6MBI100U2B-060

6MBI100U2B-060 FUJI

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 6

Technical content

Features

• Low VCE(sat)
• Compact Package
• P.C. Board Mount Module

Applications

• Inverter for Motoe Drive
• AC and DC Servo Drive Amplifier
• Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) I Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Continuous 1ms 1 device AC : 1 minute 600 ±20 100 200 100 200 380 +150 -40 to +125 AC 2500 AC 2500 3.5 * V V A W V V N·m Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done.

VCE=600V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=100mA VGE=15V Ic=100A VGE=0V, VCE=10V, f=1MHz VCC=300V IC=100A VGE=±15V RG= 33 Ω VGE= 0 V IF=100A IF=100A T=25°C T=100°C T=25/50°C - - 1.0 - - 200 6.2 6.7 7.7 - 2.20 2.50 - 2.35 - - 1.85 - - 2.00 - - 8.4 - - 0.40 1.20 - 0.22 0.60 - 0.16 - - 0.48 1.20 - 0.07 0.45 - 1.95 2.30 - 2.00 - - 1.60 - - 1.65 - - - 0.35 - 3.4 - Electrical characteristics (Tj=25°C unless otherwise specified) Item Symbol Condition Characteristics Unit Min. Typ. Max. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip * Resistance B value Thermistor Inverter ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) C ies ton tr tr(i) toff tf VF (terminal) V F (chip) t rr R lead R B mA nA V V nF µs V µs mΩ Ω K Item Symbol Condition Characteristics Unit Min. Typ. Max. IGBT FWD With thermal compound Thermal resistance ( 1 device ) Rth(j-c) Contact thermal resistance * Rth(c-f) Thermal resistance Characteristics IGBT Module * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic - 5000 - 465 495 520 3305 3375 3450 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 6MBI100U2B-060 UV W 13,14,15 16,17,18 21,22,2324,25,26 19 20 27,28,29 30,31,32 33,34,35 - - 0.33 - - 0.66 °C/W - 0.05 - * Biggest internal terminal resistance among arm.

IGBT Module 6MBI100U2B-060 Characteristics (Representative) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Tj=25°C / chip VGE=0V, f= 1MHz, Tj= 25°C Vcc=300V, Ic=100A, Tj= 25°C 100 150 200 250 012345 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 100 150 200 250 012345 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 100 150 200 250 01234 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] Tj=125°CTj=25°C 5 1 01 52 02 5 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] Ic=200A Ic=100A Ic= 50A 0.1 1.0 10.0 100.0 01 0 2 0 3 0 Capacitance : Cies, Coes, Cres [ nF ] Collector-Emitter voltage : VCE [V] Cies Coes Cres 100 200 300 400 500 0 100 200 300 400 500 Collector-Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] VGE VCE Gate - Emitter voltage : VGE [ V ]

IGBT Module 6MBI100U2B-060 Vcc=300V, Ic=100A, VGE=±15V, Tj= 125°C Reverse bias safe operating area (max.)Switching loss vs. Gate resistance (typ.) +VGE=15V,-VGE <= 15V, RG >= 33Ω ,Tj <= 125°C Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=33Ω , Tj= 25°C Vcc=300V, Ic=100A, VGE=±15V, Tj= 25°C Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=33Ω , Tj=125°C Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=33Ω 100 1000 10000 0 50 100 150 200 Switching time : ton, tr, toff, tf [ nsec ] Collector current : Ic [ A ] tr tf toff ton 100 1000 10000 0 50 100 150 200 Switching time : ton, tr, toff, tf [ nsec ] Collector current : Ic [ A ] tr tf toff ton 100 1000 10000 10.0 100.0 1000.0 Switching time : ton, tr, toff, tf [ nsec ] Gate resistance : Rg [ Ω ] tr tf toff ton 0 50 100 150 200 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Collector current : Ic [ A ] Eon(125°C) Eon(25°C) Eoff(125°C) Err(125°C) Err(25°C) Eoff(25°C) 10.0 100.0 1000.0 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Gate resistance : Rg [ Ω ] Eoff Err Eon 100 150 200 250 0 200 400 600 800 Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ]

IGBT Module 6MBI100U2B-060 Transient thermal resistance (max.) Reverse recovery characteristics (typ.) Vcc=300V, VGE=±15V, Rg=33Ω Forward current vs. Forward on voltage (typ.) chip Temperature characteristic (typ.) 0.1 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [°C ] Resistance : R [ kΩ ] 100 150 200 250 0123 Forward current : IF [ A ] Forward on voltage : VF [ V ] Tj=125°C Tj=25°C 100 1000 0 50 100 150 200 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] Irr (125°C) Irr (25°C) Irr (125°C) Irr (25°C) 0.01 0.10 1.00 10.00 0.001 0.010 0.100 1.000 Thermal resistanse : Rth(j-c) [ °C/W ] Pulse width : Pw [ sec ] FWD IGBT

IGBT Module 6MBI100U2B-060 ( ) shows reference dimension. Outline Drawings, mm