6110A KIA

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12A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 6110AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features TheKIA6110isthehighestperformancetrenchN-chMOSFETSwithextremehighcelldensity, whichprovideexcellentRDSONandgatechargeformostofthesynchronousbuckconverterapplications. TheKIA6110meettheRoHSandgreenproductrequirement,100%EASguaranteedwithfullfunction reliabilityapproved. 2.Features n RDS(ON)=90mΩ@VGS=10V n Advancedhighcelldensitytrenchtechnology n Superlowgatecharge n ExcellentCdv/dteffectdesline n Greendeviceavailable 3.Applications n High frequency point-of-load synchronous buck converter n Networking DC-DC power system n Load switch 4.Symbol 1of5 Rev1.1JAN2014 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

12A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 6110AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings Parameter Symbol Rating Units Drain-sourcevoltage VDSS 100 V Gate-sourcevoltage VGS +20 V Continuousdraincurrent,V GS@10V 1 TC=25°C ID A TC=100°C 7.7 TA=25°C 3 TA=100°C 2.4 Pulseddraincurrent 2 IDM 24 Powerdissipation 3 TC=25°C PD

34.7 WTA=25°C 2

Singlepulseavalancheengergy 3 EAS 7.3 mJ Avalanchecurrent IAS 11 A Operatingjunctionandstoragetemperaturerange TJ ,TSTG -55to150 ºC 5. Thermalcharacteristics Parameter Symbol Typ Max Unit Thermalresistancejunction-case RθJC - 3.6 ºC/W Thermalresistancejunction-ambient RθJA - 62 2of5 Rev1.1JAN2014

12A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 6110AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 100 - - V BVDSS temperaturecoefficient △BVDSS/△TJ Reference25 ℃ ID=1mA - 0.098 - V/ºC Drain-sourceon-resistance 2 RDS(on) VGS=10V,ID=8A - 90 110 mΩVGS=4.5V,ID=6A - 95 120 Gatethresholdvoltage VGS(TH) VDS=V GS,ID=250uA 1.0 1.5 2.5 V VGS(TH) temperaturecoefficient △VGS(TH) - -4.57 - mV/ºC Drain-sourceleakagecurrent IDSS VDS=80V,V GS=0V TJ=25°C - - 1 μAVDS=80V,V GS=0V TJ=55°C - - 5 Gate-sourceforwardleakage IGSS VGS=+20V,V DS=0V - - +100 nA Forwardtransconductance gfs VDS=5V,I D=10A - 13 - S Gateresistance Rg VDS=0V,V GS=0V f=1MHz 1.2 1.8 2.5 Ω Totalgatecharge(10V) Qg VDS=80V,I D=10A VGS=10V - 26.2 36.7 nCGate-sourcecharge Qgs - 4.6 6.44 Gate-draincharge Qgd - 5.1 7.1 Turn-ondelaytime td(on) VDD=50V,I D=10A, RG=3.3Ω,VGS=10V - 4.2 8.4 nsRisetime tr - 8.2 15 Turn-offdelaytime td(off) - 35.6 71 Falltime tf - 9.6 19.2 Inputcapacitance Ciss VDS=15V,VGS=0V f=1MHz - 1535 2149 pFOutputcapacitance Coss - 60 84 Reversetransfercapacitance Crss - 37 52 Singlepulseavalancheenergy 5 EAS VDD=25V,IAS=5A L=0.1mH 1.5 - - mJ Continuoussourcecurrent 1,6 IS VD=VG=0V, Forcecurrent - - 12 AMaximumpulsedcurrent 2,6 ISM - - 24 Diodeforwardvoltage 2 VSD IS=1A,V GS=0V TJ=25°C - - 1.2 V Reverserecoverytime trr IF=10A,dI/dt=100A/μs TJ=25°C - 37 - ns Reverserecoverycharge Qrr - 27.3 - nC Note: 1. Thedatatestedbysurfacemountedona1inch 2 boardwith2OZcopper. 2. Thedatatestedbypulsed,pulsewidth< 300μs,dutycycle< 2%. 3. TheEASdatashowsmax.rating.ThetestconditionisV DD=25V,VGS=10V,L=0.1Mh,I AS=11A 4. Thepowerdissipationislimitedby150 ºCjunctiontemperature. 5. Themin.valueis100%EAStestedguarantee. 6. ThedataistheoreticallythesameasI D andI DM,inrealapplications,shouldbelimitedbytotal powerdissipation. 3of5 Rev1.1JAN2014

12A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 6110AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Typicaloperatingcharacteristics 4of5 Rev1.1JAN2014

12A，100V N-CHANNELMOSFETKIA SEMICONDUCTORS 6110AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1JAN2014