6MBI100S-140_01 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Compact Package
  • P.C.Board Mount Module
  • Low VCE(sat)

Applications

  • Inverter for Motor drive
  • AC and DC Servo drive amplifier
  • Uninterruptible power supply
  • Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Symbol Collector-Emitter voltage V CES Gate-Emitter voltage V GES Collector Continuous Tj=25°C IC current Tj=75°C 1ms Tj=25°C I C pulse Tj=75°C C 1ms -I C pulse Max. power dissipation (1 device) PC Operating temperature T j Storage temperature T stg Isolation voltage *1 V is Screw torque Mounting * 2 Rating 1400 ±20 150 100 300 200 100 200 700 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W V N·m Item Symbol Characteristics Conditions Unit Min. Typ. Max. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time I CES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr – – 1.0 – – 0.2 5.5 7.2 8.5 – 2.4 2.7 – 3.0 – – 12000 – – 2500 – – 2200 – – 0.35 1.2 – 0.25 0.6 – 0.1 – – 0.45 1.0 – 0.08 0.3 – 2.6 3.4 – 2.2 – – – 0.35 VGE=0V, VCE=1400V VCE=0V, VGE=±20V VCE=20V, IC=100mA Tj=25°C VGE=15V, IC=100A Tj=125°C V GE=0V VCE=10V f=1MHz V CC=800V IC=100A VGE=±15V RG=12Ω Tj=25°C IF=100A, VGE=0V Tj=125°C I F=100A mA µA V V pF µs V µs Electrical characteristics (at Tj=25°C unless otherwise specified) Thermal resistance characteristics Item Symbol Characteristics Conditions Unit Min. Typ. Max. Rth(j-c) Thermal resistance Rth(j-c) Rth(c-f)* – – 0.18 – – 0.36 – 0.05 – IGBT FWD the base to cooling fin °C/W °C/W °C/W *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic *1:All terminals should be connected together when isolation test will be done. : Recommendable value : 2.5 to 3.5 N·m (M5) 21(P) 20(N) 1(Gu) 2(Eu) 3(Gx) 5(Gv) 6(Ev) 19(U) 7(Gy) 17(V) 15(W) 9(Gw) 11(Gz) 10(Ew) 4(Ex) 8(Ey) 12(Ez) 13(P) 14(N)

12V15VVGE= 20V Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ] 012345 100 150 200 250 10V 12V15VVGE= 20V Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 012345 100 150 200 250 Tj= 25°C Tj= 125°C Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 5 1 01 52 02 5 Ic= 50A Ic= 100A Ic= 200A Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] 0 5 10 15 20 25 30 35 500 1000 10000 50000 Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] Coes Cres Cies 0 200 400 600 800 1000 200 400 600 800 1000 Dynamic Gate charge (typ.) Vcc=800V, Ic=100A, Tj= 25°C Gate charge : Qg [ nC ] Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 12ohm, Tj= 25°C Switching time : ton, tr, toff, tf [ nsec ] Collector current : Ic [ A ] 0 50 100 150 200 100 500 1000 tf tr ton toff Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 12ohm, Tj= 125°C Collector current : Ic [ A ] Switching time : ton, tr, toff, tf [ nsec ] 10 50 100 200 100 500 1000 5000 toff ton tr tf Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=100A, VGE=±15V, Tj= 25°C Gate resistance : Rg [ohm] Switching time : ton, tr, toff, tf [ nsec ] 0 50 100 150 200 Err(25°C) Eoff(25°C) Eon(25°C) Err(125°C) Eoff(125°C) Eon(125°C) Switching loss vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=12ohm Switching loss : Eon, Eoff, Err [ mJ/pulse ] Collector current : Ic [ A ] 10 50 100 300 Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=100A, VGE=±15V, Tj= 125°C Switching loss : Eon, Eoff, Err [ mJ/pulse ] Gate resistance : Rg [ohm] Eon Err Eoff 0 200 400 600 800 1000 1200 1400 1600 100 150 200 250 Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>12ohm, Tj=<125°C Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ]

Outline Drawings, mm 01234 100 150 200 250 Tj=25°CTj=125°C Forward current vs. Forward on voltage (typ.) Forward current : IF [ A ] Forward on voltage : VF [ V ] 0 50 100 150 200 100 300 Irr(125°C) Irr(25°C) trr(25°C) trr(125°C) Reverse recovery characteristics (typ.) Vcc=800V, VGE=±15V, Rg=12ohm Forward current : IF [ A ] Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 0.001 0.01 0.1 1 0.01 0.1 Transient thermal resistance Thermal resistanse : Rth(j-c) [ °C/W ] Pulse width : Pw [ sec ] FWD IGBT mass : 260g