6MBI100S-120-01 FUJI

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| | __Device Name: IGBT Module _ Type Name _:____ SMBI100S-120-01 erases | : Fuji Electric Co.,Ltd. Matsumoto Factory “| DATE | _NAME__| AppROvED| Fuji Electric Co,Ltd. DRAWN Jun. - 2 ~ col F Rebapaafe’ ; JORAWN Tian. = 2-601 F Abagaarfe’ s CHECKED Tae - 2-01 SS kodeta uf 3 ty Ee EN ES & MS5F 4848 Vann HO4~004~05

| | | Revised Records | =e Pee a Date fication Ind Content date Checked Approved Jun. 2-0] enactmen —— issued he ipa erage aa Ee ae | aaa ioe | Fuji Electric Co.Ltd. 3| MSS5F 4848 % oe HO4-004-06

po @mBii00s-120-01 | Lo —___j | 1. Outline Drawing (Unit: mm ) | ; 1a 1100.3 94,590.35 495.593 NE Te | fe ZZ WS) ig 5 = | 2 3 ~ E 99. 610.3 bid | ° S52e8 2 z rR en 3o4e | = 5 it tel QQ fo ; oo al f Chel SECTION A-A erste so eo [] shows theoretical dimension, 2. Equivalent circuit 21(P) 13(P) 1(Gu) | (Gy) ra 9(Gw) 4 2(Eu) O——9— 6(Ey) 20 (Ew) 19(U) a7) 15 (#) xoro_l rede nano 4(Ex) Ey) 12 (Ez) 20{N) 14(N) Fuji Electric Co.Ltd. 3| MSS5F 4848 A HO4-004-03

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Gakastoremitervotage | Vee 00 [Gate-Emitervatage iY ees fide le Continuous eee Collector current Ic pulse ims 300 A ee Lunciontcperwe SS POY [Storage temperaure St |i OY Isolation voltage”? ee a (*1) All terminals should be connected tcgether when isolation test will be done. (*2) Recommendable Value : 2.5~3.5 Nn (M5) s3258 Collector current LEEE2 | [GateEnilter leakage curent | ices vce OV, Vee reov [|| 200 | na ef iBe (Collector-Emitter Vega {VGE «15 V [Tien Neos 600-V po poss 2] vo meV et Turvaitine [tof JAo= 12 ot es] pews er [pore fas Forward on voltage VFO IFS 100 A [T= 2c{ | 26 [33] Vv Tis sep feat \\Reeccrecoeyine w= oA SO | 5. Thermal resistance characteristics ee” Fee} | Tar ow [Contact Thermal resistance FING? [with Thermal Compound” |__| 005 | * This is the value which is defined moun‘ing on the additiona! cooling fin with thermal compound. . . 2 4 Ly Fuji Electric Co,Ltd. g| MSSF 4848 Ye i H04-004-03

Cc vrvrvrv—“mvrcc I 6. Indication on module | Lot No. for Fuji | ins SPB ius iso 07 ' ain Sere Fit tT AT I | ee CE A | Lg oe Place of manufucturing(code) _/ \\ Lot No.(FOUR DIGITS) SAP No.(FIVE DIGITS) 7. Applicable category | This specification is applied to IGBT Module named 6MBI100S-120-01. 8. Storage and transportation notes . The module should be stored at a standard temperature of 5 to 35% and humidity of 45 to 75% . . Store modules in a place with few temperature changes in order to avoid 3B é3 condensation on the module surface. gEe$ dgige 23238 . Avoid exposure to corrosive gases and dust. ppg 25 ges . Avoid excessive external force on tre module. a322 . Store modules with unprocessed terminals. are . Do not drop or otherwise shock the modules when tranporting. 2sgseg . Please connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. 9. Definitions of switching time R 0% nn _— ov ov a t toe i tre i a 10 toe io wef ec te —, fe tort ton . . 2 sy Fuji Electric Co,Ltd. g| MS5F 4848 3 4 En H04-004-03

Celleetor current vs. Sollestor-biitter voltage Collector current vs. Collector’ Emitter voltage 50 i Se ry.) "0 Tie EC (typ.) decade ane | FLL cae a se i) a ' y 2 | | top. Lf p— 2 io} , ~ tf b+ z ' \\ oo z | | A 2 a — £10 +. ZO : t ; 5 y : | : | é ; | : | j ot S sp --— i An a an ~— os - i by TI i i 1 ] J \\ : ! | aw | T T ° o 0 1 2 3 1 3 ° 1 2 7 4 3 Collector - Enitter voltage ve of ¥) Collector — Ewitter voltage we (vi Collector current vs. Collector-Gmitter voltage Collector-Emitter voltage ys. Gate-Emitter voltage 250 YOER-L5V (typ.) ‘o Tjs 2c (typ. T T i | i | be225 2 i : y ~ | | fesae 2 | 1 | . | 1 | 2Py oe 2 ge pL. ff A eh | ff 23835 2 ' : | i 2 | ' Seee5 2 \\ ‘ : | j | ase > | | | : z i H 23225 s : i Fa 4 | ey elute 3B wp a ff a ne re we 2335 | 1 ! 2 Tes Si ggehS | i | ; | i esse 9 1 2 2 4 5 Ey 10 i 29 28 Collector - Faitter voltage ye fd Gate - Emitter voltage we CVT Capacitance vs. Collector~Emitter voltage (typ. Dynamic Gate charge (typ. YGE=OV, f= IMilz, Tj= 25°C Vee=600V, le=100A, T= 25°C 000 1009 % | pot | | Pot ot od | . t | a peep | | | Londen - ee ee z 1 | 2 ¢ ; I i I Fy j | ~ $0 em | | ¢ : | ! on ee ee Aes i | po : a, 3 | | | | = sgl oe : fo} | : | 5 Fy i | + | an 3 200} —f— 7 5: 2 10 4oAd 2 @ 3 | i i Core 3 i H t Cres, o Ey 10 15 ra) 28 0 6 . 200 400 600 800 1000 Collector - Gmitter voltage we (4) Gate charge : 3 {me} 7 1 - . 2| 6 Fuji Electric Co.Ltd. 3 MSS5F 4848 % co z H04-004-03

[a _ Switching time vs. Collector current (ep. } Switching time vs. Collector current (typ.) Hec-SN0¥, W5ESE 1S¥, Pye 120, T= AC Veur60UV, VGEZS 15¥, Rg= 12Q , Ti= 125C | | | . ‘ ! a l i i PL oe S i a s = i i jm : | g \\ | u ¢ | j | 3 t oo g a | i 5 i ; s t | : & i g i | i | : P | | ¢ w i i | 2 ! i i 5 7 i | a a ce a a) ee z \\ ta zt i | 4

50 Sn at an

y io 1 i ray Q ca 100 vm 700 Collector current je [AG Collector current : Ie [A] Switching Lime vs. Gate resistance (typ. ) Switching luss vs. Collector current (typ.) Vee=0V, Te=!00A, VES 18¥, Tie 275 Veo=500¥, VER 15¥, R122 sou0 _ T Jenwase 9 Bees 2 i i te 2” TT 2BS Eo Bt fy gy ey 1 . eoutasic > geass 2 i j 2s - i. g2228 ! : | < 52225 € - ‘ ¢ | Eor(125e £2i58 z f g Szgei | os | | eG ee 26520 oe 3 Ze exetast > pices 3 SE eee ne : i 1 zasa3 ° i * | | atest 30 | ean aorerere see 9 2885 10 30 Ao 200 9 0 190 150 200 Gate resistance me fa] Collector current Te (al Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area Veo=G0¥, To=1004, VOE=+ 15¥, Tjs 15'C SVGE=15V, -YGES 16V, Rez 12Q, TjS 125 | bs aan z i $ | 200 T + “ | / = \\ i | : | : || “ , | + sof 4 ro 1 H | i pn ee ey 2 | : i TT z g E | i a | | 3 100 jot —| Bwf fd E ; | 4 | : ‘ [> at = sy — f+ a 0 0 ra 30 itn 30 rT er ee er eC T) Gate resistance : Re [Q J Collector - Emitter voltage : WE [¥ } g| 7 i Fuji Electric Co,Ltd. 3) MSS5F 4848 Ae El cI H04-004-03

| ' i ~ | i } ae : ] ; = ino oe ff ts | i 1 ca . i i be i | i z ! \\ gE i j i "6 1 2 3 4 ary sc 100 450, 200 Foraard on woitage we 04? Forward current iF fad . : g| ay ES Fuji Electric Co.Ltd. g| MS5F 4848 vA a= HO4-004-03