°C Tc=80°C Tc=25°C Tc=80°C (*1) All terminals should be connected together when isolation test will be done. (*2) Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : 2.5~3.5 Nm (M5) UnitsMaximum Ratings A W Tstg Mounting (*3) between terminal and copper base (*1) between thermistor and others (*2) Storage temperature Isolation voltage Viso Junction temperature -Ic 35 205 -Ic pulse Pc Tj 1 device 150 VAC N m3.5 V ±20 V -40 ~ +125 2500 Items Symbols Conditions VCES Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation VGES AC : 1min. 1200 Ic Icp 100 Continuous 1ms 1ms Screw Torque - 4. Electrical characteristics ( at Tj= 25°C unless otherwise specified) Forward on voltage VF (terminal) Tj=125°C Tj= 25°C Tj=125°C Tj= 25°C Tj=125°C Ic = 35A VGE=15V Tj= 25°C K3305 3375 3450T = 25/50°C Thermistor Resistance R T = 25°C B 495 B value 7.1 V 2.20 2.05 nA 1.0 mA 200 VCE = 1200V 6.5 VGE = 0V Ic = 35mA VCE = 20V 0.18 0.14 VCE = 0V - 5.5 2.10 - 1.90 2.65 VGE=±20V 1.00 μs nF- 0.30 1.20 0.60 trr 1.75 2.05 2.05 - 2.25 VF (chip) Tj= 25°C - Tj=125°CIF = 35A ΩT =100°C 465 V 1.70 1.60 1.85 1.85- 520 - μsIF = 35A - 5000 - - 0.35Reverse recovery time IGES Zero gate voltage Collector current ICES ton CiesInput capacitance Collector-Emitter saturation voltage VCE(sat) (terminal) VCE(sat) (chip) Gate-Emitter threshold voltage 0.39- 0.03-tr (i) VCE=10V,VGE=0V,f=1MHz Vcc = 600V Ic = 35A VGE=±15V Turn-off time Turn-on time Inverter 0.32 VGE(th) Rg = 33 Ω tf toff tr VGE=0V UnitsItems Symbols Conditions Characteristics min. typ. max. Gate-Emitter leakage current a
a 5. Thermal resistance characteristics (1device) (*4) (*4) This is the value which is defined mounting on the additional cooling fin with thermal compound. Display on the module label - Logo of production - Type neme: 6MBI35U4A-120-50 - IC, VCES rating: 35A 1200V - Lot No (5 digits) - Place of manufacturing (code) - Bar code Be careful to solderability of the terminals if the module has passed over one year from manufacturing date, under the above storage condition. 9. Definitions of switching time 10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box °C/W 0.60 - 0.88 0.05 Unitsmin. typ. max.Items Symbols Conditions Characteristics Contact Thermal resistance Thermal resistance(1device) - Rth(j-c) Inverter IGBT Inverter FWD Rth(c-f) with Thermal Compound 7. Applicable category 6. Indication on module This specification is applied to Power Integrated Module named 6MBI35U4A-120-50. 8. Storage and transportation notes The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting. Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. L Vcc Ic VCE RG VGE VGE VCE Ic0V 10% 90% 10% 10% 90% 90% Ic VCE ont rt r(i)t offt ft rrI rrt
a No. Parts Material (main) Ref.
1 Base Plate Cu Ni plating
Ni plating (Internal) Lead free solder plating (External)
3 Cover PPS resin UL 94V-0
4 Case PPS resin UL 94V-0
5 Isolation substrate Al2O3 + Cu
6 IGBT chip Silicon
7 Wiring Aluminum
8 Silicone Gel Silicone resin
9 Adhesive Silicone resin
10 Solder(Under chip) Sn/Ag base (Not drawn in above)
(Under Isolation substrate )
12 Label Paper (Not drawn in above)
13 FWD chip Silicon
14 Ring Fe Trivalent Chromate treatment
15 Thermistor Lead glass
(Not drawn in above)
2 Terminal Cu
11 Sn/Ag base
- List of mater ials (Total weight of soldering material(typ.): 4.4g) 12. RoHS Directive Compliance 本IGBTモジュールは富士電機デバイステクロノジーが発行しているRoHSに関する資料MS5F6209 を適用する。日本語版（MS5F6212）は参考資料にする。 The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to this IGBT Module. The Japanese Edition (MS5F6212) is made into a reference grade.
a 13. Reliability test results Reliability Test Items Test cate- gories Test items Test methods and conditions Reference norms EIAJ ED-4701 (Aug.-2001 edition) Number of sample Accept- ance number
1 Terminal Strength Pull force : 20N Test Method 401 5 ( 0 : 1 )
(Pull test) Test time : 10±1 sec. MethodⅠ 2 Mounting Strength Screw torque : 2.5 ~ 3.5 N･m (M5) Test Method 402 5 ( 0 : 1 ) Test time : 10±1 sec. methodⅡ
3 Vibration Range of frequency : 10 ~ 500Hz Test Method 403 5 ( 0 : 1 )
Sweeping time : 15 min. Reference 1 Acceleration : 100m/s2 Condition code B Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction)
4 Shock Maximum acceleration : 5000m/s2 Test Method 404 5 ( 0 : 1 )
Pulse width : 1.0msec. Condition code B Direction : Each X,Y,Z axis Test time : 3 times/direction 5 Solderabitlity Solder temp. : 245±5 ℃ Test Method 303 5 ( 0 : 1 ) Immersion time : 5±0.5sec. Condition code A Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. 6 Resistance to Solder temp. : 260±5 ℃ Test Method 302 5 ( 0 : 1 ) Soldering Heat Immersion time : 10±1sec. Condition code A Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. 1 High Temperature Storage temp. : 125±5 ℃ Test Method 201 5 ( 0 : 1 ) Storage Test duration : 1000hr. 2 Low Temperature Storage temp. : -40±5 ℃ Test Method 202 5 ( 0 : 1 ) Storage Test duration : 1000hr. 3 Temperature Storage temp. : 85±2 ℃ Test Method 103 5 ( 0 : 1 ) Humidity Relative humidity : 85±5% Test code C Storage Test duration : 1000hr. 4 Unsaturated Test temp. : 120±2 ℃ Test Method 103 5 ( 0 : 1 ) Pressurized Vapor Test humidity : 85±5% Test code E Test duration : 96hr.
5 Temperature Test Method 105 5 ( 0 : 1 )
Cycle Test temp. : Low temp. -40±5 ℃ High temp. 125 ±5 ℃ RT 5 ~ 35 ℃ Dwell time : High ~ RT ~ Low ~ RT Number of cycles : 100 cycles
6 Thermal Shock +0 Test Method 307 5 ( 0 : 1 )
Test temp. : High temp. 100 ℃ method Ⅰ +5 Condition code A Low temp. 0 -0 ℃ Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles Mechanical TestsEnvironment Tests
a Reliability Test Items Test cate- gories Test items Test methods and conditions Reference norms EIAJ ED-4701 (Aug.-2001 edition) Number of sample Accept- ance number
1 High temperature Test Method 101 5 ( 0 : 1 )
Reverse Bias Test temp. : Ta = 125±5 ℃ (Tj ≦ 150 ℃) Bias Voltage : VC = 0.8×VCES Bias Method : Applied DC voltage to C-E VGE = 0V Test duration : 1000hr.
2 High temperature Test Method 101 5 ( 0 : 1 )
Bias (for gate) Test temp. : Ta = 125±5 ℃ (Tj ≦ 150 ℃) Bias Voltage : VC = VGE = +20V or -20V Bias Method : Applied DC voltage to G-E VCE = 0V Test duration : 1000hr.
3 Temperature Test Method 102 5 ( 0 : 1 )
Humidity Bias Test temp. : 85±2 oC Condition code C Relative humidity : 85±5% Bias Voltage : VC = 0.8×VCES Bias Method : Applied DC voltage to C-E VGE = 0V Test duration : 1000hr. 4 Intermitted ON time : 2 sec. Test Method 106 5 ( 0 : 1 ) Operating Life OFF time : 18 sec. (Power cycle) Test temp. : ' Tj=100±5 deg ( for IGBT ) Tj ≦ 150 ℃, Ta=25±5 ℃ Number of cycles : 15000 cycles Endurance TestsEndurance Tests Failure Criteria Item Characteristic Symbol Failure criteria Unit Note Lower limit Upper limit Electrical Leakage current ICES - USL×2 mA characteristic ±IGES - USL×2 PA Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA Saturation voltage VCE(sat) - USL×1.2 V Forward voltage VF - USL×1.2 V Thermal IGBT ' VGE - USL×1.2 mV resistance or ' VCE FWD ' VF - USL×1.2 mV Isolation voltage Viso Broken insulation - Visual Visual inspection inspection Peeling - The visual sample - Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.
a Reliability Test Results Test cate- gories Test items Reference norms EIAJ ED-4701 (Aug.-2001 edition) Number of test sample Number of failure sample
1 Terminal Strength Test Method 401 5 0
(Pull test) MethodⅠ
2 Mounting Strength Test Method 402 5 0
methodⅡ
3 Vibration Test Method 403 5 0
4 Shock Test Method 404 5 0
5 Solderabitlity Test Method 303 5 0
6 Resistance to Soldering Heat Test Method 302 5 0
1 High Temperature Storage Test Method 201 5 0
2 Low Temperature Storage Test Method 202 5 0
3 Temperature Humidity Test Method 103 5 0
4 Unsaturated Test Method 103 5 0
Pressurized Vapor Test code E
5 Temperature Cycle Test Method 105 5 0
6 Thermal Shock Test Method 307 5 0
method Ⅰ Condition code A
1 High temperature Reverse Bias Test Method 101 5 0
2 High temperature Bias Test Method 101 5 0
( for gate )
3 Temperature Humidity Bias Test Method 102 5 0
4 Intermitted Operating Life Test Method 106 5 0
(Power cycling) ( for IGBT ) Mechanical TestsEnvironment TestsEndurance Tests
a Vcc=600V， Ic=35A，Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°C Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) Tj= 25°C / chip VGE=15V / chip Tj=25°C / chip [ Inverter ] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) [ Inverter ] [ Inverter ] [ Inverter ] [ Inverter ] Tj= 125°C / chip Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current : Ic [A] VGE=20V 15V 12V 10V 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current : Ic [A] VGE=20V 15V 12V 10V 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current : Ic [A] Tj=125°CTj=25°C 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Collector - Emitter voltage : VCE [ V ] Ic=70A Ic=35A Ic=17.5A 0.1 1.0 10.0 0 10 20 30 Collector-Emitter voltage : VCE [V] Capacitance : Cies, Coes, Cres [ nF ] Cies Coes Cres 0 50 100 150 200 Gate charge : Qg [nC] Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] VGE VCE
a [ Inverter ] [ Inverter ] [ Inverter ] [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=33Ω, Tj= 25°C Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=33Ω, Tj=125°C Reverse bias safe operating area (max.) Vcc=600V, Ic=35A, VGE=±15V, Tj= 125°C +VGE=15V,-VGE <= 15V, RG >= 33Ω ,Tj <= 125°C Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=33Ω Switching loss vs. Gate resistance (typ.) [ Inverter ] [ Inverter ] Vcc=600V, Ic=35A, VGE=±15V, Tj= 25°C Switching time vs. Gate resistance (typ.) 100 1000 10000 0 20 40 60 Collector current : Ic [A] Switching time : ton, tr, toff, tf [ nsec ] ton 100 1000 10000 0 20 40 60 Collector current : Ic [A] Switching time : ton, tr, toff, tf [ nsec ] 100 1000 10000 10.0 100.0 1000.0 Gate resistance : Rg [Ω] Switching time : ton, tr, toff, tf [ nsec ] tr tf toff ton 0 10 20 30 40 50 60 70 Collector current : Ic [A] Eon(125°C) Eon(25°C) Eoff(125°C) Err(125°C) Err(25°C) Eoff(25°C) 10.0 100.0 1000.0 Gate resistance : Rg [Ω] Eoff Err Eon Switching loss : Eon, Eoff, Err [mJ/pulse ] 0 400 800 1200 Collector-Emitter voltage : VCE [V] Collector current : Ic [A] toff tr tf toff tr tf ton Switching loss : Eon, Eoff, Err [mJ/pulse ]
a [ Inverter ] [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=33Ω Forward current vs. Forward on voltage (typ.) chip [ Thermistor ] Transient thermal resistance (max.) Temperature characteristic (typ.) 0.1 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Resistance : R [kΩ] Temperature [°C ] 0 1 2 3 Forward on voltage : VF [V] Forward current : IF [A] Tj=125°CTj=25°C 100 1000 0 10 20 30 40 50 60 Forward current : IF [A] Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] trr (125°C) 0.010 0.100 1.000 10.000 0.001 0.010 0.100 1.000 Pulse width : Pw [sec] Thermal resistanse : Rth(j-c) [ °C/W ] FWD[Inverter] IGBT[Inverter] Irr (125°C) Irr (25°C) trr (25°C)
a Warnings - This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. If Printed Circuit Board is not suitable, the main pin terminals may have higher temperature than Tstg. Also the pin terminals shall be used within Tstg. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する 場合があります。また、使用するプリント板が不適切な場合、主端子ピンの温度がTstg以上になることがあります。主端子ピン もTstg範囲内でご使用下さい。 - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. 万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず 付けて火災，爆発，延焼等の２次破壊を防いでください。 - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. 製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命 を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。 - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。 - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. 本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959)。パワーサイクル耐量にはこのΔTjによる 場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による熱ストレスであり、本製品をご使用する際 の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、製品寿命に十分留意してご使用下さい。 - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. 主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合があります。 - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 冷却フィンはネジ取り付け位置間で平坦度を100mmで100um以下、表面の粗さは10um以下にして下さい。 過大な凸反り があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、 本製品と冷却フインの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。 - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) 素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、 塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。 コンバウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。 (実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。) - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊 する可能性があります。
a Cautions - Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. 富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、 誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災 等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保 のための手段を講じて下さい。 - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、 本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。 - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. 本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを 目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力 制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に 満足することをご確認の上、ご利用下さい。 If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd. Warn ing s - If excessive static electricity is applied to the control terminals, the devices m ay be broken. Im plement som e countermeasures against static electricity. 制御 端 子 に 過 大 な静 電 気 が 印加 され た場 合 、素 子が 破 壊 する場合 が あ ります。取り扱 い時は 静 電 気 対 策 を実 施 して下 さい。 - Never add the excessive mechanical stress to the main or control term inals when the product is applied to equipm ents. The module structure m ay be broken. 素子 を装 置 に 実 装す る際 に 、主端 子 や 制 御 端 子に 過大 な 応力 を与 えないで 下 さい。端 子 構 造 が 破 壊する可 能 性 があ ります。 - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this m alfunction. (Recom mended value : -VGE = -15V) 逆バ イアス ゲート電圧 -VGEが 不 足しますと誤 点 弧 を起 こす可 能 性が あ ります。誤 点 弧 を起 こさな い為に -VGEは 十 分 な値 で 設定 して 下 さい。 （推 奨 値 : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT m ay occur. Use this product in the m ost suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. ターンオ ン dv/dt が 高 いと対 抗 アームの ＩＧＢＴが 誤 点 弧 を起 こす可 能 性 が あ ります。誤 点 弧 を起 こさない 為の 最 適 なドライブ 条件 （+VGE, -VGE, RG等 ）で ご使 用 下さい。 - This product m ay be broken by avalanche in case of VCE beyond m axim um rating VCES is applied between C-E term inals. Use this product within its absolute m axim um voltage. VCESを超 え た電 圧 が印 加 され た場 合 、アバ ランシェを起 こして素子 破 壊 する場 合が あ ります。VCEは 必 ず絶 対定 格 の 範 囲 内 でご使 用 下 さい。 - Lower +VGE decrease IGBT saturation current. +VGE shall be set m ore or equal than 15V in case of maximum collector current to be 50A (2 tim es of Ic rating). If +VGE is less than 15V, the product m ay not be able to flow 50A of collector current. ゲート電 圧 が 低 いとIGBTの コレクタ飽 和 電 流 は下 が ります。定格 電 流の 2倍 (50A)まで使 用 する場 合は 、ゲート電 圧を15V以上 に 設 定して 下 さい。ゲ ート電 圧 が 15V未 満 です と、コレクタ飽 和電 流 は 50Aに 達しな い可 能 性が あ ります。 - Incase of soldering this product at excessiv e heat condition, the package of this product m ay be deteriorated. Please handle with care for soldering process. 製品 を過 大 な温 度 で半 田 付 けした場 合 、パ ッケー ジの 劣 化を引 起す可 能 性 があ ります。半 田付 けプロセスに 注 意 してご 使 用 ください。