65N06_18 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor 65N06
FEATURES
- DrainCurrent–ID=63A@TC=25℃
- DrainSource Voltage- :VDSS=60V(Min)
- StaticDrain-Source On-Resistance :RDS(on) =0.018Ω(Max)
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
DESCRIPTION
- Designedforlowvoltage, highspeed switchingapplications in powersupplies,converters andpower motorcontrols. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 60 V VGS Gate-SourceVoltage-Continuous ±20 V ID DrainCurrent-Continuous 63 A IDM DrainCurrent-SinglePlused 240 A PD TotalDissipation@TC=25℃ 150 W TJ Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.05 ℃/W Rthj-a ThermalResistance,JunctiontoAmbient 62.5 ℃/W
isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor 65N06 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0;ID=0.25mA 60 V VGS(th) GateThresholdVoltage VDS=VGS; ID=1mA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=25A 0.018 Ω IGSS Gate-BodyLeakageCurrent VGS= ±20V;VDS=0 ±100 nA IDSS ZeroGateVoltageDrainCurrent VDS=60V;VGS=0 5 μA VSD ForwardOn-Voltage IS=25A;VGS=0 1.2 V