6AM13 HITACHI

Document overview

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Technical content

Features

  • Low on-resistance N-channel: RDS(on) £ 0.075 , VGS = 10 V, ID = 5 A P-channel: RDS(on) £ 0.12 , VGS = –10 V, ID = –5 A
  • Capable of 4 V gate drive
  • Low drive current
  • High speed switching
  • High density mounting
  • Suitable for H-bridged motor driver

2, 8, 9 3, 7, 10. 4, 6, 11. 5, 12. 1 2 3 4 5 6 7 8 9 1110 S S G G G G S 4 G Pch Nch 2 G D 10D 7D 3 N-ch Source N-ch Gate N-ch Drain P-ch Drain P-ch Gate P-ch Source Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol Nch Pch Unit Drain to source voltage V DSS 60 –60 V Gate to source voltage V GSS ±20 ±20 V Drain current I D 10 –10 A Drain peak current I D(pulse)*1 40 –40 A Body to drain diode reverse drain current IDR 10 –10 A Channel dissipation Pch (Tc = 25°C)* 2 42 W Channel dissipation Pch* 2 4.8 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW £ 10 µs, duty cycle £ 1% 2. 6 devices operation

Electrical Characteristics (Ta = 25°C) (1 Unit) N channel P channel Item Symbol Min Typ Max Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 60 — — –60 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 — — ±10 µA V GS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 250 — — –250 µA V DS = 50 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 –1.0 — –2.0 V I D = 1 mA, VDS = 10 V Static drain to source RDS(on) — 0.06 0.075 — 0.09 0.12 W ID = 5 A, VGS = 10 V*1 on state resistance — 0.08 0.11 — 0.12 0.18 W ID = 5 A, VGS = 4 V*1 Forward transfer admittance |yfs| 6 9.5 — 5 8 — S I D = 5 A, VDS = 10 V*1 Input capacitance Ciss — 860 — — 1400 — pF V DS = 10 V, VGS = 0, Output capacitance Coss — 450 — — 720 — pF f = 1 MHz Reverse transfer capacitance Crss — 140 — — 220 — pF Turn-on delay time t d(on) —1 0——1 5—n sI D = 5 A, VGS = 10 V, Rise time t r —5 0——1 0 0 —n sR L = 6 W Turn-off delay time td(off) — 180 — — 250 — ns Fall time t f — 110 — — 160 — ns Body to drain diode forward voltage VDF — 1.0 — — –1.0 — V I F = 10 A, VGS = 0 Body to drain diode reverse recovery time trr — 120 — — 200 — ns I F = 10 A, VGS = 0, diF/dt = 50 A/µs Note: 1. Pulse Test Polarity of test conditions for P channel device is reversed.

Ambient Temperature Ta (°C) Channel Dissipation Pch (W)

6 Device Operation

Condition : Channel dissipation of each die is identical

4 Device Operation

2 Device Operation

1 Device Operation

Maximum Channel Dissipation Curve 60 0 25 50 75 100 125 150 Case Temperature Tc (°C) Channel Dissipation Pch (W) Condition : Channel dissipation of each die is identical Maximum Channel Dissipation Curve – 50 – 30 – 10 – 3 – 1 – 0.3 – 0.1 – 0.05 Drain to Source Voltage V (V)DS Drain Current I (A)D 1 msPW = 10 ms (1 shot) DC Operation (Tc = 25°C) Ta = 25°C Operation in this area is limited by R (on)DS 10 s µ100 s µ Maximum Safe Operation Area (P-Channel) –50 –8 –20 Drain to Source Voltage VDS (V) Typical Output Characteristics –40 –10 –4 –12 –160 –20 –30Drain Current ID (A) Pulse Test –5 V –4 V VGS = –3 V –8 V –6 V –10 V

–20 –2 –5 Gate to Source Voltage VGS (V) Drain Current ID (A) Typical Transfer Characteristics –16 –1 –3 –40 –12 VDS = –10 V Pulse Test TC = 25°C 75°C–25°C –2.0 –4 –10 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (V) –1.6 –0.4 –2 –6 –80 –0.8 –1.2 Drain to Source Saturation Voltage vs. Gate to Source Voltage ID = –2 A Pulse Test –5 A –10 A –15 A 0.5 –5 –50 Drain Current ID (A) Static Drain to Source on State Resistance R D S (on) (Ω ) 0.2 0.02 –2 –10 –20 0.01 0.05 0.1 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 0.005 –100 VGS = –4 V –10 V 0.25 40 160 Case Temperature TC (°C) Static Drain to Source on State Resistance R D S (on) (Ω ) 0.20 0.05 0 80 120 0.10 0.15 Static Drain to Source on State Resistance vs. Temperature Pulse Test –40 –10 A –2, –5 A VGS = –4 V –15 A

–1.0 –20 Drain Current ID (A) 1.0 –0.5 –2 –10–0.2 0.5 VDS = 10 V Pulse Test Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current 75°C –25°C TC = 25°C 500 –1.0 –20 Reverse Drain Current IDR (A) 200 –0.5 –2 –10–0.2 100 Reverse Recovery Time trr (ns) Body to Drain Diode Reverse Recovery Time di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 10,000 –20 –50 Drain to Source Voltage VDS (V) Capacitance C (pF) 100 –10 –30 –40 1,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Crss Coss Ciss 40 100 Gate Charge Qg (nc) Drain to Source Voltage VDS (V) Dynamic Input Characteristics –20 –80 20 60 800 –60 –40 –16 –20 –12 Gate to Source Voltage VGS (V) –100 VDD = –50 V –25 V –10 V –10 V –25 V VDD = –50 V VDS ID = –15 A VGS

Drain Current ID (A) Switching Time t (ns) 200 100 –0.2 Switching Characteristics td (off) tf tr td (on) VGS = –10 V, VDD –30V PW = 2 µs, duty < 1% =.. –20 –0.8 –2.0 Source to Drain Voltage VSD (V) Reverse Drain Current IDR (A)–16 –0.4 –1.2 –1.6 –12 Reverse Drain Current vs. Source to Drain Voltage Pulse Test VGS = 0,5 V –5 V –10 V

0.3 0.1 0.05 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V (V)DS Drain Current I (A)D 1 msPW = 10 ms (1 shot) DC Operation (Tc = 25°C) Ta = 25°C Operation in this area is limited by R (on)DS 10 s µ100 s µ Maximum Safe Operation Area (N-Channel) Typical Output Characteristics Drain to Source Voltage VDS (V) 842 10 Drain Current ID (A) VGS = 2.5 V Pulse Test10 V 4 V 5 V 3.5 V 3.0 V Typical Transfer Characteristics Gate to Source Voltage VGS (V) 42105 Drain Current ID (A) TC = 25°C 75°C VDS = 10 V Pulse Test –25°C Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) 84201 0 0.8 1.2 1.6 2.0 0.4 Pulse Test ID = 5 A 20 A 10 A

Drain Current ID (A) 2052 100 0.02 0.05 0.1 0.2 0.5 0.01 0.005 Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance R DS (on) (Ω ) VGS = 4 V 10 V Pulse Test Case Temperature TC (°C) 120400 0.04 0.08 0.12 0.16 0.20 –40 160 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance R DS (on) (Ω ) ID = 10 A 5 A 20 A Pulse Test VGS = 4 V VGS = 10 V 10 A 5 A Forward Transfer Admittance vs. Drain Current 1.0 0.5 0.2 0.5 1.0 2 5 20 Drain Current ID (A) Forward Transfer Admittance yfs (S) TC = 25°C VDS = 10 V Pulse Test –25°C 75°C 1000 500 200 100 0.5 1.0 5 50 Reverse Drain Current IDR (A) 102 20 Body to Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test

Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 300 Capacitance C (pF) 01 0 2 0 50 Drain to Source Voltage VDS (V) 100 VGS = 0 f = 1MHz Ciss Coss Crss 100 08 2 4 32 Gate Charge Qg (nc) Dynamic Input Characteristics Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) ID = 15 A VDS VGS VDD = 50 V 10 V 25 V VDD = 50 V 25 V 10 V Switching Characteristics Switching Time t (ns) 500 200 100 0.2 0.5 1.0 2 5 20 Drain Current ID (A) td (off) tf tr td (on) VGS = 10 V VDD = 30 V PW = 2µs, duty < 1 % 0 0.4 1.2 1.6 2.0 Source to Drain Voltage VSD (V) 0.8 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) VGS = 0, – 5 V Pulse Test 10 V 15 V 5 V

(reference value) SP-12TA 6.1 g 31.3 24.4 – 0.1 16.4 – 0.3 +0.2 –0.3 3.8 3.2φ 2.2 – 0.2 0.55 +0.1 –0.06 5.0 – 0.2 2.0 – 0.1 10.0 – 0.32.7 3.2 3.0 123456789 1 0 1 1 1 2 As of January, 2001 Unit: mm

  1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Hitachi Asia Ltd. Hitachi Tower

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