6HP04MH

6HP04MH SANYO

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• 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -120 mA Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -480 mA Allowable Power Dissipation P D Mounted on a ceramic board (900mm25 0.8mm) 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0V - -60 V Zero-Gate Voltage Drain Current I DSS VDS =- -60V, VGS =0V - -1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -100µA - -1.2 - -2.6 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -60mA 100 180 mS Static Drain-to-Source On-State Resistance R DS (on)1 I D =- -60mA, VGS =- -10V 5.1 6.6 Ω R DS (on)2 I D =- -30mA, VGS =- -4V 6.8 9.6 Ω Input Capacitance Ciss V DS =- -20V, f=1MHz 13.5 pF Output Capacitance Coss V DS =- -20V, f=1MHz 3.4 pF Reverse Transfer Capacitance Crss V DS =- -20V, f=1MHz 1.3 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 36.5 ns Rise Time t r See specified Test Circuit. 38.0 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 455 ns Fall Time t f See specified Test Circuit. 160 ns Marking : QB Continued on next page. SANYO Semiconductors DATA SHEET TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.

No. A0368-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =- -30V, VGS =- -10V, ID =- -120mA 1.6 nC Gate-to-Source Charge Qgs V DS =- -30V, VGS =- -10V, ID =- -120mA 0.4 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -30V, VGS =- -10V, ID =- -120mA 0.16 nC Diode Forward Voltage V SD IS=- -120mA, VGS =0V - -0.85 - -1.2 V Package Dimensions Switching Time Test Circuit unit : mm 7019A-003 PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --60mA R L=500Ω VDD = --30V VOUT 6HP04MH VIN --10V VIN R g R g=5kΩ 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 0.250.250.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 0 to 0.02 R DS (on) -- VGS Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Ambient Temperature, Ta -- °C R DS (on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) -- Ω ID -- VGS Drain Current, ID -- mA Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- mA --20 --40 --60 --80 --120 --0.4 --100 V GS = --2.5V --4.0V --15.0V --3.0V --40 --20 --0.5 --60 --80 --1.0 --100 --120 V DS = --10V IT10865 IT10866 --25 °CTa=75 --5.0V --10.0V --60 --40 --20 0 20 40 60 80 100 120 140 160 ID= --30mA, V GS = --4V ID= --60mA, V GS= --10V IT10868 --2 --4 --6 --8 Ta=25°C ID = --30mA --60mA IT10867 --8.0V

No. A0368-3/4 0.2 --1 --2 0.4 --3 --4 0.6 --5 --6 --7 0.8 --8 1.0 --9 1.2 --10 1.4 1.6 V DS = --30V ID = --120mA IT10873 0.1 0.3 40 60 0.6 0.2 0.5 0.4 0.7 140100 120 160 IT10875 --0.1 --0.01 IT10874 --0.1 23 5 7 --1.0 23 5 7 --10023 5 7 --10 IDP = --480mA Operation in this area is limited by RDS (on). 1ms 10ms 100ms DC operation (Ta=25 °C) ID = --120mA Ambient Temperature, Ta -- °C Mounted on a ceramic board (900mm 250.8mm) PD -- Ta Allowable Power Dissipation, PD -- W A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ta=25°C Single pulse Mounted on a ceramic board (900mm25 0.8mm) Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V IS -- VSD Source Current, IS -- mA Diode Forward V oltage, VSD -- V Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA yfs -- ID Forward Transfer Admittance, yfs -- mS SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A 1.0 --15--5 --20--10 --25 --30 f=1MHz IT10872 Ciss Coss Crss --0.01 100 --0.122 35 7 35 7 1000 IT10871 td(on)tr V DD = --30V V GS = --10V tf td(off) --0.1 --1.0 --10 --100 --1000 V GS =0V --1.0 --1023 5 7 23 5 7 2 --10035 7 100 V DS = --10V IT10869 IT10870 Ta= --25 --25 Ta=75 25°C 75°C PW ≤10µs

No. A0368-4/4PS Note on usage : Since the 6HP04MH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2006. Specifications and information herein are subject to change without notice.