65N06

65N06 NELLSEMI

Document overview

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Technical content

(63A, 55Volts) TO-220AB (6 )5N06A D They are designed as an extremely efficient and reliable device and has integral zener giving diodes ESD protection up to 2KV. They are intended for use in DC to DC convertors and general purpose switching applications. The Nell 65N06 is a three-terminal silicon device with current conduction capability of 63A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max. threshold voltage of 4 volts.

DESCRIPTION

Low reverse transfer capacitance (C = 170pF typical)RSS R = 18mΩ@V = 10V DS(ON) GS Ultra low gate charge(40nC typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature

FEATURES

I (A)D 63 V (V)DSS 60 0.018 @ V = 10VGS R (Ω)DS(ON) Q (nC) typ.G GDS 2TO-263 (D PAK) (6 )5N06H D G S . .lbf in (N m) UNIT V /ns W/°C V W A ºC -55 to 175 -55 to 175 VALUE 10 (1.1) ±20 240 1.0 300 7.0 150 TEST CONDITIONS V =10V , T =25°C GS C V =10V , T =100°C GS C T =25°C to 150°CJ 1.6mm from case T =25°C C R =20KΩGS ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)C Maximum soldering temperature, for 10 seconds Note: 1.Repetitive rating: pulse width limited by junction temperature. 2.I ≤ 50A, di/dt ≤ 300A/us, V ≤ V , starting T =25°C.SD DD (BR)DSS J Mounting torque, #6-32 or M3 screw Peak diode recovery dv/dt(Note 2) Operation junction temperature PARAMETER Pulsed Drain current(Note 1) Derating factor above 25°C Continous Drain Current Total power dissipation Gate to Source voltage Drain to Source voltag Storage temperature Drain to Gate voltage SYMBOL VDGR VDSS dv/dt VGS IDM TSTG TJ TL PD ID D (Drain) G (Gate) S (Source) VC Electro-static Discharge capacitor voltage, all pins Human body model (100 pF, 1.5KΩ) 2 KV Page 1 of 8www.nellsemi.com

UNITMin. 0.50 1.05 62.5 THERMAL RESISTANCE PARAMETER Thermal resistance, junction to ambient Thermal resistance, junction to case SYMBOL Rth(j-c) Rth(j-a) Rth(c-s) Thermal resistance, case to heatsink Typ. Max. ºC/W UNIT V ns μA pF nC Max. 250 -100 100 0.07 1500 170 370 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)C TEST CONDITIONS I = 250µA, referenced to 25°CD V =10V, I =25A (Note 1) GS D V =60V, V =0V DS GS T = 25°C C Fall time Gate to source reverse leakage current Input capacitance Total gate charge Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Gate threshold voltage Reverse transfer capacitance Static drain to source on-state resistance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲V /(BR)DSS TJ V(BR)DSS RDS(ON) IGSS QG tr VGS(TH) tf QGS Gate to source charge Gate to drain charge (Miller charge) 10V = 44V, V = 10VDS GS I = 50A D Drain to source leakage currentIDSS COSS CRSS td(ON) td(OFF) QGD V/ºC mΩ V nA T =150°C C Typ.Min. 2000 470 250 125 V = 30V, I = 25A, R =10Ω DD D G V =10V (Note 1)GS V = 25V, V = 0V, f =1MHzDS GS V = 20V, V = 0VGS DS V = -20V, V = 0VGS DS V =0V, I =250μA GS D V =V , I =1000μA GS DS D gfs Forward transconductance V =25V, I =25A DS D 6 30 LD LS Internal drain inductance Internal source inductance Between lead, 6mm form package and center of die nH 4.5 7.5 mJWDSS Drain to source non-repetitivw unclamped inductive turn-off energy I = 50A, V ≤25V,D DD V =10V, R =50Ω GS GD Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2% SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)C SYMBOL I (I )S SD tON VSD ISM trr Qrr Reverse recovery time Pulsed source current Continuous source to drain current Diode forward voltage Reverse recovery charge Forward turn-on time PARAMETER Intrinsic turn-on time is negligible (turn-on is domonated by L +L )S D I = 50A, V = 0VSD GS Integral reverse P-N junction diode in the MOSFET I = 50A, V = -10V, SD GS V =30V, dI /dt = -100A/µs R F TEST CONDITIONS Min. Typ. 0.1 Max. 240 1.35 UNIT V µC A ns D (Drain) G (Gate) S (Source) I = 25A, V = 0VSD GS 0.95 1.0 1.20 Page 2 of 8www.nellsemi.com

ORDERING INFORMATION SCHEME MOSFET series Current rating, ID Voltage rating, VDS 65 = 65A 06 = 60V

65 N 06 A

A = TO-220AB H = TO-263(D²-PAK) N = N-Channel ■ TEST CIRCUITS AND WAVEFORMS Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms D.U.T. + VDS RG VGS VDD Same Type as D.U.T. Driver dv/dt controlled by R* G l controlled by pulse period* SD D.U.T.-Device under test* L Period P.W. VGS (Driver) P.W. Period VDD lSD (D.U.T) (D.U.T) VDS Body Diode Forward Voltage Drop Body Diode Recovery dv/dt Body Diode Reverse Current lRM di/dt l , Body Diode forward currentFM V =10VGS (D.U.T) Page 3 of 8www.nellsemi.com

Fig.2A Switching test circuit 10V D.U.T. RL VDS VGS RG VDD Pulse Width ≤ 1µs Duty Factor ≤ 0.1% Fig.2B Switching Waveforms VDS VGS 90% 10% td(ON) tR td(OFF) tF Fig.3A Gate charge test circuit Fig.3B Gate charge waveform Same Type as D.U.T. VDS D.U.T. 1mA VGS 0.3µF 50kΩ 0.2µF 12V QG QGS QGD 10V VG Charge ■ TEST CIRCUITS AND WAVEFORMS(Cont.) Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms L VDS RG 10V tp VDD D.U.T. VDD tp Time lAS BVDSS lD(t) VDS(t) Page 4 of 8www.nellsemi.com

■ TYPICAL CHARACTERISTICS Fig.1 Normalised power dissipation P % D R (°C/W)th(j-c), Fig.2 Transient thermal impedance 200 40 0.001 0.1 -710 100 110 120 60 80 100 120 140 160 180 0.01 0 0.02 0.05 0.2 0.1 0.5 T t TD= tptpPD -510 -310 -110 10 Tc/°C P % = 100 P / P D D D25°C Time(s) Fig.4 Typical output characteristics, T =25°Cj l (A)D V (V)Ds Fig.3 Normalised continuous drain current 100 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 100 110 120 Fig.5 Safe operating area. T =25°C mb Fig.6 Typical on-state resistance, T =25°C j R (mΩ)DS(ON) 1000 100 1 10 100 551510 5020 25 30 35 40 45 I (A)D I % D 6.5 5.5 4.5 V (V)= GS V ≥5VGS I % = 100 I / ID D D25°C Tc/°C V (V)SD 7.5 100 ms 10 ms 1 ms 10us 100us 1us tp= DC 60 65 7570 80 85 90 95 100 R =V /I DS(ON) DS D 6.5 V (V)= GS I (A) D Page 5 of 8www.nellsemi.com

T =175°CJ 25°C Fig.7 Typical transfer characteristics Fig.8 Gate threshold voltage V (V)GS I (A) D min typ max T (°C)J V (V)GS(th) -50-100 0 50 100 150 200 10 2 3 4 5 6 87 9 10 100 Fig.9 Typical transconductance,T =25°CJ Fig.10 Sub-threshold drain current Fig.11 Normalized drain-source on-state resistance Fig.12 Typical capacitances,C , C , Ciss oss rss g (S)fs I (A) D R /RDS(ON) DS(ON) 25°C Capacitances, (1000 pF) 0 20 40 60 80 100 -610 10 2 3 4 1.5 2.5 0.5 -50 50 150-100 2.5 1.5 0.5 0.01 0.1 1 10 100 V (V)GS T (°C)C V (V)DS V =25VDS -510 -410 -310 -210 -110 2% typ 98% I (A)D 1000 200 I =25AD V =5VGS V =0VGS F=1 MHZCISS COSS CRSS Page 6 of 8www.nellsemi.com

Fig.13 Typical turn-on gate-charge characteristics V (V)GS 30 40100 20 Q (nC) G Nell High Power Products V =14VDS V =44VDS I =75AD 20 40 60 80 100 120 140 160 180 100 110 120 T (°C) C W (%)DSS Fig.14 Normalised avalanche energy rating I =50AD Fig.15 Typical diode forward voltage I (A)S 0 0.2 0.4 0.6 0.8 1 100 V (V)SD T =175°CJ 25°C 1.2 1.4 VDS L D.U.T. R 01 shunt -I /100D VDD RGS VGS W =0.5·L·(I )²·V /(V -V )DSS D (BR)DSS (BR)DSS DD Fig.16 Avalanche energy test circuit V =0GS Page 7 of 8www.nellsemi.com

2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB 2TO-263(D PAK) 2.79 (0.110) 0.36 (0.014) 2.79 (0.110) 2.29 (0.090) 1.40 (0.055) 1.19 (0.047) 0 to 0.254 (0 to 0.01) 1.40 (0.055) 1.14 (0.045) 4.83 (0.190) 4.06 (0.160) 10.45 (0.411) 9.65 (0.380) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 15.00 (0.591) 0.940 (0.037) 0.686 (0.027) 2.67 (0.105) 2.41 (0.095) 5.20 (0.205) 4.95 (0.195) 15.85 (0.624) 3.56 (0.140) 0.53 (0.021) D (Drain) G (Gate) S (Source) Page 8 of 8www.nellsemi.com