60R070 KIA
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Technical content
47A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 60R070KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description ThisPowerMOSFETisproducedusingKIAsemi\`sadvancedsuper-junctiontechnology.This advancedtechnologyhasbeenespeciallytailoredtominimizeconductionloss,providesuperiorswitching performance,andwithstandhighenergypulseintheavalancheandcommutationmode.Thesedevices arewellsuitedforAC/DCpowerconversioninswitchingmodeoperationforhigherefficiency. 2.Features n RDS(ON)=60mΩ@VGS=10V n Lowgatecharge(typical170nC) n Highruggedness n Fastswitching n 100%avalanchetested n Improveddv/dtcapability 3. Pinconfiguration 1of7 Rev1.0JUL.2016 Pin Function
1 Gate
2 Drain
3 Source
47A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 60R070KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Ratings Units Drain-sourcevoltage VDSS 600 V Gate-sourcevoltage VGSS ±30 V Draincurrenetcontinuous Tc=25°C ID 47 A Tc=100°C 29 A Draincurrentpulsed(note1) IDM 140 A Avalancheenergy Repetitive(note1) EAR 1.72 mJ Singlepulse(note2) EAS 1135 mJ Avalanchecyrrent (note1) IAR 9.3 A Peakdioderecoverydv/dt(note3) dv/dt 50 V/ns Totalpowerdissipation Tc=25°C PD 391 W Derateabove25 °C 3.13 W/°C Operatingandstoragetemperaturerange TJ，TSTG -55~+150 °C Maximumleadtemperatureforsolderingpurposes, 1/8”fromcasefor5seconds TL 300 °C *Draincurrentlimitedbymaximumjunctiontemperature 5. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-ambient RthJA 62 ºC/W Thermalresistance,case-to-sinktyp. RthJS 0.5 ºC/W Thermalresistance,Junction-case RthJC 0.32 ºC/W 2of7 Rev1.0JUL.2016
47A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 60R070KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenoted) Note：1.Repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.L=25mH,I AS=9.3A,V DD=50V,R G=25Ω,startingT J=25°C 3.I SD≤ID,di/dt ≤200A/μs,V DD≤BVDSS,startingT J=25°C 4.Pulsetest:pulsewidth ≤300μs,dutycycle ≤2% 5.Essentiallyindependentofoperatingtemperature 3of7 Rev1.0JUL.2016 Parameter Symbol TestConditions Min Typ Max Units Offcharacteristics Drain-source breakdownvoltage TJ=25℃ BVDSS VGS=0V,ID=250μA, 600 - - V TJ=150℃ - 650 - V Drain-sourceleakagecurrent IDSS VDS=600V,VGS=0V - - 1 μA VDS=480V,TC=125℃ - 10 - μA Gate-bodyleakage current Forward IGSS VGS=30V,VDS=0V - - 100 nA Reverse VGS=-30V,VDS=0V - - -100 nA Breakdownvoltagetemperature coefficient △BVDSS/△TJ ID=250μA, referencedto25 ℃ - 0.6 - V/°C Oncharacteristics Gatethresholdvoltage VGS(TH) VDS=VGS,I D=250μA 2.5 3.5 4.5 V Staticdrain-sourceon-resistance RDS(ON) VGS=10V,ID=23.5A - 60 70 mΩ Dynamiccharacteristics Inputcapacitance CISS VDS=25V,VGS=0V, f=1MHZ - 3100 - pF Outputcapacitance COSS - 750 - pF Reversetransfercapacitance CRSS - 10 - pF Switchingcharacteristics Turn-ondelaytime tD(ON) VDD=480V,ID=23.5A, RG=20Ω - 16 - ns Risetime tR - 12 - ns Turn-offdelaytime tD(OFF) - 83 - ns Falltime tF - 5 - ns Totalgatecharge QG VDS=480V,I D=23.5A, VGS=10V - 170 - nC Gate-sourcecharge QGS - 21 - nC Gate-draincharge QGD - 87 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,ISD=23.50A - - 1.5 V Continuousdrain-sourcecurrent IS - - 47 A Pulseddrain-sourcecurrent ISM - - 140 A Reverserecoverytime tRR VGS=0V,IS=23.5A, dlF/dt=100A/μs - 720 - ns Reverserecoverycharge QRR - 19 - μC
47A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 60R070KIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Typicalcharacteristics 4of7 Rev1.0JUL.2016
47A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 60R070KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of7 Rev1.0JUL.2016
47A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 60R070KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of7 Rev1.0JUL.2016
47A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 60R070KIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of7 Rev1.0JUL.2016