65R190 KIA

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20A，650V N-CHANNELMOSFETKIA SEMICONDUCTORS 65R190KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description ThisPowerMOSFETisproducedusingKIAsemi\`sadvancedsuper-junctiontechnology.This advancedtechnologyhasbeenespeciallytailoredtominimizeconductionloss,providesuperiorswitching performance,andwithstandhighenergypulseintheavalancheandcommutationmode.Thesedevices arewellsuitedforAC/DCpowerconversioninswitchingmodeoperationforhigherefficiency. 2.Features n RDS(on)=0.16Ω@ VGS=10V n Low gate charge ( typical 70nC) n High ruggedness n Fast switching n 100% avalanche tested n Improved dv/dt capability 3. Pinconfiguration 1of6 Rev1.0JUN2015 Pin Function

1 Gate

2 Drain

3 Source

20A，650V N-CHANNELMOSFETKIA SEMICONDUCTORS 65R190KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDSS 650 V Gate-sourcevoltage VGSS +30 V Draincurrentcontinuous TC=25ºC ID 20* A TC=100ºC 10* A Draincurrentpulsed(note1) IDM 62* A Avalancheenergy Repetitive(note1) EAR 1 mJ Singlepulse(note2) EAS 485 mJ Avalancheenergy(note1) IAR 20 A Peakdioderecoverydv/dt(note3) dv/dt 4.5 V/ns Totalpowerdissipation TC=25 ºC PD 35 W derateabove25 ºC 0.3 W/ºC Operatingandstoragetemperaturerange TJ, TSTG -55~+150 ºC Maximum lead temperature for soldering purposes,1/8 〞fromcasefor5seconds TL 300 ºC *Draincurrentlimitedbymaximumjunctiontemperature 5. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-ambient RthJA 80 ºC/W Thermalresistance,case-to-sinktyp. RthJS - ºC/W Thermalresistance,Junction-case RthJC 3.6 ºC/W 2of6 Rev1.0JUN2015

20A，650V N-CHANNELMOSFETKIA SEMICONDUCTORS 65R190KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TC=25°C,unlessotherwisenoted) Parameter Symbol Conditions Min Typ Max Unit Offcharacteristics Drain-sourcebreakdownvoltageT J=25ºC BVDSS VGS=0V,ID=250μA 650 - - V Zerogatevoltagedraincurrent IDSS VDS=650V,V GS=0V - - 1 μA VDS=480V,T C=125ºC - - 10 μA Gate-bodyleakagecurrent Forward IGSS VGS=30V,VDS=0V - - 100 nA Reverse VGS=-30V,VDS=0V - - -100 nA Breakdownvoltagetemperaturecoefficient △BVDSS/△TJ ID=250μA,referenced C Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.5 - 4.5 V Staticdrain-sourceon-resistance RDS(on) VGS=10V,ID=5A - 0.16 0.19 Ω Forwardtransconductance gFS VDS=40V,ID=5A (note4) - 16 - S Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 1440 - pF Outputcapacitance Coss - 300 - pF Reversetransfercapacitance Crss - 10 - pF Switchingcharacteristics Turn-ondelaytime td(on) VDD=400V,ID=5A, RG=20Ω(note4,5) - 25 - ns Risetime tr - 55 - ns Turn-offdelaytime td(off) - 70 - ns Falltime tf - 40 - ns Totalgatecharge Qg VDS=480V,ID=10A, VGS=10V(note4,5) - 70 - nC Gate-sourcecharge Qgs - 7.8 - nC Gate-draincharge Qgd - 9 - nC Drain-sourcediodecharacteristicsandmaximumratings Drain-sourcediodeforwardvoltage VSD VGS=0V,ISD=4.9A - - 1.5 V Continuousdrain-sourcecurrent IS - - 20 A Pulseddrain-sourcecurrent ISM - - 60 A Reverserecoverytime trr VGS=0V,ISD=4.9A dlF/dt=100A/μs (note4) - 475 - ns Reverserecoverycharge Qrr - 5.8 - μC Note:1.repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.I AS=3.5A,V DD=50V,R G=25Ω,staringT J=25ºC 3.I SD<10A,di/dt<200A/μs,V DD<BVDSS,staringT J=25 ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperaturetypicalcharacteristics. 3of6 Rev1.0JUN2015

20A，650V N-CHANNELMOSFETKIA SEMICONDUCTORS 65R190KIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of6 Rev1.0JUN2015

20A，650V N-CHANNELMOSFETKIA SEMICONDUCTORS 65R190KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.0JUN2015

20A，650V N-CHANNELMOSFETKIA SEMICONDUCTORS 65R190KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.0JUN2015