65N06 KIA
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Technical content
65A,60V N-CHANNELMOSFETKIA SEMICONDUCTORS 65N06KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheseN-Channelenhancementmodepowerfieldeffecttransistorsareproducedusing KIA’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailored tominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulse intheavalancheandcommutationmode.Thesedevicesarewellsuitedforlowvoltageapplicationssuch asautomotive,DC/DCconverters,andhighefficiencyswitchingforpowermanagementinportableand batteryoperatedproducts. 2.Features n 65A,60V,R DS(on)=0.016 Ω @VGS=10V n Lowgatecharge(typical48nC) n LowCrss(typical32.5pF) n Fastswitching n 100%avalanchetested n Improveddv/dtcapability n 175º maximumjunctiontemperaturerating 3.Pinconfiguration 1of7 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
65A,60V N-CHANNELMOSFETKIA SEMICONDUCTORS 65N06KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4.Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Rating Units Drain-sourcevoltage VDSS 60 V Draincurrent Tc=25 ºC ID 65 A Tc=100 ºC 40 A Draincurrentpulsed (note1) IDM 260 A Gate-sourcevoltage VGSS ±20 V Singlepulsedavalancheenergy (note2) EAS 650 mJ Avalanchecurrent (note1) IAR 65 A Repetitiveavalancheenergy (note1) EAR 15.0 mJ Peakdioderecoverydv/dt (note3) dv/dt 7.0 V/ns Powerdissipation Tc=25 ºC PD 150 W derateabove25 ºC 1.00 W/ºC OperatingandStoragetemperaturerange TJ, TSTG -55~+175 ºC Maximumleadtemperatureforsoldering purposes,1/8’’ fromcasefor5seconds TL 300 ºC 5.Thermalcharacteristics Parameter Symbol Min Max Unit Thermalresistance,Junction-to-case RθJC 1.00 ºC/W Thermalresistance,case-to-sink RθCS 0.5 ºC/W Thermalresistance,Junction-to-ambient RθJA 62.5 ºC/W 2of7
65A,60V N-CHANNELMOSFETKIA SEMICONDUCTORS 65N06KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Unit Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 60 V Breakdownvoltagetemperature coefficient ΔBVDSS/ΔTJ ID=250μA, referencedto25 ºC 0.07 V/ºC Zerogatevoltagedraincurrent IDSS VDS=60V,V GS=0V 1 μA VDS=48V,T C=150ºC 10 μA Gate-bodyleakage current Forward IGSSF VGS=20V,VDS=0V 100 nA Reverse IGSSR VGS=-20V,VDS=0V -100 nA Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 4.0 V Staticdrain-sourceon-resistance RDS(on) VGS=10V,ID=39A 0.015 0.016 Ω Forwardtransconductance gFS VDS=25V,I D=32.5A(note4) 100 S Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V,f=1.0MHz 2000 pF Outputcapacitance Coss 450 pF Reversetransfercapacitance Crss 32.5 pF Switchingcharacteristics Turn-ondelaytime td(on) VDD=30V,ID=39A,RG=4.7Ω RD=0.77Ω,VGS=10V (note4,5) 12 ns Turn-onrisetime tr 33 ns Turn-offdelaytime td(off) 41 ns Turn-offfalltime tf 12 ns Totalgatecharge Qg VDS=30V,I D=39A,VGS=10V, (note4,5) 40 nC Gate-sourcecharge Qgs 8 nC Gate-draincharge Qgd 12 nC Drain-sourcediodecharacteristicsandmaximumrating Maximumcontinuousdrain-source diodeforwardcurrent IS 65 A Maximumpulseddrain-sourcediode forwardcurrent ISM 260 A Drain-sourcediodeforwardvoltage VSD VGS=0V,IS=65A 1.5 V Reverserecoverytime trr VGS=0V,IS=65A dIF/dt=100A/μs(note4) 60 ns Reverserecoverycharge Qrr 100 μC Note:1.repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.L=180μH,IAS=65A,VDD=25V,RG=25Ω,staringT J=25ºC 3.ISD<65A,di/dt<100A/μs,VDD<BVDSS,staringT J=25 ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperature 3of7
65A,60V N-CHANNELMOSFETKIA SEMICONDUCTORS 65N06KIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of7
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