60TB30 KIA
Document overview
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Technical content
60A，300VKIA SEMICONDUCTORS 60TB30 1.Description FREDfromKIAutilizesadvancedprocessingtechniquestoachieveultrafastrecovery timesandhigherforwardcurrent.Itssoftrecoverycharacteristicsandhighreliabilitysuitforwideindustrial applications. 2.Features n Ultrafastrecoverytime n Lowforwardvoltage n Lowleakagecurrent n Lowrecoveryvoltage n Softrecoverycharacteristics n Highsurgecurrentcapability 3. Pinconfiguration 1of3 Rev1.0OCT2014 Pin(TO-3P) Function
1 Anode
2 Cathode
3 Anode
60A，300VKIA SEMICONDUCTORS 60TB30 4. Maximumratings Parameter Symbol Rating Units Peakrepetitivereversevoltage DCblockingvoltage VRRM VR 300 V Averageforwardcurrent TC =110 °C,Perdiode IF(AV)
30 ATC =110 °C,Perpackage 60
RMSforwardcurrentPerdiode,T C =110 °C IF 42 A Non-repetitive surgeforwardcurrent TJ=45°C,t=10ms,50Hz,sine IFSM 480 A Powerdissipation PD 156 W Operatingjunctiontemperatureandstorage temperaturerange TJ,Tstg -55to+150 ºC 5. Thermalcharacteristics Parameter Symbol Rating Unit Maximumthermalresistance,junction −to−case RθJC 0.8 ºC/W 6. Electricalcharacteristics Parameter Symbol Conditions Rating Unit Min Typ Max MaximumInstantaneousForwardVoltage VF IF=30A - 1.25 1.8 VIF=30A,T J=125°C - 1.12 - MaximumInstantaneousReverseCurrent IR VR=300V - - 10 μA VR=300VT J=125°C - - 10 mA ReverseRecoveryTime trr IF=1A,V R=30V, diF/dt=-200A/μs - 22 - ns ReverseRecoveryTime trr VR=150V,I F=30A, diF/dt=-200A/μs, TJ=25°C - 35 - ns MaxReverseRecoveryCurrent IRRM - 2.5 - A ReverseRecoveryTime trr VR=150V,I F=30A, diF/dt=-200A/μs TJ=125°C - 70 - ns MaxReverseRecoveryCurrent IRRM - 6.8 - A 2of3 Rev1.0OCT2014
60A，300VKIA SEMICONDUCTORS 60TB30 3of3 Rev1.0OCT2014