6410A KIA
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15A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 6410AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareusingtrenchDMOS technology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance, providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheand commutationmode.Thesedevicesarewellsuitedforhighefficiencyfastswitchingapplications. 2.Features n RDS(ON)=72m Ω@VGS=10V n Improveddv/dtcapability n Fastswitching n 100%EASguaranteed n Greendeviceavailable 3. Applications n Networking n Loadswitch n Ledapplications 4.Symbol 1of5 Rev1.0JAN2015 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
15A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 6410AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDSS 100 V Gate-sourcevoltage VGSS ±20 V Operatingjunctiontemperaturerange TJ -50to150 ºC Storagetemperaturerange TSTG -50to150 ºC Continuousdraincurrent TC=25ºC ID 15 A TC=100ºC 9.5 A Pulseddraincurrent 1 IDM 60 A Maximumpowerdissipation TC=25 ºC PD 50 W Derateabove25 ºC 0.4 W/ ºC 6. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-ambient RθJA 62 ºC/W Thermalresistance,Junction-case RθJC 2.5 ºC/W 2of5 Rev1.0JAN2015
15A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 6410AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250uA 100 - - V BVDSS temperaturecoefficient △BVDSS/△TJ Referenceto25 °C, ID=1mA - 0.05 - V/°C Zerogatevoltagedraincurrent IDSS VDS=100V,V GS=0V TJ=25°C - - 1 μA VDS=80V,V GS=0V TJ=125°C - - 10 Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 1.2 1.6 2.5 V VGS(th) temperaturecoefficient △VGS(th) - -5 - mV/°C Forwardtransconductance gfs VDS=10V,ID=3A - 8.7 - S Gateleakagecurrent IGSS VGS=+20V,V DS=0V - - +100 nA Drain-sourceon-stateresistance RDS(on) VGS=10V,IDS=5A - 72 90 mΩ Gateresistance Rg VDS=0V,V GS=0V,f=1MHz - 1.3 2.6 Ω Diodeforwardvoltage VSD ISD=1A,V GS=0V,T J=25°C - - 1 V Reverserecoverytime 2 trr IS=1A,V GS=30V dlSD/dt=100A/μs,T J=25°C - - - nS Reverserecoverycharge 2 Qrr - - - nC Inputcapacitance Ciss VDS=50V,VGS=0V, f=1MHz - 1480 2150 pFOutputcapacitance Coss - 480 700 Reversetransfercapacitance Crss - 35 55 Turn-ondelaytime 2.3 td(on) VDD=30V,ID=1A, RG=3.3Ω,VGS=10V - 2.9 6 ns Risetime 2.3 tr - 9.5 18 Turn-offdelaytime 2.3 td(off) - 18.4 35 Falltime 2.3 tf - 5.3 10 Totalgatecharge 2.3 Qg VDS=48V,VGS=10V ID=5A - 9.3 13 nCGate-sourcecharge 2.3 Qgs - 2.1 4.2 Gate-draincharge 2.3 Qgd - 1.8 4 Continuoussourcecurrent IS VG=VD=0V,forcecurrent - - 15 A Pulsedsourcecurrent ISM - - 60 A Note:1.Repetitiverating,pulsewidthlimitedbymaximumjunctiontemperature 2.Thedatatestedbypulse,pulsewidth< 300usdutycycle< 2%. 3.Essentiallyindependentofoperatingtemperature. 3of5 Rev1.0JAN2015
15A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 6410AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8.Testcircuitsandwaveforms 4of5 Rev1.0JAN2015
15A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 6410AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.0JAN2015