6MBI100S-060 FUJI
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Fuji Electric Co.,Ltd. Matsumoto Factory SPECIFICATION Device Name : Type Name : Spec. No. : IGBT Module 6MBI100S-060 MS5F 5327 13MS5F5327 Jan. 27 ’03 Y.Kobayashi T.Miyasaka K.Yamada T.FujihiraJan. 27 ’03
R e v i s e d R e c o r d s Date Classi- fication Ind. Content Applied date Drawn Checked Approved enactment Issued date MS5F5327 13 Jan.- 27 - ’03 T.FujihiraK.Yamada T.Miyasaka
- Equivalent circuit 1. Outline Drawing ( Unit : mm ) 21(P) 20(N) 3(Gx) 2(Eu) 1(Gu) 19(U) 17(V) 15(W) 4(Ex) 5(Gv) 6(Ev) 7(Gy) 8(Ey) 11(Gz) 10(Ew) 9(Gw) 12(Ez) 14(N) 13(P)
- Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified ） Items Symbols Conditions Maximum Ratings Units Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES +-20 V Ic Continuous 100 Collector current Ic pulse 1ms 200 A -Ic 100 -Ic pulse 1ms 200 Collector Power Dissipation Pc 1 device 400 W Junction temperature Tj 150 C Storage temperature Tstg -40~ +125 C Isolation voltage(*1) Viso AC : 1min. 2500 V Mounting Screw Torque (*2) 3.5 Nm (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : 2.5~3.5 Nm (M5) 4. Electrical characteristics ( at Tj= 25C unless otherwise specified) Characteristics Items Symbols Conditions min. typ. Max. Units Zero gate voltage Collector current ICES VGE = 0 V, VCE = 600 V － － 1.0 mA Gate-Emitter leakage current IGES VCE = 0 V, VGE = +-20 V － － 200 nA Gate-Emitter threshold voltage VGE(th) VCE = 20 V, Ic = 100 mA 5.5 7.8 8.5 V Collector-Emitter VCE(sat) VGE = 15 V Tj = 25 C － 2.15 2.6 V saturation voltage Ic = 100 A Tj = 125 C － 2.3 － Input capacitance Cies VGE = 0 V － 10000 － Output capacitance Coes VCE = 10 V － 1600 － pF Reverse transfer capacitance Cres f = 1 MHz － 1100 － ton Vcc = 300 V － 0.45 1.2 Turn-on time tr Ic = 100 A － 0.25 0.6 tr(i) VGE = +-15 V － 0.08 － us Turn-off time toff RG = 24 ohm － 0.40 1.0 tf － 0.05 0.35 Forward on voltage VF IF = 100 A Tj = 25 C － 1.95 2.7 V Tj = 125 C － 1.8 － Reverse recovery time trr IF = 100 A － － 0.3 us 5. Thermal resistance characteristics Characteristics Items Symbols Conditions min. typ. Max. Units Thermal resistance Rth(j-c) IGBT － － 0.31 (1 device) FWD － － 0.70 C/W Contact Thermal resistance Rth(c-f) with Thermal Compound (*) － 0.05 － * This is the value which is defined mounting on the additional cooling fin with thermal compound.
L Vcc Ic VCE RG VGE VGE VCE Ic0V 10% 90% 10% 10% 90% 90% Ic VCE ont rt r(i)t offt ft rrI rrt 7. Applicable category This specification is applied to IGBT Module named ６ＭＢＩ１００Ｓ－０６０． 8. Storage and transportation notes ・ The module should be stored at a standard temperature of 5 to 35℃ and humidity of 45 to 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ・ Avoid exposure to corrosive gases and dust. ・ Avoid excessive external force on the module. ・ Store modules with unprocessed terminals. ・ Do not drop or otherwise shock the modules when tranporting. 9. Definitions of switching time 6MBI100S-060 100A 600V Lot No. Place of manufucturing 6. Indication on module 10. Packing and Labeling Packing box Display Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box Material : Cardboad * Each modules are packed with electrical static protection.
- Reliability test results Reliability Test Items Test cate- gories Test items Test methods and conditions Reference norms EIAJ ED-4701 Number of sample Accept- ance number
1 Terminal Strength Pull force : 20N A - 111 5 ( 1 : 0 )
(Pull test) Test time : 10±1 sec. Method 1 2 Mounting Strength Screw torque : 2.5 ~ 3.5 N･m (M5) A - 112 5 ( 1 : 0 ) Test time : 10±1 sec. Method 2
3 Vibration Range of frequency : 10 ~ 500Hz A - 121 5 ( 1 : 0 )
Sweeping time : 15 min. Acceleration : 10G Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction)
4 Shock Maximum acceleration : 1000G A - 122 5 ( 1 : 0 )
Pulse width : 0.5msec. Direction : Each X,Y,Z axis Test time : 3 times/direction 5 Solderabitlity Solder temp. : 235±5 ℃ A - 131 5 ( 1 : 0 ) Immersion time : 5±1sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. 6 Resistance to Solder temp. : 260±5 ℃ A - 132 5 ( 1 : 0 ) Soldering Heat Immersion time : 10±1sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. 1 High Temperature Storage temp. : 125±5 ℃ B - 111 5 ( 1 : 0 ) Storage Test duration : 1000hr. 2 Low Temperature Storage temp. : -40±5 ℃ B - 112 5 ( 1 : 0 ) Storage Test duration : 1000hr. 3 Temperature Storage temp. : 85±3 ℃ B - 121 5 ( 1 : 0 ) Humidity Relative humidity : 85±5% Storage Test duration : 1000hr. 4 Unsaturated Test temp. : 121 ℃ B - 123 5 ( 1 : 0 ) Pressure Cooker Atmospheric pressure : 2.03×105 Pa (Reference value) Test duration : 20hr.
5 Temperature +3 B - 131 5 ( 1 : 0 )
Cycle Test temp. : Low temp. -40 -5 ℃ High temp. 125 -5 ℃ RT 5 ~ 35 ℃ Dwell time : High ~ RT ~ Low ~ RT Number of cycles : 100 cycles
6 Thermal Shock +0 B - 141 5 ( 1 : 0 )
Test temp. : High temp. 100 -5 ℃ Low temp. 0 -0 ℃ Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles Mechanical TestsEnvironment Tests
Test items Test methods and conditions Reference norms EIAJ ED-4701 Number of sample Accept- ance number
1 High temperature +0 D - 313 5 ( 1 : 0 )
Reverse Bias Test temp. : Ta = 125 -5 ℃ (Tj ≦ 150 ℃) Bias Voltage : VC = 0.8×VCES Bias Method : Applied DC voltage to C-E VGE = 0V Test duration : 1000hr.
2 High temperature +0 D - 323 5 ( 1 : 0 )
Reverse Bias Test temp. : Ta = 125 -5 ℃ (Tj ≦ 150 ℃) Bias Voltage : VC = VGE = +20V or -20V Bias Method : Applied DC voltage to G-E VCE = 0V Test duration : 1000hr. 3 Intermitted ON time : 2 sec. D - 322 5 ( 1 : 0 ) Operating Life OFF time : 18 sec. (Power cycle) Test temp. : ' Tj=100±5 deg ( for IGBT ) Tj ≦ 150 ℃, Ta=25±5 ℃ Number of cycles : 15000 cycles Endurance Tests Failure Criteria Item Characteristic Symbol Failure criteria Unit Note Lower limit Upper limit Electrical Leakage current ICES - USL×2 mA characteristic ±IGES - USL×2 PA Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA Saturation voltage VCE(sat) - USL×1.2 V Forward voltage VF - USL×1.2 V Thermal IGBT ' VGE - USL×1.2 mV resistance or ' VCE FWD ' VF - USL×1.2 mV Isolation voltage Viso Broken insulation - Visual Visual inspection inspection Peeling - The visual sample - Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.
1 Terminal Strength A - 111 5 0
(Pull test) Method 1
2 Mounting Strength A - 112 5 0
3 Vibration A - 121 5 0
4 Shock A - 122 5 0
5 Solderabitlity A - 131 5 0
6 Resistance to Soldering Heat A - 132 5 0
1 High Temperature Storage B - 111 5 0
2 Low Temperature Storage B - 112 5 0
3 Temperature Humidity B - 121 5 0
4 Unsaturated B - 123 5 0
5 Temperature Cycle B - 131 5 0
6 Thermal Shock B - 141 5 0
1 High temperature Reverse Bias D - 313 5 0
2 High temperature Reverse Bias D - 323 5 0
( for gate )
3 Intermitted Operating Life D - 322 5 0
(Power cycling) ( for IGBT ) Mechanical TestsEnvironment TestsEndurance Tests
12V15VVGE= 20V [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25℃ (typ.) Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ] 0 1 2 3 4 5 100 150 200 250 10V 12V15VVGE= 20V [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125℃ (typ.) Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 0 1 2 3 4 100 150 200 250 Tj= 25℃ Tj= 125℃ [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 5 10 15 20 25 Ic= 50A Ic=100A Ic=200A [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25℃ (typ.) Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] 0 5 10 15 20 25 30 35 500 1000 5000 10000 50000 [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25℃ Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] Coes Cres Cies 0 100 200 300 400 500 600 100 200 300 400 500 [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=100A, Tj= 25℃ Gate charge : Qg [ nC ] Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=24Ω, Tj= 25℃ Switching time : ton, tr, toff, tf [ nsec ] Collector current : Ic [ A ] 0 50 100 150 200 100 1000 tf tr ton toff [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg= 24Ω, Tj= 125℃ Collector current : Ic [ A ] Switching time : ton, tr, toff, tf [ nsec ] 10 100 300 100 1000 5000 toff ton tr tf [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=±15V, Tj= 25℃ Gate resistance : Rg [ Ω ] Switching time : ton, tr, toff, tf [ nsec ] 0 50 100 150 200 Err（25℃） Eoff（25℃） Eon（25℃） Err（125℃） Eoff（125℃） Eon（125℃） [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=24Ω Switching loss : Eon, Eoff, Err [ mJ/pulse ] Collector current : Ic [ A ] 10 100 300 [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=±15V, Tj= 125℃ Switching loss : Eon, Eoff, Err [ mJ/pulse ] Gate resistance : Rg [ Ω ] Eon Err Eoff 0 200 400 600 800 100 150 200 250 [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE≦15V, Rg≧24Ω, Tj≦125℃ Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ]
Tj=25℃ Tj=125℃ [ Inverter ] Forward current vs. Forward on voltage (typ.) Forward current : IF [ A ] Forward on voltage : VF [ V ] 0 50 100 150 200 100 300 Irr（125℃） Irr（25℃） trr（25℃） trr（125℃） [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=±15V, Rg=24Ω Forward current : IF [ A ] Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 0.001 0.01 0.1 1 0.01 0.1 Transient thermal resistance Thermal resistanse : Rth(j-c) [ ℃/W ] Pulse width : Pw [ sec ] FWD IGBT
- This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。 絶対最大定格を超えて使用すると、素子が破壊する場合があります。 - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. 万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ 又はブレーカーを必ず付けて２次破壊を防いでください。 - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. 製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。 製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。 - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は 致しかねます。 - Use this product within the power cycle curve (Technical Rep.No. : MT6M3947) 本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT6M3947) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. 主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合 があります。 - According to the outline drawing, select proper length of screw for main terminal. Longer screws may break the case. 本製品に使用する主端子用のネジの長さは、外形図に従い正しく選定下さい。 ネジが長いとケースが破損する場合があります。 - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown and this may lead to a critical accident. 冷却フィンはネジ取り付け位置間で平坦度を100mmで100um以下、表面の粗さは10um以下にして下さい。 誤った取り扱 いをすると絶縁破壊を起こし、重大事故に発展する場合があります。 - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。 RBSOAの範囲を超えて使用すると素子が破壊する可能性があります。 - If excessive static electricity is applied to the control terminals, the devices can be broken. Implement some countermeasures against static electricity. 制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。 取り扱い時は静電気対策を実施して下さい。
- Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. 富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、 誤動作する場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災 等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計 など安全確保のための手段を講じて下さい。 - The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書 によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。 - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. 本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを 目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力 制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に 満足することをご確認の上、ご利用下さい。 If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.