6MBI300V-120-50 FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 6
Technical content
Features
P.C.Board Mount Low VCE (sat)
Applications
AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 °C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Inverter Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=80°C 300 AIcp 1ms Tc=80°C 600 -Ic 300 -Ic pulse 1ms 600 Collector power dissipation Pc 1 device 1600 W Junction temperature Tj 175 °COperation temperature Top 150 Storage temperature Tstg -40 to +125 Isolation voltage between terminal and copper base (*1) between thermistor and others (*2) Viso AC : 1min. 2500 VAC Screw torque Mounting (*3) - 3.5 N mTerminals (*4) - 4.5 Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) Note *4: Recommendable value : 3.5-4.5 Nm (M6)
http://www.fujisemi.com IGBT Modules Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Unitsmin. typ. max. Inverter Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 3.0 mA Gate-Emitter leakage current IGES VGE = 0V, VGE = ±20V - - 600 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 300mA 6.0 6.5 7.0 V Collector-Emitter saturation voltage VCE (sat) (terminal) VGE = 15V IC = 300A V Tj=125°C - 2.50 - Tj=150°C - 2.55 - VCE (sat) (chip) VGE = 15V IC = 300A Tj=125°C - 2.05 - Tj=150°C - 2.10 - Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 27 - nF Turn-on time ton VCC = 600V IC = 300A VGE = +15V RG = 0.93Ω - 550 1200 µs tr - 180 600 tr (i) - 120 - Turn-off time toff - 1050 2000 tf - 110 350 Forward on voltage VF (terminal) VGE = 0V IF = 300A V Tj=125°C - 2.30 - Tj=150°C - 2.25 - VF (chip) VGE = 0V IF = 300A Tj=125°C - 1.85 - Tj=150°C - 1.80 - Reverse recovery time trr IF = 300A - 200 600 µs Thermistor Resistance R T = 25°C - 5000 - ΩT = 100°C 465 495 520 B value B T = 25 / 50°C 3305 3375 3450 K Thermal resistance characteristics Items Symbols Conditions Characteristics Unitsmin. typ. max. Thermal resistance (1device)(*5) Rth(j-c) Inverter IGBT - - 0.094 °C/WInverter FWD - - 0.150 Contact thermal resistance (1device) (*6) Rth(c-f) with Thermal Compound - 0.0167 - Note *5: This value is including margins. This will be revised in future. Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound. Equivalent Circuit Schematic [Inverter] [Thermistor]
http://www.fujisemi.com 6MBI300V-120-50 Characteristics (Representative) [INVERTER][INVERTER] Collector-Emittervoltage vs.Gate-Emittervoltage(typ.) Tj=25°C/chip GateCapacitancevs.Collector-EmitterVoltage (typ.) Vge=0V,ƒ=1MHz,Tj=25°C DynamicGateCharge(typ.) Vcc=600V,Ic=300A,Tj=25°C [INVERTER] [INVERTER] [INVERTER] [INVERTER] Collectorcurrentvs.Collector-Emittervoltage(typ.) Tj=25°C/chip Collectorcurrentvs.Collector-Emittervoltage(typ.) Tj=150°C/chip Collectorcurrentvs.Collector-Emittervoltage(typ.) Vge=15V/chip 100 0 10 20 30 Collector-Emittervoltage: Vce[V] GateCapacitance: Cies, Coes, Cres [nF] *** Cies Coes Cres 100 200 300 400 500 600 700 0 1 2 3 4 5 Collector-Emittervoltage: Vce[V] Collectorcurrent: Ic [A] Vge=20V 15V 12V 10V 100 200 300 400 500 600 700 0 1 2 3 4 5 Collector-Emittervoltage: Vce[V] Collectorcurrent: Ic [A] Vge=20V 15V 12V 10V 100 200 300 400 500 600 700 0 1 2 3 4 5 Collector-EmitterVoltage: Vce[V] CollectorCurrent: Ic [A] 125°C Tj=25°C 150°C 5 10 15 20 25 Gate-EmitterVoltage: Vge[V] Collector-EmitterVoltage: Vce[V] Ic=600A Ic=300A Ic=150A 0 500 1000 1500 2000 2500 3000 3500 Gatecharge:Qg[nC] Collector-Emittervoltage: Vce[200V/div] Gate-Emittervoltage: Vge[5V/div] Vge Vce
http://www.fujisemi.com IGBT Modules Switchingloss vs. Gateresistance(typ.) Vcc=600V,Ic=300A,Vge=±15V,Tj=125°C,150°C [INVERTER] [INVERTER] Switchingtimevs.Collectorcurrent (typ.) Vcc=600V,Vge=±15V,Rg=0.93Ω,Tj=25°C Vcc=600V,Vge=±15V,Rg=0.93Ω,Tj=125°C,150°C [INVERTER] [INVERTER] Reversebiassafeoperatingarea(max.) +Vge=15V,-Vge≤15V,Rg≥0.93Ω,Tj=150°C Switchingtimevs.Gateresistance(typ.) Vcc=600V,Ic=300A,Vge=±15V,Tj=25°C Switchinglossvs.Collectorcurrent(typ.) Vcc=600,Vge=±15V,Rg=0.93Ω,Tj=125°C,150°C Switchingtime vs. Collectorcurrent (typ.) [INVERTER] [INVERTER] 100 1000 10000 0 100 200 300 400 500 600 700 Collectorcurrent: Ic [A] Switchingtime: ton, tr, toff, tf [nsec] tf tr toff ton 100 1000 10000 0 100 200 300 400 500 600 700 Collectorcurrent: Ic [A] Switchingtime: ton, tr, toff, tf [nsec] tf tr toff ton Tj=125oC Tj=150oC 100 1000 10000 0.1 1 10 100 Gateresistance: Rg[Ω] Switchingtime: ton, tr, toff, tf [nsec] tf tr toff ton 100 0 100 200 300 400 500 600 700 Collectorcurrent: Ic [A] Switchingloss: Eon, Eoff, Err[mJ/pulse] Eon Eoff Err Tj=125oC Tj=150oC 100 150 0 1 10 100 Gateresistance: Rg[Ω] Switchingloss: Eon, Eoff, Err[mJ/pulse] Eoff Err Eon Tj=125oC Tj=150oC 200 400 600 800 0 500 1000 1500 Collector-Emittervoltage:Vce[V] Collectorcurrent: Ic [A]
http://www.fujisemi.com 6MBI300V-120-50 Temperaturecharacteristic(typ.) [INVERTER] [INVERTER] TransientThermalResistance(max.) [INVERTER] ForwardCurrentvs.ForwardVoltage(typ.) chip [THERMISTOR] ReverseRecoveryCharacteristics(typ.) Vcc=600V,Vge=±15V,Rg=0.93Ω,Tj=125°C,150°C ReverseRecoveryCharacteristics(typ.) Vcc=600V,Vge=±15V,Rg=0.93Ω,Tj=25°C 100 200 300 400 500 600 700 0 1 2 3 Forwardonvoltage: Vf [V] Forwardcurrent: If [A] 125°C Tj=25°C 150°C 100 1000 10000 0 100 200 300 400 500 600 700 Forwardcurrent: If [A] Reverserecovery current: Irr[A] Reverserecovery time: trr[nsec] Irr trr 0.001 0.01 0.1 0.001 0.01 0.1 1 PulseWidth: Pw[sec] Thermalresistanse: Rth(j-c)[°C/W] *** FWD IGBT 0.1 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 Temperature[°C] Resistance: R [kΩ] 100 1000 10000 0 100 200 300 400 500 600 700 Forwardcurrent: If [A] Reverserecovery current: Irr[A] Reverserecovery time: trr[nsec] Irr trr Tj=125oC Tj=150oC
http://www.fujisemi.com IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd. is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.
- Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
- Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Systems Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
- Transportation equipment (mounted on cars and ships) • Trunk communications equipment
- Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
- Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
- Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
- Space equipment • Aeronautic equipment • Nuclear control equipment
- Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Systems Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Systems Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Systems Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Systems Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. Outline Drawings, mm