6LN04MH SANYO

Document overview

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Technical content

Features

  • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 60 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D 200 mA Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 800 mA Allowable Power Dissipation P D Mounted on a ceramic board (900mm25 0.8mm) 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 60 V Zero-Gate Voltage Drain Current I DSS VDS =60V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =100µA 0.4 1.3 V Forward Transfer Admittance yfs VDS =10V, ID =100mA 280 480 mS R DS (on)1 I D =100mA, VGS =4V 2.2 2.9 Ω Static Drain-to-Source On-State ResistanceR DS (on)2 I D =50mA, VGS =2.5V 2.4 3.4 Ω R DS (on)3 I D =10mA, VGS =1.5V 3.5 7.0 Ω Input Capacitance Ciss V DS =20V, f=1MHz 26 pF Output Capacitance Coss V DS =20V, f=1MHz 5.9 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 3.2 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 18.5 ns Rise Time t r See specified Test Circuit. 26 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 146 ns Fall Time t f See specified Test Circuit. 69 ns Marking : FA Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71006PE MS IM TB-00002393 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. SANYO Semiconductors DATA SHEET 6LN04MH N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

No. A0458-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =30V, VGS =4V, ID =200mA 1.0 nC Gate-to-Source Charge Qgs V DS =30V, VGS =4V, ID =200mA 0.2 nC Gate-to-Drain “Miller” Charge Qgd V DS =30V, VGS =4V, ID =200mA 0.2 nC Diode Forward Voltage V SD IS=200mA, VGS =0V 0.83 1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7019A-003 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 0.250.250.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 0 to 0.02 PW=10 µs D.C.≤1% P. G 50Ω G S D ID =200mA R L=150Ω VDD =30V VOUT 6LN04MH VIN VIN R g R g=1.2kΩ 300 100 150 200 250 140 100 180 160 120 200 IT11274 IT11275 IT11277 02468 1 0 IT11276 Ta= --25 Ta=25°C V GS =1.0V V DS =10V 8.0V 2.0V 1.5V - -60 - -40 - -20 0 20 40 60 80 100 120 140 160 ID=50mA, V GS=2.5VID=10mA, V GS=1.5V ID=100mA, V GS=4.0V 4.0V ID =10mA 100mA 2.5V 6.0V 50mA ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS R DS (on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Ambient Temperature, Ta -- °C Drain Current, ID -- mA

No. A0458-3/4 IT11282 0.5 1.0 3.0 2.0 1.5 3.5 2.5 4.0 IT11281 100 1000 IT11279 IT11278 0.001 0.0123 5 2 72 3 5 7 0.135 2 7 0 1 03 05 0 15 35 5520 4052 5 4 5 6 0 1.0 IT11280 0.01 0.1 0.001 223 5 7 1.0 235 7 100.1 td(on) td(off) tf tr V DD =30V V GS =4V Ciss Coss Crss V DS =30V ID =200mA ≤10µsIDP =800mA ID =200mA Operation in this area is limited by RDS (on). 100ms 100µs10ms DC operation (Ta=25 °C) 0.1 1.0 1.023 5 7 2 1035 7 2 10035 7 100 V DS =10V 25°CTa=75 20 40 0.1 0.2 0.3 0.4 0.5 0.7 0.6 60 80 100 120 140 160 IT11283 --25°C f=1MHz 1ms3 1.0 1000 35 7 100 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Mounted on a ceramic board (900mm 250.8mm) VGS -- Qg SW Time -- ID Ciss, Coss, Crss -- VDS yfs -- ID Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- mA Forward Transfer Admittance, yfs -- mS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ta=25°C Single pulse Mounted on a ceramic board (900mm 25 0.8mm) IS -- VSD Diode Forward V oltage, VSD -- V Source Current, IS -- mA IT11322 0.1 1.0 100 V GS =0V --25 Ta=75 1000

No. A0458-4/4 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. PS Note on usage : Since the 6LN04MH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice.