60R380DS KIA
Document overview
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Technical content
1.Description This Power MOSFET is produced using KIA advanced Super-Junction technology.This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. 2.Features RDS(on)=0.34Ω@VGS = 10 V Low gate charge ( typical 33 nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability 3. Pin configuration 1o f8 R e v1 . 0O C T2 0 1 5 Pin Function 1G a t e 2D r a i n 3S o u r c e KIA SEMICONDUCTORS 60R380DSKIA SEMICONDUCTORS KIA SEMICONDUCTORS
- Absolute maximum ratings (TC= 25 ºC , unless otherwise noted) Parameter Symbol Ratings Units Drain-source voltage V DSS 600 V Drain current TC=25°C ID 11* A TC=100°C 6.7* A Drain current (note1) I DM 30* A Gate-source Voltage V GSS ±3 0 V Single pulsed avalanche energy (note2) E AS 132 mJ Avalanche current (note1) I AR 2.1 A Repetitive avalanche energy (note1) E AR 65 mJ Peak diode recovery dv/dt (note 3) dv/dt 5.0 V/ns Power dissipation TC=25°C PD 125 W Derate above 25°C 1.0 W/°C Operating and storage temperature range T J,T STG - 5 5t o+ 1 5 0 ° C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds TL 300 °C * Drain current limited by maximum junction temperature. 5. Thermal characteristics Parameter Symbol 60R380DS Units Thermal resistance, junction-to-case R θJC 0.6 °C/W Thermal resistance, case-to-sink Typ. R θCS 1.0 °C/W Thermal resistance, junction-to-ambient R θJA 62 °C/W 2o f8 R e v1 . 0O C T2 0 1 5 KIA SEMICONDUCTORS KIA SEMICONDUCTORS KIA SEMICONDUCTORS 60R380DS
- Electrical characteristics (TC=25°C,unless otherwise notes) Note：1. Repetitive rating : pulse width limited by maximum junction temperature 2. IAS =2 . 1 A ,VDD =5 0 V ,RG =2 5Ω,S t a r t i n gTJ =2 5 ° C 3. ISD≤10A, di/dt≤200A/μs, VDD≤BVDSS,S t a r t i n gTJ=25°C 4. Pulse test : pulse width≤300μs, duty cycle≤2% 5. Essentially independent of operating temperature 3o f8 R e v1 . 0O C T2 0 1 5 Parameter Symbol Test Conditions Min Typ Max Units Off characteristics Drain-source breakdown voltage BV DSS VGS=0V,ID=250μA6 0 0 - - V Zero gate voltage drain current I DSS VDS=600V,VGS=0V - - 1 μA VDS=480V,TC=125°C - - 10 μA Gate-body leakage current Forward IGSS VGS=30V,VDS=0V - - 100 nA Reverse V GS=-30V,VDS=0V - - -100 nA Breakdown voltage temperature coefficient △BVDSS/△TJ ID=250μA Referenced to 25°C -0 . 6- V / ° C On characteristics Gate threshold voltage V GS(th) VDS=VGS,I D=250μA 2.5 - 4.5 V Static drain-source on-resistance R DS(on) VGS=10V,ID=5.5A - 0.34 0.38 Ω Forward transconductance g FS VDS=40V,ID=5.5A (note4) -1 6- S Dynamic characteristics Input capacitance C ISS VDS=25V,VGS=0V, f=1.0MHZ - 680 - pF Output capacitance C OSS - 140 - pF Reverse transfer capacitance C RSS -5- p F Switching characteristics Turn-on delay time t D(ON) VDD=400V,ID=5.5A, RG=20Ω (note4, 5) -2 6-n s Rise time t R -6 0-n s Turn-off delay time t D(OFF) -7 5-n s Fall time t F -4 4-n s Total gate charge Q G VDS=480V, ID=11A, VGS=10V (note4, 5) -3 3-n C Gate-source charge Q GS -4- n C Gate-drain charge Q GD -4 . 2- n C Drain-source diode characteristics and maximum ratings Maximum continuous drain-source diode forward current IS -- 1 1 A Maximum pulsed drain-source diode forward current ISM -- 3 0 A Drain-source diode forward voltage V SD VGS=0V,IS=11A - - 1.5 V Reverse recovery time t RR VGS=0V,IS=11A, dIF/dt=100A/μs (note 4) - 270 - ns Reverse recovery charge Q RR -3 . 3- μC KIA SEMICONDUCTORS KIA SEMICONDUCTORS KIA SEMICONDUCTORS 60R380DS
7.Test circuits and waveforms 4o f8 R e v1 . 0O C T2 0 1 5 KIA SEMICONDUCTORS KIA SEMICONDUCTORS KIA SEMICONDUCTORS 60R380DS
5o f8 R e v1 . 0O C T2 0 1 5 KIA SEMICONDUCTORS KIA SEMICONDUCTORS KIA SEMICONDUCTORS 60R380DS
6o f8 R e v1 . 0O C T2 0 1 5 KIA SEMICONDUCTORS KIA SEMICONDUCTORS KIA SEMICONDUCTORS 60R380DS
7o f8 R e v1 . 0O C T2 0 1 5 KIA SEMICONDUCTORS KIA SEMICONDUCTORS KIA SEMICONDUCTORS 60R380DS
8o f8 R e v1 . 0O C T2 0 1 5 KIA SEMICONDUCTORS KIA SEMICONDUCTORS 60R380DS