6MBI100S-120 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Compact package
  • P .C.board mount
  • Low VCE (sat)

Applications

  • Inverter for motor drive
  • AC and DC servo drive amplifier
  • Uninterruptible power supply
  • Industrial machines, such as welding machines Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector Continuous Tc=25°C IC current Tc=80°C 1ms Tc=25°C IC pulse Tc=80°C -IC 1ms -IC pulse Max. power dissipation (1 device) PC Operating temperature Tj Storage temperature Tstg Isolation voltage Vis Screw torque Mounting *1 Rating 1200 ±20 150 100 300 200 100 200 700 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W V N·m Item Symbol Characteristics Conditions Unit Min. Typ. Max. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time T urn-off time Diode forward on voltage Reverse recovery time I CES IGES VGE(th) VCE(sat) C ies C oes C res ton tr tr(i) toff tf VF trr – – 1.0 – – 0.2 5.5 7.2 8.5 – 2.3 2.6 – 2.8 – – 12000 – – 2500 – – 2200 – – 0.35 1.2 – 0.25 0.6 – 0.1 – – 0.45 1.0 – 0.08 0.3 – 2.5 3.3 – 2.0 – – – 0.35 VGE =0V, VCE =1200V VCE =0V , VGE =±20V VCE =20V , IC =100mA Tj=25°C VGE =15V , IC =100A Tj=125°C V GE =0V VCE =10V f=1MHz V CC =600V IC =100A VGE =±15V R G =12W Tj=25°C IF=100A, VGE =0V Tj=125°C I F=100A mA µA V V pF µs V µs Electrical characteristics (Tj=25°C unless otherwise specified) Thermal resistance characteristics Item Symbol Characteristics Conditions Unit Min. Typ. Max. Rth(j-c) Thermal resistance Rth(j-c) Rth(c-f)* – – 0.18 – – 0.36 – 0.05 – IGBT FWD the base to cooling fin °C/W °C/W °C/W *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic *1 : Recommendable value : 2.5 to 3.5 N·m (M5) 21(P) 20(N) 1(Gu) 2(Eu) 3(Gx) 5(Gv) 6(Ev) 19(U) 7(Gy) 17(V) 15(W) 9(Gw) 11(Gz) 10(Ew) 4(Ex) 8(Ey) 12(Ez) 13(P) 14(N)

12V15VVGE= 20V Collector current vs. Collector-Emitter voltage Tj= 25 o C (typ.) Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ] 012345 100 150 200 250 10V 12V15V VGE= 20V Collector current vs. Collector-Emitter voltage Tj= 125 o C (typ.) Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 012345 100 150 200 250 Tj= 25 o C Tj= 125 o C Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 5 1 01 52 02 5 Ic= 50A Ic= 100A Ic= 200A Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 o C (typ.) Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] 0 5 10 15 20 25 30 35 500 1000 10000 50000 Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 o C Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] Coes Cres Cies 0 200 400 600 800 1000 200 400 600 800 1000 Dynamic Gate charge (typ.) Vcc=600V, Ic=100A, Tj= 25 o C Gate charge : Qg [ nC ] Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

Vcc=600V,VGE= ±15V, Rg=12W ,Tj=125oCVcc=600V,VGE= ±15V, Rg=12W ,Tj=25oC +V GE =15V,-VGE< 15V, Rg>12W ,Tj<125oC= ==Vcc=600V,Ic=100A,VGE= ±15V ,Tj=125oC Vcc=600V,Ic=100A,VGE= ±15V,Tj=25oC Vcc=600V,VGE= ±15V, Rg=12W ,Tj=125oC 0 50 100 150 200 100 500 1000 ton tr toff tf Switching time vs. Collector current (typ.) Switching time : ton, tr, toff, tf [ nsec ] Collector current : Ic [ A ] 0 50 100 150 200 100 500 1000 tf tr ton toff Switching time vs. Collector current (typ.) Collector current : Ic [ A ] Switching time : ton, tr, toff, tf [ nsec ] 10 50 100 200 100 500 1000 5000 toff ton tr Switching time vs. Gate resistance (typ.) Gate resistance : Rg [ W ] Switching time : ton, tr, toff, tf [ nsec ] 0 50 100 150 200 Err(25 o Eoff(25 o Eon(25 o Err(125 o Eoff(125 o Eon(125 o Switching loss vs. Collector current (typ.) Switching loss : Eon, Eoff, Err [ mJ/pulse ] Collector current : Ic [ A ] 10 50 100 300 Switching loss vs. Gate resistance (typ.) Switching loss : Eon, Eoff, Err [ mJ/pulse ] Gate resistance : Rg [ W ] Eon Err Eoff 0 200 400 600 800 1000 1200 1400 100 150 200 250 Reverse bias safe operating area Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ]

Vcc=600V,VGE= ±15V, Rg=12W ,Tj=25oC 1211987654321 21 20 19 18 17 16 15 1413 122–1 110–0.3 94.5–0.3 99.6–0.3 13.09 19.05 19.05 15.24 15.24 15.24 118.11 15.2415 15.24 19.05 19.05 8-R2.25–0.3 4-ø5.5–0.3 62–1 58.42 50–0.3 57.5–0.3 39.9–0.3 19.05 3.81 3.81 3.81 11.67 4.06 1.15–0.2 ø2.5–0.1 ø2.1–0.1 20.5–1 17–1 3.5–0.5 2.5–0.3 1.5–0.3 6.5–0.5 1–0.2 0.8–0.2 1.5 Section A-A A A ø0.4 11.5 +0.5 11.5 +0.5 Shows theory dimensions M626 Outline Drawings, mm 01234 100 150 200 250 Tj=25 o CTj=125 o C Forward current vs. Forward on voltage (typ.) Forward current : IF [ A ] Forward on voltage : VF [ V ] 0 50 100 150 200 100 300 Irr(125 o Irr(25 o trr(25 o trr(125 o Reverse recovery characteristics (typ.) Forward current : IF [ A ] Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 0.001 0.01 0.1 1 0.01 0.1 Transient thermal resistance Thermal resistanse : Rth(j-c) [ o C/W ] Pulse width : Pw [ sec ] FWD IGBT